Non-isothermal crystallization kinetics of La2CaB10O19 from glass

The non-isothermal crystallization kinetics of La₂CaB₁₀O₁₉ (LCB) from a La₂O₃-CaO-B₂O₃ glass was studied. Differential thermal analysis methods were performed on three glass powders to obtain the kinetic parameters of LCB crystallization mechanism. The activation energies for overall crystallization (E), obtained by the methods of Kissinger and Ozawa, were in the range of 479-569 kJ/mol. Multiple (five) analysis methods were used to estimate the Avrami exponent (n), which could consequently be reduced into the single value of n = 3.1 ± 0.3. The growth morphology index (m) of LCB was corroborated by microscopy (optical and electron) images, which revealed a three dimensional growth. Energy dispersive spectroscopy confirmed that LCB is the crystallizing phase from the glass by an interface controlled mechanism. The parameters of the Johnson-Mehl-Avrami kinetic model for the analysis of LCB crystallization from glass were found to be n = m = 3.     

Structural transformation on Se0.8Te0.2 chalcogenide glass

Using X-ray diffraction and differential scanning calorimetry (DSC), the structure and the crystallization mechanism of Se_0.8Te_0.2 chalcogenide glass has been studied. The structure of the crystalline phase has been refined using the Rietveld technique. The crystal structure is hexagonal with lattice parameter a = 0.443 nm and c = 0.511 nm. The average crystallite size obtained using Scherrer equation is equal 16.2 nm, so it lies in the nano-range. From the radial distribution function, the short range order (SRO) of the amorphous phase has been discussed. The structure unit of the SRO is regular tetrahedron with (r₂/r₁) = 1.61. The Se_0.8Te_0.2 glassy sample obeys the chemical order network model, CONM. Some amorphous structural parameters have been deduced. The crystallization mechanism of the amorphous phase is one-dimensional growth. The calculated value of the glass transition activation energy (E_g) and the crystallization activation energy (E_c) are 159.8 ± 0.3 and 104.3 ± 0.51 kJ/mol, respectively.     

Far-infrared transmission and bonding arrangement in Ge10Se90−xTex semiconducting glassy alloys

The far-infrared spectra of Ge₁₀Se_90−xTe_x where x = 0, 10, 20, 30, 40, 50 glassy alloys were measured in the wavenumber region 50-650 cm⁻¹ at room temperature. The results were explained in terms of the vibrations of the isolated molecular units. The addition of Te in Ge₁₀Se₉₀ has shown the appearance of GeTe₂ and GeTe₄ molecular units and vibrations of Se-Te bond as Se_8−xTe_x mixed rings. The assignment of various absorption bands has been made on the basis of absorption spectra of pure Se, binary Ge-Se, Ge-Te, Se-Te and ternary Ge-Se-Te glassy alloys. The far-infrared transmission spectrum has been found to shift a little towards lower wavenumber side with the addition of Te content to Ge₁₀Se₉₀. The addition of Te to Ge-Se system replacing Se has found to reduce the Se-Se bonds and Ge-Se bonds and leads to the formation of Se-Te, Ge-Te and Te-Te bonds.     

An investigation of the kinetic transformation mechanism of Ge12.5Te87.5 chalcogenide glass under non-isothermal regime

Differential scanning calorimetry (DSC) technique was used to study the kinetics of amorphous to crystalline transformation in Ge_12.5Te_87.5 chalcogenide glass. The kinetic parameters of glassy Ge_12.5Te_87.5 under non-isothermal conditions are analyzed by the model-free and model-fitting approaches from a series of experiments at different constant heating rates (5-50 K/min). The effective activation energy of crystallization was determined by analyzing the data using the isoconversional methods of Kissinger-Akahira-Sunose (KAS), Tang, Starink, Flynn-Wall-Ozawa (FWO) and Vyazovkin. The analysis of the present data shows that the effective activation energy of crystallization is constant throughout the entire interval of conversions and hence with temperature. The transformation mechanism examined using the local Avrami exponents indicates that one mechanism (three-dimensional growth) is responsible for the transformation process for all heating rates used. The reaction model that may describe the transformation process of the Ge_12.5Te_87.5 chalcogenide glass is the Avrami-Erofeev model (g(α) = [− ln(1 − α)]^1/n) with n = 3 for all heating range at the whole range of crystallized fraction (α = 0.05-0.95). A good agreement between the experimental and the reconstructed (α-T) curves has been achieved. The transformation from amorphous to crystalline phase in Ge_12.5Te_87.5 chalcogenide glass demonstrates a single-step mechanism.     

