ZnMgO/n-ZnO/ZnMgO/p-GaN异质结LED的紫外电致发光

利用等离子体辅助分子束外延( P-MBE)技术制备了ZnMgO/n-ZnO/ZnMgO/p-GaN异质结LED.Ni/Au电极与p-GaN、In电极与ZnMgO之间都形成了良好的欧姆接触.在ZnMgO/n-ZnO/ZnMgO/p-GaN异质结器件中观察到了明显的整流特性.异质结的电致发光强度随着注入电流的增大而逐渐增强...     

不同密度银纳米粒子对氧化锌基发光二极管发光的增强

采用分子束外延法制备不同密度的银纳米粒子(AgNPs)修饰的局域表面等离子体共振增强n-ZnO/iZnO/MgO/p-GaN异质结发光二极管(LEDs),并对其电学及光学性质进行表征。结果显示:LEDs中引入适当浓度的AgNPs有利于AgNPs局域表面等离子体激元与ZnO激子相耦合,可以显著提高器件的电致发光性能;随着AgNPs浓度的增加,LEDs发光增强倍数先增大后减小,分析认为这是AgNPs局域表面等离子体共振耦合增强过程和AgNPs的消光过程两者之间相互博弈而导致的结果。     

WSe2/GeS 异质结的增强光致发光

二维半导体材料为纳米尺度的光学性质研究提供了良好的支持. 当将其构筑成异质结时, 界面间的相互作用可以改变原光电性质或产生新的性质, 是二维材料光电子器件功能控制的重要手段. 利用机械剥离法制备WSe2/GeS 异质结, 通过发光光谱研究异质结层间激子的光学性质. 结果表明:p 型 GeS 与弱 n 型 WSe2 构筑成异质结时会产生新的层间激子. 与 GeS 和 WSe2 的荧光发射强度相比, 异质结的层间激子发光强度显著增加. 此研究为设计具有先进光电性能的二维半导体器件提供了思路.     

聚苯胺/ZnO纳米线薄膜材料作为发光层的柔性光电器件 及其发光机理

综合氧化锌纳米线(ZnO NWs)的光学活性与聚苯胺(PANI)的空穴传输特性,设计并制备了一种聚合物/ZnO纳米线电致发光材料,并对其发光特性进行了研究。通过高分子络合软模板法,将有序的单晶ZnO NWs均匀生长在覆有铟锡氧化物(ITO)涂层的柔性聚乙烯对苯二甲酸乙二醇酯(PET)衬底上并嵌入PANI薄膜,获得了电致发光薄膜材料和有机/无机异质结实验器件ITO/(ZnO NWs-PANI)。有机/无机异质结器件电致发光可调,在相对低的开启电压下呈现室温蓝紫外发光,并且ZnO NWs表面覆盖PANI增加了蓝紫外发光的强度和稳定性;而无PANI的ZnO NWs阵列具有450 nm处的缺陷发射峰,这可能是电子从扩展态锌间隙Zn_i到价带的跃迁引起的。这些结果表明,基于PANI/ZnO纳米线的复合材料在柔性光电器件方面的应用极具潜力。     

氧气后处理对氧化锌薄膜紫外发射性质的影响

为了提高ZnO光发射效率和制备p型ZnO,对热处理的氧分压对薄膜的结构、形貌、光致光发射和ZnO/Si异质结的Ⅰ-Ⅴ特性的影响进行了研究.用直流反应溅射法在p型硅衬底上生长ZnO薄膜形成n-ZnO/P-Si异质结.在1000℃下用不同比例的氧和氨热处理,我们发现,在纯氮气中得到的样品有强的紫外发射(390nm),随氧气比例增大,紫外增强,同时绿光也产生并随之增强.但过大的氧分压反而产生多的受主缺陷,使越来越多的激发能量转移到发射能量低的绿光中心,从而使紫外减弱.在纯氧和无氧条件下热处理的俄歇谱表明纯氧下氧过量,而无氧下锌大大过量.ZnO/p-Si异质结的Ⅰ-Ⅴ特性表明,无氧热处理表现为典型的n-ZnO/p-Si异质结;而在纯氧气氛中处理后所得Ⅰ-Ⅴ曲线反向,这表明在高氧压下受主缺陷的产生,表明ZnO薄膜有可能由于高氧压热处理由n型转为p型.     

