Identification of optical nonlinearities of dye-doped nematic and polymer-dispersed liquid crystals using Z-scan technique

This study investigates the nonlinear optical properties of azo-dye-doped nematic and polymer-dispersed liquid crystal (ADDPDLC) films with nano-sized LC droplets using the Z-scan technique, which is a simple but powerful technique for measuring the optical Kerr constants of materials. The results indicate that the optical Kerr constant (n₂) of the azo-dye-doped nematic LC (ADDLC) film is large because of the photoisomerization effect and the thermal effect. Therefore, the optical Kerr constant of this material can be modulated by varying the temperature of the sample and the direction of polarization of incident laser. The range of n₂ modulated is from −5.26 × 10⁻³ to 1.62 × 10⁻³ cm²/W. The optical Kerr constants of ADDPDLC films at various temperatures are also measured. The experimental results reveal that liquid crystals in the ADDPDLC film strengthen the nonlinearity. The n₂ of the ADDPDLC film is maximal at ∼35 °C, because of the decrease in the clearing temperature of the ADDPDLC films. The clearing temperatures of the liquid crystals (E7), and the ADDPDLC film used in this work were found to be 61 °C and 43 °C, respectively.     

Structural and thermodynamic properties of Os from first-principles calculations

We investigate the structural, thermodynamic and electronic properties of Os by plane-wave pseudopotential density functional theory method. The obtained lattice constants, bulk modulus and cell volumes per formula unit are well consistent with the available experimental data. Especially, from our calculated bulk modulus, we conclude that Os is more compressible than diamond. Moreover, the temperature induced phase transition of Os from HCP structure to FCC structure has been obtained. It is found that the transition temperature of Os at zero pressure is 2702 K. However no transition pressure is found in our calculations. The effect of bulk modulus B as well as other thermodynamic properties of Os (including the thermal expansion α and the Grüneisen constant γ) on temperatures have also been studied. Our calculated thermal expansion α=1.510×10⁻⁵ K⁻¹ and the Grüneisen constant γ=2.227 for HCP structure at room temperature agree very well with the experimental data. The density of states for HCP structure at 0 K and FCC structure at transition temperature 2702 K are also investigated in our work.     

Electro-optical Kerr effect of nematic mixtures comprised of 6CHBT and 6BOBT

Static Kerr effect and the pre-transition temperature were investigated for the 6CHBT, 6BOBT and the nematic mixtures, M₁ (40% 6CHBT: 60% 6BOBT), M₂ (30% 6CHBT: 70% 6BOBT) and M₃ (20% 6CHBT: 80% 6BOBT) at temperatures above the nematic-isotropic transition temperature. The linear dependence of (T-T*)⁻¹ on the Kerr constant is found to be in good agreement with the predications of the Landau-De Gennes model. The hypothetical second order phase transition temperatures and susceptibility values were determined for these compounds.     

Van der Pauw resistivity measurements on evaporated thin films of cadmium arsenide, Cd3As2

Cadmium arsenide is a II-V semiconductor, exhibiting n-type intrinsic conductivity with high mobility and narrow bandgap. It is deposited by thermal evaporation, and has shown the Schottky and Poole-Frenkel effects at high electric fields, but requires further electrical characterisation. This has now been extended to low-field van der Pauw lateral resistivity measurements on films of thickness up to 1.5 μm. Resistivity was observed to decrease with increasing film thickness up to 0.5 μm from about 3 × 10⁻³ Ω m to 10⁻⁵ Ω m, where the crystalline granular size increases with film thickness. This decrease in resistivity was attributed to a decrease in grain boundary scattering and increased mobility. Substrate temperature during deposition also influenced the resistivity, which decreased from around 10⁻⁴ Ω m to (10⁻⁵ to 10⁻⁶) Ω m for an increase in substrate deposition temperature from 300 K to 423 K. This behaviour appears to result from varying grain sizes and ratios of crystalline to amorphous material. Resistivity decreased with deposition rate, reaching a minimum value at about 1.5 nm s⁻¹, before slowly increasing again at higher rates. It was concluded that this resulted from a dependence of the film stoichiometry on deposition rate. The dependence of resistivity on temperature indicates that intercrystalline barriers dominate the conductivity at higher temperatures, with a hopping conduction process at low temperatures.     