Structural characterization and phase transformation kinetics of Se58Ge42−xPbx (x = 9, 12) chalcogenide glasses

The glass transition behavior and crystallization kinetics of Se₅₈Ge_42?xPb_x (x = 9, 12) have been investigated using Differential Scanning Calorimetry (DSC) at five different heating rates under non-isothermal conditions. It has been observed that these glassy systems exhibit single glass transition and double crystallization on heating. The XRD pattern revealed that the considered glasses get crystallized into GeSe₂ and PbSe/Se phases after annealing at 633–643 K for 2 h. The GeSe₂ and Se phases were found to crystallize in monoclinic structure while, PbSe phase crystallizes in cubic structure. Besides this, a mixed phase was also observed in DSC thermograms after annealing. The kinetic studies include determination of various parameters such as Avrami exponent (n), frequency factor (K_o), dimensionality of growth (m), the activation energy for glass transition (E_t) and for crystallization (E_c). The values of E_t increases while that of E_c decreases after annealing. Also, dimensionality of growth decreases to one dimension from two and three dimensions after annealing.     

Isochronal crystallization kinetics of Cu60Zr20Ti20 bulk metallic glass

Isochronal crystallization kinetics of Cu₆₀Zr₂₀Ti₂₀ bulk metallic glass has been investigated by differential scanning calorimetry. By means of the Kissinger, Ozawa, Kempen, Matusita and Gao methods, average effective activation energies for the first and second crystallization reactions in Cu₆₀Zr₂₀Ti₂₀ are calculated to be about 375 ± 9 and 312 ± 11 kJ mol⁻¹, respectively, which are smaller than the values deduced from isothermal experiments. Meanwhile, average Avrami exponents, 3.0 ± 0.1 and 3.4 ± 0.2, for two crystallization reactions in isochronal anneals, differ from the value about 2.0 in isothermal anneals. The nonidentity of the Avrami exponents and effective activation energies may be contributed to different crystallization mechanisms and the nature of non-isokinetic between isochronal and isothermal experiments. The values of frequency factor k₀ for the first and second crystallization reactions of Cu₆₀Zr₂₀Ti₂₀ are (1.7 ± 0.3) × 10²⁴ and (7.0 ± 0.8) × 10¹⁸ s⁻¹, respectively, and the large value of k₀ has been discussed in terms of the atomic configuration and interaction.     

High field electrical switching behavior of Ge10Se90−xTlx glasses

Electrical switching studies on bulk Ge₁₀Se_90−xTl_x (15 ? x ? 34) glasses have been undertaken to examine the type of switching, composition and thickness dependence of switching voltages. Unlike Ge-Se-Tl thin films which exhibit memory switching, the bulk Ge₁₀Se_90−xTl_x glasses are found to exhibit threshold type switching with fluctuations seen in their current-voltage (I-V) characteristics. Further, it is observed that the switching voltages (V_T) of Ge₁₀Se_90−xTl_x glasses decrease with the increase in the Tl concentration. An effort has been made to understand the observed composition dependence on the basis of nature of bonding of Tl atoms and a decrease in the chemical disorder with composition. In addition, the network connectivity and metallicity factors also contribute for the observed decrease in the switching voltages of Ge₁₀Se_90−xTl_x glasses with Tl addition. It is also interesting to note that the composition dependence of switching voltages of Ge₁₀Se_90−xTl_x glasses exhibit a small cusp around the composition x = 22, which is understood on the basis of a thermally reversing window in this system in the composition range 22 ? x ? 30. The thickness dependence of switching voltages has been found to provide an insight about the type of switching mechanism involved in these samples.     

Thermal conductivity and specific heat of bulk amorphous chalcogenides Ge20Te80−xSex (x = 0,1,2,8)

Bulk amorphous chalcogenide samples of Ge₂₀Te_80−xSe_x (x = 0, 1, 2, 8) have been prepared using a melting-quench method, and characterized by the differential scanning calorimetry, X-ray powder diffraction, high-resolution transmission electron microscopy, specific heat and thermal conductivity measurements. The low temperature specific heat measurements identified some localized low-frequency oscillation modes (Einstein modes) in conjunction with a Debye-like behavior. It was found that with increasing Se concentration the characteristic Debye temperature did not change whereas the Einstein temperature slightly decreased. The lattice thermal conductivity of all Ge₂₀Te_80−xSe_x samples exhibited typical amorphous heat conduction behavior, which has been discussed in connection with the phonon mean free path and in the context of a phenomenological model of heat conduction for highly disordered system.     

