The high-pressure-induced spin-reorientation transition in a ferromagnetic semiconductor Cd<Subscript>0.7</Subscript>Mn<Subscript>0.3</Subscript>GeAs<Subscript>2</Subscript>

The dependences of the longitudinal magnetoresistance (Δρ _zz /ρ₀)(P), transverse magnetoresistance (Δρ _xx /ρ₀)(P), and magnetic susceptibility (χ/χ₀(P)) on hydrostatic pressure P ≤ 7 GPa in the ferromagnetic semiconductor Cd_0.7Mn_0.3GeAs₂ at room temperature were investigated.     

Pressure-induced metamagnetic transition in the Cd<Subscript>0.7</Subscript>Mn<Subscript>0.3</Subscript>GeAs<Subscript>2</Subscript> ferromagnetic semiconductor

The magnetic susceptibility χ/χ₀ and the longitudinal Δρ _zz /ρ₀ and transverse Δρ _xx /ρ₀ magnetoresistances have been measured as functions of the hydrostatic pressure P ≤ 7 GPa at room temperature in the high-temperature ferromagnetic semiconductor Cd_0.7Mn_0.3GeAs₂ with a chalcopyrite structure and the Curie temperature T _c = 355 K. A pressure-induced metamagnetic transition from the low-magnetization state to the high-magnetization state has been observed in Cd_0.7Mn_0.3GeAs₂ near the magnetic ordering temperature. This transition is accompanied by the hysteresis of the magnetic susceptibility and magnetoresistance.     

Low temperature thermoelectric power of LaB6, PrB6 and NdB6

We have measured the thermoelectric power of LaB₆, PrB₆ and NdB₆ in the temperature range 2–20K. PrB₆ and NdB₆ order antiferromagnetically at T_N = 6.99K and 7.74K respectively, whereas LaB₆ is non-magnetic. The thermoelectric power data have a negative maximum near 5.5K in all three hexaborides. This negative peak is thought to be mainly due to phonon drag in LaB₆. In PrB₆ and NdB₆ there is an additional contribution due to magnon drag. It is expected that the high temperature thermoelectric power is mainly due to an electron diffusion term and a contribution due to spin disorder scattering. The thermoelectric power and the resistivity have been compared in the vicinity of T_N. A qualitative similarity in the temperature derivatives of these two quantities has been found for PrB₆ and NdB₆ near T_N.     

Magnetic, electrical, and optical properties of Ca1 ? x Ce x MnO3 ( x ≤ 0.12) single crystals

The magnetic, electrical, and optical properties of Ca_{1 − x} Ce _x MnO₃ (x≤0.12) manganite single crystals are investigated with the aim of revealing the specific features of the multiphase electronic and magnetic state as a function of the cerium concentration and the atmosphere used for growing single crystals. It is found that the concentration dependence of the low-temperature magnetization M(x) of the single crystals is shifted toward the high-concentration range as compared to the corresponding dependence of the polycrystals, which is explained by the predominant cation deficiency. The electrical resistivity and the reflection spectra of the single crystals in the infrared spectral range indicate that charge carriers exhibit a band nature at temperatures close to room temperature. The temperature dependence of the electrical resistivity of the single crystal with x = 0.08, which has the maximum magnetization in the studied series of Ca_{1 − x} Ce _x MnO₃ compounds, unlike polycrystals, exhibits a metallic behavior over the entire temperature range. The G-type antiferromagnetic phase with the Néel and Curie temperatures T _N(G) = T _C = 100 K is characterized by maxima of the electrical resistivity ρ and the magnetoresistance Δρ/ρ = |(ρ₀ − ρ _H )/ρ₀| = 38% in the magnetic field H = 90 kOe. The magnetoresistance Δρ/ρ of the single crystals at cerium concentrations x = 0.10 and 0.12 with variations in temperature exhibit three specific features: near the temperature of charge ordering T _co, near the temperature of the magnetic phase transition to the C-type antiferromagnetic phase T _N(C), and near the temperature of the phase transition to the magnetic charge-ordered phase T _N(MCO). An anomalous temperature dependence of the magnetization is revealed for a single crystal with x = 0.10 grown in oxygen at a pressure of 5 atm, which is explained by the presence of regions with hole conductivity due to cation deficiency. The inhomogeneous electronic and magnetic state is associated with the interrelation of the charge, orbital, and spin orderings. Original Russian Text ? N.N. Loshkareva, A.V. Korolev, N.I. Solin, E.V. Mostovshchikova, S.V. Naumov, N.V. Kostromitina, A.M. Balbashov, 2009, published in Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2009, Vol. 135, No. 1, pp. 98–107.     

