Difference in properties of amorphous Ge42S58 between bulk and film forms

Significantly different characteristics have been observed between Ge₄₂S₅₈ films prepared by thermal evaporation and bulk Ge₄₂S₅₈ glasses prepared by melt-quench. The film exhibits a higher electrical conductivity by about four orders of magnitude and contains a higher density of paramagnetic defect compared with the bulk. A large increase of the electrical conductivity is attained by doping with a small amount of Ag into the bulk, but the doping effect is hardly observed in the film. These differences are considered to result from larger topological disorder and larger defect density in the film network compared with the bulk network.     

Structure and bonding in the mixed chalcogenide system As2SxSe3−x

⁷⁵As Nuclear Quadrupole Resonance (NQR) lineshape measurements for the amorphous mixed chalcogenide system As₂S_xSe_3?x are reported. The line-shapes are asymmetric and approximately 8 MHz in width (full width at half maximum). The peak resonance frequency is observed to increase approximately linearly with x. The NQR results indicate the presence of mixed As₂(S, Se)₃ pyramidal structural units and are thus not consistent with models that predict the occurrence of anion subsite segregation. NQR measurements performed on crystalline As₂SSe₂ lend support to the structural model proposed for the glasses.     

Effect of hydrostatic pressure on the elastic moduli of As2S3 and As2Se3 glasses at 195 and 296 K

Velocities of 30 MHz longitudinal and shear ultrasonic waves have been measured in As₂S₃ and As₂Se₃ glasses as a function of hydrostatic pressure up to 1.5 kbar at 195 K and 3 kbar at 296 K. The elastic stiffness moduli are found to have relatively large, positive, pressure dependences which are about the same at both temperatures for both glasses. This behavior is attributed to the weakness of bonding between layers comprised of AsS₃ and AsS₃ pyramids.Inspection of data for a variety of glasses reveals a correlation between the value of C_L/3C_T and whether the elastic moduli are increased or decreased by pressure. (C_L is the longitudinal modulus and C_T the shear modulus.)Using the pressure dependences of the elastic moduli obtained in the present work, it is found that volume change is responsible for most of the temperature dependences of the moduli. In addition elastic gammas are obtained which are consistent with thermal Grüneisen gammas at 12 K. The pressure dependence of the volume of As₂S₃ glass at 296 K is calculated using the present results in the Murnagham equation. Agreement with volumetric data of Weir is obtained.     

Medium range order and optical properties of As2S3 glass

Low frequency Raman scattering and optical absorption edge were measured for As₂S₃ glasses quenched at temperature in the supercooling region of the glasses. It was found that both the Raman spectrum and the optical absorption edge shift to the lower energy side with the rise of the quenching temperature. The effects were interpreted in terms of the order of the arrangements of the layer-like clusters, which become more random as the quenching temperature goes higher.     

Ionic conductivity of Li2O-BaO-Bi2O3 glasses

Dc and ac conductivities of Li₂O-BaO-Bi₂O₃ glasses have been studied in a temperature range of 263-523 K and a frequency range of 10 Hz-2 MHz and have been compared with those of binary Li₂O-Bi₂O₃ glasses. The frequency dependent conductivity has been studied employing both the modulus and conductivity formalisms. We have observed small changes in the dc conductivity and its activation energy from those of the binary glass when content of BaO is small. However we have observed noticeable changes in the conductivity and the activation energy when BaO content is large. The significant changes in the values of the non-exponential parameter and the power-law exponent of the ac electrical properties have been observed due to introduction of BaO in the lithium bismuthate glasses. The existing relation between the power-law exponent and the non-exponential parameter was also violated in the present glass compositions.     

The comparative structure, properties, and ionic conductivity of LiI + Li2S + GeS2 glasses doped with Ga2S3 and La2S3