Structural and magnetic properties of Li-Cu mixed spinel ferrites

Li_0.5−x/2Cu_xFe_2.5−x/2O₄ (where x=0.0-1.0) ferrites have been prepared by solid-state reaction. X-ray diffraction was used to study the structure of the above investigated ferrites at various sintering temperatures. Samples were sintered at 1000, 1100 and 1200 °C for 3 h in the atmosphere. For the sintering temperature of 1000 °C, Li_0.5−x/2Cu_xFe_2.5−x/2O₄ undergoes cubic to tetragonal transformation for higher Cu content. However, for the sintering temperature of 1100 and 1200 °C, X-ray diffraction patterns are mainly characterized by fcc structure, though presence of tetragonal distortion was found by other temperature dependence of initial permeability curves. The lattice parameter, X-ray density and bulk density were calculated for different compositions. Curie temperature was measured from the temperature dependence of initial permeability curves. Curie temperatures of Li-Cu mixed ferrites were found to decrease with the increase in Cu²⁺ content due to the reduction of A-B interaction. As mentioned earlier, temperature dependence of initial permeability curves was characterized by tetragonal deformation for the samples containing higher at% of Cu. The complex initial permeability has been studied for different samples. The B-H loops were measured at constant frequency, f=1200 Hz, at room temperature (298 K). Coercivity and hysteresis loss were estimated for different Cu contents.     

Doping and temperature dependence of inversion symmetry breaking in La2−xSrxCuO4

The doping dependence of the Raman spectra of high quality La_2−xSr_xCu^16,18O₄ polycrystalline compounds has been investigated at low temperatures. It is shown that symmetry forbidden bands peaked at ∼150 cm⁻¹, ∼280 cm⁻¹, and ∼370 cm⁻¹ are activated in the (xx/yy) polarization Raman spectra due to the local breaking of the inversion symmetry mainly at low temperatures and for doping concentrations for which the compound is superconducting. The apparent A₁-character of the activated modes in the symmetry reduced phase indicates a reduction from the D_2h to C_2v or D₂ crystal symmetries, which associates the observed modes to specific IR-active phonons with eigenvectors mainly along the c-axis. The temperature and doping dependence of this inversion symmetry breaking and the superconducting transition temperature are very similar, though the symmetry reduction occurs at significantly higher temperatures.     

Magnetic and magnetocaloric properties of the intermetallic compound TbNiAl

Magnetization measurements have been carried out on the intermetallic compound TbNiAl in applied fields up to 120 kOe. Temperature dependence of magnetization under zero-field-cooled and field-cooled conditions shows thermomagnetic irreversibility, which is attributed to magnetic frustration. With the increase of field, the irreversibility decreases and vanishes completely at high fields. Magnetocaloric effect has been calculated in terms of isothermal magnetic entropy change using magnetization isotherms obtained at various temperatures. The maximum entropy change is 13.8 J kg⁻¹ K⁻¹ near the ordering temperature for a field change of 50 kOe. The refrigerant capacity is found to be 494 J kg⁻¹ for the same field change and for a temperature difference of 52 K between the cold and the hot sinks.     

Electrical conductivity of 4-tricyanovinyl-N,N-diethylaniline

Physical characterizations of 4-tricyanovinyl-N,N-diethylaniline, TCVA, have been reported. The differential scanning calorimetry measurements of TCVA showed that this compound is stable up to 423 K. The temperature dependence of electrical conductivity, in the temperature range from 298 to 403 K, was studied on pellet samples of TCVA with evaporated ohmic Au electrodes. The electrical conductivity was found to be 7.01×10⁻⁹ Ω⁻¹ cm⁻¹ at room temperature. The temperature dependence of the electrical conductivity is typical for semiconducting compounds. The current density-voltage (J-V) characteristics of TCVA pellet samples have been investigated at different temperatures. In low-voltage region, the conduction current obeys Ohm's law while the charge transport phenomenon appears to be space-charge-limited current in the higher voltage regions.     

