On the angular dependence of gaps in 1-D Si/SiO2 periodic structures

A multilayer of silicon and silicon dioxide was used to study the angular dependence of reflectance maxima originating from interference and bulk optical properties. Silicon dioxide has a lattice resonance in the infrared causing an interval of high reflectance for wavelengths around 9 μm. The multilayer was designed such that the interference maxima do not overlap/interact with the material related reflectance maximum. In this way the different angular behavior for the two types of reflectance maxima can be studied simultaneously. Experimental and calculated reflectance spectra for s- and p-polarized light for angles of incidence between 0° and 90° collected for every 5° are presented. The reflectance features caused by interference generally move to shorter wavelengths with increasing angle of incidence, and the materials related peak is widened for (s-polarized light) and excitation of the longitudinal modes was observed for p-polarized light.     

Control of photonic band gaps in one-dimensional photonic crystals

The photonic band gaps in one-dimensional photonic crystals (PCs) are theoretically investigated. A new method to broaden the photonic band gaps is introduced. Based on the similar method, a kind of photonic crystals is constructed to generate photonic band gaps with proportioned central frequencies. This technology can be used for designing nonlinear PCs for harmonic generation.     

Giant magnetoimpedance in FM/SiO2/Cu/SiO2/FM films at GHz frequencies

We study the magnetic properties at high frequency of new structures of the tri-layer samples. The magnetoimpedance effect was analyzed in FM/i/Cu/i/FM sandwiched layers, where the ferromagnetic layer (FM) is, in fact, a multilayered film [F (10 nm)+Cu (1 nm)]×50 and F is the amorphous ferromagnetic alloy Fe_73.5Cu₁Nb₃Si_13.5B₉ and i is an isolating layer produced by magnetron sputtering. The effect of, both, the probe current frequency (in the range 10 MHz–1.8 GHz) and the dimensions of the magnetic and non-magnetic layers of the MI response were investigated. A comparison between samples with and without the isolating layer is discussed. MI ratios of 220% were obtained for samples at 180 MHz with a ferromagnetic and Cu width layers of 2 and 1 mm, respectively.     

Graphene based photonic crystal optical filter: Design and exploration of the tunability

Optical characteristics of two new graphene based photonic crystals are studied in detail. A structure containing alternating layers of graphene and SiO₂ slabs is considered as the ideal crystal. The dependency of the photonic band gaps (PBGs) to the dielectric layer thickness and the period number is explored at first step. Potential of the proposed crystal to be used as an optical filter is then investigated. Adding a nonlinear electro-optic polymer as a defect layer, the alterations of the optical features are inspected. Results show that the defect layer insertion causes a resonant mode inside the PBGs. However, the location of the defect layer inside the crystal is very effective on both the frequency and width of the resonant mode. Tunability of the optical features is probed by taking into account of the dependencies to the wave incident angle, graphene chemical potential and the applied external voltage to the defect layer.     

Design of photonic band gap structures through a dual-beam multiple exposure technique

We present a dual-beam multiple exposure technique that can generate complex 2-D and 3-D band gap template structures in a photosensitive material. The system parameters related to the planar interference pattern produced by two laser beams and reorientation effect of the sample relative to these planes is presented. Structures such as the 2-D, square and hexagonal arrays of dielectric “rods” and “holes” and the 3-D, cubic, Yablonovite and other profiles are given. We perform band gap calculations on these structures when the dielectric contrast has been increased using a backfill process and discuss techniques for increasing the band gap by sculpting the dielectric profile.     

Geometrically distributed aperiodic circular photonic crystals with broad and isotropic photonic band gaps

In this paper, a new type of circular photonic crystal (CPC) with a geometrical distribution of concentric layers is presented. A broad and isotropic photonic band gap is achieved using this geometrically distributed CPC (GCPC). Also, the influence of the number of concentric layers to the overall band gap of GCPC is studied. It is demonstrated that the band gap broadens with a red shift when the number of concentric layers is increased. The reason for the red shift of the band gap is further investigated.     

Modelling and design of complete photonic band gaps in two-dimensional photonic crystals

In this paper, we investigate the existence and variation of complete photonic band gap size with the introduction of asymmetry in the constituent dielectric rods with honeycomb lattices in two-dimensional photonic crystals (PhC) using the plane-wave expansion (PWE) method. Two examples, one consisting of elliptical rods and the other comprising of rectangular rods in honeycomb lattices are considered with a view to estimate the design parameters for maximizing the complete photonic band gap. Further, it has been shown that complete photonic band gap size changes with the variation in the orientation angle of the constituent dielectric rods.      

Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures

We have developed low temperature formation methods of SiO₂/Si and SiO₂/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO₃ aqueous solutions at 120 °C), an ultrathin (i.e., 1.3-1.4 nm) SiO₂ layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 °C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 °C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO₂ gap-state density, and (iii) high band discontinuity energy at the SiO₂/Si interface arising from the high atomic density of the NAOS SiO₂ layer.For the formation of a relatively thick (i.e., ≥10 nm) SiO₂ layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in ∼40 wt% HNO₃ and azeotropic HNO₃ aqueous solutions, respectively. In this case, the SiO₂ formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO₂ layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO₂ layer is slightly higher than that for thermal oxide. When PMA at 250 °C in hydrogen is performed on the two-step NAOS SiO₂ layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 °C.A relatively thick (i.e., ≥10 nm) SiO₂ layer can also be formed on SiC at 120 °C by use of the two-step NAOS method. With no treatment before the NAOS method, the leakage current density is very high, but by heat treatment at 400 °C in pure hydrogen, the leakage current density is decreased by approximately seven orders of magnitude. The hydrogen treatment greatly smoothens the SiC surface, and the subsequent NAOS method results in the formation of an atomically smooth SiO₂/SiC interface and a uniform thickness SiO₂.     

Electroluminescence from nano-crystalline Si/ SiO2 structures embedded in pn junctions

Phosphorous-doped and boron-doped amorphous Si thin films as well as amorphous SiO₂/Si/ SiO₂ sandwiched structures were prepared in a plasma enhanced chemical vapor deposition system. Then, the p–i–n structures containing nano-crystalline Si/ SiO₂ sandwiched structures as the intrinsic layer were prepared in situ followed by thermal annealing. Electroluminescence spectra were measured at room temperature under forward bias, and it is found that the electroluminescence intensity is strongly influenced by the types of substrate. The turn-on voltages can be reduced to 3 V for samples prepared on heavily doped p-type Si (p⁺-Si) substrates and the corresponding electroluminescence intensity is more than two orders of magnitude stronger than that on lightly doped p-type Si (p-Si) and ITO glass substrates. The improvements of light emission can be ascribed to enhanced hole injection and the consequent recombination of electron–hole pairs in the luminescent nanocrystalline Si/ SiO₂ system.     

可调光子晶体研究进展

可调光子晶体是光子晶体研究中的一个新领域，文章简单介绍了当前可调光子晶体的发展状况，阐述了其调制机理及存在的问题，同时论述了可调光子晶体的发展趋势。     

Complete photonic band gaps in one-dimensional ternary photonic crystals containing single negative materials

Complete photonic band gaps (PBGs) are found in one-dimensional ternary photonic crystals (1D TPCs) composed of an ordinary dielectric and single negative metamaterials. The proposed TPC gives omni directional PBG completely independent of polarizations dependent weekly on angle of incidence. Here the choice of different parameters of TPC is done in such a way so that it eliminates the Brewster's-angle transmission resonance, thus allowing a complete 3D PBG. It exhibits a photonic band or gap near frequencies where either the magnetic permeability or the electric permittivity of the metamaterial changes sign, whose width increases with the increasing angle of incidence. These result from the dispersive properties of the metamaterials and disappear for the particular case of propagation along the stratification direction. The results are discussed in terms of incident angle, layer thickness, dielectric constant of the dielectric material for TE and TM polarizations.     

Influence of hydrogen on PtSiO2Si structures

It is shown that hydrogen in the ambient gives rise to a dipole layer at the PtSiO₂ interface and to drifting charges in the oxide. These reversible effects were studied with internal photoemission, polarisation currents and quasistatic C(V)-measurements.     

Nanostructuring Si surface and Si/SiO2 interface using porous-alumina-on-Si template technology. Electrical characterization of Si/SiO2 interface

In this work, anodic porous alumina thin films with pores in the nanometer range are grown on silicon by electrochemistry and are used as masking material for the nanopatterning of the silicon substrate. The pore diameter and density are controlled by the electrochemical process. Through the pores of the alumina film chemical oxidation of the silicon substrate is performed, leading to the formation of regular arrays of well-separated stoichiometric silicon dioxide nanodots on silicon, with a density following the alumina pores density and a diameter adjustable by adjusting the chemical oxidation time. The alumina film is dissolved chemically after the SiO₂ nanodots growth, revealing the arrays of silicon dioxide dots on silicon. In a next step, the nanodots are also removed, leaving a nanopatterned bare silicon surface with regular arrays of nanopits at the footprint of each nanodot. This silicon surface structuring finds interesting applications in nanoelectronics. One such application is in silicon nanocrystals memories, where the structuring of the oxidized silicon surface leads to the growth of discrete silicon nanocrystals of uniform size. In this work, we examine the electrical quality of the Si/SiO₂ interface of a nanostructured oxidized silicon surface fabricated as above and we find that it is appropriate for electronic applications (an interface trap density below 1–3×10¹⁰ eV⁻¹ cm⁻² is obtained, indicative of the high quality of the thermal silicon oxide).     

