Observation of surface contamination layer by X‐ray reflectometry (XRR) analyses

Ultra‐thin HfO₂ films of 3.5, 5.0, and 8.0 nm nominal thicknesses were prepared, respectively, on silicon substrates by using atomic layer deposition method. Through the analyses of X‐ray reflectometry (XRR), X‐ray photoelectron spectroscopy, and transmission electron microscopy for HfO₂ films with and without sample cleaning, the effects of surface contamination on XRR curve and film thickness were investigated, and contamination layer was observed and the thickness of the layer was determined. X‐ray photoelectron spectroscopy results indicated that the amount of surface contamination varied considerably because of the surface cleaning. XRR curve shapes and the positions of thickness fringes changed and the thickness from Fourier analyses of the curves were different for the same sample due to the different surface contamination. Contamination layer of about 1 nm thickness was observed by Fourier analysis of XRR curve. Simulation for XRR curve showed the best fit to data when contamination layer of about 1 nm thickness was considered, and the result was consistent with that of the Fourier analysis. Copyright © 2016 John Wiley & Sons, Ltd.     

Clarification by TEM and SIMS of abnormal Ti depth distribution in chemical solution-deposited SrTiO3/La0.5Sr0.5CoO3

A chemical solution-deposited multilayer system of SrTiO3 ("STO")/La0.5Sr0.5CoO3 ("LSCO") on a platinized wafer with a layer sequence Pt/TiO2/SiO2/Si(bulk) has been investigated by dynamic SIMS (secondary ion mass spectroscopy) and TEM (transmission electron microscopy); element determination was performed with EELS (electron energy-loss spectroscopy). The STO layer is intended to serve as a dielectric layer for a microelectronic capacitor; the conducting LSCO layer is a buffer layer intended to eliminate fatigue effects which usually occur at the STO/Pt interface. The SIMS depth profiles obtained for the main components revealed intense diffusion processes which must have occurred during the deposition/crystallization processes. Ti is found to diffuse from the (insulating) STO layer into the conductive LSCO layer where a region of constant concentration is observable. TEM-EELS experiments showed that these Ti plateaus are caused by precipitates approximately 20-80 nm in diameter.     

LiNi_(0.5)Mn_(1.5)O_4正极材料表面的双电子能量损失谱谱学成像

研究锂离子电池电极材料中的化学结构、尤其是Li元素的分布和过渡金属元素的价态分布对理解锂离子电池的电池性能具有重要的意义。尽管电子能量损失谱(EELS)具有对轻元素敏感的特点,但利用EELS观察锂离子电池正极材料中Li这一周期表中最轻的固体元素一直是个挑战。这不仅是由于EELS谱中锂K边与过渡金属M边存在部分重叠,还由于锂离子电池材料的尺寸普遍较大使得EELS分析中复散射的影响变大,影响了Li定量分析的准确性。本文以LiNi_(0.5)Mn_(1.5)O_4(LNMO)正极材料为例,利用扫描透射电子显微镜(STEM)下的双电子能量损失谱仪(Dual EELS)谱学成像技术,获取了LNMO中较为精确的Li、Mn及Ni分布图,并进一步获得了Mn/Ni的价态分布图。结合STEM原子序数衬度像表明,LNMO表面1–2nm深度范围内具有富Mn/Ni而缺Li的特征,且表面Mn(+2)相对于体相Mn(+4)的价态偏低。由于低价态的Mn~(2+)在电解液中的溶解是造成电池容量衰减的重要原因,我们的结果表明在LNMO材料合成中消除材料表面富集的低价态Mn~(2+)可能是将来减小其容量衰减的可行途径。     

六方硼碳氮化合物的溶剂热合成与表征

采用溶剂热合成方法,以无水乙腈、叠氮化钠和四氟硼酸钠为原料,以苯为溶剂,在温度为400℃条件下,成功合成出了硼碳氮(BCN)三元化合物.利用X射线粉末衍射(XRD)、Fourier变换红外光谱(FTIR)、透射电子显微镜(TEM)、选区电子衍射(SAED)、X射线能谱(EDS)和电子能量损失谱(EELS)对合成产物进行了表征.XRD和SAED分析表明,合成产物为六方相,晶格常数为a=0.2678nm,c=0.6639nm;TEM结果表明,合成产物中存在纳米棒和四方柱状块体BCN;EELS和EDS分析表明,产物由B,C,N三种元素组成,化学式为B0.23C0.60N0.17;FTIR分析表明样品中存在C—N,B—C和B—N键,表明B,C,N三元素之间达到了原子级化合.     

EELS spectroscopy of iron fluorides and FeFx/C nanocomposite electrodes used in Li-ion batteries.