基于氧化锌纳米线的紫外发光二极管

构建了基于n-ZnO纳米线/p-Si异质结的紫外发光二极管.ZnO纳米线准阵列采用水热法生长于重掺p型Si片上.此法简易，反应温度低，易于大规模生产；其产物ZnO纳米线结晶良好，以c轴为优势取向，光激发下的紫外荧光发射很强.二极管的电学接触采用聚合物填充的In阴极或以氧化铟锡(ITO)玻璃紧压形成阴极.它们的I-V特性体现出良好的二极管性质.在正向偏置电压驱动下，构建的发光二极管可稳定发射波长在387nm的较强的近紫外光和较弱的绿光. 关键词： ZnO纳米线 异质结 电致发光 水热法     

Er3+掺杂对ZnO/GaN发光二极管电致发光性能的调控

采用水热法制备了Er~(3+)掺杂的ZnO纳米棒阵列,通过场发射扫描电镜、X单晶衍射谱仪、透射电镜、微区显微光谱仪等对其形貌结构和发光性能进行了表征。结果表明,掺杂前后ZnO纳米棒的形貌及晶型结构未发生改变,Er~(3+)被均匀地掺杂至ZnO纳米棒中,并未发现形成Er_2O_3;掺杂Er~(3+)后样品的光致发光光谱显示400 nm左右蓝光部分占比先提高后减少,其可见光占比减少归因于Er~(3+)填补了一部分锌空位缺陷,同时抑制了一部分氧空位缺陷。结合荧光寿命光谱分析也可发现其辐射发光部分寿命延长,表明荧光辐射效率提高。最终选取掺杂浓度为30%的单根ZnO纳米棒制备ZnO/GaN异质结发光二极管,与未掺杂Er~(3+)的样品相比,其电致发光强度提高了5倍。本研究可为ZnO基电致发光器件的性能改善提供一种简便可行的方法。     

Er^(3+)掺杂对ZnO/GaN发光二极管电致发光性能的调控EI北大核心CSCD

采用水热法制备了Er^(3+)掺杂的ZnO纳米棒阵列,通过场发射扫描电镜、X单晶衍射谱仪、透射电镜、微区显微光谱仪等对其形貌结构和发光性能进行了表征。结果表明,掺杂前后ZnO纳米棒的形貌及晶型结构未发生改变,Er^(3+)被均匀地掺杂至ZnO纳米棒中,并未发现形成Er_(2)O_(3);掺杂Er^(3+)后样品的光致发光光谱显示400 nm左右蓝光部分占比先提高后减少,其可见光占比减少归因于Er^(3+)填补了一部分锌空位缺陷,同时抑制了一部分氧空位缺陷。结合荧光寿命光谱分析也可发现其辐射发光部分寿命延长,表明荧光辐射效率提高。最终选取掺杂浓度为30%的单根ZnO纳米棒制备ZnO/GaN异质结发光二极管,与未掺杂Er^(3+)的样品相比,其电致发光强度提高了5倍。本研究可为ZnO基电致发光器件的性能改善提供一种简便可行的方法。     

三波段白光有机电致发光器件及其色稳定性的控制

制备并研究了基于3种小分子荧光材料的白光有机电致发光器件。发光层采用红色发光材料DCJTB掺杂绿光材料Alq3构成混合发光层,与OXD-7构成的蓝色发光层形成异质结的结构,并以NPB为空穴注入层。通过改变结构参数详细研究了发射光谱及其色坐标的电场依赖性。通过分析载流子注入/传输特性,控制激子的复合区域等措施得到了色坐标稳定性好、光谱丰富的高性能白光电致发光器件。经过优化的器件结构可以覆盖更大的可见光区域,当电压从9 V增加到13 V时,色坐标仅从CIE(x,y)=(0.364,0.314)偏移到CIE(x,y)=(0.332,0.291),具有较好的色稳定性。     

GaN基异质结缓冲层漏电分析

通过对GaN基异质结材料C-V特性中耗尽电容的比较,得出AlGaN/GaN异质结缓冲层漏电与成核层的关系.实验结果表明,基于蓝宝石衬底低温GaN成核层和SiC衬底高温AlN成核层的异质结材料比基于蓝宝石衬底低温AlN成核层异质结材料漏电小、背景载流子浓度低.深入分析发现,基于薄成核层的异质结材料在近衬底的GaN缓冲层中具有高浓度的n型GaN导电层,而基于厚成核层的异质结材料的GaN缓冲层则呈高阻特性.GaN缓冲层中的n型导电层是导致器件漏电主要因素之一,适当提高成核层的质量和厚度可有效降低GaN缓冲层的背景载流子浓度,提高GaN缓冲层的高阻特性,抑制缓冲层漏电. 关键词： AlGaN/GaN异质结 GaN缓冲层 漏电 成核层     

Low-voltage blue light emission from n-ZnO/p-GaN heterojunction formed by RF magnetron sputtering method

High quality n-ZnO/p-GaN heterojunction was fabricated by growing highly crystalline ZnO epitaxial films on commercial p-type GaN substrates via radio frequency (RF) magnetron sputtering. Low-voltage blue light emitting diode with a turn-on voltage of ∼2.5 V from the n-ZnO/p-GaN heterojunction was demonstrated. The diode gives a bright blue light emission located at ∼460 nm and a low threshold voltage of 2.7 V for emission. Based on the results of the photoluminescence (PL) and electroluminescence (EL) spectra, the origins of the EL emissions were studied in the light of energy band diagrams of ZnO–GaN heterojunction, and may attribute to the radiative recombination of the holes in p-GaN and the electrons injected from n-ZnO, which almost happened on the side of p-GaN layer. These results may have important implications for developing short wavelength optoelectronic devices.     