Crystallization and glass transition kinetics in Cu ion substituted Cux-Ag1 − xI-Ag2O-V2O5 superionic glasses

Crystallization kinetics and thermal properties in superionic glasses Cu_xAg_1 − xI-Ag₂O-V₂O₅ for x = 0.1-0.3 have been thoroughly investigated. X-ray diffraction and differential scanning calorimetry measurements confirm the precipitation of at least three compounds during crystallization, viz. AgI, Ag₄V₂O₇ and Ag₈I₄V₂O₇. The activation energies for structural relaxation (E_s) and crystallization (E_c) obtained using Moynihan and Kissinger formulation exhibit interesting trends with CuI substitution. The E_s value decreases with CuI substitution in the system. Further, the E_c values corresponding to precipitation of Ag₄V₂O₇ and Ag₈I₄V₂O₇ exhibit increasing trend, whereas, for that of AgI precipitation a decreasing trend with CuI content. The Avrami parameter calculated from Augis-Bennett method and Ozawa equation suggests predominantly surface crystallization in the glassy system. The electrical conductivity-temperature (σ-T) cycles interestingly demonstrate increasing precipitation of AgI with CuI content in the glass matrix.     

Crystallization behavior of (GeS2)0.1(Sb2S3)0.9 glass

The crystal growth kinetics of antimony trisulfide in (GeS₂)_0.1(Sb₂S₃)_0.9 glass has been studied by microscopy and DSC. The linear crystal growth kinetics has been confirmed in the temperature range 492 ? T ? 515 K (E_G = 405 ± 7 kJ mol⁻¹). The applicability of standard growth models has been assessed. From the crystal growth rate corrected for viscosity plotted as a function of undercooling it has been found that the most probable mechanism is interface controlled 2D nucleated growth. The non-isothermal DSC data, corresponding to the bulk sample, can be described by the Johnson-Mehl-Avrami equation.     

Crystallization kinetics in Cu46Zr45Al7Y2 bulk metallic glass by differential scanning calorimetry (DSC)

Crystallization transformation kinetics in isothermal and non-isothermal (continuous heating) modes were investigated in Cu₄₆Zr₄₅Al₇Y₂ bulk metallic glass by differential scanning calorimetry (DSC). In isochronal heating process, activation energy for crystallization at different crystallized volume fraction is analyzed by Kissinger method. Average value for crystallization in Cu₄₆Zr₄₅Al₇Y₂ bulk metallic glass is 361 kJ/mol in isochronal process. Isothermal transformation kinetics was described by the Johnson-Mehl-Avrami (JMA) model. Avrami exponent n ranges from 2.4 to 2.8. The average value, around 2.5, indicates that crystallization mechanism is mainly three-dimensional diffusion-controlled. Activation energy is 484 kJ/mol in isothermal transformation for Cu₄₆Zr₄₅Al₇Y₂ bulk metallic glass. These different results were discussed using kinetic models. In addition, average activation energy of Cu₄₆Zr₄₅Al₇Y₂ bulk metallic glass calculated using Arrhenius equation is larger than the value calculated by the Kissinger method in non-isothermal conditions. The reason lies in the nucleation determinant in the non-isothermal mode, since crystallization begins at low temperature. Moreover, both nucleation and growth are involved with the same significance during isothermal crystallization. Therefore, the energy barrier in isothermal annealing mode is higher than that of isochronal conditions.     

Non-isothermal crystallization kinetics study on new amorphous Ga20Sb5S75 and Ga20Sb40S40 chalcogenide glasses

Bulk glasses of the system Ga₂₀Sb_xS_80−x (x = 5 and 40) were prepared for the first time by the known melt quenching technique. Non-isothermal differential scanning calorimetric (DSC) measurements of as-quenched Ga₂₀Sb_xS_80−x (x = 5 and 40) chalcogenide glasses reveal that the characteristic temperatures e.g. the glass transition temperature (T_g), the temperature corresponding to the maximum crystallization rate (T_p) recorded in the temperature range 400-650 K for x = 5 and 480-660 K for x = 40 are strongly dependent on heating rate and Sb content. Upon heating, these glasses show a single glass transition temperature (T_g) and double crystallization temperatures (T_p1 and T_p2) for x = 5 which overlapped and appear as a single crystallization peak (T_p) for x = 40. The activation energies of crystallization E_c were evaluated by three different methods. The crystallization data were examined in terms of recent analysis developed for non-isothermal conditions. The crystalline phases resulting from (DSC) have been identified using X-ray diffraction.     