A new type of positive electrode for Li-ion batteries has been developed recently based on FeF3/C and FeF2/C nanocomposites. The microstructural and redox evolution during discharge and recharge processes was followed by electron energy loss spectroscopy (EELS) to determine the valence state of Fe by measuring the Fe L3 line energy shift and from Fe L3/L2 line intensity ratios. In addition, transition metal fluorides were found to be electron beam sensitive, and the effect of beam exposure on EELS spectra was also investigated. The EELS results indicate that for both FeF3/C and FeF2/C nanocomposite systems, a complete reduction of iron to FeO is observed upon discharge to 1.5 V with the formation of a finer FeO/LiF subnanocomposite ( approximately 7 nm). Upon complete recharging to 4.5 V, EELS data reveal a reoxidation process to a Fe2+ state with the formation of a carbon metal fluoride nanocomposite related to the FeF2 structure.     

Thickness, surface morphology, and optical properties of porphyrin multilayer thin films assembled on Si(100) using copper(I)-catalyzed azide-alkyne cycloaddition

We report the structure, optical properties and surface morphology of Si(100) supported molecular multilayers resulting from a layer-by-layer (LbL) fabrication method utilizing copper(I)-catalyzed azide-alkyne cycloaddition (CuAAC), also known as "click" chemistry. Molecular based multilayer films comprised of 5,10,15,20-tetra(4-ethynylphenyl)porphyrinzinc(II) (1) and either 1,3,5-tris(azidomethyl)benzene (2) or 4,4'-diazido-2,2'-stilbenedisulfonic acid disodium salt (3) as a linker layer, displayed linear growth properties up to 19 bilayers. With a high degree of linearity, specular X-ray reflectivity (XRR) measurements yield an average thickness of 1.87 nm/bilayer for multilayers of 1 and 2 and 2.41 nm/bilayer for multilayers of 1 and 3. Surface roughnesses as determined by XRR data fitting were found to increase with the number of layers and generally were around 12% of the film thickness. Tapping mode AFM measurements confirm the continuous nature of the thin films with roughness values slightly larger than those determined from XRR. Spectroscopic ellipsometry measurements utilizing a Cauchy model mirror the XRR data for multilayer growth but with a slightly higher thickness per bilayer. Modeling of the ellipsometric data over the full visible region using an oscillator model produces an absorption profile closely resembling that of a multilayer grown on silica glass. Comparing intramolecular distances from DFT modeling with experimental film thicknesses, the average molecular growth angles were estimated between 40° and 70° with respect to the substrate surface depending on the bonding configuration.     

Characterization of multilayers by means of EDXS in the analytical TEM

Referring to the characterization of nanoscale multilayers in cross section, the resolution limits of the EDXS method have been investigated. For that purpose EDXS line scan profiles of nanoscale Fe-Cr multilayers have been calculated assuming an increased specimen thickness and different tilts between electron beam and layer interface. The resolution limit seems to be greater than 2 nm layer thickness for regular multilayers. Experimentally a limit of 5 nm was reached. Received: 30 July 1997 / Accepted: 2 February 1998     

Cross‐sectional structural characterization of the surface of exfoliated HOPG using HRTEM‐EELS

We analyzed the surface atomic structure of highly oriented pyrolytic graphite (HOPG) substrate exfoliated with adhesive tape, using high‐resolution transmission electron microscopy and scanning transmission electron microscopy‐electron energy‐loss spectroscopy (STEM‐EELS). The surface step height of the exfoliated HOPG substrate was determined using high‐angle annular dark‐field‐scanning transmission electron microscopy (HAADF‐STEM) images and the depth profiles of the EELS spectra of a cross‐sectioned thin foil specimen prepared via focused ion beam milling. The exfoliated surface of the HOPG substrate presented disordered and curved graphene layers. The STEM‐EELS measurements indicated that upon exfoliation, the surface of the HOPG substrate reacted with atmospheric water and oxygen molecules.     

Nitridation of V5Al8 films with NH3 by Rapid Thermal Processing (RTP)

V₅Al₈ films (thickness about 100 nm) were deposited on sapphire substrates by RF‐sputtering and nitridated with NH₃ at 600‐1250 °C (1 min) in a RTP system. The as deposited and nitridated films were investigated by ESCA (electron spectroscopy for chemical analysis), XRD (X‐ray diffraction), XRR (X‐ray reflectometry), AFM (atomic force microscopy) and SEM (scanning electron microscopy). Formation of an aluminum nitride layer at the surface and precipitation of V(Al) in the bulk was found. In the temperature regime from 600 °C to 900 °C a considerable amount of oxygen is incorporated in the aluminum nitride layer. The roughness of the surface increased with increasing temperature and at 1250 °C a partially detaching of the AlN layer could be observed.     

