富勒稀纳米颗粒的拉曼光散射(英文)

pacc:7560J,7830WepresentresultsofRamanscatteringspec trainvestigationsinfluoroorganicnanoparticles:longzigzagmoleculesCnF2n 2withdifferentn valueandultradispersivefluoroorganicpowder.Ramanspectrahavebeenrecordedforlow-frequencyregion(0-200cm-1),whereres o…     

纳米尺寸的ZnO晶体高压相变的拉曼散射研究(英文)

Weperformedthehigh-pressureRaman measurementofthethreenanosizedZnOcrystals. Wefoundthesmallerthesize,thehigherthe pressuretoinducethephasetransitionfrom w櫣rzitetorock-saltstructure. High-pressureRamanmeasurementsof nona-shapedZnOcrystalswerepreformed.The…     

金纳米颗粒阵列基底的化学置换制备及其表面增强拉曼散射特性研究

表面增强拉曼(SERS)作为一种分析手段,具有高灵敏度、高选择性、高重复性、非破坏性等优点,在过去的几十年中,被广泛应用在成分检测、环境科学、生物医药及传感器等领域。其中以金、银等贵金属纳米颗粒薄膜在表面增强拉曼(SERS)活性基底方面得到了更为广泛的应用。SERS技术一个关键的因素是如何制设计并备具有大面积、高增强能力及高重复性、可循环使用的SERS基底。通常,贵金属纳米颗粒规则阵列结构的单元颗粒电磁增强特性及其颗粒间的电磁耦合增强特性的综合作用可大力提升SERS基底的探测性能。然而,利用传统微纳米加工方法如光刻、电子束光刻等方法制备得到的贵金属纳米阵列结构的表面粗糙度不够理想。结合光刻与化学置换方法制备金纳米颗粒四方点阵列孔洞结构,并研究其作为SERS基底的电磁增强特性。具体研究利用光刻法在硅衬底上制备了规则排列的四方点阵列孔洞结构,用磁控溅射在其表面镀上金属铁膜;接着在衬底上旋涂浓度为1.893 8 mol·L-1的氯金酸液膜,在孔洞内铁和氯金酸发生置换反应,进而孔洞生成金纳米颗粒,最终得到金纳米颗粒四方点阵SERS活性基底。采用罗丹明6G(R6G)分子作为探测分子测试不同金纳米颗粒阵列结构基底的SERS谱。实验结果表明,随着化学置换反应时间的延长,金纳米颗粒排列更加紧凑有序,SERS谱增强性能更好。     

太赫兹波段纳米颗粒表面增强拉曼散射的研究

研究了太赫兹波段纳米颗粒的表面增强拉曼散射,证明在太赫兹波段同样存在拉曼增强现象。通过研究表面增强拉曼散射的电磁增强原理,提出利用时域有限差分法仿真模拟纳米颗粒在太赫兹波照射下的表面增强拉曼散射,分析了太赫兹波的增强效果。仿真实验表明,时域有限差分法可以有效精确仿真太赫兹波段纳米颗粒的散射效果,结果使表面增强拉曼散射从可见光和红外波段扩展到太赫兹波段,为太赫兹波与表面增强拉曼散射的结合应用提供了依据。     

温度对CdS纳米颗粒形状和光致发光特性的影响

采用反胶束法,在常温和低温下(接近零度)合成了硅土包裹的CdS纳米颗粒.高分辨电镜表明常温下合成的颗粒呈现直径小于5 nm的球形,而在低温下出现了短棒形和长达微米量级的线形.通过对实验过程的分析表明:不仅合成CdS纳米颗粒溶液的浓度,而且温度对CdS纳米颗粒的形状产生了重要的影响.进一步研究了CdS纳米颗粒的光致发光特性.     

纳米结构Si表面增强拉曼散射特性研究

为了实现低成本高灵敏度的表面增强拉曼散射效应,制备了一种基于硅表面纳米结构的表面增强拉曼散射效应（SERS）衬底。首先利用低能反应离子注入的方法对单晶硅进行表面处理,制作高陡值度的墙壁结构。然后采用电子束蒸发的方式在硅片表面蒸镀银膜,高密度的银纳米点阵列出现在侧壁表面,形成大量的热点。实验采用罗丹明6G（R6G）作为探针分子进行表征,发现获得最强拉曼信号的银膜厚度为40 nm,R6G的探测极限能达到10^-14 mol/L;同时分析衬底的重复性和稳定性,发现在614 cm^-1和1 650 cm^-1处的拉曼信号特征峰的相对标准偏差分别达到12.3%和14.3%,保存一个月的衬底测得的拉曼信号强度保持不变。本研究提供了一种操作简单、成本低的制备高灵敏度增强拉曼效应衬底的方法,制备的衬底具有高信号可重复性和高稳定性的优点。     