Mid-infrared absorption cross-sections and temperature dependence of CFC-113

The temperature dependence of the infrared absorption cross-sections of CFC-113 (1,1,2-trichlorotrifluoroethane) in a pure vapor phase has been recorded in the 600-1250 cm⁻¹ spectral region using Fourier transform spectroscopy. Spectra at 0.05 cm⁻¹ resolution have been used to derive the integrated band strengths of the five main absorption bands over a range of temperatures from 223 to 283 K. Our results show good agreement with previously published data. The new cross-sections will allow more accurate retrieval of atmospheric CFC-113 concentrations using infrared spectroscopic techniques.     

Analysis of the current-transport mechanism across a CVD diamond/silicon interface

This work presents a study on the mechanism of injection and charge transport through a CVD diamond/n⁺-Si interface. The current-voltage-temperature characteristics of CVD diamond/silicon heterojunctions measured in the temperature range 119-400 K have been interpreted according to thermionic theory and thermionic field-emission theory. This junction shows deviations from the ideal thermionic theory current model, suggesting the presence of surface states, thin-layer depletion and/or non-homogeneity in the diamond/silicon interface. The T₀ anomaly has been used to explain the behaviour of the ideality factor with temperature. At very low temperatures tunnelling may occur because the E₀₀ values for these junctions are close to the value expected by thermionic field-emission theory. The usual activation-energy plot deviates from linearity at low temperatures. This deviation has been corrected supposing a ln(J_S/T²) versus 10³/nT plot. Under these conditions the Richardson constant is found to be 0.819 A cm⁻² K⁻², which is close to the theoretical value of 1.2 A cm⁻² K⁻². Field-emission device is a promising application for diamond/silicon structure.     

Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN

The use of a TiB₂ diffusion barrier for Ni/Au contacts on p-GaN is reported. The annealing temperature (25-950 °C) dependence of ohmic contact characteristics using a Ni/Au/TiB₂/Ti/Au metallization scheme deposited by sputtering were investigated by contact resistance measurements and auger electron spectroscopy (AES). The as-deposited contacts are rectifying and transition to ohmic behavior for annealing at ≥500 °C . A minimum specific contact resistivity of ∼3 × 10⁻⁴ Ω cm⁻² was obtained after annealing over a broad range of temperatures (800-950 °C for 60 s). The contact morphology became considerably rougher at the higher end of this temperature range. AES profiling showed significant Ti and Ni outdiffusion through the TiB₂ at 800 °C. By 900 °C the Ti was almost completely removed to the surface, where it became oxidized. Use of the TiB₂ diffusion barrier produces superior thermal stability compared to the more common Ni/Au, whose morphology degrades significantly above 500 °C.     

Magnetic and magneto-optical properties of FeRh thin films

The magnetic and magneto-optical properties of FeRh thin films epitaxially deposited onto MgO(1 0 0) substrates by RF sputter-deposition system have been investigated in conjunction with the structure. An intriguing virgin effect has been found in the M–T curves of the as-deposited FeRh thin films, which is presumably interpreted in term of a change in structural phase when heating. Also, a (negative) maximum peak of Kerr rotation at around 3.8 eV has been observed when FeRh thin films are in ferromagnetic state. The polar Kerr rotation angle is found to increase at temperatures above 100 °C, which corresponds to the antiferromagnet (AF)–ferromagnet (FM) transition of FeRh thin films.     

One-magnon light scattering and spin-reorientation transition in epitaxial BiFeO3 thin films

Raman scattering from one-magnon excitation has been observed for the first time in epitaxial BiFeO₃ thin films grown on (1 1 1) SrTiO₃ substrates. The intensities and the frequency of the magnon mode at 18.9 cm⁻¹ (M₁) showed a discrepancy at the characteristic temperatures of ∼140 and 200 K and the magnon mode at 27.9 cm⁻¹ (M₂) disappeared at ∼200 K suggesting spin-reorientation (SR) transition in the epitaxial BFO film. The dc susceptibility measurement showed a large discrepancy near these two temperatures evidently elucidating the spin-reorientation transition mechanism. The partial spectral weight of the magnon modes is believed to be transferred to the lowest phonon mode appearing at 72.8 cm⁻¹ and higher magnon mode M₂ disappearing near 200 K reveal magnon-phonon coupling near to SR transition.     