Magnetic,electrical, magnetoelectrical,and magnetoelastic properties of La<Subscript>0.9</Subscript>Sr<Subscript>0.1</Subscript>MnO<Subscript>3 − <Emphasis Type="Italic">y</Emphasis></Subscript> manganites

This paper reports on a study of the influence of oxygen deficiency on the magnetization, paramagnetic susceptibility, electrical resistivity, magnetoresistance, and volume magnetostriction of the La_0.9Sr_0.1MnO_{3 − y} manganite with y = 0.03, 0.10, and 0.15. The magnetization M(T) behaves in a complex way with temperature; for T < 80 K, it only weakly depends on T, and at 80 ≤ T ≤ 300 K, the M(T) curve shows a falloff. Within the interval 240 K ≤ T ≤ 300 K, the long-range magnetic order breaks up into superparamagnetic clusters. For T < 80 K, the magnetic moment per formula unit is about one-fourth that which should be expected for complete ferromagnetic alignment of Mn ion moments. Although the composition with y = 0.03, in which part of acceptor centers is compensated by donors (oxygen vacancies), the negative magnetoresistance Δρ/ρ and volume magnetostriction ω are observed to pass through maxima near the Curie point, their values are one to two orders of magnitude smaller than those for the y = 0 composition. In compositions with y = 0.10 and 0.15 with electronic doping, the values of Δρ/ρ and ω are smaller by one to two orders of magnitude than those observed for the y = 0.03 composition. They do not display giant magnetoresistance and volume magnetostriction effects, which evidences the absence of ferrons near unionized oxygen vacancies. This allows the conclusion that the part played by both compensated and uncompensated doubly charged donors consists in forming dangling Mn-O-Mn bonds, which lead to a decrease in the Curie temperature with increasing y and to the formation above it of superparamagnetic clusters of the nonferron type.     

De Haas-van Alphen effect in rare-earth hexaborides (RE=Pr,Nd, Gd)

The de Haas-van Alphen (dHvA) effect has been measured for antiferromagnetic PrB₆, NdB₆, and GdB₆. The dHvA data of PrB₆ and NdB₆ show paramagnetic Fermi surfaces which arise from magnetic breakdown through the small antiferromagnetic gaps in high fields very similar to those of LaB₆. In contrast, the antiferromagnetic Fermi surfaces which arise from new magnetic Brillouin zone boundaries introduced by the magnetic order seem to be very different in PrB₆ and NdB₆, respectively. In GdB₆ dHvA oscillations could be observed for the first time. In all three compounds magnetic phase transitions have been observed in the dHvA measurements in the field range of 10–12 T.Dedicated to Professor Hund on the occasion of his 95th birthday     

Temperature dependence of electric resistance and magnetoresistance of pressed nanocomposites of multilayer nanotubes with the structure of nested cones

Bulk samples of carbon multilayer nanotubes with the structure of nested cones (fishbone structure) suitable for transport measurements, were prepared by compressing under high pressure (∼25 kbar) a nanotube precursor synthesized through thermal decomposition of polyethylene catalyzed by nickel. The structure of the initial nanotube material was studied using high-resolution transmission electron microscopy. In the low-temperature range (4.2–100 K) the electric resistance of the samples changes according to the law ln R ∝ (T ₀/T)^1/3, where T ₀∼7 K. The measured magnetoresistance is quadratic in the magnetic field and linear in the reciprocal temperature. The measurements have been interpreted in terms of two-dimensional variable-range hopping conductivity. It is suggested that the space between the inside and outside walls of nanotubes acts as a two-dimensional conducting medium. Estimates suggest a high value of the density of electron states at the Fermi level of about 5×10²¹ eV⁻¹ cm⁻³. Zh. éksp. Teor. Fiz. 113, 2221–2228 (June 1998)     