The well known and characterized fast ion conducting (FIC) LiI + Li₂S + GeS₂ glass-forming system has been further optimized for higher ionic conductivity and improved thermal and chemical stability required for next generation solid electrolyte applications by doping with Ga₂S₃ and La₂S₃. These trivalent dopants are expected to eliminate terminal and non-bridging sulfur (NBS) anions thereby increasing the network connectivity while at the same time increasing the Li⁺ ion conductivity by creating lower basicity [(Ga or La)S_4/2]⁻ anion sites. Consistent with the finding that the glass-forming range for the Ga₂S₃ doped compositions is larger than that for the La₂S₃ compositions, the addition of Ga₂S₃ is found to eliminate NBS units to create bridging sulfur (BS) units that not only gives an improvement to the thermal stability, but also maintains and in some cases increases the ionic conductivity. The compositions with the highest Ga₂S₃ content showed the highest T_gs of ∼325 °C. The addition of La₂S₃ to the base glasses, by comparison, is found to create NBS by forming high coordination octahedral LaS₆³⁻ sites, but yet still improved the chemical stability of the glass in dry air and retained its high ionic conductivity and thermal stability. Significantly, at comparable concentrations of Li₂S and Ga₂S₃ or La₂S₃, the La₂S₃-doped glasses showed the higher conductivities. The addition of the LiI to the glass compositions not only improved the glass-forming ability of the compositions, but also increased the ionic conductivity glasses. LiI concentrations from 0 to 40 mol% improved the conductivities of the Ga₂S₃ glasses from ∼10⁻⁵ to ∼10⁻³ (Ω cm)⁻¹ and of the La₂S₃ glasses from ∼10⁻⁴ to ∼10⁻³ (Ω cm)⁻¹ at room temperature. A maximum conductivity of ∼10⁻³ (Ω cm)⁻¹ at room temperature was observed for all of the glasses and this value is comparable to some of the best Li ion conductors in a sulfide glass system. Yet these new compositions are markedly more thermally and chemically stable than most Li⁺ ion conducting sulfide glasses. LiI additions decreased the T_gs and T_cs of the glasses, but increased the stability towards crystallization (T_c − T_g).     

DC conduvtivity of V2O5TeO2 glasses

The dc conductivity of semiconducting vanadium tellurite glasses of compositions in the range 50 to 80 mol% V₂O₅ has been measured in the temperature region 77 to 400 K. Measurements have been made on annealed samples at different annealing temperatures. Annealing the samples at temperature of about 250°C causes the appearance of a complex crystalline phase resulting in an increase of conductivity. Results are reported for amorphous samples of different compositions. The conductivity of tellurite glasses is slightly higher than the corresponding composition of phosphate glasses, but the general trend of the increase of conductivity and decrease of high temperature activation energy with increasing V₂O₅ content is similar in the two systems. The data have been analysed in the light of existing models of polaronic hopping conduction. A definite conclusion about the mechanics of conduction (adiabatic or nonadiabatic) is difficult in the absence of a precise knowledge of the characteristic phonon frequency v₀. Adiabatic hopping is indicated for v₀～10¹¹ Hz, however this value leads to unreasonably low value for the Debye temperature θ_D, and higher values for v₀～10¹³ hz satifiies the conditions for nonadiabatic hopping which appears to be the likely mechanism of conduction in V₂O₅TeO₂ glasses. The low temperature data (< 100 K) can be fitted to Mott's variable range hopping, which when combined with ac conductivity data gives reasonable values of α, but a high value for the disorder energy.     

Bulk and impurity infrared absorption in 0.5 As2Se30.5 GeSe2 glass

A study of infrared absorption in the 250–4000 cm^?1 region has been carried out for 0.5 As₂Se₃0.5 GeSe₂ glasses quantitatively doped with oxide impurity. The frequencies of the intrinsic 2- and 3-phonon absorption bands at 490 and 690 cm^?1 correspond well to those predicted from combinations of the high frequency bands in the first order IR and Raman spectra of As₂Se₃ and GeSe₂ glasses.Glasses doped with As₂O₃ exhibit the same oxide impurity absorptionbands as those doped with GeO₂. Unlike As₂Se₃ glass, at impurity concentrations up to 1000 ppm As₂O₃, 0.5 As₂Se₃0.5 GeSe₂ glass exhibits only one major oxide impurity species, characterized by absorption bands at 780 and 1260 cm^?1 and due to oxygen bonded to network Ge. The observation of a much weaker network AsO vibration band at 670 cm^?1 confirms that oxygen bonds preferentially to Ge in this glass. The same minor oxide species appears to determine excess IR absorption at the CO₂ laser wavelength of 10.6 μm in both As₂Se₃ and 0.5 As₂Se₃ 0.5 GeSe₂ glasses. The frequencies and intensities of absorption bands due to hydrogen impurities are also quite comparable for these two materials.     

A model for photostructural changes in the amorphous AsS system

The photodarkening effect was studied in thin film, bulk glasses and powdered glasses of composition As₂₉S₇₁, As₄₀S₆₀ and As_42.5S_57.5. The amount of photodarkening produced in a sample depended strongly on the samples state and composition as well as temperature, incident light intensity and wavelength. Using Raman spectroscopy, vibrational bands at 231 and 491 cm^?1 (assigned to AsAs and SS bond vibrations) were found to be enhanced in photodarkened samples. We present a model in which photodarkening is due to the formation of As_n clusters (n ? 2) which are loosely coupled to the amorphous network.     

