Comparative study on Cu2ZnSn(S,Se)4 based thin film solar cell performances by adding various back surface field (BSF) layers

In this research work, SCAPS-1D (Solar Cell Capacitance Simulator in one Dimension) is used to simulate the CZTSSe (Cu2ZnSn(S,Se)4) solar cell with Al/ZnO:Al/ZnO(i)/CdS/CZTSSe/Mo structure. The simulation results have been compared and validated with real experimental results. After that, an effective receipt is proposed with the aim of improving the efficiency of the CZTSSe solar cell, in which a BSF layer is inserted using various materials (SnS, CZTSSe and CZTSe). The obtained results show that the efficiencies of CZTSSe solar cells are increased from 12.3% to 15.7%, 15.3% and 15% by the insertion of SnS, CZTSSe and CZTSe materials as BSF layers, respectively. This enhancement corresponds with a BSF layer thickness of 30 nm and doping concentration of 1E18 cm⁻³. Next, an optimization of BSF layers thickness has been conducted. The optimum value of thickness is considered at 40 nm with an enhancement ratio in efficiency of 36.70%, 26.21% and 21.53% for SnS, CZTSSe and CZTSe, respectively. Better performances have been noted for SnS material. The optimized CZTSSe solar cell with SnS as a BSF layer achieves an efficiency of 16.95% with J_SC = 36.34 mA/cm², V_OC = 0.69 V, and FF = 67% under Standard Test Conditions (AM1.5 G and cell temperature of 25 °C).     

Fabrication and device characterization of potassium fluoride solution treated CZTSSe solar cell

Post deposition treatment (PDT) for Cu₂ZnSn(S,Se)₄ (CZTSSe) was carried out by simply dipping the absorber into the KF solution at 80 °C. The dipping time of absorber in KF solution was found to be crucial to device parameters of CZTSSe solar cell. The K-doping improved the solar cell efficiency from 4.4% to 7.6% by 1 min dipping whereas the longer than 5 min dipping solar cells showed distorted kink J-V curves. The activation energy of CZTSSe solar cell was increased upto 1 min KF treatment from 0.83 eV to 0.92 eV which indicates interface recombination is reduced significantly. However, the activation energies of 5 min and 10 min dipping solar cells were found to be 0.81 eV and 0.63 eV where dominant recombination was interface recombination. Furthermore, trap energies of 49 meV and 298 meV of pristine CZTSSe solar cell were modified to 33 meV and 117 meV for 1 min treated CZTSSe solar cell. Trap energies of 5 min were calculated to be 112 meV and 147 meV. The proper KF doping passivated the shallow as well as deep defects of CZTSSe solar cell which is reflected in photovoltaic performances directly.     

Cu2ZnSn(S1–xSex)4 thin film solar cells prepared by water‐based solution process

The kesterite Cu₂ZnSn(S_1–xSe_x)₄ (CZTSSe) thin film solar cell has been developed rapidly due to its excellence in structural and optical properties and its abundance in raw materials. Both vacuum‐based and solution‐based methods have been successfully employed to fabricate CZTSSe thin film solar cells. In this Letter, we report an environmentally friendly, water‐based, solution process for fabrication of high‐efficiency CZTSSe thin film solar cells. High quality CZTSSe thin film is obtained by selenization under high temperature and Se vapor. An efficiency of 6.2% is achieved on CZTSSe thin film solar cell fabricated by such water‐based solution process. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of P<Superscript>+</Superscript>-ZnTe back surface contact on photovoltaic performance of ZnTe based solar cells

