近邻层对相邻层界面能的影响（英文）

本文采用密度泛函理论比较了三层异质结(石墨烯/石墨烯/石墨烯,石墨烯/石墨烯/氮化硼和氮化硼/石墨烯/氮化硼)和双层异质结(石墨烯/石墨烯,石墨烯/氮化硼)的结合能和广义堆垛能的差异,以研究近邻层的影响.由于近邻层的影响,相邻层结合能会有从-2.3%到22.55%的变化,但层间距的变化很小.此外近邻层也会影响相邻层的广义堆垛能,变化值从-2%到10%,具体的变化值依赖于相邻层的性质.     

石墨烯莫尔超晶格的晶格弛豫与衬底效应

当两个晶格常数不同或具有相对转角的二维材料叠加在一起时,可形成莫尔超晶格结构,其电学性质对层间堆垛方式、旋转角度和衬底具有很强的依赖性.例如,双层石墨烯的旋转角度减小到一系列特定的值(魔角)时,体系的费米面附近出现平带,电子-电子相互作用显著增强,出现莫特绝缘体和非常规超导量子物态.对于具有长周期性的莫尔超晶格体系,层间相互作用所引起的晶格弛豫会使原子偏离其平衡位置而发生重构.本文主要围绕晶格自发弛豫和衬底对石墨烯莫尔超晶格物性的影响展开综述.从理论和实验的角度出发,阐述旋转双层石墨烯、旋转三层石墨烯、以及石墨烯与六方氮化硼堆垛异质结等体系中自发弛豫对其能带结构和物理性质的影响.最后,对二维莫尔超晶格体系的研究现状进行总结和展望.     

转角多层石墨烯层间耦合的共振拉曼光谱研究

我们通过共振拉曼光谱测量了转角多层石墨烯的层间振动模式:剪切模和呼吸模。根据改进的线性模型,我们发现在转角多层石墨烯界面处的层间呼吸耦合与正常Bernal堆垛多层石墨烯的强度相当。此结果明显不同于层间剪切耦合,后者在转角多层石墨烯界面处的层间剪切耦合减弱到了正常Bernal堆垛多层石墨烯的20%。另外,我们首次发现层间呼吸耦合存在着次近邻原子层之间的相互作用,其强度为最近邻的9%。我们发现当采用与界面层间旋转角度相对应的激发光时,转角多层石墨烯的拉曼信号得到极大的增强。为此,我们引入光学跃迁允许的电子联合态密度的概念,通过理论计算,我们发现这种联合态密度的极大值决定了拉曼信号共振线型的激发光能量极值。本研究表明,层间振动模式是探测二维层状异质层间耦合的有效手段,为其在器件应用方面的研究奠定了基础。     

孔洞缺陷对二维石墨烯/氮化硼横向异质结热传导的调控

本文采用孔洞缺陷来实现对二维石墨烯/氮化硼横向异质结热导率的调控.平衡态分子动力学(EMD)计算结果表明,界面孔洞的引入会降低二维石墨烯/氮化硼横向异质结的热导率.相较于有序的孔洞分布,无序的孔洞分布能够更有效地降低异质结的热导率,这一现象可通过声子安德森局域化来解释.孔洞缺陷的存在导致声子的频率和波失发生变化,从而使声子散射变得更加频繁,孔洞随机分布时,则导致声子波在材料中发生多次反射和散射,最终形成局域振动模式.本研究揭示了孔洞缺陷降低二维石墨烯/氮化硼横向异质结热导率的物理机制,对二维热电材料的结构设计有一定的指导意义.     

石墨烯-六方氮化硼面内异质结构的扫描隧道显微学研究

石墨烯-六方氮化硼面内异质结构因可调控石墨烯的能带结构而受到广泛关注. 本文介绍了在超高真空体系内, 利用两步生长法在两类对石墨烯分别有强和弱电子掺杂的基底, 即Rh(111)和Ir(111)上制备石墨烯-六方氮化硼单原子层异质结构. 通过扫描隧道显微镜及扫描隧道谱对这两种材料的形貌和电子结构进行研究发现: 石墨烯和六方氮化硼倾向于拼接生长形成单层的异质结构, 而非形成各自分立的畴区; 在拼接边界处, 石墨烯和六方氮化硼原子结构连续无缺陷; 拼接边界多为锯齿形型, 该实验结果与密度泛函理论计算结果相符合; 拼接界面处的石墨烯和六方氮化硼分别具有各自本征的电子结构, 六方氮化硼对石墨烯未产生电子掺杂效应.     