Variable-temperature Raman scattering study on anatase titanium dioxide nanocrystals

The temperature dependence of the Raman modes in anatase TiO₂ nanocrystals has been investigated over the temperature range 77-873 K. With increasing temperature, the frequency of the E_g mode at 639 cm⁻¹ shifts sublinearly to the lower frequencies, however, the frequency of the lowest-frequency E_g mode shifts sublinearly to the higher frequencies from 138 cm⁻¹ at 77 K to 152 cm⁻¹ at 873 K and the frequency of the B_1g mode at 397 cm⁻¹ increases firstly and attains a maximum near 350 K. The linewidth of all of the three modes increases linearly with increasing temperature. The anharmonic effects contribute a lot to the temperature dependence behavior of the frequency and linewidth of Raman modes in anatase TiO₂ nanocrystals.     

Heat capacity of paramagnetic nickelocene: Comparison with diamagnetic ferrocene

Nickelocene [bis(η⁵-cyclopentadienyl)nickel: Ni(C₅H₅)₂, electron spin S=1, the ground state configuration ³A_2g] is paramagnetic and belongs to a typical molecule-based magnet. Heat capacities of nickelocene have been measured at temperatures in the 3−320 K range by adiabatic calorimetry. By comparing with those of diamagnetic ferrocene crystal, a small heat capacity peak centered at around 15 K and a sluggish hump centered at around 135 K were successfully separated. The low-temperature peak at 15 K caused by the spin is well reproduced by the Schottky anomaly due to the uniaxial zero-field splitting of the spin S=1 with the uniaxial zero-field splitting parameter D/k=45 K (k: the Boltzmann constant). The magnetic entropy 9.7 J K⁻¹ mol⁻¹ is substantially the same as the contribution from the spin-manifold R ln 3=9.13 J K⁻¹ mol⁻¹ (R: the gas constant). The sluggish hump centered at around 135 K arises from rotational disordering of the cyclopentadienyl rings of nickelocene molecule. The enthalpy and entropy gains due to this anomaly are 890 J mol⁻¹ and 6.9 J K⁻¹ mol⁻¹, respectively. As the hump spreads over a wide temperature region, separation of the hump from the observed heat capacity curve involves a little bit ambiguity. Therefore, these values should be regarded as being reasonable but tentative. The present entropy gain is comparable with 5.5 J K⁻¹ mol⁻¹ for the sharp phase transition at 163.9 K of ferrocene crystal. This fact implies that although the disordering of the rings likewise takes place in both nickelocene and ferrocene, it proceeds gradually in nickelocene and by way of a cooperative phase transition in ferrocene. A reason for this originates in loose molecular packing in nickelocene crystal. Molar heat capacity and the standard molar entropy of nickelocene are larger than those of ferrocene beyond the mass effect over the whole temperature region investigated. This fact provides with definite evidences for the loose molecular packing in nickelocene crystal.     

Kinetic modeling of the benzyl + HO2 reaction

Benzyl is a resonantly stabilized radical that commonly occurs as an intermediate in the combustion of aromatic compounds. The bimolecular reaction of benzyl with HO₂ is important in the oxidation of toluene, especially at low to moderate temperatures, where unimolecular decomposition of the benzyl radical is slow. We show that the addition of HO₂ to the methylene site in benzyl produces a vibrationally excited benzylhydroperoxide adduct, with over 60 kcal mol⁻¹ (251 kJ mol⁻¹) of excess energy above the ground state. RRKM simulations are performed on the benzyl + HO₂ reaction, using thermochemical and kinetic parameters obtained from ab initio calculations, with variational transition state theory (VTST) for treatment of barrierless radical + radical reaction kinetics. Our results reveal that the benzyl + HO₂ reaction proceeds predominantly to the benzoxyl radical + OH at temperatures of around 800 K and above, with the production of stabilized benzylhydroperoxide molecules dominating at lower temperatures. The heat of formation of the benzyl radical is calculated as 52.5 kcal mol⁻¹ (219.7 kJ mol⁻¹) at the G3B3 level of theory, in relative agreement with other recent determinations of this value.     

