霍尔离子源辅助制备长波红外碳化锗增透膜

为了提高锗基底的透过率和环境适应性,镀制了增透保护膜。应用电子枪蒸发加霍尔离子源辅助的方法沉积了碳化锗(Ge_1-xC_x)薄膜。通过固定霍尔离子源参数,控制沉积速率的工艺得到了不同光学常数的碳化锗薄膜。X射线衍射(XRD)测试表明,所制备的碳化锗薄膜在不同的沉积速率下均为无定形结构。采用傅立叶变换红外(FTIR)光谱仪测量了试片的透过率,使用包络法获得了相应工艺条件下的光学常数。在锗基底上双面镀制碳化锗增透膜后,长波红外7.5～11.5 μm波段的平均透过率T_ave>85%。经过环境实验之后的碳化锗膜层完好,证明碳化锗增透膜具有良好的环境适应性。     

Preparation of hydrogenated amorphous germanium by reactive thermal evaporation

Hydrogenated amorphous germanium was prepared by the thermal evaporation of high purity polycrystalline germanium in an atmosphere of hydrogen plasma produced by high voltage AC discharge of molecular hydrogen. The addition of hydrogen during the thermal evaporation of germanium is shown to improve the electrical properties of the resulting amorphous germanium films considerably by saturation of dangling bonds, if the dissociation of molecular hydrogen takes place. Hydrogenated sample deposited at 200°C has shown a high resistivity and an activation type conduction (with an activation energy of 0.38–0.39 eV) in measuring temperature range (above room temperature).     

微波消解石墨炉原子吸收光谱法测定蒙山全蝎中的痕量锗

建立了石墨炉原子吸收光谱法测定蒙山全蝎中痕量元素锗的方法.通过程序控温、控压的分步微波消解方式消解样品,优化石墨炉升温程序,采用Ni(NO3)2为基体改进剂,以氘灯扣除背景,在265.2nm波长下测定蒙山全蝎中痕量元素锗.在选定分析条件下,锗的检出限为0.30μg/L,RSD的范围为1.2%-3.1%,回收率为88.9...     

Resonant Raman scattering by strained and relaxed germanium quantum dots

This paper reports on the results of resonant Raman scattering investigations of the fundamental vibrations in Ge/Si structures with strained and relaxed germanium quantum dots. Self-assembled strained Ge/Si quantum dots are grown by molecular-beam epitaxy on Si(001) substrates. An ultrathin SiO₂ layer is grown prior to the deposition of a germanium layer with the aim of forming relaxed germanium quantum dots. The use of resonant Raman scattering (selective with respect to quantum dot size) made it possible to assign unambiguously the line observed in the vicinity of 300 cm^?1 to optical phonons confined in relaxed germanium quantum dots. The influence of confinement effects and mechanical stresses on the vibrational spectra of the structures with germanium quantum dots is analyzed.     

Structural and optical properties of germanium-doped zinc oxide nanorods as a function of annealing temperature

Zinc oxide nanorods with germanium doping were prepared by ion implantation and annealing treatment method, the microstructural and optical properties of which were studied by means of the X-ray diffraction, photoluminescence, and transmission electron microscopy measurements. The pristine sample exhibited a remarkable ultraviolet emission owing to the band edge emission from the zinc oxide matrix, indicated a good crystalline quality. Three emission peaks appeared after germanium ions were doped into zinc oxide nanorods. The 513?nm photoluminescence peak was ascribed to the transition between the vacancy defect in zinc oxide matrix. Photoluminescence peaks located at 548 and 778?nm were ascribed to germanium ions luminescence center in zinc germanate grain and germanium monoxide luminescence center. The light emission tuning was obtained by germanium doping and annealing treatment, which may help the development of the practical optoelectronic devices based on zinc oxide nanomaterials.     