用拉曼散射光谱估算纳米Ge晶粒平均尺寸

用射频共溅射技术和真空退火方法制备了埋入ＳｉＯ２基底中的纳米Ｇｅ复合膜（ｎｃ－Ｇｅ／ＳｉＯ２）测量了不同温度退火后该复合膜的拉曼散射光谱，其结果与晶体Ｇｅ的拉曼谱相比，纳米Ｇｅ的拉曼峰红移峰形变宽，用拉曼谱的参数计算了纳米Ｇｅ晶粒的平均尺寸，所得结果与声子限域理论模型符合。     

银纳米颗粒阵列的表面增强拉曼散射效应研究

利用具有高密度拉曼热点的金属纳米结构作为表面增强拉曼散射(SERS)基底,可以显著增强吸附分子的拉曼信号.本文通过阳极氧化铝模板辅助电化学法沉积制备了高密度银(Ag)纳米颗粒阵列;利用扫描电子显微镜和反射谱表征了样品的结构形貌和表面等离激元特性;用1, 4-苯二硫醇(1, 4-BDT)为拉曼探针分子,研究了Ag纳米颗粒阵列的SERS效应.通过优化沉积时间,制备出高SERS探测灵敏度的Ag纳米颗粒阵列,检测极限可达10~(-13)mol/L;时域有限差分法模拟结果证实了纳米颗粒间存在强的等离激元耦合作用,且发现纳米颗粒底端的局域场增强更大.研究结果表明Ag纳米颗粒阵列可作为高效的SERS基底.     

Raman scattering from microcrystals

This review discusses the size effects on Raman scattering from microcrystals. For ionic microcrystals, the existence of surface phonon modes is predicted from electromagnetic theories. It is shown that Raman spectroscopy is very effective to detect the surface phonon modes. The size effects on nonpolar phonons in covalent microcrystals can also be studied by Raman spectroscopy. However, the relaxation of the wave-vector selection rule or the phonon confinement explains only some of the experimental data. Development of lattice dynamical theories of Raman scattering from microcrystals including surface effects is highly required. Enhancement of Raman intensities arising from the excitation of electromagnetic normal modes of microcrystals is also discussed.     

Raman scattering and photoluminescence of zinc telluride nanopowders at room temperature

Zinc telluride (ZnTe) powders were synthesized in sodium hydroxide solution by the hydrothermal method under different conditions, in which zinc and tellurium powders were used as precursors. Their structures were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy, transmission electron microscopy, and micro-Raman spectrometer. The results indicate that the powders are composed of ZnTe nanocrystals with zincblende structure and contain some impurities, and the average sizes of ZnTe nanocrystals are about 67, 92, and 112 nm when they were grown at 120 °C for 1, 2, and 6 h, respectively. The Raman spectra show three peaks centered at about 205, 410, and 616 cm⁻¹, which are attributed to the longitudinal optical phonon vibration modes of ZnTe. The photoluminescence (PL) of ZnTe nanopowders were also investigated at room temperature and the PL spectra show three emission peaks at about 555, 578, and 701 nm, which are related to the complex defects and isolelectronic oxygen trap.     

KDP晶体受激拉曼散射特性

详细比较了磷酸二氢钾(KDP)晶体的自发拉曼散射和受激拉曼散射光谱,在受激拉曼散射(SRS)中观察到了自发拉曼散射中最强的振动模的三阶Stokes光(559.43,589.74,623.50nm),由于其他振动模的受激拉曼散射增益系数较小,其SRS光谱未观察到。另外,比较了传统生长的未退火和退火后的KDP晶体及快速生长的锥区和柱区KDP晶体的受激拉曼散射增益系数,结果表明生长方法和热退火对KDP晶体的受激拉曼散射增益系数无明显影响。     

KDP晶体受激拉曼散射特性

详细比较了磷酸二氢钾(KDP)晶体的自发拉曼散射和受激拉曼散射光谱,在受激拉曼散射(SRS)中观察到了自发拉曼散射中最强的振动模的三阶Stokes 光(559.43, 589.74, 623.50 nm),由于其他振动模的受激拉曼散射增益系数较小,其SRS光谱未观察到。另外,比较了传统生长的未退火和退火后的KDP晶体及快速生长的锥区和柱区KDP晶体的受激拉曼散射增益系数,结果表明生长方法和热退火对KDP晶体的受激拉曼散射增益系数无明显影响。     