In order to improve photovoltaic performance of solar cells based on ZnTe thin films two device structures have been proposed and its photovoltaic parameters have been numerically simulated using Solar Cell Capacitance Simulator software. The first one is the ZnO/CdS/ZnTe conventional structure and the second one is the ZnO/CdS/ZnTe/P⁺-ZnTe structure with a P⁺-ZnTe layer inserted at the back surface of ZnTe active layer to produce a back surface field effect which could reduce back carrier recombination and thus increase the photovoltaic conversion efficiency of cells. The effect of ZnO, CdS and ZnTe layer thicknesses and the P⁺-ZnTe added layer and its thickness have been optimized for producing maximum working parameters such as: open-circuit voltage V_oc, short-circuit current density J_sc, fill factor FF, photovoltaic conversion efficiency η. The solar cell with ZnTe/P⁺-ZnTe junction showed remarkably higher conversion efficiency over the conventional solar cell based on ZnTe layer and the conversion efficiency of the ZnO/CdS/ZnTe/P⁺-ZnTe solar cell was found to be dependent on ZnTe and P⁺-ZnTe layer thicknesses. The optimization of ZnTe, CdS and ZnTe layers and the inserting of P⁺-ZnTe back surface layer results in an enhancement of the energy conversion efficiency since its maximum has increased from 10% for ZnO, CdS and ZnTe layer thicknesses of 0.05, 0.08 and 2 µm, respectively to 13.37% when ZnO, CdS, ZnTe and P⁺-ZnTe layer thicknesses are closed to 0.03, 0.03, 0.5 and 0.1 µm, respectively. Furthermore, the highest calculated output parameters have been J_sc?=?9.35 mA/cm², V_oc?=?1.81 V, η?=?13.37% and FF?=?79.05% achieved with ZnO, CdS, ZnTe, and P⁺-ZnTe layer thicknesses about 0.03, 0.03, 0.5 and 0.1 µm, respectively. Finally, the spectral response in the long-wavelength region for ZnO/CdS/ZnTe solar cells has decreased at the increase of back surface recombination velocity. However, it has exhibited a red shift and showed no dependence of back surface recombination velocity for ZnO/CdS/ZnTe/P?+?-ZnTe solar cells.     

Enhancing the performance of thin film CdS/PbS photovoltaic solar cells

This work investigates dependence of the short-circuit current density, open-circuit voltage, fill factor and efficiency of a thin film CdS/PbS solar cell on thickness of transparent conductive oxide (TCO) layer, thickness of window layer (CdS), concentration of uncompensated acceptors (width of space-charge region), carrier lifetime in PbS and the reflectivity from metallic back contact. The effect of optical losses, front and rear recombination losses as well as the recombination losses on space-charge region are also considered in this study. As a result, by thinning the front contact layer indium tin oxide from 400 to 100 nm and window layer (CdS) from 200 to 100 nm it is possible to reduce the optical losses from 32 to 20%. The effect of electron lifetime on the internal and external quantum efficiency can be neglected at high width of the space-charge region. The maximum current density of 18.4 mA/cm² is achieved at wide space-charge region (concentration of uncompensated acceptors = 10¹⁵ cm^?3) and the longest lifetime (τ_n = 10^?6 s) where the optical and recombination losses are about 55%. The maximum efficiency of 5.17%, maximum open-circuit voltage of 417 mV and approximately fixed fill factor of 74% are yielded at optimum conditions such as: electron lifetime = 10^?6 s; concentration of uncompensated acceptors = 10¹⁶ cm^?3; thickness of TCO = 100 nm; thickness of CdS = 100 nm; velocity of surface and rear recombination = 10⁷ cm/s and thickness of absorber layer = 3 μm. When the reflectance from the back contact is 100%, the cell parameters improve and the cell efficiency records a value of 6.1% under the above conditions.     

Application of multi-buffer layer of (Zn,Mg)O/CdS in Cu2ZnSn(S,Se)4 solar cells

(Zn,Mg)O (ZMO) buffer layer has attracted attention for having the potential to control the conduction band offset of buffer layer and large band-gap (Eg) Cu₂ZnSn(S,Se)₄ (CZTSSe) absorber interface, where the ZMO layer is deposited by the sputtering. However, the solar cell efficiency is decreased with the ZMO layer as compared with the CdS layer. The decrease in conversion efficiency is attributed to the sputtering damage on the absorber and high light reflection from the surfaces of CZTSSe solar cells. To completely suppress the damage, a CdS layer with very thin thickness of 20 nm is inserted between the ZMO layer and the CZTSSe layer. In addition, MgF₂ layers are deposited on CZTSSe solar cells as anti-reflection coating. Ultimately, the solar cell with multi-buffer layer of ZMO/thin-CdS is almost same level as that with the CdS layer. Therefore, the multi-buffer layer can be an appropriate buffer layer of the large-Eg CZTSSe layer.     

