Low-temperature thermal conductivity of highly enriched and natural germanium

Experimental data on the thermal conductivity K(T) of crystals of natural and highly enriched germanium (99.99%) ⁷⁰Ge with lapped and polished surfaces are analyzed in the temperature range ∼1.5–8 K. In all the samples in the temperature range ∼1.5–4 K the standard boundary mechanism of scattering dominates. As the temperature is raised, an isotopic scattering mechanism is observed in the natural samples. In the highly enriched samples the theoretical values of K(T) turn out to be much smaller than the experimental ones. It is conjectured that a Poiseuille viscous flow regime of the phonon gas emerges in this case. Zh. éksp. Teor. Fiz. 114, 1757–1764 (November 1998)     

Thermal conductivity of crystalline fullerite C60 in the simple cubic phase

The behavior of the thermal conductivity k(T) of bulk faceted fullerite C₆₀ crystals is investigated at temperatures T=8–220 K. The samples are prepared by the gas-transport method from pure C₆₀, containing less than 0.01% impurities. It is found that as the temperature decreases, the thermal conductivity of the crystal increases, reaches a maximum at T=15–20 K, and drops by a factor of ∼2, proportional to the change in the specific heat, on cooling to 8 K. The effective phonon mean free path λ _p, estimated from the thermal conductivity and known from the published values of the specific heat of fullerite, is comparable to the lattice constant of the crystal λ _p∼d=1.4 nm at temperatures T>200 K and reaches values λ_p∼50d at T<15 K, i.e., the maximum phonon ranges are limited by scattering on defects in the volume of the sample in the simple cubic phase. In the range T=25−75 K the observed temperature dependence k(T) can be described by the expression k(T)∼exp(Θ/bT), characteristic for the behavior of the thermal conductivity of perfect nonconducting crystals at temperatures below the Debye temperature Θ (Θ=80 K in fullerite), where umklapp phonon-phonon scattering processes predominate in the volume of the sample. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 8, 651–656 (25 April 1997)     

Reduction in the rate of phonon scattering by a spatially correlated system of iron ions and low-temperature “anomaly” of the thermoelectric phenomena in HgSe:Fe crystals

A new effect of the reduction in the rate of phonon scattering by the spatially correlated system of iron ions in HgSe:Fe crystals is detected experimentally and calculated theoretically. The thermoelectric power is measured using HgSe:Fe samples with different iron content in the temperature range 7.5–60 K. It is found that the dependence of the thermoelectric power on iron content exhibits remarkable features at T<10 K: the quantity |α(N _Fe )| increases as the iron concentration increases to N _Fe =5×10¹⁸ cm⁻³, reaches a maximum at N _Fe ≈(1–2)×10¹⁹ cm⁻³, but then monotonically decreases with further increases in N _Fe . It is shown that the obseved increase in the thermoelectric power is due to a reduction in the rate of phonon scattering by the spatially correlated system of Fe³⁺ ions. This new effect is analyzed theoretically, and the theoretical results are compared with the experimental data. Zh. éksp. Teor. Fiz. 114, 191–207 (July 1998)     

Inelastic scattering of phonons by quadrupole defects with internal degrees of freedom

We solve the quantum mechanical problem of the inelastic scattering of phonons by a quadrupole defect in a crystal lattice for the case of solid parahydrogen whose matrix contains pair complexes of H₂ orthomolecules. By employing the pseudospin approximation for the operator of the energy of quadrupole-quadrupole interaction of the molecules in an orthopair we derive an effective Hamiltonian that describes the interaction of phonons with a pair quadrupole orthodefect in the lattice. We set up the scattering matrix and calculate the effective phonon relaxation time τ(ω, T) as a function of the frequency ω and the crystal temperature T. We also find that a pair quadrupole defect, which has a complicated system of levels, can be replaced by an effective two-level system with temperature-dependent parameters. The fact that a pair quadrupole orthocluster has internal degrees of freedom results in a resonant scattering peak near a certain critical temperature T ₀. Our estimates for H₂ yield T ₀≃ 6–7 K. Finally, we discuss the contribution of this mechanism to the low-temperature thermal conductivity of solid hydrogen. Zh. éksp. Teor. Fiz. 114, 555–569 (August 1998)     

Landau level quantization and possible superconducting instabilities in highly oriented pyrolitic graphite

Measurements of the basal-plane resistivity ρ _a(T,H) performed on highly oriented pyrolitic graphite, with magnetic field H∥c-axis in the temperature interval 2–300K and fields up to 8 T, provide evidence for the occurrence of both field-induced and zero-field superconducting instabilities. Additionally, magnetization M(T,H) measurements suggest the occurrence of Fermi surface instabilities which compete with the superconducting correlations. Fiz. Tverd. Tela (St. Petersburg) 41, 2135–2138 (December 1999)     

Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K

The temperature dependence of the energy relaxation time τ_e (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τ_e, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ _e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τ_LOτ4.5 ps). The energy losses calculated from the τ_e data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 5, 371–375 (10 September 1996)     

Magnetic and thermal properties of CuFeS<Subscript>2</Subscript> at low temperatures

The magnetic moment M, the magnetic susceptibility χ, and the thermal conductivity of chalcopyrite CuFeS₂, which is a zero-gap semiconductor with antiferromagnetic ordering, have been measured in the temperature range 10–310 K. It has been revealed that the quantities χ(T) and M(T) increase anomalously strongly at temperatures below ∼100 K. The temperature dependence M(T) is affected by the magnetic prehistory of the sample. An analysis has demonstrated that the magnetic anomalies are associated with the presence of a system of noninteracting magnetic clusters in the CuFeS₂ sample under investigation. The formation of the clusters is most likely caused by the disturbance of the ordered arrangement of Fe and Cu atoms in the metal sublattice of the chalcopyrite, which is also responsible for the phase inhomogeneity of the crystal lattice. The inhomogeneity brings about strong phonon scattering, and, as a result, the temperature dependence of the thermal conductivity coefficient exhibits a behavior characteristic of partially disordered crystals.     

Thermal conductivity of high-porosity biocarbon preforms of beech wood

This paper reports on measurements performed in the temperature range 5–300 K for the thermal conductivity κ and electrical resistivity ρ of high-porosity (cellular pores) biocarbon preforms prepared by pyrolysis (carbonization) of beech wood in an argon flow at carbonization temperatures of 1000 and 2400°C. X-ray structure analysis of the samples has been performed at 300 K. The samples have revealed the presence of nanocrystallites making up the carbon matrices of these biocarbon preforms. Their size has been determined. For samples prepared at T _carb = 1000 and 2400°C, the nanocrystallite sizes are found to be in the ranges 12–25 and 28–60 κ(T) are determined for the samples cut along and across the tree growth direction. The thermal conductivity κ increases with increasing carbonization temperature and nanocrystallite size in the carbon matrix of the sample. Thermal conductivity measurements conducted on samples of both types have revealed an unusual temperature dependence of the phonon thermal conductivity for amorphous materials. As the temperature increases from 5 to 300 K, it first increases in proportion to T, to transfer subsequently to ∼T ^1.5 scaling. The results obtained are analyzed.     

Effect of regimes of cooling in a magnetic field on the magnetization of a La0.9Sr0.1MnO3 single crystal

Magnetization measurements were performed on a lanthanum manganite La_0.9Sr_0.1MnO₃ single crystal in the temperature interval 4.2–300 K and magnetic field interval 50 Oe-55 kOe in two sample cooling regimes: 1) cooling down to 4.2 K in a high (55 kOe) magnetic field, and 2) cooling in a “zero” field. It is shown that the temperature dependences of the magnetization M(T) are substantially different in these regimes. Pronounced anomalies of M(T) were observed at temperatures T*=103 K and T _c =145 K. The first anomaly is attributed to a structural transition, while the second one corresponds to a ferromagnet-paramagnet phase transition. The magnetization of a La_0.9Sr_0.1MnO₃ single crystal in the cooling regimes studied shows typical “spin-glass” behavior. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 39–43 (10 July 1998)     

Low temperature dependence of the penetration depth in YBCO thin films revisited by mm wave transmission and surface impedance measurements

We report results obtained with two different experimental set-ups in state-of-the-art YBCO thin films as similar as possible, prepared by pulsed laser deposition on LaAlO₃ substrates: a surface impedance measurement on 4000 ? thick films using a parallel plate resonator (10 GHz), and a far infrared transmission (100-400 GHz) measurement which requires thinner (1000 ?) samples. The former measurement yields the temperature variation of the penetration depth λ(T) and the real part of the conductivity, provided the absolute value of λ(T) is known. The latter yields the imaginary part of the conductivity, hence the absolute value of the penetration depth, as well as its temperature dependence at the measuring frequency. Combining these two experiments, we establish a quasi-linear temperature variation of λ(T), with a 2 ? K^-1 low temperature slope, and a fairly large zero temperature value λ(T = 0)=(1800±200) ? . The scattering rate of the quasi-particles calculated from a two-fluids model shows that the films compare to good quality single crystals, where twice a larger slope has been found. This surprising behavior is described in detail, including an in-depth structural analysis of the samples in order to evaluate their similarities. We find that the 10 GHz data obtained in the thickest films can be fitted to the dirty d-wave mode in the unitarity limit, with an extrapolated slope of 3 ? K^-1, but yield a scattering rate that is difficult to reconcile with the high T _c (92 K) of the films. Received 7 May 2001 and Received in final form 18 October 2001     