Anisotropic magnetoresistance of partially relaxed SrRuO3 films

The SrRuO₃ films (50 nm thick) grown by laser evaporation on (001)(LaAlO₃)_0.3 + (Sr₂AlTaO₆)_0.7 substrates were under partially relaxed biaxial compressive mechanical stresses. The films consisted of crystallites with lateral dimensions of 40–100 nm and a relative azimuthal misorientation of about 0.9°. Ferromagnetic ordering of spins in the SrRuO₃ films was manifested by a change in the slope of the temperature dependence of their electrical resistivity ρ at T ≈ 155 K. For a magnetic field H parallel to the measuring current, the maximum values (∼7.5%) of the magnetoresistance MR = [ρ(μ₀ H = 5 T) − ρ(μ₀ H = 0)]/ρ(μ₀ H = 0) were observed at temperatures of about 100 K. At T = 95 K (μ₀ H = 5 T), the anisotropic magnetoresistance of the films was 8% and increased by a factor of approximately 1.5 with decreasing temperature to 4.2 K.     

Magnetoresistance and Hall effect in La0.8Sr0.2MnO3

A comparative study of the longitudinal ρ _xx and transverse ρ _xy resistivities and magnetic susceptibility χ _ac of La_0.8Sr_0.2MnO₃ single crystals and ceramic samples has been conducted in a wide range of temperatures T=1.7–370 K and magnetic fields, H=0–13.6 T. It turned out that the relation ρ _xy ∼ρ _xx , which is expected to hold in the case of carrier scattering by magnetic fluctuations, applies to the single crystals. In polycrystals, an additional H-dependent contribution to the resistivity tentatively attributed to plane (near grain boundaries) and bulk “defects” of the magnetic sublattice has been detected. The scattering of carriers by these defects does not make a notable contribution to the anomalous Hall effect and magnetic susceptibility χ _ac. As a result, the curve of ρ _xy versus ρ _xx seems to be steeper than a linear dependence. Under the assumption that the materials under investigation are metals with constant carrier concentrations, the conductivity σ=1/ρ _xx due to the critical magnetic scattering calculated in the molecular field approximation reproduces the main features of experimental data, namely, the drop in the amplitude and shift of the resistivity peak near the Curie point with increasing magnetic field H and also a relatively slow change in the derivative dσ/dH with increasing temperature in the region T⩽T _C . The large hole concentration of about two per unit cell derived from Hall measurements indicates that carriers of opposite signs can coexist in these materials. Zh. éksp. Teor. Fiz. 116, 671–683 (August 1999)     

Peculiarities in galvanomagnetic properties of granular YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7−δ</Subscript> high-temperature superconductors in very weak magnetic fields

The character of the evolution of a system of weak links in granular high-temperature superconductors under the action of an external magnetic field H _ext has been studied by measuring the current-voltage characteristics E(j)_{Hext = const}E{(j)_{{H_{ext}} = const}} of YBa₂Cu₃O_{7 − δ} (δ ≈ 0.05) ceramic samples. The measurements have been performed at T = 77.3 K in a range of very weak magnetic fields 0 < H _ext ≲ 0.5H _c2J, where H _c2J is the upper critical field of the Josephson weak links. The results have been used to construct the field dependences of the magnetoresistance Δρ(H _ext) of the superconducting ceramics. It has been established that the parameters of the power equation E = A(j − j _cJ)^ν and the magnetoresistance Δρ are nonmonotonic functions of the external magnetic field. The presence of extrema in the curves A(H _ext), j _cJ(H _ext), ν(H _ext), and Δρ(H _ext) indicates that different systems of weak links between grain boundaries, which are capable of forming extended Josephson contacts, undergo sequential transitions to a resistive state with an increase in H _ext.     

Kinetic phenomena in zero-gap semiconductors CuFeS<Subscript>2</Subscript> and CuFeTe<Subscript>2</Subscript>: Effect of pressure and heat treatment

Electrical resistivity ρ and Hal coefficient R are measured as a function of the temperature (T = 1.7−310 K) and the magnetic field (up to H = 28 kOe) in zero-gap semiconductor CuFeS₂ samples subjected to hydrostatic compression and under various heat-treatment conditions. At low temperatures, anomalies are observed in the kinetic effects related to the presence of ferromagnetic clusters: the magnetoresistance at T = 4.2 K and T = 20.4 K acquires a hysteretic character and thermopower α changes its sign at T < 15 K. The temperature dependence of conduction-electron concentration n in CuFeS₂ has a power form in the temperature range T = 14−300 K, which is characteristic of the intrinsic conductivity in zero-gap semiconductors. In CuFeS₂, we have n(T) ∝ T ^1.2; in isoelectron compound Cu_1.13Fe_1.22Te₂, we have n(T) ∝ T ^1.93. Heat treatment is found to affect the intrinsic conductivity of CuFeS₂, as the action of hydrostatic compression (carrier concentration changes); that is, the carrier concentration changes. However, a power form of the n(T) and ρ(T) dependences is retained.     