类石墨烯硼-磷单层材料的电子与光学性能的第一性原理计算研究

基于第一性原理计算,对硼-磷单层材料的电子结构和光学性质进行系统地理论研究. 全局结构搜索和第一性原理分子动力学模拟现实二维硼-磷单层材料能量最低的结构与石墨烯类似,具有很高的稳定性. 类石墨烯二维硼-磷单层是直接带隙半导体,带隙宽度1.37 eV,其带隙宽度随层数增加而减少. 硼-磷单层的带隙宽度受外界应力影响.硼-磷单层的载流子迁移率达到106 cm2/V. MoS2/BP二维异质结可用于光电器件,其理论光电转换效率为17.7%?19.7%. 表明类石墨烯硼-磷二维材料在纳米电子器件与光电子器件的潜在应用价值.     

GaN基异质结缓冲层漏电分析

通过对GaN基异质结材料C-V特性中耗尽电容的比较,得出AlGaN/GaN异质结缓冲层漏电与成核层的关系.实验结果表明,基于蓝宝石衬底低温GaN成核层和SiC衬底高温AlN成核层的异质结材料比基于蓝宝石衬底低温AlN成核层异质结材料漏电小、背景载流子浓度低.深入分析发现,基于薄成核层的异质结材料在近衬底的GaN缓冲层中具有高浓度的n型GaN导电层,而基于厚成核层的异质结材料的GaN缓冲层则呈高阻特性.GaN缓冲层中的n型导电层是导致器件漏电主要因素之一,适当提高成核层的质量和厚度可有效降低GaN缓冲层的背景载流子浓度,提高GaN缓冲层的高阻特性,抑制缓冲层漏电. 关键词： AlGaN/GaN异质结 GaN缓冲层 漏电 成核层     

As/HfS2范德瓦耳斯异质结电子光学特性及量子调控效应

两种或两种以上的单层材料堆垛成范德瓦耳斯异质结是实现理想电子及光电子器件的有效策略.本文选用As单层及HfS₂单层,采用6种堆垛方式构建As/HfS₂异质结,并选取最稳结构,利用杂化泛函HSE06系统地研究了其电子和光学性质以及量子调控效应.计算发现,As/HfS₂本征异质结为Ⅱ型能带对齐半导体,且相对两单层带隙(>2.0 eV)能明显减小(约0.84 eV),特别是价带偏移(VBO)和导带偏移(CBO)可分别高达1.48 eV和1.31 eV,非常有利于研发高性能光电器件和太阳能电池.垂直应变能有效调节异质结的能带结构,拉伸时带隙增大,并出现间接带隙到直接带隙的转变现象,而压缩时,带隙迅速减少直到金属相发生.外加电场可以灵活地调控异质结的带隙及能带对齐方式,使异质结实现Ⅰ型、Ⅱ型和Ⅲ型之间的转变.此外,As/HfS₂异质结在可见光区域有较强的光吸收能力,且可通过外加电场和垂直应变获得进一步提高.这些结果表明As/HfS₂异质结构在电子器件、光电子器件和光伏电池领域具有潜...     

过渡金属二硫化物/三卤化铬范德瓦耳斯异质结的反折叠能带

过渡金属二硫化物MX₂/三卤化铬CrX₃组成的范德瓦耳斯异质结能有效操控MX₂的谷极化,在能谷电子学中有广泛的应用前景.本文结合第一性原理和k投影能带反折叠方法比较研究了MoSe₂/CrI₃, MoSe₂/CrBr₃和WS₂/CrBr₃三种磁性范德瓦耳斯异质结的堆垛和电子结构,探索了体系谷极化产生的物理机理.计算了异质结不同堆垛的势能面,确定了稳定的堆垛构型,阐明了时间/空间反演对称破缺对体系电子结构的影响.由于轨道杂化,磁性异质结的导带情况复杂,且MoSe₂/CrI₃体系价带顶发生明显变化,不能与单层MX₂直接对比.而借助于反折叠能带,计算清晰揭示了CrX₃对MX₂电子结构的影响,定量地获得了MX₂的能谷劈裂,并发现层间距和应变可以有效调控能谷劈裂.当层间距减...     