One-dimensional localization in porous a-Si1−c Mnc

The temperature dependence of the conductance of porous silicon doped with manganese up to densities corresponding to the metallic side of the Anderson transition is investigated. It is found that in the temperature range below T=40–60 K the conductance decreases with T as G(T)∝T ^−1/3. This behavior corresponds to one-dimensional electron localization in silicon wires under conditions of inelastic electron-electron collisions with a small energy transfer. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 4, 265–269 (25 February 1998)     

Geometric Quantization¶and the Generalized Segal--Bargmann Transform¶for Lie Groups of Compact Type

Let K be a connected Lie group of compact type and let T ^*(K) be its cotangent bundle. This paper considers geometric quantization of T ^*(K), first using the vertical polarization and then using a natural K?hler polarization obtained by identifying T ^*(K) with the complexified group K _ℂ. The first main result is that the Hilbert space obtained by using the K?hler polarization is naturally identifiable with the generalized Segal–Bargmann space introduced by the author from a different point of view, namely that of heat kernels. The second main result is that the pairing map of geometric quantization coincides with the generalized Segal–Bargmann transform introduced by the author. This means that the pairing map, in this case, is a constant multiple of a unitary map. For both results it is essential that the half-form correction be included when using the K?hler polarization. These results should be understood in the context of results of K. Wren and of the author with B. Driver concerning the quantization of (1+1)-dimensional Yang–Mills theory. Together with those results the present paper may be seen as an instance of “quantization commuting with reduction”. Received: 28 June 2001 / Accepted: 17 September 2001     

Thermopower in quasi-two-dimensional (BEDT-TTF) m X n organic conductors

Thermopower of (BEDT-TTF) _m X _n organic conductors has been studied using a dedicated measurement technique in the temperature range of 4.2 to 300 K. It turned out that some features of the thermopower in quasi-two-dimensional metals, namely the presence of a peak in the thermopower of α-(BEDT-TTF)₂MHg(SCN)₄ and a plateau in κ-(BEDT-TTF)₂Cu(NCS)₂ in the temperature interval between 10 and 50 K, are probably due to the phonon drag effect. Similar temperature dependences of the Seebeck coefficient can be satisfactorily interpreted in terms of a simple model taking into account the real experimental curve of the phonon heat capacity versus temperature, C ∝ T ², which is not described by the Debye formula. One feature distinguishing organic superconductors from magnetically ordered metals is a stronger temperature dependence of the characteristic electron-phonon scattering time τ _e-ph(T). Phonon drag effects also determine the behavior of the thermopower in the (BEDT-TTF)₃Cl₂·2H₂O organic conductor, which is characterized by a metal-insulator transition at T∼150 K. An analysis of measurements of the conductivity and thermopower vs. temperature taken together indicates that the transition in this compound has a complex nature: first (at T∼150 K) a metal-insulator transition occurs, which produces an energy gap in the band spectrum, then at a lower temperature (T∼20 K) a transition to a charge-density wave state takes place. Zh. éksp. Teor. Fiz. 113, 323–338 (January 1998)     

Behavior of sound velocities in the compounds La1−x SrxMnO3 near magnetic and structural phase transitions

The temperature dependences of the transverse V _t and longitudinal V _l sound velocities in single crystals of the perovskites La_1−x Sr_xMnO₃ (x=0.1, 0.175, 0.2, 0.25) in the temperature interval T=70–350 K are investigated by the resonance method. Anomalies — small minima and kinks in the temperature dependences V _l (T) and V _t (T) — are observed at the Curie points. A strong jumplike increase (by up to 30%) in both the longitudinal and transverse sound velocities, which attests to sizable hardening of the acoustic branches of the phonon spectrum, is observed near the temperatures of the structural transitions between the rhombohedral and orthorhombic phases (for x=0.175, 0.2, 0.25) and at the phase transition to the polaron-ordered state (for x=0.1). Pis’ma Zh. éksp. Teor. Fiz. 68, No. 2, 141–146 (25 July 1998)     

Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method

The electrical conduction mechanisms in various highly resistive GaN layers of Al _x Ga_1−x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities of the bulk GaN layers are extracted from Hall measurements with implementing simple parallel conduction extraction method (SPCEM). It is observed that the resistivity (ρ) increases with decreasing carrier density in the insulating side of the metal–insulator transition for highly resistive GaN layers. Then the conduction mechanism of highly resistive GaN layers changes from an activated conduction to variable range hopping conduction (VRH). In the studied temperature range, ln (ρ) is proportional to T ^−1/4 for the insulating sample and proportional to T ^−1/2 for the more highly insulating sample, indicating that the transport mechanism is due to VRH.     