Plasma etching of As2S3 films for optical waveguides

Chalcogenide glasses are good candidate materials for ultra-fast non-linear optic devices. In this work, we present the photolithographic process and the plasma etching of arsenic tri-sulphide (As₂S₃) film. The films were deposited on thermally oxidized silicon substrates by ultra-fast pulsed laser deposition. To protect As₂S₃ film from photo-resist developer, thin resist layer ∼100-200 nm was remained on the UV exposed area by controlling resist development time. After removing the protective layer in oxygen plasma, As₂S₃ waveguides were patterned in inductively coupled plasma reactive ion etching (ICP-RIE) system using CF₄-O₂ gas mixture. We investigated the etch rate and the etch selectivity to photo-resist of As₂S₃ as a function of bias power, induction power, operating pressure, and gas flow rate ratio of CF₄ and O₂. The film is mainly etched by the chemical reaction with fluorine radicals. The content of oxygen in the plasma determines the etched sidewall profiles and nearly vertical profile was obtained at high oxygen content plasma.     

Role of nickel ion coordination on spectroscopic and dielectric properties of ZnF2-As2O3-TeO2:NiO glass system

20ZnF₂-30As₂O₃-(50 − x)TeO₂:xNiO (0 ≤ x ≤ 2.0) glasses were synthesized. The glasses were characterized by X-ray diffraction, scanning electron microscopy, EDS and DSC techniques. A variety of properties, i.e. optical absorption, infrared, magnetic susceptibilities and dielectric properties (constant ?′, loss tan δ, a.c. conductivity σ_ac over a wide range of frequency and temperature) of these glasses have been carried out. The analysis of results of all these studies has indicated that the nickel ions occupy both octahedral and tetrahedral positions and the gradual increase of NiO content in the glass matrix causes growing proportions of Ni²⁺ ions that occupy octahedral positions. The luminescence spectra of these glasses have exhibited a broad emission band in region 1200-1450 nm identified due to ³T₂(3F) → ³A₂(3F) octahedral transition of Ni²⁺ ions. The luminescence efficiency and cross section have been found to be the highest for the glass containing highest concentration of NiO. Finally it is concluded that the higher the concentration of octahedrally positioned Ni²⁺ ions, the higher is the luminescence efficiency.     

Optical and electrical properties of Tl-S glasses

The frequency and temperature dependence of ac conductivity and optical absorption have been measured for four Tl-S glasses, TlS, Tl₂S₃,TlS₂ and Tl₂S₅, prepared by a melt-quenching method. The ac conductivity has been measured over a frequency range 0.1 Hz to 1.8 GHz and a temperature range 190-273 K. The optical absorption was measured at room temperature over a wavelength range 200-2600 nm. We have determined the electrical and optical band gaps from the experimental results. For each glass, the electrical band gap is larger than the optical band gap and the difference increases with increasing sulfur concentration. The frequency dependence of ac conductivity varies with composition of the glasses. We suggest that these results are due to an increase of localized states in the band gap with increasing sulfur concentration.     

Thermally stimulated depolarization of glassy As2S3

Decay of dark polarization in glassy As₂S₃ is investigated by thermostimulated depolarization (TSD). An attempt is made to analyse the observed maximum at about 360 K. To get more insight into the TSD phenomena, dc conductivity measurements at corresponding temperature are also presented. It is not possible at present to identify the trapped species responsible for the non-uniform polarization, despite finding that identical traps are active in both surface and bulk trapping.     

Electron diffraction RDF analysis of amorphous As2Se3,AAs2Se2Te,As2SeTe2 and As2Te3 films

The local order in amorphous films of As₂Se₃, As₂Se₂Te, As₂SeTe₂, and As₂Te₃ has been examined by scanning electron diffraction with direct recording of the intensity of the elastically scattered electrons. The radial distribution functions indicate that there is a systematic increase in mean nearest neighbor distance as the Te concentration is increased, butthe mean coordination number increases slightly around 2.4. Pair function calculation of models shows that the 3-aand 2-fold coordinations of arsenic and chalcogens are retained in these glasses and the interatomic distances are close to those predicted from the Pauling covalent atomic radii of the constituent atomic species. The short range order appears to be similar in amorphous and crystalline As₂Se₃, but different in the case of As₂Te₃ as found by previous workers on bulk materials.     