Crystallization kinetics of Fe73.5−xMnxCu1Nb3Si13.5B9 (x = 0, 1, 3, 5, 7) amorphous alloys

In this study, we have investigated the effect of substituting Mn for Fe on the crystallization kinetics of amorphous Fe_73.5−xMn_xCu₁Nb₃Si_13.5B₉ (x = 1, 3, 5, 7) alloys. The samples were annealed at 550 °C and 600 °C for 1 h under an argon atmosphere. The X-ray diffraction analyses showed only a crystalline peak belonging to the α-Fe(Si) phase, with the grain size ranging from 12.2 nm for x = 0 to 16.7 nm for x = 7. The activation energies of the alloys were calculated using Kissinger, Ozawa and Augis-Bennett models based on differential thermal analysis data. The Avrami exponent n was calculated from the Johnson-Mehl-Avrami equation. The activation energy increased up to x = 3, then decreased with increasing Mn content. The values of the Avrami exponent showed that the crystallization is typical diffusion-controlled three-dimensional growth at a constant nucleation rate.     

Crystallization kinetics of the tungsten-tellurite glasses

The crystallization kinetics of the (1 − x)TeO₂-xWO₃ (where x = 0.10, 0.15, and 0.20, in molar ratio) glass system was studied by non-isothermal methods using differential scanning calorimetry (DSC), X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. DSC measurements were performed at different heating rates to study crystallization kinetics of the first crystallization reactions of the glasses. XRD analysis of tungsten-tellurite glasses heat-treated above the first crystallization temperatures revealed that the first crystallization peaks attributed to the α-TeO₂ and γ-TeO₂ crystalline phases for 0.90TeO₂-0.10WO₃ and 0.85TeO₂-0.15WO₃ samples and α-TeO₂ and WO₃ crystalline phases for the 0.80TeO₂-0.20WO₃ sample. Avrami constants, n, calculated from Ozawa equation, were found between 1.14 and 1.44. The activation energies, E_A, for the first crystallization reactions were determined by using the modified Kissinger equation as 379 kJ/mol, 288.1 kJ/mol and 228.8 kJ/mol, for 0.90TeO₂-0.10WO₃, 0.85TeO₂-0.15WO₃ and 0.80TeO₂-0.20WO₃ glasses, respectively.     

Pb implanted SiO2 probed by soft x-ray emission and absorption spectroscopy

The results of soft-x-ray O Kα emission (XES) and O 1s absorption spectroscopy (XAS) measurements of Pb-implanted glassy and crystalline silica are presented. The x-ray O Kα (2p → 1s electron transition) emission spectra of SiO₂ were recorded before and after Pb-implantation with the energy of 30 keV and ion fluence 5 × 10¹⁶ ion/cm². It was found that XES O Kα of implanted samples is sensitive to the disordering degree of the oxygen sublattice. The transformations and peculiarities of the spectra shape of implanted samples are explained by the disordering and amorphization effects in the structure of Pb-implanted SiO₂. Comparing the XES O Kα of reference a-SiO₂, Pb-implanted SiO₂ and binary glassy PbO-SiO₂ system_, it was established that the ion-beam treatment of oxide matrix does not generate an oxidized Pb as PbO₄-type structural units. The energy band gap of 9.2 eV well coincides with previously reported data and was evaluated qualitatively with the help of overlaying the XES O Kα and XAS O 1s to the common energy scale for Pb-implanted SiO₂ and binary glassy PbO-SiO₂.     

Optical properties and structure of thin films from the system GeSe2-Sb2Se3-AgI

Chalcohalide glasses from the GeSe₂-Sb₂Se₃-AgI system were synthesized by taking preliminary prepared GeSe₂, Sb₂Se₃ and AgI in their molecular percentages and melting them in an evacuated quartz ampoule. Thin films from the above system were deposited using vacuum thermal evaporation at different conditions on optical glass substrates BK-7. Using X-ray microanalysis it was found that the film composition differs in a certain degree from the bulk composition. Optical transmission and reflection measurements were carried out in the spectral range 400-2500 nm. The optical constants of films thicker than 400 nm (refractive index, n, and absorption coefficient, k) and the film thickness (d) were calculated using a method developed by Konstantinov. The values of n change from 2.38 for thin GeSe₂ films up to 3.48 for thin Sb₂Se₃ films while the optical band gap decreased from 1.92 eV to 1.29 eV, respectively. After exposure to light the photo-induced changes in the optical parameters were negligible for GeSe₂ and Sb₂Se₃ films and increase for some of the ternary samples. Using IR spectroscopy some conclusions about changes in the film structure were drawn.     