Propagation of nonequilibrium phonons in ferroelectric ceramics and single crystals

Phonon transport in ferroelectric ceramics and single crystals has been experimentally investigated. Our measurements indicate that, in the temperature range 1.7–3.8 K studied, the effective phonon diffusion coefficient behaves as D _eff∞T ⁻⁵ in ferroelectrics with a broadened phase transition. This experimental dependence is in accord with the presence of a plateau in the thermal conductivity of such materials. The scattering by domain walls in BaTiO₃ single crystals has been identified, and our results are in quantitative agreement with calculations. Zh. éksp. Teor. Fiz. 115, 624–631 (February 1999)     

Femtosecond energy relaxation in suspended graphene: phonon-assisted spreading of quasiparticle distribution

Ultra-fast optical measurements of few-layer suspended graphene films grown by chemical vapor deposition were performed with femtosecond pump–probe spectroscopy. The relaxation processes were monitored in transient differential transmission (ΔT/T) after excitation at two different wavelengths of 350 and 680 nm. Intraband electron–electron scattering, electron–phonon scattering, interband Auger recombination and impact ionization were considered to contribute to ΔT/T. All these processes may play important roles in spreading the quasiparticle distribution in time scales up to 100 fs. Optical phonon emission and absorption by highly excited non-equilibrium electrons were identified from ΔT/T peaks in the wide spectral range. When the probe energy region was far from the pump energy, the energy dependence of the quasiparticle decay rate was found to be linear. Longer lifetimes were observed when the quasiparticle population was localized due to optical phonon emission or absorption.     

Dielectric permittivity and phase transitions in the SrTiO3-KTaO3 system

The dielectric permittivity and losses of the (SrTiO₃)_0.85(KTaO₃)_0.15 solid solution have revealed an unusual behavior at temperatures of 5–300 K and frequencies ranging from 100 Hz to 1 MHz. The dielectric permittivity exhibits a broad maximum at ≈40 K, which obeys the Curie-Weiss law in the high-temperature wing, and the onset of low-temperature relaxation contributions. Besides, while for T>40 K it is a fully ergodic, uniformly ordering system, the uniform polar ordering is replaced with decreasing temperature by two low-temperature phase transitions to a glass-like state. The proposed mechanism for the dielectric relaxation and the observed phase transformations involves reorientation and ordering in the system of electron and hole polarons, which form in the course of charge compensation of the heterovalent ions Sr²⁺, K⁺ and Ti⁴⁺, Ta⁵⁺ distributed randomly in the sublattices. Fiz. Tverd. Tela (St. Petersburg) 39, 2040–2045 (November 1997)     

Raman scattering in germanium at high pressure: Isotope effects

The first-order Raman scattering in isotopically enriched samples of germanium ⁷⁰Ge, ⁷²Ge, and ⁷⁴Ge and germanium with the natural isotopic composition is investigated at high pressures. It is found that the isotopic dependence of the frequency of the LTO(Γ) mode in isotopically pure germanium samples can be described in the harmonic approximation (ν∝m ^−1/2). At the same time, the frequency of the LTO(Γ) mode of germanium of natural isotopic composition apparently contains a contribution due to isotopic disorder effects. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 3, 211–214 (10 February 1999)     

Peculiarities of crystal field effects in CeInCu2 based heavy-fermion compounds

We have studied the evolution of the inelastic neutron magnetic scattering spectra of a compound with cubic symmetry, CeInCu₂, in the temperature range 10–130 K, and also their transformation with variation of the Kondo temperature T _K due to substitution of cerium ions in the system Ce_1−x (La,Y)_xInCu₂ at T=10 K. It turns out that the energy of the transition between the ground state and excited state of the 4 f electrons (Δ_CF) in the crystal electric field in CeInCu₂ increases with growth of the population of the ground state as the temperature is reduced, with a slight change in its intensity. Such behavior is inconsistent with the notion of classical one-ion effects of the crystal electric field. We have found that the scale of the observed variations in the excitation spectra of the 4f electrons depends on the Kondo temperature T _K and is insensitive to disorder in the rare-earth sublattice. Thus, despite the fact that T _K ≪Δ_CF, hybridization with states in the conduction band has a substantial effect on all parameters of the excitation spectrum of the ground multiplet of the 4f electrons at low temperatures. Zh. éksp. Teor. Fiz. 115, 2197–2206 (June 1999) A. A. Baikov Institute of Metallurgy