金属衬底上高质量大面积石墨烯的插层及其机制

石墨烯作为一种新型二维材料,因其优异的性质,在科学和应用领域具有非常重要的意义.而其超高的载流子迁移率、室温量子霍尔效应等,使其在信息器件领域备受关注.如何获得高质量并且与当代硅基工艺兼容的石墨烯功能器件,是未来将石墨烯应用于电子学领域的关键.近年来,研究人员发展了一种在外延石墨烯和金属衬底之间实现硅插层的技术,将金属表面外延石墨烯高质量、大面积的特点与当代硅基工艺结合起来,实现了无需转移且无损地将高质量石墨烯置于半导体之上.通过系统的实验研究并结合理论计算,揭示了插层过程包含四个主要阶段:诱导产生缺陷、异质原子插层、石墨烯自我修复和异质原子扩散成膜,并证实了这一插层机制的普适性.拉曼和角分辨光电子能谱实验结果表明,插层后的石墨烯恢复了本征特性,接近自由状态.此外,还实现了多种单质元素的插层.不同种类的原子形成不同的插层结构,从而构成了多种石墨烯/插层异质结.这为调控石墨烯的性质提供了实验基础,也展现了该插层技术的普适性.     

Faraday rotations,ellipticity, and circular dichroism in magneto-optical spectrum of moiré superlattices

We study the magneto-optical conductivity of a number of van der Waals heterostructures, namely, twisted bilayer graphene, AB-AB and AB-BA stacked twisted double bilayer graphene and monolayer graphene and AB-stacked bilayer graphene on hexagonal boron nitride. As the magnetic field increases, the absorption spectrum exhibits a self-similar recursive pattern reflecting the fractal nature of the energy spectrum. Whilst twisted bilayer graphene displays only weak circular dichroism, the other four structures display strong circular dichroism with monolayer graphene and AB-stacked bilayer graphene on hexagonal boron nitride being particularly pronounced owing to strong inversion symmetry breaking properties of the hexagonal boron nitride layer. As the left and right circularly polarized light interact with these structures differently, plane-polarized incident light undergoes a Faraday rotation and gains an ellipticity when transmitted. The size of the respective angles is on the order of a degree.     

Electronic properties of silicene in BN/silicene van der Waals heterostructures

Silicene is a promising 2D Dirac material as a building block for van der Waals heterostructures(vd WHs). Here we investigate the electronic properties of hexagonal boron nitride/silicene(BN/Si) vd WHs using first-principles calculations.We calculate the energy band structures of BN/Si/BN heterostructures with different rotation angles and find that the electronic properties of silicene are retained and protected robustly by the BN layers. In BN/Si/BN/Si/BN heterostructure, we find that the band structure near the Fermi energy is sensitive to the stacking configurations of the silicene layers due to interlayer coupling. The coupling is reduced by increasing the number of BN layers between the silicene layers and becomes negligible in BN/Si/(BN)_3/Si/BN. In(BN)_n/Si superlattices, the band structure undergoes a conversion from Dirac lines to Dirac points by increasing the number of BN layers between the silicene layers. Calculations of silicene sandwiched by other 2D materials reveal that silicene sandwiched by low-carbon-doped boron nitride or HfO_2 is semiconducting.     

Charge distribution of a potassium-doped combined system of graphene and hexagonal boron nitride

By using first-principles density functional theory, we investigate the charge distribution of a potassium-doped layered combined system of graphene and hexagonal boron nitride. Two configurations of potassium-doped hexagonal boron nitride layers on graphenes and the reverse geometry of graphenes on hexagonal boron nitride layers are considered. We find that the charge distribution exhibits different features in these two situations. In the former case, the outmost hexagonal boron nitride layer cannot screen the external charges offered by potassium atom completely and most of the transferred charges reside on the two bounding layers. In contrary, the outmost graphene layer near the potassium atom can accept almost all of the transferred charges and only a few of them stay at interior layers in the latter case. A more amazing result is that the characteristics of charge transfer are independent of the number of hexagonal boron nitride layers and graphenes.     

Multiphonon Raman spectroscopy properties and Raman mapping of 2D van der Waals solids: graphene and beyond

Strong in‐plane bonding (covalent) and weak van der Waals (vdW) interplanar interactions characterize a number of layered solids, as epitomized by graphite. The advent of graphene (Gr), individual atomic two‐dimensional (2D) layers, isolated from mineral graphite via micromechanical exfoliation enabled the ability to pick, place and stack of arbitrary compositions. Moreover, this discovery implicated an access to other 2D vdW solids beyond graphene and artificially stacking atomic layers forming heterostructures/superlattices. Raman spectroscopy (RS) is a fast reliable non‐destructive analytical tool and an integral part for lattice dynamical structural characterization of crystalline solids at nanoscale, revealing not only the collective atomic/molecular motions but also localized vibrations/modes and specifically used to determine the number of graphene layers and of other 2D vdW solids. We present Raman spectroscopy in first‐, second‐ and higher‐order vibrational modes involving 3 and 4 phonons (overtones and combination) and mapping of graphene (mono‐, bi‐, tri‐ and few‐) layers, semiconducting transition metal dichalcogenides (TMDs) [molybdenum disulfide (MoS₂) and tungsten disulfide (WS₂)] and wide bandgap hexagonal boron nitride (h‐BN) dispersed monolayers, revealing various molecular vibrations and structural quality/disorder. First‐ and higher‐order phonon modes are observed and analyzed in terms of Raman intensity (spatial inhomogeneity or thickness variation), band position (intrinsic mechanical strain) and intensity ratio (structural disorder) as a function of graphene layer (n). An empirical relation for G band position with n is corroborated. All of the higher order modes are observed to upshift almost linearly with n, betraying the underlying interlayer vdW interactions. These findings exemplify the evolution of structural parameters in layered materials in changing from 3‐ to 2‐ or low‐dimensional regime. The results are presented in view of applications of graphene by itself and in combination that help better understanding of physical and electronic properties for nano‐/optoelectronics. Copyright © 2015 John Wiley & Sons, Ltd.     

Observation of Spin and Valley Splitting of Landau Levels under Magnetic Tunneling in Graphene/Boron Nitride/Graphene Structures

Resonance magnetic tunneling in heterostructures formed by graphene single sheets separated by a hexagonal boron nitride barrier and bounded by two gates has been investigated in a strong magnetic field, which has allowed observing transitions between spin- and valley-split Landau levels with various indices belonging to different graphene sheets. An unexpected increase with the temperature in the interlayer tunneling conductance owing to transitions between the Landau levels in strong magnetic fields cannot be explained by existing theories.     

Dynamics of Optical Pulse Propagation in the Ribbon Formed by Graphene and Boron Nitride Layers of Finite Width

The propagation of an ultrashort optical pulse in the multilayered structure formed by alternating graphene and boron nitride layers is considered. Conduction electrons of this system at low temperatures are described by the effective long-wavelength Hamiltonian, and the electromagnetic field is considered based on the classical Maxwell equations. Dependence of the evolution on the ultrashort pulse amplitude and nanoribbon layer width is established.     

Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field

Using density functional theory calculations, we investigate the electronic properties of arsenene/graphene van der Waals (vdW) heterostructures by applying external electric field perpendicular to the layers. It is demonstrated that weak vdW interactions dominate between arsenene and graphene with their intrinsic electronic properties preserved. We find that an n-type Schottky contact is formed at the arsenene/graphene interface with a Schottky barrier of 0.54 eV. Moreover, the vertical electric field can not only control the Schottky barrier height but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the interface. Tunable p-type doping in graphene is achieved under the negative electric field because electrons can transfer from the Dirac point of graphene to the conduction band of arsenene. The present study would open a new avenue for application of ultrathin arsenene/graphene heterostructures in future nano- and optoelectronics.     

Gate control of lattice-pseudospin currents in graphene on SW2: Effect of sublattice symmetry breaking and spin–orbit interaction

Strong spin–orbit interaction (SOI) in graphene grown on tungsten disulfide (SW₂) has been recently observed, leading to energy gap opening by SOI. Energy gap in graphene may also be induced by sublattice symmetry breaking (SSB) where energy level in A-sublattice is not equal to that in B-sublattice. SSB-gap may be produced by growing graphene on hexagonal boron nitride or silicon carbide. In this work, we investigate transport property in a SOI/SSB/SOI gapped graphene junction, focusing the effect of interplay of SOI and SSB. We find that, lattice-pseudospin polarization (L-PSP) can be controlled perfectly from +100% to −100% by gate voltage. This is due to the fact that in graphene grown on SW₂, the carriers carry lattice-pseudospin degree of freedom “up and down”. The SSB-gapped graphene exhibits pseudo-ferromagnetism to play the role of lattice-pseudospin filtering barrier. It is also found that the SOI and SSB-gaps in graphene may be measured by characteristic of L-PSP in the junction. The proposed controllable-lattice-pseudospin currents may be applicable for graphene-based pseudospintronics.     

Optical transitions in single-wall boron nitride nanotubes

Optical transitions in single-wall boron nitride nanotubes are investigated by means of optical absorption spectroscopy. Three absorption lines are observed. Two of them (at 4.45 and 5.5 eV) result from the quantification involved by the rolling up of the hexagonal boron nitride (h-BN) sheet. The nature of these lines is discussed, and two interpretations are proposed. A comparison with single-wall carbon nanotubes leads one to interpret these lines as transitions between pairs of van Hove singularities in the one-dimensional density of states of boron nitride single-wall nanotubes. But the confinement energy due to the rolling up of the h-BN sheet cannot explain a gap width of the boron nitride nanotubes below the h-BN gap. The low energy line is then attributed to the existence of a Frenkel exciton with a binding energy in the 1 eV range.