Diffusion of deuterium in GaAs from a molecular gas source

It is shown for the first time that deuterium can diffuse into GaAs from a gaseous source. Experiments performed at 500° C show two-component diffusion profiles with diffusion coefficients in the range 10^–15–4×10^-1cm²s^–1 depending on the conductivity type of the samples. These diffusion coefficients are considerably lower than those determined after RF plasma hydrogenation. Such a slow diffusion process is related to the reaction of molecular deuterium with the sample surface leading to the dissociation of the deuterium molecules.     

Mercury vapor transfer coefficients

Average effective electron-neutral diffusion coefficients are calculated for mercury vapor in the temperature range 3000–20,000°K. Electrical conductivity and electronic thermal conductivity of mercury plasma are determined over the pressure interval 0.00001–40 MPa in the second approximation of the Chapman-Enskog method.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 11–14, March, 1982.     

Interdiffusion studies in Bi-based layered systems with nanosecond laser pulses

Interdiffusion processes are induced by nanosecond laser pulses from an excimer laser. The Bi-based systems studied are formed by a Bi layer and a Sb or Ge layer. Configurations with Bi at the surface layer or at the innermost layer are both studied. Real-time reflectivity measurements are performed during the irradiation to determine the process kinetics and times and Rutherford backscattering spectrometry is used to obtain the concentration depth profiles. It will be shown that there is an interfacially initiated diffusion process in the Bi-Sb system and that the diffusion coefficients of this system within the liquid phase are in the 10^–5–10^–6 cm²/s range. The Bi-Ge system shows instead little mixing, the diffusion coefficients of the system within the liquid phase being at least two orders of magnitude lower. The differences observed when Bi is the surface layer or the innermost one are related to the different thermal responses of the system.     

Renormalized diffusion coefficients for electron-hole plasmas in crossed fields

The diffusion and drift of an excess plasma in a semiconductor is described with magnetohydrodynamic two-fluid equations including the fluctuating electric field produced by the equilibrium plasma in the sample. Using the weak coupling limit an equation of motion for the mean density of the excess plasma is established with renormalized drift and diffusion coefficients. With the aid of the fluctuation dissipation theorem these coefficients are expressed in terms of the dielectric function and discussed in detail for stable systems. The renormalized diffusion coefficient differs from the bare one by an additional term with thet ^–3/2-long time dependence. It is shown that this term in addition represents an anomalous diffusion rate proportionalB ^–1 which overweights the classical ambipolar diffusion for sufficiently strong fields, but decreases with increasing external electric field. The results are compared with experimental data.     

Investigation of Diffusion of Magnesium in Lithium Fluoride Crystals by the SIMS Method

Using secondary ion mass spectroscopy, diffusion of magnesium impurity in lithium fluoride is investigated. A temperature dependence of the magnesium diffusion coefficients within the temperature interval 870–1073 K is established, which is described by an expression of the following type: D = 2.8·10^–3·exp(–1.5/kT). Combining the data on self-diffusion of cations with the results of the ion conductivity measurements, estimation is made of the thermodynamic parameters characterizing the jump of a diffusant. The calculated frequencies of the impurity ion jump to the cation vacancy are reported.     

Investigation of the diffusion of phosphorus through a film of SiO2 by the radioactive tracer method

A solution of the diffusion equation in a double-layer system from a prompt source of diffusion is obtained, and a method is described for determining the fundamental parameters of the diffusion in a double-layer system by removing layers and measuring the overall activity of a fragment of the specimen. The diffusion of P³² at temperatures from 1100–1260°C is investigated in films of SiO₂ deposited on Si in a high-frequency electrodeless plasmotron. The diffusion coefficients in the film and the values of the segregation coefficient at the boundary of separation of the SiO₂-Si system are determined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 29–35, May, 1976.     