Back contact–absorber interface modification by inserting carbon intermediate layer and conversion efficiency improvement in Cu2ZnSn(S,Se)4 solar cell

Carbon layers have been employed as intermediate layers between Mo back contact and Cu₂ZnSn(S_1–xSe_x)₄(CZTSSe) absorber film prepared by sol–gel and post‐selenization method. Carbon layers with appropriate thickness can significantly inhibit the formation of MoSe₂ and voids at bottom region of the absorber, and therefore reduce the series resistance remarkably. The conversion efficiency can be boosted by the introducing of the carbon layer from 6.20% to 7.24% by enhancement in short current density, fill factor and open voltage in comparison to the reference sample without carbon layer. However, excess thickness of carbon layer will worse device performance due to the deteriorated absorber crystallinity. In addition, the time‐resolved photoluminescence analysis shows that inserting the carbon layer with suitable thickness does not introduce recombination and lower minority lifetime. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Enhanced photovoltaic performance of solution-processed Sb2Se3 thin film solar cells by optimizing device structure

Thin-film solar cells have attracted worldwide attention due to their high efficiency and low cost. Antimony selenide (Sb₂Se₃) is a promising light absorption material candidate for thin-film solar cells due to its suitable band gap, abundance, low toxicity, and high chemical stability. Herein, we fabricate an Sb₂Se₃ thin film solar cell using a simple hydrazine solution process. By controlling the thickness of the photoactive layer and inserting a poly(3-hexylthiophene) hole-transporting layer, an Sb₂Se₃ solar cell with a power conversion efficiency of 2.45% was achieved.     

Numerical analysis of ultrathin Sb2Se3-based solar cells by SCAPS-1D numerical simulator device

Antimony selenide is considering as an emerging photovoltaic solar cell absorber. In this paper, Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D) is used to investigate the possibility of realizing ultrathin Sb₂Se₃-based solar cells. The comparison of the current-voltage characteristic and output performances simulation results of CdS/Sb₂Se₃ solar cells with and without HTL are in agreement with the experimental results. In the first step, by considering the cell without HTL, the best PCE of 5.29% is obtained with WS₂ buffer layer. Thereafter, we simulated the impact of the charge carriers diffusion length and the doping concentration on the output performances. By combining a high quality absorber and doping concentration in the order of 10¹⁵ cm⁻³, Sb₂Se₃ solar cell achieves high PCE above 10%. Secondly, we introduced a HTL between the absorber layer and back metal contact, which led to n-i-p configuration. This configuration with CZ-TA HTL shows a best PCE of 6.29%. For a high quality absorber, Sb₂Se₃-based solar cell achieves best PCE of 11.10% and better stability for a thickness of 250 nm and doping concentration of 10¹⁴ cm⁻³ of the Sb₂Se₃ absorber layer. Our numerical solar cell design provides an approach to further improve the efficiency of Sb₂Se₃-based solar cells.     

Efficiency enhancement of flexible dye-sensitized solar cell with sol–gel formed Nb2O5 blocking layer

We investigated the effect of a Nb₂O₅ blocking layer formed through the sol–gel method introduced to a titanium metal foil electrode in a flexible dye sensitized solar cell. The blocking layer formed directly on the working electrode physically separates the working electrode from the electrolyte, and prevents back transfer of electrons from the electrode to the electrolyte. The gel processing conditions (sol reaction time) and heat treatment temperature used in formation of the Nb₂O₅ blocking layer have been shown to affect the performance of the dye sensitized solar cell and optimal values of these parameters have been determined. A sol reaction time of 45 min and heat treatment temperature of 550 °C has been observed to result in optimal cell performance (η = 6.185%, J_sc = 13.233 mA/cm², V_oc = 0.672 V, ff = 0.694). Introduction of an Nb₂O₅ blocking layer enhances solar cell efficiency by 39.7%, which is much greater than the increase of 24.6% observed in a similar cell containing a TiO₂ blocking layer under standard illumination conditions. The results obtained via Nb₂O₅ have been observed to be superior to those obtained via a TiO₂ blocking layer.     