The influence of ZnO seed layers on n-ZnO nanostructure/p-GaN LEDs

Light-emitting diodes (LEDs) were formed by hydrothermally growing n-ZnO nanostructures on p-GaN with or without seed layers. The performance of the fabricated LEDs was studied. The seed layers not only have a great influence on the morphology and density of the ZnO nanostructures but also determine the lighting bias and emitting mechanism. The LEDs without seed layers and with sputtered seed layers exhibit light emission only under reverse bias, which is believed due to the GaN buffer layer/p-GaN p–n junction. The LEDs with sol–gel seed layers exhibit light emission under both forward and reverse biases. With the increase of the forward bias, the LEDs first demonstrate a red electroluminescence emission coming from the sol–gel seed layers and then demonstrate an orange emission coming from the ZnO nanorods. The sol–gel seed layer and the interface play a very important role in the electroluminescence.     

Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer

Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.     

1000 V p-GaN混合阳极AlGaN/GaN二极管

GaN材料具有优异的电学特性,如大的禁带宽度(3.4 eV)、高击穿场强(3.3 MV/cm)和高电子迁移率(600 cm~2/(V·s)). AlGaN/GaN异质结由于压电极化和自发极化效应,产生高密度(1×10~(13)cm~(-2))和高迁移率(2000 cm~2/(V·s))的二维电子气(2DEG),在未来的功率系统中, AlGaN/GaN二极管具有极大的应用前景.二极管的开启电压和击穿电压是影响其损耗和功率处理能力的关键参数,本文提出了一种新型的具有高阻盖帽层(high-resistance-cap-layer, HRCL)的p-GaN混合阳极AlGaN/GaN二极管来优化其开启电压和击穿特性.在p-GaN/AlGaN/GaN材料结构基础上,通过自对准的氢等离子体处理技术,在沟道区域形成高阻盖帽层改善电场分布,提高击穿电压,同时在阳极区域保留p-GaN结构,用于耗尽下方的二维电子气,调控开启电压.制备的p-GaN混合阳极(p-GaN HRCL)二极管在阴阳极间距Lac为10μm时,击穿电压大于1 kV,开启电压+1.2 V.实验结果表明, p-GaN混合阳极和高阻GaN盖帽层的引入,有效改善AlGaN/GaN肖特基势垒二极管电学性能.     

Improvement in electroluminescence performance of n-ZnO/Ga_2O_3 /p-GaN heterojunction light-emitting diodes

n-ZnO/p-GaN heterojunction light-emitting diodes with and without a Ga2O3 interlayer are fabricated. The electroluminescence （EL） spectrum of the n-ZnO/p-GaN displays a single blue emission at 430 nm originating from GaN, while the n-ZnO/Ga2O3/p-GaN exhibits a broad emission peak from ultraviolet to visible. The broadened EL spectra of n-ZnO/Ga2O3/p-GaN are probably ascribed to the radiative recombination in both the p-GaN and n-ZnO, due to the larger electron barrier （ΔEC=1.85 eV） at n-ZnO/Ga2O3 interface and the much smaller hole barrier （ΔEV=0.20 eV） at Ga2O3/p-GaN interface.     

生长在p-GaAs衬底上的ZnO基异质结二极管电致发光(英文)

利用等离子体辅助分子束外延在p型砷化镓衬底上制备了ZnO异质结发光二极管。实验表明:GaAs与ZnO之间的氧化镁绝缘层能够有效改善器件光电性能,I-V特性的研究表明该器件具有良好的整流特性,开启电压为3 V,电致发光光谱由一个紫外发光峰和一个可见发光带构成,其来源分别为ZnO层中近带边缺陷以及深能级缺陷相关的辐射复合。     

Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunction diodes

ZnO-based heterojunction light emitting diodes (LEDs) with MgZnO barrier layer had been fabricated on the p-Si substrate by metal-organic chemical vapor deposition (MOCVD) technology. The current-voltage (I-V) characteristics exhibited a typical p-n diode behavior. Both ultraviolet (UV) and visible emissions could be detected in the electroluminescence (EL) measurement. The result was compared with the EL spectrum of n-ZnO/p-Si heterojunction LED without MgZnO barrier layer. An improved light extraction efficiency by about 31% was realized owing to the current-blocking effect of MgZnO layer. The result indicated that MgZnO barrier layer can prevent the electrons as expected and realize electron-hole recombination in ZnO layer effectively.     

Tunable electroluminescence from n-ZnCdO/p-GaN heterojunction

By cadmium allowing of zinc oxide, a phosphor-free single-chip white light emission diode based on n-ZnCdO/p-GaN heterostructure has been realized. The white light electroluminescence was produced by the superposition of two intense emission bands, a blue band and a yellow band. The origins of the blue band was contributed by both GaN and ZnCdO, while the yellow band was from the recombination of the holes and the electrons in the interface of GaN and ZnCdO.