Diffusion coefficient of selenium in indium antimonide

The diffusion of selenium in indium antimonide has been studied in the temperature range 400–490°C, by the method of removing layers. Two regions have been distinguished in the donor distribution profiles. The first has a low diffusion coefficient and a high surface concentration, near to the limit of solubility of selenium (8·10¹⁸ cm^–3). In the second region, a much larger diffusion coefficient and a surface concentration lower by two orders of magnitude (8·10¹⁶ cm^–3) with weak temperature dependence are found. The temperature dependences of the diffusion coefficients of the first and second regions can be described by the expressions: D=4.8·10¹³ exp(–4.1 eV/kT) cm²/sec, D₂=1.9·10¹³ exp(–3.9 eV/kT) cm²/sec.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 40–43, November, 1991.     

Mutual diffusion in the titanium-vanadium-niobium system

Mutual diffusion is investigated in the Ti-V-Nb system at 1000 and 1200°C. A computation is performed by the Matano-Kirkaldy method for 89 points of an isothermal section at 1200°C and 101 points at 1000°C. Niobium was selected as solvent. It is found that the diagonal mutual diffusion coefficients grow by almost two orders as the composition approaches the titanium angle. Nondiagonal coefficients take on both positive and negative values.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 86–91, October, 1985.     

Annealing behaviour of implanted nitrogen in bulk and evaporated Ni

The diffusion coefficients of nitrogen in N-implanted polycrystalline Ni have been deduced. Both bulk and Ni-evaporated samples implanted with nitrogen were annealed at 150–500° C. The nitrogen profiles were probed using the nuclear resonance broadening technique. The value of 0.99±0.12 eV for the activation energy and (3.0 _–2.8 ⁺⁴⁰ )×10^–6 cm²/s for the frequency factor were obtained for implanted N in bulk Ni. The solubilities for both the bulk and evaporated Ni samples are given. In evaporated Ni nitrogen migration is enhanced due to the defects arising during evaporation.     

Diffusion of Au in amorphous Zr x Ni100−x alloys studied by Rutherford Backscattering Spectrometry

The diffusion coefficients (D) of Au in three binary amorphous Zr _x Ni_100–x (x=61, 65, and 67) alloys were measured in the temperature range 549–623 K using the technique of the Rutherford Backscattering Spectrometry (RBS). The D values were found to lie in the range 1.0×10^–21–9.0×10^–20 m²s^–1 for different alloys. The activation energy (Q) was calculated in each case on the basis of an observed Arrhenius temperature dependence of D. The activation energy was found to scale with the crystallization temperature (T _x) of the alloy. Other published measurements for Au diffusion in amorphous Zr-Ni alloys also appear to follow the scaling relation between Q and T _x.     

Superlinearity of current-voltage characteristics of oxidized cholesterol bilayer membranes

Current-voltage characteristics of bilayer oxidized cholesterol membranes were measured in 0·1 M KCl solution. The ohmic conductance was (5±3) × 10^–4–1 m^–2. To explain the superlinearity of the characteristics, a model of the ion transport through transient pores was used. Alternative diffusion barrier models could also explain the nonlinearity, but the distribution coefficients of permeable ions between the membrane hydrocarbon phase and the aqueous phase had to be taken unreasonably high.     

Hydrogen diffusion in titanium at room temperature

The diffusion of hydrogen in technically pure VT1-00 titanium is studied at room temperature under conditions of hydrogen penetration from a glow discharge plasma. Hydrogen penetration occurs under conditions of hydride phase growth. The diffusion coefficients of hydrogen in titanium at room temperature are estimated.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 43–47, March, 1982.     

Separation of variables in the diffusion equation. II

The covariant and symmetry properties of the linear diffusion equation having a scalar matrix of variable diffusion coefficients are studied. By means of differential symmetry operators of order no higher than two, a complete separation of variables is effected for the stationary and nonstationary cases.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 40–45, December, 1976.     