Configuration and Performance of a Mobile 129Xe Polarizer

A stand-alone, self-contained and transportable system for the polarization of ¹²⁹Xe by spin exchange optical pumping with Rb is described. This mobile polarizer may be operated in batch or continuous flow modes with medium amounts of hyperpolarized ¹²⁹Xe for spectroscopic or small animal applications. A key element is an online nuclear magnetic resonance module which facilitates continuous monitoring of polarization generation in the pumping cell as well as the calculation of the absolute ¹²⁹Xe polarization. The performance of the polarizer with respect to the crucial parameters temperature, xenon and nitrogen partial pressures, and the total gas flow is discussed. In batch mode the highest ¹²⁹Xe polarization of P_Xe = 40 % was achieved using 0.1 mbar xenon partial pressure. For a xenon flow of 6.5 and 26 mln/min, P _Xe = 25 % and P _Xe = 13 % were reached, respectively. The mobile polarizer may be a practical and efficient means to make the applicability of hyperpolarized ¹²⁹Xe more widespread.     

Effects of Gd<Superscript>3+</Superscript> modifications on the photoelectrochemical properties of TiO<Subscript>2</Subscript>-based dye-sensitized solar cells

In this paper, TiO₂ particles (~30 nm) modified with Gd₂O₃-coating layer (~2 nm) for dye-sensitized solar cells (DSSCs) were fabricated via the hydrothermal method. Among the solar cells based on the Gd³⁺-doped TiO₂ photoanodes, the optimal conversion efficiency was obtained from the 0.025Gd³⁺-modified TiO₂-based cell, with a 17.7% improvement in the efficiency as compared to the unmodified one (7.18%). This enhancement was probably due to the improved UV radiation harvesting via a down-conversion luminescence process by Gd³⁺ ions, enhancement of visible light absorption and improved dye loading capacity. In addition, after Gd modification, a thin coating could be formed on the TiO₂ nanoparticles, which worked as an energy barrier and resulted in a lower charge recombination.     

Enhancement of output performance of Cu2ZnSnS4 thin film solar cells—A numerical simulation approach and comparison to experiments

The formation of stable, low resistance and nonrectifying contacts to Cu₂ZnSnS₄ (CZTS) thin film photovoltaic material are the major and critical challenges associated with its effect over the output performance of fabricated solar cells. The solution of continuity equation in one dimension for a soda lime glass substrates (SLG) |Mo | CZTS | CdS | ZnO:Al cell structure is considered in the simulation of its current–voltage characteristics that is governed by the back contact material, acceptor concentration as well as thickness of the CZTS layer. Our primary simulation shows a 6.44% efficiency of the CZTS solar cell which is comparable to reported experimental data if these parameters are not optimized. However, by optimizing them a simulated conversion efficiency as high as 13.41% (V_oc=1.002 V, J_sc=19.31 mA/cm², fill factor (FF)=69.35%) could be achievable. The solar cell with a back contact metal work function of 5.5 eV, an absorber layer's thickness of 2.68 μm and an acceptor concentration of 5×10¹⁶ cm⁻³ were optimum. The presented optimization is ideal and subject to experimental verification with a precise control of the process parameters along with reduced surface as well as bulk recombination, secondary phases and thermalization losses.     