Using image resonances to probe molecular conduction at the n-heptane/Au(111) interface

The binding energies and lifetimes of the n=1 image resonance on Au(111) are measured as a function of n-heptane layer thickness by femtosecond time-resolved two-photon photoemission (TR-2PPE) spectroscopy. The lifetime of the image resonance dramatically increases from approximately 4 fs on clean Au(111) to 1.6 ps with three layers of n-heptane. Because the image resonance is above the L1 band edge of Au, this increase in lifetime is attributed to the tunneling barrier presented by the sigma-sigma* band gap of the n-heptane film. We use the one-dimensional dielectric continuum model (DCM) to approximate the surface potential and to determine the binding energies and the lifetimes of the image resonances. The exact solution of the DCM potential is determined in two ways: the first by wave-packet propagation and the second by using a tight-binding Green's function approach. The first approach allows band-edge effects to be treated. The latter approach is particularly useful in illustrating the similarity between TR-2PPE and conductance measurements.     

Structural characterization of a spin-assisted colloid-polyelectrolyte assembly: stratified multilayer thin films

The assembly of polyelectrolytes and gold nanoparticles yields stratified multilayers with very low roughness and high structural perfection. The films are prepared by spin-assisted layer-by-layer self-assembly (LbL) and are characterized by X-ray reflectivity (XRR), UV-vis spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy (TEM). Typical structures have four repeat units, each of which consists of eight double layers (DL) of poly(sodium 4-styrenesulfonate)/poly(allylamine hydrochloride), one monolayer of gold nanoparticles (10 nm diameter), and another layer of poly(allylamine hydrochloride). XRR scans show small-angle Bragg peaks up to seventh order, evidencing the highly stratified structure. Pronounced Kiessig fringes indicate a low global roughness, which is confirmed by local AFM measurements. TEM images corroborate the layered structure in the growth direction and nicely show the distinct separation of the individual particle layers. An AFM study reveals the lateral gold particle distribution within one individual particle layer. Interestingly, the spin-assisted deposition of polyelectrolytes reduces the roughness induced by the particle layers, leading to self-healing of roughness defects and a rather perfect stratification.     

In situ grown nanoscale platinum on carbon powder as catalyst layer in proton exchange membrane fuel cells (PEMFCs)

An extensive study has been conducted on the proton exchange membrane fuel cells (PEMFCs) with reducing Pt loading. This is commonly achieved by developing methods to increase the utilization of the platinum in the catalyst layer of the electrodes. In this paper, a novel process of the catalyst layers was introduced and investigated. A mixture of carbon powder and Nafion solution was sprayed on the glassy carbon electrode (GCE) to form a thin carbon layer. Then Pt particles were deposited on the surface by reducing hexachloroplatinic (IV) acid hexahydrate with methanoic acid. SEM images showed a continuous Pt gradient profile among the thickness direction of the catalytic layer by the novel method. The Pt nanowires grown are in the size of 3 nm (diameter)×10 nm (length) by high solution TEM image. The novel catalyst layer was characterized by cyclic voltammetry (CV) and scanning electron microscope (SEM) as compared with commercial Pt/C black and Pt catalyst layer obtained from sputtering. The results showed that the platinum nanoparticles deposited on the carbon powder were highly utilized as they directly faced the gas diffusion layer and offered easy access to reactants (oxygen or hydrogen).     

Formation of niobium nitride by rapid thermal processing

The formation of group V transition metal nitride films by means of rapid thermal processing (RTP) has been investigated. Here we focus on the nitridation of niobium films of 200-500 nm thickness in the temperature range from 500 to 1,100 degrees C under laminar flow of molecular nitrogen or ammonia. The nitride phases formed were characterized by X-ray diffraction (XRD). Secondary neutral mass spectrometry (SNMS) and transmission electron microscopy (TEM) in combination with electron energy loss spectroscopy (EELS) were carried out on samples of selected experiments to provide more detailed information about the initial stages of nitride formation and the microstructure of the films. A classical formation sequence of nitride phases was observed with increasing nitrogen content in the order: alpha-Nb(N) --> beta-Nb2N --> gamma-Nb4N3 --> delta'-NbN --> Nb5N6. Furthermore, oxide enriched regions were discovered inside the metal films. These turned out to be formed mainly in the nitride sequence between the a-alphaNb(N) and beta-Nb2N-phases at the Nb/SiO2 interface due to a reaction of the Nb with the SiO2 layer of the silicon substrates on which the films had been deposited. The SiO2 layer acts as diffusion barrier for nitrogen but also as source for oxygen, according to SNMS and TEM/EELS studies, resulting in the formation of Nb-oxides and/or oxynitrides at the Nb/SiO2 interface.     