Proton conduction in glass - an impedance and infrared spectroscopic study on hydrous BaSi2O5 glass

Hydrous barium disilicate glasses (BaSi₂O₅) containing 2.75 and 3.54 wt% dissolved water (corresponding to a molar concentration of hydrogen atoms of 11.1 and 14.2 mol/l, respectively) were synthesized by high temperature fusion in an internally heated gas pressure vessel. Near-infrared spectroscopy gives evidence that both OH groups and H₂O molecules are present in the glasses. The maximum intensity in the range of OH stretching vibrations is at 2800 cm⁻¹ indicating strong hydrogen bonding in the glasses. Electric conductivity measurements were carried out at temperatures up to 523 K without significant alteration of the sample. At higher temperatures, OH groups are converted to molecular H₂O and water diffuses out of the sample resulting in a continuous decrease of the conductivity. An activation energy of 87 kJ/mol was derived for the dc conductivity in the unaltered glasses similar to the activation energy for bulk water diffusion in other silicate glasses. Because the dry barium disilicate glass is an electrical insulator at experimental conditions, we infer that the dc conductivity of the hydrous glasses is due to proton conduction.     

AC conductivity of (As2Te3)95Ge5

The elctrical conductivity of amorphous chalcogenide (As₂Te₃)₉₅Ge₅ is investigated at variable frequency, from 1 kHz up to 35 GHz, and a variable temperature, from 77 to 300 K. The low-temperature conductivity is constant with temperature at a fixed frequency. At a fixed temperature, it obeys a ω^0.8 law only at low frequencies. The results are analysed with respect to the polaron problem, but also with a simple model of several dilute localized levels having a wide energy distribution in the forbidden band.     

Structure and physical properties of the glassy As2S3Gex system

Spectroscopical and structural investigations directly reveal the presence of those structural units which were predicted by Myuller and coworkers to form the continuous network of As-S-Ge glasses. After refining Myuller's model to some extent, the variation with x of several physical properties (density, microhardness, electrical dark conductivity, photoconductivity, optical gap and first-neighbour coordination) in the whole series of As₂S₃Ge_x glasses can be either understood qualitatively or even calculated quantitatively with the aid of additivity laws.     

Optical and electronic properties of Fe doped bulk a-As2S3

Several glasses in the (As₂S₃)_100?xFe_x system have been prepared from the melt under a variety of preparation conditions. The AC conductivity and optical properties of the homogeneous samples have been determined and compared with previous published results. The role of the impurity atoms is discussed with reference to spectroscopic experiments aimed at determining the local coordination of the Fe atoms.     

Structural, electrical, and optical properties of As2S3-Cu6PS5I nanocomposites

As₂S₃-Cu₆PS₅I nanocomposites are prepared by incorporation of nanocrystals of Cu₆PS₅I superionic conductor in As₂S₃ glass matrix. Their structural studies by scanning electronic microscopy are performed and the electrical conductivity of the nanocomposites is investigated. The temperature dependence of the nanocomposite optical absorption edge is studied; a non-Urbach behaviour of the absorption edge is revealed. Influence of different types of disordering on the optical absorption edge is studied.     

Thermo-optic properties of B2O3 doped Li2O-Al2O3-SiO2 glass-ceramics

Reduction in the temperature coefficient of the optical path length, dS/dT of Li₂O-Al₂O₃-SiO₂ glass-ceramics with near-zero thermal expansion coefficient was attempted using control of the temperature coefficient of electronic polarizability, ?, and the thermal expansion coefficient, α. The dS/dT value of 2.6 mol% B₂O₃-doped glass-ceramic was 12.5  × 10⁻⁶/°C, which was 0.9 ×  10⁻⁶/°C smaller than that of B₂O₃-free glass-ceramic. On the other hand, reduction in dS/dT through B₂O₃ doping was not confirmed in precursor glasses. Results showed that reduction in dS/dT of the glass-ceramic through B₂O₃ doping is caused by the reduction in ?. The reduction in ? from B₂O₃ doping was probably attributable to numerical reduction in non-bridging oxide ions with larger ? value by the concentration of boron ions in the residual glass phase. In addition, application of hydrostatic pressure during crystallization was effective to inhibit precipitation of β-spodumene solid solution, which thereby decreases dS/dT. The dS/dT value of B₂O₃-doped glass-ceramic crystallized under 196 MPa was 11.7 ×  10⁻⁶/°C. That value was slightly larger than that of silica glass. The α value of this glass-ceramic was smaller than that of silica glass.