Robust doped BaCeO<Subscript>3-δ</Subscript> electrolyte for IT-SOFCs

Single phase polycrystalline BaZr_0.3Ce_0.5Y_0.1Yb_0.1O_{3 - δ} electrolyte material was prepared by solid state reaction route. Rietveld analysis of the XRD data confirms the tetragonal symmetry in the I4/mcm space group with unit cell parameters of a = b = 6.0567(3) Å and c = 8.5831(5) Å. The addition of ZnO as a sintering additive was found to reduce the sintering temperature and enhance both overall sinterability and grain growth. Sintering temperature was reduced by 200–300 °C, and a very high relative density of about 98% was achieved at 1400 °C. Impedance spectroscopy in humidified 5% H₂/Ar atmosphere shows that the protonic conductivity at 600 °C was 8.60 × 10^?3 S cm^?1. Thermal analysis performed in pure CO₂ atmosphere shows very good chemical stability up to 1200 °C. Good biaxial flexure strength of 100–200 MPa was reported which makes this material a promising electrolyte material for intermediate temperature solid oxide fuel cells (IT-SOFCs).     

渐变带隙氢化非晶硅锗薄膜太阳能电池的优化设计

利用一维微电子-光电子结构分析软件(AMPS-1D)在AM1.5G(100 mW/cm2)、室温条件下模拟和比较了有、无渐变带隙氢化非晶硅锗(a-SiGe:H)薄膜太阳能电池的各项性能.计算结果表明:渐变带隙结构电池具有较高的开路电压(V oc)和较好的填充因子(FF),转换效率(E ff)比非渐变带隙电池提高了0.477%.研究了氢化非晶硅(a-Si:H)、氢化非晶碳化硅(a-SiC:H)和氢化纳米晶硅(nc-Si:H)三种不同材料的窗口层对a-SiGe:H薄膜太阳能电池性能的影响.结果显示:在以nc-Si:H为窗口层的电池能带中,费米能级E F已经进入价带,使得窗口层电导率及电池开路电压有所提高,又由于ITO与p-nc-Si:H的接触势垒较低,使得接触处的电场降低,更有利于载流子的收集.另一方面,窗口层与a-SiGe:H薄膜之间存在较大的带隙差,在p/i界面由于能带补偿作用形成了价带势垒(带阶)?E v,阻碍了空穴的迁移,因此我们在p/i界面引入缓冲层,使得能带补偿作用得到释放,更有利于空穴的迁移和收集,得到优化后单结渐变带隙a-SiGe:H薄膜结构太阳能电池的转换效率达到了9.104%.     

利用不同阴极缓冲层来改善Pentacene/C60太阳能电池的性能

制备了结构为ITO/Pentacene/C₆₀/Al的双层光伏电池器件,在C₆₀/Al界面插入了常用的缓冲层材料bathocuproine(BCP)作为阴极缓冲层,通过优化BCP层的厚度来提高电池的性能并研究了阴极缓冲层的作用机理.实验发现,BCP厚度为10 nm时器件的效率最高,为0.46%.在此基础上,利用bathophenanthroline(Bphen)和3,4,9,10-Perylenetetracarb-oxylicdianhydride(PTCDA 关键词： 有机太阳能电池 Pentacene 60')" href="#">C₆₀ 缓冲层     

Natural dye-based photoelectrode for improvement of solar cell performance

In the present paper, photovoltaic studies of dye-sensitized solar cells (DSSCs) based on betacyanin/TiO₂ and betacyanin/WO₃–TiO₂ have been done. The cell performances were compared through I–V curves and wavelength dependant photocurrent measurements for the two new types of DSSCs. The TiO₂-coated DSSC showed the photovoltage and photocurrent of 300 mV and 4.96 mA/cm², whereas the cell employing WO₃–TiO₂ photoelectrode showed the values 435 mV and 9.86 mA/cm², respectively. The conversion efficiency of TiO₂ based dye-sensitized solar cell was found to be 0.69 %, while WO₃–TiO₂-based cell exhibited a higher conversion efficiency of 2.2 %. The better performance of the WO₃–TiO₂ dye-sensitized solar cell photoelectrode is thought to be due to an inherent energy barrier at the electrode/electrolyte interface leading to the reduced recombination of photoinduced electrons.     