Preparation, magnetoresistance and magnetocaloric effect of two-layered perovskite La 2.5- x K 0.5+ x Mn 2 O 7+δ

Polycrystalline two-layered perovskite La_2.5-xK_0.5+xMn₂O _{7 + δ} (0 < x < 0.5) samples have been prepared by a modified sol-gel method and their magnetoresistance and magnetocaloric effects have been studied. A large deviation between the metal-insulator (MI) transition temperature (T _ρ ) and the magnetic transition temperature (T_C) is observed. Large magnetoresistance (MR) effects with Δρ/ρ of ∼40% at 12 kOe are obtained in wide temperature ranges. The maximum of the magnetic entropy change peaks at its Curie temperature (T_C), far above its MI transition temperature (T _ρ ). The large magnetic entropy change (∼1.4 J/kg.K) is obtained in the sample La_2.5-xK_0.5+xMn₂O _{7 + δ} (x = 0.35) upon 10 kOe applied magnetic field. Received 2 May 2002 / Received in final form 1st October 2002 Published online 19 December 2002 RID="a" ID="a"e-mail: wzhong@ufp.nju.edu.cn     

Monte Carlo test of the Goldstone mode singularity in 3D XY model

Monte Carlo simulations of magnetization and susceptibility in the 3D XY model are performed for system sizes up to L=384 (significantly exceeding the largest size L=160 considered in work published previously), and fields h ≥ 0.0003125 at two different coupling constants β=0.5, and β=0.55 in the ordered phase. We examine the prediction of the standard theory that the longitudinal susceptibility χ_∥ has a Goldstone mode singularity such that χ_∥ ∝h^-1/2 holds when h↦0. Most of our results, however, support another theoretical prediction that the singularity is of a more general form χ_∥ ∝h^ρ-1, where 1/2<ρ<1 is a universal exponent related to the ∼h^ρ variation of the magnetization.     

Magnetoresistance of the semiconducting spinelide Cu0.625Ga0.375Cr2Se4 having a low-temperature long-range magnetic order-spin glass transition

A study is reported of the dependence of magnetoresistance Δρ/ρ on the square of magnetization σ ² of the semiconducting spinelide Cu_0.625Ga_0.375Cr₂Se₄, which exhibits a low-temperature transition from long-range magnetic order (LRMO) to the spin glass (SG) state in strong magnetic fields. It is shown that at the freezing temperature T _f the Δρ/ρ(σ ²) relations change their slope, and that below T _f this slope is about one half that for T>T f. This finding, together with the earlier observation that the freezing temperature does not depend on the frequency of the ac magnetic field in which it was measured, suggests that the spin-glass phase consists of spins of individual Cr³⁺ ions, and that the SG-LRMO crossover is a phase transition. Fiz. Tverd. Tela (St. Petersburg) 40, 315–317 (February 1998)     

Relationship between the magnetoresistance and the magnetocaloric effect in La<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ag<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>MnO<Subscript>3</Subscript> manganites

A generalized expression relating the magnetoresistance of manganites La_{1 − x} Ag _x MnO₃ with the change in the magnetic entropy has been proposed. The correct inclusion of the acting mechanisms of appearance of the magnetoresistance is shown to lead to adequate agreement between the experimental and calculated values of ΔS _M .     