Properties of the defect mode in one-dimensional ferroelectric Si/C60 photonic crystals

In the present paper, a novel photonic crystal (PC) defect mode is designed by inserting a ferroelectric material layer (LiNbO₃) into Si/C₆₀ one-dimensional PCs. The band structure of the ferroelectric PCs is numerically analyzed by the transfer matrix method (TMM). The width of the photonic band gap increases by 80 nm and a defect mode appears at a central wavelength of 680 nm when a 150 nm LiNbO₃ layer is inserted into the Si/C₆₀ PC structure. The defect mode in the band gap shifts linearly with the change in electric field. The defect mode shifts by 11.2 nm toward shorter wavelengths when the thin film is subjected to a DC voltage of 1 KV.     

A comparative study of electroluminescence from Ge／SiO2 and Si／SiO2 films

Ge/SiO_2 and Si/SiO_2 films were deposited using the two-target alternation magnetron sputtering technique. The Au/Ge/SiO_2/p-Si and Au/Si/SiO_2/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO_2/p-Si and Au/Si/SiO_2/p-Si structures have rectifying property. All the EL spectra from the two types of the structure have peak positions around 650－660 nm. The EL mechanisms of the structures are discussed.     

Optical bistability at angular incidence in a one-dimensional photonic crystal containing single negative materials

Nonlinear wave propagation is studied theoretically in a one-dimensional photonic band gap structure containing single negative materials. It is found that Kerr nonlinearity is greatly enhanced near the lower edge of a recently explored angular gap for transverse magnetic polarized light. Consequently, optical bistability is achieved at very low values of input intensity in a periodic structure composed of only a few repeating units. The characteristics of optical bistability are affected only slightly with the variation of the incident angle and thickness ratio of the layers. The effect of losses is also found to be relatively insignificant in such a small structure.     

Research on Raman-scattering and Fabrication of Multilayer Thin Film with Different Structures and Components Based on Pt/Ti/Si3N4/SiO2/Si Substrate

选用三水醋酸铅、乙酰基丙酮酸锆、四异丙氧基钛、乙酰丙酮作初始材料,用同样的方法分别制备了锆钛酸铅(PZT)和钛酸铅(PT)两种固体前驱物. 采用改良型的溶胶-凝胶工艺技术,分别在不同的Pt-Ti-Si₃N₄-SiO₂-Si基底上,按照不同的组合方式,制备了三种多层薄膜：PZT、PT/PZT-PZT/PT、PT/PZT/-/PZT/PT. 较详细地讨论了薄膜制备的工艺技术,发现当凝胶通过烧结和干燥后变成固态物质时,薄膜内部存在着较大的残余应力,当薄膜在600 ºC下退火时其内部残余应力可以被减小. 通过拉曼     

Photoluminescence of Si from Si nanocrystal-doped SiO2/Si multilayered sample

A multilayered Si nanocrystal-doped SiO₂/Si (or Si-nc:SiO₂/Si) sample structure is studied to acquire strong photoluminescence (PL) emission of Si via modulating excess Si concentration. The Si-nc:SiO₂ results from SiO thin film after thermal annealing. The total thickness of SiO layer remains 150 nm, and is partitioned equally into a number of sublayers (N = 3, 5, 10, or 30) by Si interlayers. For each N-layered sample, a maximal PL intensity of Si can be obtained via optimizing the thickness of Si interlayer (or d_Si). This maximal PL intensity varies with N, but the ratio of Si to O is nearly a constant. The brightest sample is found to be that of N = 10 and d_Si = 1 nm, whose PL intensity is ∼5 times that of N = 1 without additional Si doping, and ∼2.5 times that of Si-nc:SiO₂ prepared by co-evaporating of SiO and Si at the same optimized ratio of Si to O. Discussions are made based on PL, TEM, EDX and reflectance measurements.     

Interfaces analysis of the HfO2/SiO2/Si structure

The physical and chemical properties of the HfO₂/SiO₂/Si stack have been analyzed using cross-section HR TEM, XPS, IR-spectroscopy and ellipsometry. HfO₂ films were deposited by the MO CVD method using as precursors the tetrakis 2,2,6,6 tetramethyl-3,5 heptanedionate hafnium—Hf(dpm)₄ and dicyclopentadienil-hafnium-bis-diethylamide—Сp₂Hf(N(C₂H₅)₂)₂.The amorphous interface layer (IL) between HfO₂ and silicon native oxide has been observed by the HRTEM method. The interface layer comprises hafnium silicate with a smooth varying of chemical composition through the IL thickness. The interface layer formation occurs both during HfO₂ synthesis, and at the annealing of the HfO₂/SiO₂/Si stack. It was concluded from the XPS, and the IR-spectroscopy that the hafnium silicate formation occurs via a solid-state reaction at the HfO₂/SiO₂ interface, and its chemical structure depends on the thickness of the SiO₂ underlayer.