One-pot,large-scale synthesis silica-encapsulated NIR alloy quantum dots CdSeTe within short time

Hydrothermal process has been employed to synthesize titanium oxide (TiO₂) bottle brush. The nanostructured bottle brushes with tetragonal nanorods of ~75 nm diameter have been synthesized by changing the nature of the precursors and hydrothermal processing parameters. The morphological features and structural properties of TiO₂ films were investigated by field emission scanning electron microscopy, X-ray diffraction, high-resolution transmission electron spectroscopy, Fourier transform Raman spectroscopy, and X-ray photoelectron spectroscopy. The influence of such nanostructures on the performance of dye-sensitized solar cells (DSSCs) is investigated in detail. The interface and transient properties of these nanorods and bottle brush-based photoanodes in DSSCs were analyzed by electrochemical impedance spectroscopic measurements in order to understand the critical factors contributing to such high power conversion efficiency. Surface area of sample was recorded using Brunauer–Emmett–Teller measurements. It is found that bottle brush provides effective large surface area 89.34 m² g^?1 which is much higher than TiO₂ nanorods 63.7 m² g^?1. Such effective surface area can facilitate the effective light harvesting, and hence improves the dye adsorption and the photovoltaic performance of DSSCs, typically in short-circuit photocurrent and power conversion efficiency. A best power conversion efficiency of 6.63 % has been achieved. We believe that the present device performance would have wide interests in dye-sensitized solar cell research.     

Searching of new,cheap, air- and thermally stable hole transporting materials for perovskite solar cells

In this work, two thermal- and air-stable, hole transporting materials (HTM) in perovskite solar cells are analyzed. Those obtained and investigated materials were two polyazomethines: the first one with three thiophene rings and 3,3′-dimethoxybenzidine moieties (S9) and the second one with three thiophene rings and fluorene moieties (S7). Furthermore, presented polyazomethines were characterized by Fourier transform infrared spectroscopy (FTIR), UV–vis spectroscopy, atomic force microscopy (AFM) and thermogravimetric analysis (TGA) experiments. Both polyazomethines (S7 and S9) possessed good thermal stability with a 5% weight loss at 406 and 377 °C, respectively. The conductivity of S7 was two orders of magnitude higher than for S9 polymer (2.7 × 10^?8 S/cm, and 2.6 × 10^?10 S/cm, respectively). Moreover, polyazomethine S9 exhibited 31 nm bathochromic shift of the absorption band maximum compared to S7.Obtained perovskite was investigated by UV–vis and XRD. Electrical parameters of perovskite solar cells (PSC) were investigated at Standard Test Conditions (STC). It was found that both polyazomethines protect perovskite which is confirmed by ageing test where V_oc did not decrease significantly for solar cells with HTM in contrast to solar cell without hole conductor, where V_oc decrease was substantial. The best photoconversion efficiency (PCE = 6.9%), among two investigated in this work polyazomethines, was obtained for device with the following architectures FTO/TiO₂/TiO₂ + perovskite/S7/Au. Stability test proved the procreative effects of polyazomethines on perovskite absorber.     

Doped SiO x emitter layer in amorphous/crystalline silicon heterojunction solar cell

In this work we propose to replace the emitter layer of the n-type doped a-Si:H/p-type doped crystalline silicon heterojunction solar cell, with an n-type doped SiO _x amorphous oxide layer. The n-type doped SiO _x :H shows a lower activation energy and higher carrier mobility value with respect to the n-type doped a-Si:H. Moreover, higher transmission, below 500 nm of wavelength, and higher conductivity are measured. The relevance of transparency of the (n) a-SiO _x :H has been studied using that film in solar cells. The electrical parameters revealed a solar cell efficiency of 15.8 %. Moreover, the effect of TCO as a front side cell electrode is considered and discussed on the base of its workfunction when applied on top of the n-type doped SiO _x emitter layer using also numerical simulations.