Molecular Dynamics of Biological Probes by Fluorescence Correlation Microscopy with Two-Photon Excitation

We report on the application of fluorescence correlation microscopy under two-photon excitation of fluorophores of biological interest: FITC–dextran (MW, from 20 to 150 kDa), green fluorescent protein (MW, 27 kDa), and fluorescein (MW, 330 Da). Under these experimental conditions, the translational diffusion coefficients of these molecules in aqueous solutions derived from the fluorescence intensity autocorrelation function were determined for the first time and were found to be 24 × 10^–7, 8.2 × 10^–7, and 3 × 10^–7 cm² s^–1 for 150-kDa FITC–dextran, green fluorescent protein, and fluorescein, respectively. These results are discussed in connection with previously reported results obtained by different methods. The great sensibility of the system has been applied to single-molecule detection of the smaller fluorophore, fluorescein.     

Separation of variables in the diffusion equation. I

For both stationary and nonstationary cases, all the coefficients of the linear diffusion equation with a constant diffusion tensor are enumerated for which total separation of the variables is possible by means of differential symmetry operators of a definite structure.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 46–53, November, 1976.     

Surface diffusion of potassium on theW (112) plane

Dependent on temperature and coverage, numerous spectral density functionsW(f) of the field-emission flicker noise of potassium adsorbed on the tungsten (112) plane were determined. The analysis in terms of the Timm and van der Ziel model gives surface diffusion energies between 0.55 and 0.83 eV for (average) coverages from 0.3 to 1.0 and diffusion coefficients between 2×10^–10 and 3×10^–9 cm²/s at 400 K. The results are compared with those obtained previously for the tungsten (111) region. Some conclusions as to the mechanism of diffusion and the manifestation of phase transitions between commensurate and incommensurate adlayer structures are discussed.On leave from Wrocaw University     

Transport Coefficients for Inelastic Maxwell Mixtures

The Boltzmann equation for inelastic Maxwell models (IMM) is used to determine the Navier–Stokes transport coefficients of a granular binary mixture in d-dimensions. The Chapman–Enskog method is applied to solve the Boltzmann equation for states near the (local) homogeneous cooling state. The mass, heat, and momentum fluxes are obtained to first order in the spatial gradients of the hydrodynamic fields, and the corresponding transport coefficients are identified. There are seven relevant transport coefficients: the mutual diffusion, the pressure diffusion, the thermal diffusion, the shear viscosity, the Dufour coefficient, the pressure energy coefficient, and the thermal conductivity. All these coefficients are exactly obtained in terms of the coefficients of restitution and the ratios of mass, concentration, and particle sizes. The results are compared with known transport coefficients of inelastic hard spheres (IHS) obtained analytically in the leading Sonine approximation and by means of Monte Carlo simulations. The comparison shows a reasonably good agreement between both interaction models for not too strong dissipation, especially in the case of the transport coefficients associated with the mass flux     

On an estimate of the piezoresistance coefficients in diffusion layers taking account of a two-dimensional impurity distribution

The influence of finite diffusion layer width on its piezoresistance coefficient is analyzed in this paper. It is shown that a diminution in the width results in growth of the absolute value and temperature dependence of the fundamental piezoresistance coefficients.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 42–46, September, 1977.     

Au diffusion in α-Ti

The solubility and diffusion of Au in -Ti have been studied in a 823–1023 K temperature range using the Rutherford backscattering technique. For this purpose we have implanted Au into -Ti samples. Our results show that the solubility of Au varies between 0.2 and 0.35 at.%. In addition, we found that the diffusion coefficients follow a normal Arrhenius behavior with Q=260 kJ/mol and D _o=1.9×10^–5 m²/s¹. These values are typical for a substitutional diffusion mechanism.     

Motion of solid-phase particles in the films formed by contact melting in three-component metal systems

The motion of the solid-phase particles under gravity is considered for the films formed by contact melting, with additional effects from the forces produced by motion of the crystallization front and those due to differences in the partial diffusion coefficients. Recommendations are made on selecting the contact-melting and crystallization conditions to reduce the effects of these forces. It is possible to reinforce the contact films on account of the displacement of the solidphase particles produced by the gravitational forces and the forces due to differences in the partial diffusion coefficients.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 79–83, January, 1984.