Possible manifestation of spin fluctuations in the temperature behavior of the resistivity of Sm<Subscript>1.85</Subscript>Ce<Subscript>0.15</Subscript>CuO<Subscript>4</Subscript> thin films

A pronounced step-like (kink) behavior in the temperature dependence of resistivity ρ(T) is observed in the optimally doped Sm_1.85Ce_0.15CuO₄ thin films around T _sf = 87 K and attributed to the manifestation of strong-spin fluctuations induced by Sm³⁺ moments with the energy ħω_sf = k _B T _sf ≃ 7 meV. The experimental data are found to be well fitted by the residual (zero-temperature) ρ_res, electron-phonon ρ_e-ph(T) = AT, and electron-electron ρ_e-e(T) = BT ² contributions in addition to the fluctuation-induced contribution ρ_sf(T) due to thermal broadening effects (of the width ω_sf). According to the best fit, the plasmon frequency, impurity scattering rate, electron-phonon coupling constant, and Fermi energy are estimated as ω_p = 2.1 meV, τ ₀ ⁻¹ = 9.5 × 10⁻¹⁴ s⁻¹, λ = 1.2, and E _F = 0.2 eV, respectively. The text was submitted by the authors in English.     

Transport properties of NdBa2Cu3O6+x ceramics at the edge of the superconducting region upon a decrease in carrier density as a result of oxygen disordering in the Cu-O x planes

An initially nonsuperconducting ceramic sample with the composition NdBa₂Cu₃O_6+x is brought, by means of pressure and quenching, to a state with a high carrier density and a superconducting transition, after which it is returned to the initial state by gradual annealing in several steps. The evolution of the magnetoresistance of the sample showed that even in the most resistive state realized in the experiment the superconducting interaction influences the resistance of the sample at fields all the way up to 5–6 T. In an 8 T field the change in resistance in this state in the temperature interval from 0.4 K to 20 K is described well by a logarithmic law ΔR∝ logT. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 6, 475–480 (25 March 1997)     

Large magnetocaloric effect and magnetoresistance behavior in Gd4Co3

We report a large entropy change (ΔS) below 300 K, peaking near T _C = 220 K, due to isothermal change of magnetic field, for Gd₄Co₃, with a refrigeration capacity higher than that for, say, LaFe_11.4Si_1.6, ordering magnetically in the same temperature range. A noteworthy finding is that the isothermal magnetization is nonhysteretic — an important criterion for magnetic refrigeration without loss. ΔS behavior is also compared with that of magnetoresistance.     

Fractal simulation of the resistivity and capacitance of arsenic selenide

The temperature dependences of the ac resistivity R and ac capacitance C of arsenic selenide were measured more than four decades ago [V. I. Kruglov and L. P. Strakhov, in Problems of Solid State Electronics, Vol. 2 (Leningrad Univ., Leningrad, 1968)]. According to these measurements, the frequency dependences are R ∝ ω^{−0.80±0.01} and ΔC ∝ ω^{−0.120±0.006} (ω is the circular frequency and ΔC is measured from the temperature-independent value C ₀). According to fractal-geometry methods, R ∝ ω^1−3/h and ΔC ∝ ω^−2+3/h , where h is the walk dimension of the electric current in arsenic selenide. Comparison of the experimental and theoretical results indicates that the walk dimensions calculated from the frequency dependences of resistivity and capacitance are h _R = 1.67 ± 0.02 and h _C = 1.60 ± 0.08, which are in agreement with each other within the measurement errors. The fractal dimension of the distribution of conducting sections is D = 1/h = 0.6. Since D < 1, the conducting sections are spatially separated and form a Cantor set.     

Interlayer magnetotransport study in electron-doped Sm2−x Ce x CuO4−δ

Vortex and pseudogap states in electron-doped Sm_2−x Ce _x CuO_4−δ (x ∼ 0.14) are investigated by the interlayer transport in magnetic fields up to 45 T. To extract intrinsic properties, we fabricated small 30 nm-high mesa structures, sufficiently thin to be free of the recently reported partial decomposition problems. On cooling, the c-axis resistivity ρ_c of the mesa structures reveals a semiconductive upturn above T_c, followed by a sharp superconducting transition at 20 K. When the magnetic fieldH is applied along the c-axis, ρ_c(T) shows a parallel shift without significant broadening, as also observed in the hole-doped underdoped cuprates. Above the transition we observe negative magnetoresistance (MR), which can be attributed to the field suppression of the pseudogap, whose magnitude is as small as 38 K. Our results in thex ∼ 0.14 samples closely correspond to the interlayer transport behavior in the ‘overdoped’ regime of hole-doped Bi₂Sr₂ CaCu₂ O_8+y.