High‐pressure Raman and photoluminescence of highly anisotropic CdS nanowires

Raman and photoluminescence of CdS nanowires of diameter 80 nm and lengths up to several tens of micrometers were studied at pressure up to 60 kbar using a Jobin‐Yvon T64000 micro‐Raman system in conjunction with the diamond‐anvil cell technique. The phase transition pressure of wurtzite to rock salt was observed at 38 kbar, which is higher than that of bulk CdS. In contrast with the transition pressure of different‐sized CdS nanocrystal, this elevated phase transition pressure cannot be explained well by the size effect. Thus the contribution of particle morphology of such a system, which represents the low‐energy surface structure, should be considered. The pressure dependence of photoluminescence is also discussed. Copyright © 2007 John Wiley & Sons, Ltd.     

Third-order nonlinear optical properties of multiwalled carbon nanotubes modified by CdS nanoparticles

CdS nanoparticles were coated on the side wall of multiwalled carbon nanotubes (MWCNTs) by a wet chemical synthesis approach via noncovalent functionalization of MWCNTs with poly(diallyldimethylammonium chloride) (PDDA). The as-prepared material was characterized by X-ray diffraction (XRD), UV–vis absorption, fluorescence and transmission electron microscopy (TEM). The results indicated that CdS nanoparticles were uniformly coated on the surface of MWCNTs. Third-order optical nonlinearity of the as-prepared material was studied with the Z-scan technique with picosecond laser pulses at 532 nm. The Z-scan curve revealed that CdS nanoparticle-modified MWCNTs exhibited negative nonlinear refraction index and positive absorption coefficient. The real part and imaginary part of the third-order nonlinear susceptibility χ⁽³⁾ were calculated to be −4.9 × 10⁻¹² and 6.8 × 10⁻¹³ esu, respectively.     

拉曼对光散射的实验研究

介绍了拉曼的生平和对物理学的主要贡献，回顾了他从观察海水的蓝色人手，继而发现气体、液体对光的散射规律，一直到发现物质的散射光不仅包含原来的波长，而且还包括与原入射光不同的其他波长的散射的研究过程，并讨论了他的成功对我们的启示．     

Raman properties embeddedof GaSb nanoparticlesin SiO2 films

The Raman shifts of nanocrystalline GaSb excited by an Ar^ ion laser at wavelengths 514.5, 496.5, 488.0, 476.5,and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.     

溶剂热再结晶合成由纳米颗粒自组装成的一维CdS纳米棒

采用两种不同的溶剂热路径合成出了不同形貌和尺寸的CdS纳米晶, 一种是以无水乙二胺(en) 为溶剂, CdCl₂·2.5H₂O和硫脲(H₂NCSH₂N) 为镉源和硫源, 在不同反应温度(160 ℃-220 ℃ 下制备出了CdS纳米晶, 讨论温度对CdS纳米晶生长的影响; 另一种是以en为溶剂, 将在160 ℃下合成的产物在200 ℃下原位再结晶生长2-8 h, 分析原位生长时间对CdS纳米晶生长的影响. 通过X射线衍射(XRD)、 扫描电子电镜(SEM) 和透射电子电镜(TEM) 等表征产物的物相、 形貌和微结构, 分析可知: 两种路线合成的产物均为六方相CdS; 当温度为160 ℃时, 产物形貌为纳米颗粒状, 当温度高于160 ℃时, 产物为CdS纳米棒状; 同时, 在200 ℃下原位再结晶生长不同时间后发现产物形貌由纳米颗粒转变为纳米棒, 通过场发射扫描电镜(HRTEM) 分析可知: 纳米棒是由零维纳米颗粒自组装而成. 最后, 讨论了影响产物CdS纳米晶形貌转变的因素和纳米棒的生长机理.     

Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement

The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phonon--plasmon coupled (LOPC) modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2×10¹⁸ cm^-3 and 8×10¹⁸ cm^-3 with a carrier mobility of 30--55 cm²/(V·s) for n-type 4H-SiC substrates and 1×10¹⁶--3×10¹⁶ cm^-3 with mobility of 290--490 cm²/(V·s) for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1×10¹⁶ cm^-3 with mobility of 380 cm²/(V·s). It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers.