SiO_2表面双酚A中空分子印迹纳米球的制备及识别性能（英文）

本文成功制备了具有均一单分散性的SiO_2核-壳分子印迹聚合物(SiO_2@MIPs)以及中空分子印迹聚合物纳米球(MHMIPs).通过一步沉淀聚合过程,利用Si02载体表面的Si-OH与功能单体MMA的酯化反应来促进聚合物涂覆在Si02球表面,从而简化了表面分子印迹技术中Si02载体改性的繁琐步骤,为在载体表面直接分子印迹提供了一种简单可行的方法,优化得出了合成具有较好吸附容量以及对双酚A(BPA)选择性的MHMIPs的印迹前体物的合适比例为BPA:MMA:EGDMA=1:6:20.在优化的条件下,MHMIPs的壳厚度随着印迹前体物与Si02载体的质量比的增大而变厚,且得到的印迹聚合物均具有较好的均一性和分散度.所制得的MHMIPs对BPA具有高的吸附容量(270μml/g)以及快的吸附速率(吸附80%的BPA仅需5 min左右).这一结果在对BPA的富集以及分离方面将会呈现诱人的吸引力,而且其优越的吸附性能将使其成为在许多方面的应用替代者,特别是在先进分离技术方面.     

中空TiO2纳米球的制备

报道了一种新的无机模板法合成中空的TiO₂纳米球,该法以TiCl₄为钛源,中空Sb₂S₃微球为模板,利用TiCl₄水解产生的TiO₂沉积在模板的表面,同时产生的HCl消蚀Sb₂S₃,一步制备中空纳米材料。     

丹酰氯SiO2纳米发光标记物的制备

通过合成丹酰氯的荧光单体硅酯前驱物,采用油包水的反相微乳液法,以丹酰氯的荧光单体硅酯前驱物为核材料,成功地制备了丹酰氯的荧光纳米颗粒,克服了传统方法制备核壳荧光纳米颗粒中存在的荧光染料泄漏问题.通过透射电子显微镜表征该纳米粒子呈球形,大小均匀,直径为40nm左右.所制得纳米颗粒荧光性质稳定,受外界环境的影响小,且潜在生物亲和性,是一种新型的荧光标记物.     

SiO2纳米微球表面结构在可见光波段的减反特性

研究了不同尺寸SiO2胶体微球形成纳米结构薄膜的光学传输特性和光子带隙。通过在玻璃基底上自组装透光的SiO2胶体微球形成胶体晶体薄膜, 依据布拉格定律,分析微球尺寸对胶体晶体光子带隙的影响。为实现可见光波段的全方位减反射,提出通过改变胶体粒径将胶体晶体带隙位置移动至紫外波段,理论计算得出当粒径为112 nm,占空比为0.45时能实现可见光波段0.5%的平均反射率。实验结果表明,玻璃基底在400~800 nm间的平均反射率从4.3%降低至0.7%,最小反射率达0.3%。通过控制微球粒径移动光子带隙位置,优化晶体结构参数实现了可见光波段的减反射,有效提高了光学组件对可见光的利用率。     

介孔SiO2纳米棒的制备及其表面锚接金纳米粒子

 以正硅酸乙酯为硅源,十六烷基三甲基溴化铵为模板剂,聚乙二醇为分散剂,采用溶胶-凝胶法制备出SiO₂纳米粒子,应用透射电镜、扫描电镜、X射线衍射仪、红外光谱仪和X射线能谱仪研究了粒子的性能。结果表明：所得产物是具有周期性规则介孔的棒状粒子,长径比随着硅源、模板剂和分散剂浓度的降低而减小;向反应体系中引入乙醇,随着乙醇与水的体积比例的增加,粒子由棒状向球状转变,进而形成不规则絮状凝聚体。用硅烷化技术对SiO₂纳米棒表面进行修饰后吸附平均粒径3.7 nm的金种子,再用多轮生长法使种子长大,经过30轮生长,种子平均粒径增大至59 nm,得到了SiO₂-Au复合纳米体系。透射电镜和紫外-可见分光光度计分析结果表明：金纳米粒子锚接在SiO₂纳米棒表面的某些点位,呈分散分布;复合体系表现出强烈的金的表面等离子体共振吸收峰,该峰随着金粒子的粒径增大,在500~700 nm波段内红移。     

超亲水性SiO2-TiO2纳米颗粒阵列结构的制备与性能研究

用分子自组装的方法在玻璃衬底上分别制备了TiO₂纳米颗粒层和SiO₂-TiO₂复合纳米颗粒阵列结构. 其中,SiO₂ 纳米颗粒层用旋涂法制备,得到密排阵列结构,而TiO₂纳米颗粒层则用浸渍提拉法制备. 文章分析了TiO₂纳米颗粒层和SiO₂-TiO₂复合纳米颗粒阵列结构的理论粗糙度,并通过扫描电子显微镜研究了它们的微观结构,用接触角 关键词： 自清洁 表面粗糙度 光催化 分子自组装     

N掺杂SiO2纳米薄膜的制备及其磁性

利用射频磁控反应溅射技术,制备了氮掺杂的SiO₂纳米薄膜.发现N掺杂SiO₂体系纳米薄膜具有铁磁性.较小的氮化硅颗粒均匀分布在氧化硅基质中有利于磁有序的形成.基底温度为400℃时,样品薄膜具有最大的饱和磁化强度和矫顽力,分别为35 emu/cm³和75 Oe.薄膜的磁性可能产生于氮化硅和氧化硅的界面.理论计算表明,N掺杂SiO₂体系具有净自旋.同时,由氮化硅和氧化硅界面之间的电荷转移导致的轨道磁矩也会对样品的磁性有贡献 关键词： 2薄膜')" href="#">N掺杂SiO₂薄膜 射频磁控反应溅射 界面磁性 基底温度     

溶胶-凝胶法制备纳米多孔SiO2薄膜

以正硅酸乙酯(TEOS)为原料，采用旋转涂敷的方法，结合溶胶-凝胶技术在硅衬底上制备超低介电常数多孔SiO₂薄膜.采用两种不同的改性方法对薄膜表面进行改性，傅里 叶变换红外光谱分析发现改性后薄膜中含有大量的—CH₃键，从而减少了孔洞塌陷.用扫 描电子显微镜观察薄膜的表面形貌，发现薄膜内孔洞尺寸在70—80 nm之间.调节溶胶pH值，发现pH值越小凝胶时间越长.对改性样品热处理的结果表明，在300 ℃时介电常数最低达2.05. 关键词： 2')" href="#">多孔SiO₂ 低介电常数 溶胶-凝胶     

纳米SiO2复合对Mg3Sb2基材料热电性能的影响

Mg₃(Sb,Bi)2基热电材料由于其优异的热电性能和较低的成本近来受到广泛的关注.本研究通过将纳米SiO₂复合进成分为Mg_3.275Mn_0.025Sb_1.49Bi_0.5Te_0.01的基体相中,考察其热电输运性能的变化及机制.结果表明,当SiO₂复合进Mg₃Sb₂基材料中时,由于引进大量的微小晶界,能有效地散射声子,促使晶格热导率降低,优化热输运性能,如SiO₂体积含量为0.54%时,室温时热导率由复合前的1.24 W/(m·K)降至1.04 W/(m·K),降幅达到15%;同时其对电子也产生强烈的散射作用,导致迁移率和电导率大幅下滑,结果表现为近室温区功率因子剧烈衰减,恶化了电输运性能.电性能相对于热性能较大降低幅度使得材料在整个测试温区的热电优值没有得到改善.纳米SiO₂作为Mg₃Sb₂     

SiO2的赝晶化及AlN/SiO2纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列不同SiO₂层厚度的AlN/SiO₂纳米多层膜，利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能，研究了SiO₂层在多层膜中的晶化现象及其对多层膜生长方式及力学性能的影响. 结果表明，由于受AlN六方晶体结构的模板作用，溅射条件下以非晶态存在的SiO₂层在其厚度小于0.6 nm时被强制晶化为与AlN相同的六方结构赝晶体并与AlN形成共格外延生长. 由于不同模量的两调制层存在晶格错配度，多层膜中产生了拉、压交变的应力场，使得多层膜产生硬度升高的超硬效应. SiO₂随层厚的进一步增加又转变为以非晶态生长，多层膜的外延生长结构受到破坏，其硬度也随之降低. 关键词： 2纳米多层膜')" href="#">AlN/SiO₂纳米多层膜 赝晶化 应力场 超硬效应     

磺胺二甲嘧啶分子印迹聚合物制备与光谱特性

本研究以磺胺二甲嘧啶为模板分子,甲基丙烯酸为功能单体,低温紫外引发聚合制备分子印迹聚合物,用紫外光谱法对磺胺二甲嘧啶与甲基丙烯酸的结合作用及磺胺二甲嘧啶印迹聚合物的静态吸附性能和选择性能进行研究,试验结果表明,溶液中的功能单体与印迹分子之间产生了结合作用;与空白印迹聚合物相比,以甲基丙烯酸为功能单体、磺胺二甲嘧啶为模板的分子印迹聚合物展现了较高的结合容量,与其他结构类似的底物磺胺异唑相比,磺胺二甲嘧啶分子印迹聚合物对磺胺二甲嘧啶模板分子显示出明显的选择性和特异性,静态分配系数K_D可达282.3 mg·mL-1,分离因子α可达3.9,并预测磺胺二甲嘧啶分子印迹聚合物结合机理。分析了甲基丙烯酸、二甲基丙烯酸乙二醇酯和磺胺二甲嘧啶分子印迹聚合物的红外谱图,研究结果表明制备的磺胺二甲嘧啶印迹聚合物中CC双键峰很小,并且功能键羧酸键没有明显变化,经交联聚合得到的聚合物确实存在可以同印迹分子相互作用的化学基团。     

Synthesis, characterization and degradation of Bisphenol A using Pr, N co-doped TiO2 with highly visible light activity

Praseodymium and nitrogen co-doped titania (Pr/N-TiO₂) photocatalysts, which could degrade Bisphenol A (BPA) under visible light irradiation, were prepared by the modified sol-gel process. Tetrabutyl titanate, urea and praseodymium nitrate were used as the sources of titanium, nitrogen and praseodymium, respectively. The resulting materials were investigated by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), UV-vis absorbance spectroscopy, X-ray photoelectron spectroscopy (XPS), N₂ adsorption-desorption isotherm and Fourier transform infrared spectra (FTIR). It was found that Pr doping inhibited the growth of crystalline size and the transformation from anatase to rutile. The degradation of BPA under visible light illumination was taken as probe reaction to evaluate the photo-activity of the co-doped photocatalyst. In our experiments, the optimal dopant amount of Pr was 1.2 mol% and the calcination temperature was 500 °C for the best photocatalytic activity. Pr/N-TiO₂ samples exhibited enhanced visible-light photocatalytic activity compared to N-TiO₂, undoped TiO₂ and commercial P25. The nitrogen atoms were incorporated into the crystal of titania and could narrow the band gap energy. Pr doping could slow the radiative recombination of photogenerated electrons and holes in TiO₂. The improvement of photocatalytic activity was ascribed to the synergistic effects of nitrogen and Pr co-doping.     

基于双酚A的希夫碱型锌配位聚合物的合成及发光性能

以双酚A为原料合成了具有对称的桥联结构的双水杨醛,在此基础上合成了一系列的双希夫碱配体及相应的锌配位聚合物.利用红外吸收光谱、核磁共振等方法研究了化合物的分子结构,利用热重分析研究了配合物的热稳定性,利用紫外吸收、荧光光谱研究了该系列配合物的发光性能,利用循环伏安法测试了配合物的能级带隙.研究结果表明:该系列配合物具有...     

Effect of SiO2 protective layer on the femtosecond laser-induced damage of HfO2/SiO2 multilayer high-reflective coatings

Two kinds of HfO₂/SiO₂ 800 nm high-reflective (HR) coatings, with and without SiO₂ protective layer were deposited by electron beam evaporation. Laser-induced damage thresholds (LIDT) were measured for all samples with femtosecond laser pulses. The surface morphologies and the depth information of all samples were observed by Leica optical microscopy and WYKO surface profiler, respectively. It is found that SiO₂ protective layer had no positive effect on improving the LIDT of HR coating. A simple model including the conduction band electron production via multiphoton ionization and impact ionization is used to explain this phenomenon. Theoretical calculations show that the damage occurs first in the SiO₂ protective layer for HfO₂/SiO₂ HR coating with SiO₂ protective layer. The relation of LIDT for two kinds of HfO₂/SiO₂ HR coatings in calculation agrees with the experiment result.     

Effects of synthesis variables on the magnetic properties of CoFe2O4 nanoparticles

Cobalt ferrite nanoparticles (CoFe₂O₄) have been synthesized using precipitation in water solution with polyethylene glycol as surfactant. Influence of various synthesis variables included pH, reaction time and annealing temperature on the magnetic properties and particle sizes has also been studied. Structural identification of the samples was carried out using Thermogravimetric and Differential thermal analysis, X-ray diffraction, Fourier transform infrared spectroscopy, Scanning electron microscopy, High resolution transmission electron microscopy. Vibrating sample magnetometer was used for the magnetic investigation of the samples. Magnetic properties of nanoparticles show strong dependence on the particle size. The magnetic properties increase with pH of the precipitating medium and annealing temperature while the coercivity goes through a maximum, peaking at around 25 nm.     

压力对纳米CoFe2O4/SiO2复合材料结构的影响

 采用溶胶-凝胶工艺和高温高压实验技术,制备了纳米CoFe₂O₄/SiO₂复合材料。利用X射线衍射仪、扫描电子显微镜和振动样品磁强计,对样品的结构、微观形貌和磁性进行了研究,并对CoFe₂O₄中阳离子的占位情况进行了讨论。结果表明,随着处理压力的升高,样品的晶粒尺寸增大,晶格常数减小,比饱和磁化强度增大。通过计算结果可以推断,压力的升高导致CoFe₂O₄中的部分Fe³⁺从A位移向了B位,而部分Co²⁺则从B位移向了A位。     

Structure-related infrared optical properties of BaTiO3 thin films grown on Pt/Ti/SiO2/Si substrates

BaTiO₃ thin films with different thickness have been grown on Pt/Ti/SiO₂/Si substrates by a modified sol-gel method. X-ray diffraction analyses show that the BaTiO₃ thin films are polycrystalline. The crystalline quality of the films is improved with increasing thickness. The infrared optical properties of the BaTiO₃ thin films have been investigated using an infrared spectroscopic ellipsometry in the wave number range of 800-4000 cm⁻¹ (2.5-12.5 μm). By fitting the measured pseudodielectric functions with a three-phase model (Air/BaTiO₃/Pt), and a derived classical dispersion relation for the thin films, the optical constants and thicknesses of the thin films have been simultaneously obtained. The refractive index of the BaTiO₃ thin films increases and on the other hand, the extinction coefficient does not change with increasing thickness in the entirely measured wave number range. The dependence of the refractive index on the film thickness has been discussed in detail and was mainly due to both the crystalline quality of the films and packing density. Finally, the absorption coefficient was calculated in the infrared region for applications in the pyroelectric IR detectors.     

Effects of hydrogen plasma annealing on the luminescence from a-Si:H/SiO2 and nc-Si/SiO2 multilayers

Effects of post-hydrogen plasma annealing (HPA) on a-Si:H/SiO₂ and nc-Si/SiO₂ multilayers have been investigated and compared. It is found that photoluminescence (PL) from hydrogen-passivated samples was improved due to the reduction of non-radiative recombination defects. Some interesting difference is that during HPA, atomic hydrogen can directly passivate defects of a-Si:H/SiO₂, which results in the reappearance of luminescence band at 760 nm, while for nc-Si/SiO₂, hydrogen passivation requires additional thermal annealing after nc-Si/SiO₂ multilayer was treated by HPA. It is indicated that higher atomic mobility is needed to passivate defects at nc-Si/SiO₂ interface compared with a-Si:H/SiO₂ interface.     

A quantum chemical study of ZrO2 atomic layer deposition growth reactions on the SiO2 surface

Zirconium oxide (ZrO₂) is one of the leading candidates to replace silicon oxide (SiO₂) as the gate dielectric for future generation metal-oxide-semiconductor (MOS) based nanoelectronic devices. Experimental studies have shown that a 1–3 monolayer SiO₂ film between the high permittivity metal oxide and the substrate silicon is needed to minimize electrical degradation. This study uses density functional theory (DFT) to investigate the initial growth reactions of ZrO₂ on hydroxylated SiO₂ by atomic layer deposition (ALD). The reactants investigated in this study are zirconium tetrachloride (ZrCl₄) and water (H₂O). Exchange reaction mechanisms for the two reaction half-cycles were investigated. For the first half-reaction, reaction of gaseous ZrCl₄ with the hydroxylated SiO₂ surface was studied. Upon adsorption, ZrCl₄ forms a stable intermediate complex with the surface SiO₂–OH^* site, followed by formation of SiO₂–O–Zr–Cl^* surface sites and HCl. For the second half-reaction, reaction of H₂O on SiO₂–O–Zr–Cl^* surface sites was investigated. The reaction pathway is analogous to that of the first half-reaction; water first forms a stable intermediate complex followed by evolution of HCl through combination of a Cl atom from the surface site and an H atom from H₂O. The results reveal that the stable intermediate complexes formed in both half-reactions can lead to a slow film growth rate unless process parameters are adjusted to lower the stability of the complex. The energetics of the two half-reactions are similar to those of ZrO₂ ALD on ZrO₂ and as well as the energetics of ZrO₂ ALD on hydroxylated silicon. The energetics of the growth reactions with two surface hydroxyl sites are also described.