Analysis of volume dependence of Grüneisen ratio

Various models on volume dependence of the Grüneisen ratio have been analyzed in the present study. The Sharma model [Mod. Phys. Lett. B 22/31 (2008) 3113] is found to be similar to that used by Nie [Phys. Stat. Sol. (b) 219 (2004) 241] on the basis of approximation made by Jeanloz [J. Geophys. Res. 94 (1989) 5929]. The Nie expression is amended in a manner so that the resulted expression follows the constraint of high pressure thermodynamics in the limit of infinite pressure. The newly developed relationship is applied successfully on materials for which experimental data are accessible such as epsilon-iron, NaCl, Li, Na, and K.     

Extreme compression behaviour of equations of state

The extreme compression (P→∞) behaviour of various equations of state with K′_∞>0 yields (P/K)_∞=1/K′_∞, an algebraic identity found by Stacey. Here P is the pressure, K the bulk modulus, K^′=dK/dP, and K′_∞, the value of K^′ at P→∞. We use this result to demonstrate further that there exists an algebraic identity also between the higher pressure derivatives of bulk modulus which is satisfied at extreme compression by different types of equations of state such as the Birch–Murnaghan equation, Poirier–Tarantola logarithmic equation, generalized Rydberg equation, Keane's equation and the Stacey reciprocal K-primed equation. The identity has been used to find a relationship between λ_∞, the third-order Grüneisen parameter at P→∞, and pressure derivatives of bulk modulus with the help of the free-volume formulation without assuming any specific form of equation of state.     

High‐pressure Raman spectroscopy of nanoparticle polyacetylene in a poly(vinyl‐butyral) matrix

The pressure‐induced Raman shifts of six vibrational bands of 20% and 50% trans‐polyacetylene nanoparticles in poly(vinyl‐butyral) matrix films (NPA/PVB) were studied from 0 to 45 kbar using a diamond anvil cell (DAC). The Raman shifts did not depend on the thickness of the two samples studied. Two of the vibrational bands displayed peak positions that depended on the isomeric compositions, with the 20% trans‐NPA/PVB bands being slightly blue‐shifted relative to the 50% trans‐NPA/PVB bands over the 45 kbar pressure range. The Raman bands of NPA/PVB associated with the trans form initially exhibited a relatively large shift at low pressures (P < 10 kbar) along with a drastic change in their band profile. In order to investigate the relative shielding of the vibrational modes studied, a Grüneisen analysis of the pressure‐induced shifts was conducted by estimating the parameters of the Murnaghan equation of state for solid polyacetylene (PA). Four of the six vibrational modes were found to be sensitive to compression of the interchain void space, while the other two modes were insensitive, indicating that they are relatively shielded from the compression of the sample. Copyright © 2011 John Wiley & Sons, Ltd.     

Raman spectroscopic investigations on transition‐metal dichalcogenides MX2 (M = Mo,W; X = S,Se) at high pressures and low temperature

Transition‐metal dichalcogenides have been investigated using Raman spectroscopy both being off‐resonance and in resonance. The first‐order Raman spectra of MoS₂, MoSe₂, WS₂ and WSe₂ single crystal synthesized by vapor transport technique have been studied as a function of hydrostatic pressure (0–20 GPa) and temperature (80–300 K). Isobaric and isothermal mode‐Grüneisen parameters have been determined from the temperature and pressure‐dependent Raman spectra. The pressure dependence of the chalcogen–chalcogen and metal–chalcogen force constant has been obtained using a central force model. Separation of the temperature dependence of Raman mode wavenumbers into quasi‐harmonic and purely anharmonic contributions using measured high‐pressure Raman data allows us to extract the changes in the phonon wavenumbers arising exclusively due to anharmonic interactions. Copyright © 2014 John Wiley & Sons, Ltd.     

An atomistic model for the simulation of acoustic phonons, strain distribution, and Grüneisen coefficients in zinc-blende semiconductors

An accurate modeling of phonons, strain distributions, and Grüneisen coefficients is essential for the qualitative and quantitative design of modern nanoelectronic and nanooptoelectronic devices. The challenge is the development of a model that fits within an atomistic representation of the overall crystal yet remains computationally tractable. A simple model for introducing the anharmonicity of the interatomic potential into the Keating two-parameter valence-force-field model is developed. The new method is used for the calculation of acoustic phonon and strain effects in zinc-blende semiconductors. The model is fitted to the Grüneisen coefficients for long-wavelength acoustic phonons and reproduces the response to strain throughout the Brillouin zone in reasonable agreement with experiment.