Crystallization behavior and microstructure of powdered and bulk ZnO-Al2O3-SiO2 glass-ceramics

The crystallization behavior of glass with the composition: 55.6 mol% SiO₂, 22.8 mol% Al₂O₃, 17.7 mol% ZnO and 3.84 mol% of TiO₂ as nucleating agent and with different particle sizes has been studied by differential scanning calorimetry (DSC), X-ray diffraction (XRD) and tranmission electron microscopy (TEM). In glass powders two crystalline phases: zinc-aluminosilicate s.s. with high-quartz structure, Zn_x/2Al_xSi_3−xO₆, (x varies dependent on heat-treatment temperature) and gahnite are formed. The ratio of these phases depends on particle sizes. In bulk glass, however, gahnite is the sole crystalline phase. The composition of initially formed zinc-aluminosilicate s.s. was determined by Rietveld refinement of XRD patterns to be Zn_0.69Al_1.38Si_1.62O₆. With temperature increase, the amount of zinc-aluminosilicate s.s decreased with simultaneous reduce of zinc and aluminum incorporated in the structure. Eventually at 1423 K almost pure high-quartz structure was formed. The activation energies of zinc-aluminosilicate s.s. and gahnite crystallization were determined by non-isothermal method to be 510 ± 18 and 344 ± 17 kJ mol⁻¹, respectively. The latter value matches well with those cited in literature for crystal growth of gahnite in similar glasses. That is attributed to the fact that the high-quartz structure acts as a precursor for gahnite crystallization.     

Crystal/glass phase change in K1−xRbxSb5S8 (x = 0.25, 0.50, 0.75) studied through thermal analysis techniques

K_1−xRb_xSb₅S₈ (x = 0.25, 0.5, 0.75) is a well-defined single-phase system that undergoes a reversible phase-change. We determined the activation energy of glass transition and crystallization, respectively, for the three compositions using the Kissinger and Ozawa-Flynn-Wall equations. The results have shown that for K_0.25Rb_0.75Sb₅S₈ the crystallization mechanism could be interpreted in terms of a single-step reaction. For the other two compositions the glass-to-crystal transformation is a process of increasing mechanistic complexity with time and it involves simultaneously several different nucleation and growth events. The slope of the lines in the Avrami plots was observed to be independent of heating rate for K_0.25Rb_0.75Sb₅S₈ and the mean value of the activation energy was found to be 262 ± 6 kJ/mol. For the other two compositions, the slope varies with the heating rate. In the K_0.25Rb_0.75Sb₅S₈ glasses, bulk nucleation with three-dimensional crystal growth appears to dominate the phase-change process.     

Disorder in LixFePO4: From glasses to nanocrystallites

Li_xFePO₄ glasses have been prepared by fast-quenching method in the whole range of composition 0 ? x ? 1. The amorphous state of glassy materials is confirmed by X-ray diffraction. Information concerning the local environment of Li and Fe cations and the configuration of (PO₄)³⁻ oxo-anions is obtained by Fourier transform infrared (FTIR) spectroscopy. While the LiFePO₄ crystalline materials undergo a transition from the paramagnetic to the antiferromagnetic ordering at 52 K, no magnetic ordering is observed in the vitreous samples that realize random field systems, so that a spin glass-like freezing is observed at low temperature. The paramagnetic Curie temperature of Li_xFePO₄ is independent of x and shifted to θ = −60 K in the glassy state, due to a significant distortion of the FeO₆ octahedra that alters the superexchange path inside the atomic FeO₄ layers of the crystallized structure. On another hand, the PO₄ tetrahedra are not significantly distorted in the glassy phase. The results are compared with highly disordered, but nanocrystallized LiFePO₄ recently obtained at the early stage of synthesis by solid state reaction at 300 °C. In this latter case, the lack of long-range antiferromagnetic ordering is due to substitutional disorder among the cationic sublattice.