Evidence of glassy ferromagnetic phase and kinetic arrest of electronic phase in Sm0.35Pr0.15Sr0.5MnO3 manganites

The effect of doping of rare earth Pr³⁺ ion as a replacement of Sm³⁺ in Sm_0.5Sr_0.5MnO₃ is investigated. Temperature dependent dc and ac magnetic susceptibility, resistivity, magnetoresistance measurements on chemically synthesized (Sm_0.5−xPr_x)Sr_0.5MnO₃ show various unusual features with doping level x=0.15. The frequency independent ferromagnetic to paramagnetic transition at higher temperature (∼191 K) followed by a frequency dependent reentrant magnetic transition at lower temperature (∼31 K) has been observed. The nature of this frequency dependent reentrant magnetic transition is described by a critical slowing down model of spin glasses. From non-linear ac susceptibility measurements it has been confirmed that the finite size ferromagnetic clusters are formed as a consequence of intrinsic phase separation, and undergo spin glass-like freezing below a certain temperature. There is an unusual observation of a 2nd harmonic peak in the non-linear ac susceptibility around this reentrant magnetic transition at low temperature (∼31 K). Arrott plots at 10 and 30 K confirm the existence of glassy ferromagnetism below this low temperature reentrant transition. Electronic- and magneto-transport measurements show a strong magnetic field—temperature history dependence and strong irreversibility with respect to the sweeping of magnetic field. These results are attributed to the effect of phase separation and kinetic arrest of the electronic phase in this phase separated manganite at low temperatures.     

High-throughput screening of magnetic properties of quenched metallic-alloy thin-film composition spreads

A novel method for capturing and characterizing high-temperature phases of metallic-alloys in thin-film composition spreads has been developed. A high-vacuum (10⁻⁸ Torr) high-temperature annealing and quenching furnace system has been developed that allows formation of high-temperature phases in thin-film composition-spread samples deposited on 3 in. silicon wafers. Scanning SQUID microscopy and magneto-optical Kerr effect measurements were used to map the remnant magnetization and the hysteresis loops of the spreads of magnetic materials quenched at high temperatures. The combination of these techniques can be used to obtain comprehensive information on the magnetic properties of various metallic-alloy systems.     

Electron hopping mechanism in hematite (α-Fe2O3)

The frequency dependence of the real (?′) and imaginary (?″) parts of the dielectric constant of polycrystalline hematite (α-Fe₂O₃) has been investigated in the frequency range 0-100 kHz and the temperature range 190-350 K, in order to reveal experimentally the electron hopping mechanism that takes place during the Morin transition of spin-flip process. The dielectric behaviour is described well by the Debye-type relaxation (α-dispersion) in the temperature regions T<233 K and T>338 K. In the intermediate temperature range 233 K<T<338 K a charge carrier mechanism takes place (electron jump from the O²⁻ ion into one of the magnetic ions Fe³⁺) which gives rise to the low frequency conductivity and to the Ω-dispersion. The temperature dependence of relaxation time (τ) in the −ln τ vs 10³/T plot shows two linear regions. In the first, T<238 K, τ increases with increasing T implying a negative activation energy −0.01 eV, and in the second region T>318 K τ decreases as the temperature increases implying a positive activation energy 0.12 eV. The total reorganization energy (0.12-0.01) 0.11 eV is in agreement with the adiabatic activation energy 0.11 eV given by an ab initio model in the literature. The temperature dependence of the phase shift in the frequencies 1, 5, 10 kHz applied shows clearly an average Morin temperature T_Mo=284±1 K that is higher than the value of 263 K corresponding to a single crystal due to the size and shape of material grains.     

Current–voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current–voltage (I−V) measurements in the temperature range 140–300 K. The I–V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) (Φ_B) increases with the increasing temperature. The I–V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal–semiconductor interface. The zero-bias barrier height Φ_B vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of Φ_B=0.615 eV and standard deviation σ_s0=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm⁻² K⁻² and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm⁻² K⁻². This may be due to greater inhomogeneities at the interface.