Distribution and thickness of the surface contaminations on STM tungsten tips,studied by AES/SEM and ARXPS

The combination of Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and angle resolved X-ray photoelectron spectroscopy (ARXPS) has been applied to the analysis of the distribution of elements at the surface region of electrochemically etched tungsten tips and the determination of the thickness of a layer with oxygen and carbon contamination. Auger line profiling revealed a homogeneous distribution of oxygen and significant enrichment of carbon on the W tip between 0 and 1.5 m from the top. The thickness of the contamination layer on various W materials, electrochemically etched, was found to be 1.35±0.15 nm as measured using ARXPS, and was estimated to be about 1–3 nm as measured by AES.     

Ultrathin carbon support films for high-resolution electron microscopy of nanoparticles.

We introduce a simple preparation method for ultrathin carbon support films that is especially useful for high-resolution electron microscopy (HREM) of nanoparticles. Oxidized iron nanoparticles were used as a test sample in a demonstration of this method. The film qualities are discussed on the basis of electron-energy-loss spectroscopy (EELS) and image analysis techniques such as thickness maps and histograms. We carried out a comparison between the homemade and commercial film qualities. The relative thickness of the homemade support films was 0.6 times less than that of the commercial films, which was calculated from the EELS analysis, whereas the thicknesses of both carbon support films varied within about 3%. The percentage of the observable area was about 67 +/- 7.6% of the support film. This was about twice as large as the commercial film (32 +/- 9.3%). The HREM image of the sample prepared with our support film improved 9% in brightness and 15% in contrast compared with images obtained with the commercial support.     

应用于局域表面等离激元共振扫描显微探针的球形Au@Ag纳米粒子的合成及介电敏感性检测

局域表面等离激元共振(LSPR)显微探针的检测灵敏性主要取决于针尖上修饰的纳米粒子的LSPR性质.本文采用阴离子辅助法,在水溶液中通过调节Au核与Ag⁺的物质的量之比,实现Au核上不同厚度的Ag壳层包覆,可控地一步合成均一性好、银壳层较厚(≥10 nm)的核壳比不同的球形Au@Ag纳米粒子.通过扫描电镜(SEM)、透射电镜(TEM)及扫描透射电子显微镜X射线能谱(STM-EDS)线扫描分析对不同核壳比的Au@Ag纳米粒子进行形貌组成表征,证实了所合成核壳结构的可控性.将不同核壳比的Au@Ag纳米粒子置于不同折射率溶液中进行纳米粒子介电敏感性的研究,表明7.5 nm Au@28 nm Ag的纳米结构具有最高的品质因子.同时将不同核壳比的Au@Ag纳米粒子置于不同折射率的非导电性基底上进行单颗纳米粒子散射性质的研究,结果表明7.5 nm Au@28 nm Ag纳米粒子适合作为LSPR显微探针的高检测灵敏性纳米结构之一.     

Thin dielectric film thickness determination by advanced transmission electron microscopy.

High-resolution transmission electron microscopy (HR-TEM) has been used as the ultimate method of thickness measurement for thin films. The appearance of phase contrast interference patterns in HR-TEM images has long been confused as the appearance of a crystal lattice by nonspecialists. Relatively easy to interpret crystal lattice images are now directly observed with the introduction of annular dark-field detectors for scanning TEM (STEM). With the recent development of reliable lattice image processing software that creates crystal structure images from phase contrast data, HR-TEM can also provide crystal lattice images. The resolution of both methods has been steadily improved reaching now into the sub-Angstrom region. Improvements in electron lens and image analysis software are increasing the spatial resolution of both methods. Optimum resolution for STEM requires that the probe beam be highly localized. In STEM, beam localization is enhanced by selection of the correct aperture. When STEM measurement is done using a highly localized probe beam, HR-TEM and STEM measurement of the thickness of silicon oxynitride films agree within experimental error. In this article, the optimum conditions for HR-TEM and STEM measurement are discussed along with a method for repeatable film thickness determination. The impact of sample thickness is also discussed. The key result in this article is the proposal of a reproducible method for film thickness determination.     

Surface roughness and electrical conductivity of the SnO2 ultra‐thin layers investigated by X‐ray reflectivity

Spray pyrolysis technique was applied to deposit two sets of ultra‐thin layers of tin dioxide (SnO₂). For the first and second sets, 0.01 and 0.05 molar precursor solutions were prepared, respectively. In both sets, utilizing the X‐ray reflectivity (XRR) technique, the effect of precursor concentration (PC) and precursor volume (PV) on the layer structure are investigated. The layer thickness of the samples, in each set, is a PV‐dependent parameter. For the same PV, samples with higher PC have a larger thickness and higher density. The electron density profiles deduced from XRR data analyses establish a link between measured values of sheet resistance and electron densities. The samples with higher PV and PC show less sheet resistance. The quantum size effect was utilized to show that the surface roughness for layers of more than almost 200 Å of samples in set two plays no role in the layer conductivity. Meanwhile, the same effect explains, adequately, the role of the surface roughness in the resistivity of the ultra‐thin layers in Set 1.