非晶硅锗电池性能的调控研究

采用射频等离子体增强化学气相沉积技术, 研究了非晶硅锗薄膜太阳电池. 针对非晶硅锗薄膜材料的本身特性, 通过调控硅锗合金中硅锗的比例, 实现了对硅锗薄膜太阳电池中开路电压和短路电流密度的分别控制. 借助于本征层硅锗材料帯隙梯度的设计, 获得了可有效用于多结叠层电池中的非晶硅锗电池. 关键词： 非晶硅锗薄膜太阳电池 短路电流密度 开路电压 带隙梯度     

低压化学气相沉积技术制备锗反蛋白石三维光子晶体

采用溶剂蒸发对流自组装法将单分散SiO2微球组装形成三维有序胶体晶体模板,用低压化学气相沉积法填充高折射率材料锗,酸洗去除SiO2模板,获得了锗反蛋白石三维光子晶体.通过扫描电镜、X射线衍射仪和紫外-可见-近红外光谱仪对锗反蛋白石的形貌、成分、结构和光学性能进行了表征.结果表明：锗在SiO2微球空隙内具有较高的结晶质量,填充致密均匀.通过改变沉积工艺,可控制锗的填充率;制备的锗反蛋白三维光子晶体具有明显的光学反射峰,表现出光学带隙效应.测试的光学性能与理论计算基本吻合.     

单晶锗表面键合光敏染料的研究

本文在烯丙醇单体上进行了两种一甲川菁的合成,并用一种新的化学键合法将两种一甲川菁染料键合在抛光的半导体单晶锗表面。将键合有光敏染料的锗片进行了激光Raman光谱及XPS谱测试,结果表明,与对照锗片相比,键合后的锗片表面,锗衬底的一级拉曼峰强度减少,并在600～3200cm~(-1)范围内出现了与键合颜料分子相应的拉曼频移;在XPS谱中,分别进行了C,N,O,S,卤素等原子的谱图分析,证实了键合颜料后半导体单晶锗表面增加了C—N,S—C,C—O等键,结果与键合的颜料分子结构相符,表明两种光敏染料通过锗氧键共价键合于锗表面。     

食品中无机锗与锗—132的分别测定

采用氢化物发生－原子荧光光谱法（ＨＧ－ＡＦＳ），分别测定了保健饮品中的无机锗和β－羧乙基锗倍半氧化物（即锗－１３２），同时对于天然食品中无机锗和锗－１３２分别测定的条件也进行了初步的探讨。     

Comments on the Lock-Crisp-West theorem with experimental examples

The application of the Lock-Crisp-West (LCW) theorem to positron-annihilation angular-correlation data for copper and germanium as well as to Compton profile data for germanium is presented and discussed. Deviations from the LCW prediction are observed for copper and for germanium, attributable to the positron's presence. In germanium the Compton results indicate near agreement with the LCW expectation; the sensitivity of the theorem is analyzed.     

Study on cosmogenic activation in germanium detectors for future tonne-scale CDEX experiment

A study on cosmogenic activation in germanium was carried out to evaluate the cosmogenic background level of natural and ~(70)Ge depleted germanium detectors. The production rates of long-lived radionuclides were calculated with Geant4 and CRY.Results were validated by comparing the simulated and experimental spectra of CDEX-1B detector. Based on the validated codes, the cosmogenic background level was predicted for further tonne-scale CDEX experiment. The suppression of cosmogenic background level could be achieved by underground germanium crystal growth and high-purity germanium detector fabrication to reach the sensitivity requirement for direct detection of dark matter. With the low cosmogenic background, new physics channels,such as solar neutrino research and neutrinoless double-beta decay experiments, were opened and the corresponding simulations and evaluations were carried out.     

Structure,microhardness, and strength of a directionally crystallized Al-Ge alloy

The structure, microhardness, and strength of binary directionally crystallized aluminum alloys with 35, 43, 53, 57, and 64 wt % germanium have been investigated. It has been shown that the eutectic microhardness is constant in the composition region under study. The microstrength of primary crystals of the solid solution of germanium in aluminum with the dendrite structure increases with increasing germanium concentration. However, the difference in the microhardnesses of the eutectic and dendrites, which was determined for each of compositions on the same specimen, does not exceed the measurement error. It has been assumed that the change in the strength of the alloy having the composition in the hypoeutectic region is determined by the redistribution of the volume fractions of the eutectic (α-Al and eutectic germanium) and the domains of primary crystals of the solid solution. This dependence can be described by the mixture rule. Above the eutectic composition, the alloy decomposes in a brittle manner; its strength is likely dependent not only on the content of the components, but also on the form and orientation of primary germanium crystals.     

Molecular-dynamics calculation of the thermal conductivity coefficient of the germanium single crystal

The thermal conductivity coefficient of the germanium crystal lattice has been calculated by molecular dynamics simulation. Calculations have been performed for both the perfect crystal lattice and the crystal lattice with defects such as monovacancies. For the perfect germanium single crystal, the dependence of the thermal conductivity coefficient on the lattice temperature has been obtained in the temperature range of 150–1000 K. The thermal conductivity coefficient of the germanium lattice has been calculated as a function of the monovacancy concentration.     

Effects of electronically neutral impurities on muonium in germanium

Low-temperature measurements of muonium parameters in various germanium crystals have been performed. We have measured crystals with different levels of neutral impurities, with and without dislocations, and with different annealing histories. The most striking result is the apparent trapping of Mu by silicon impurities in germanium.     

A contribution to the question of thermal acceptors in germanium

The motion and decay of thermal acceptors in germanium was studied using the method of saturation and the extraction of solid germanium by means of a liquid alloy of Ge/Sn. The qualitative results obtained confirm that the production of thermal acceptors in germanium is conditioned by the presence of copper and in addition prove the applicability of this method to the solution of similar problems.     

Germanium–vacancy color center in isotopically enriched diamonds synthesized at high pressures

We report on the high-pressure synthesis of novel nano- and microcrystalline diamonds with germanium–vacancy (Ge–V) color centers emitting at 602 nm. The synthesis was carried out in non-metallic growth systems C–H–Ge and C–H–O–Ge enriched with germanium and carbon isotopes. We demonstrate germanium and carbon isotope shifts in the fine structure of the luminescence, which allows us to unambiguously associate the center with the germanium impurity entering into the diamond lattice. We show that there are two ground-state energy levels with the separation of 0.7 meV and two excited-state levels separated by 4.6 meV in the electronic structure of the center and suggest a split-vacancy structure of this center. High-intensity and narrow-line emission of high-pressure synthesized small diamonds with Ge–V centers makes them promising candidates for single-photon emitters.     

Lattice defects of Bi2Se3 doped with germanium

Homogeneous Bi₂Se₃ crystals with various germanium content were prepared by means of modified Bridgman technique. Reflectivity measurements in the region of plasma resonance frequency of the free carriers revealed a shift of the reflectivity minimum towards shorter wavelengths for samples with higher germanium content. Combining the reflectivity data and the results of the Hall constant measurement we determined the free-carrier concentration for individual Ge-doped Bi₂Se₃ samples. It is shown that the germanium atoms give rise to donor levels. The ionization energy of these levels was estimated at less than 0·026 eV. The donor levels are most probably connected with the existence of singly ionized germanium atoms in interstitial positions.     

Test of pulse shape analysis using single Compton scattering events

Procedures developed to separate single- and multiple-site events in germanium detector are tested with specially selected event samples provided by an 18-fold segmented prototype germanium detector for phase II of the germanium detector array, GERDA. The single Compton scattering, i.e. single-site, events are tagged by coincidently detecting the scattered photon with a second detector positioned at a defined angle. A neural network is trained to separate such events from events which come from multi-site dominated samples. Identification efficiencies of ≈80% are achieved for both single- and multi-site events. PACS 23.40.-s; 14.60Pq; 29.40.-n     

痕量锗的HG-ICP测定及介质对其测定的影响的研究

采用氢化物发生-电感耦合等离子体原子发射光谱法测定痕量锗的方法,系统地考察了不同酸介质、NaBH₄浓度及共存元素的影响,确定了最佳测定条件。方法的检出限为0.2 ng·mL-1,精密度为0.9%。用环境标准物质进行对照,其测定值均在给定的标准范围之内。并且针对反应介质对锗测定的影响,进行了详尽的研究。     

Pressure-induced sharp coordination change in liquid germanate

Local structures around germanium in liquid germanate have been investigated by means of in situ x-ray absorption measurements up to 9 GPa at 1273 K. Liquid germanate consisting of tetrahedrally coordinated germanium contracts with increasing pressure without significant changes in the local structure up to 2.5 GPa and then shows an abrupt fourfold-to-sixfold coordination change around 3 GPa. The coordination change is completed below 4 GPa where upon a high-density liquid consisting of octahedrally coordinated germanium becomes stable. The GeO6 octahedron in the high-density liquid is more compressible than that in solids.