Self-magnetism and Persistent Photoconductivity

Persistent photoconductivity has been investigated by various models, among which the Macroscopic Barrier model, Large-Lattice-Relaxation model, and Random Local Potential Fluctuations model are mostly well known. Although the three well-known models have played important roles in describing the persistent photoconductivity, they are not the principal cause of persistent photoconductivity. In this paper a classical model originated from ＂selfmagnetism of electron gas＂ is proposed to illustrate the persistent photoconductivity phenomenon. This classical model is based on electron gas pulsation, which depends on the charge density. Different concentrations of current carriers create different frequencies in the system, and thus the system is sensitive to different wave lengths of incident light. Then the construction of different detectors can be possible for different wave lengths of incident light.     

Influence of a two-dimensional electron gas on current—voltage characteristics of Al0.3{Ga}0.7 N/GaN high electron mobility transistors

The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors（HEMTs） are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas（2DEG） in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region（about 5 nm）.For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.     

High-mobility two-dimensional electron gases at oxide interfaces： Origin and opportunities

Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas(2DEG)at oxide interfaces.Due to the presence of oxygen vacancies at the SrTiO3surface,metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3has Al,Ti,Zr,or Hf elements at the B sites.Furthermore,relying on interface-stabilized oxygen vacancies,we have created a new type of 2DEG at the heterointerface between SrTiO3and a spinelγ-Al2O3epitaxial film with compatible oxygen ion sublattices.This 2DEG exhibits an electron mobility exceeding 100000 cm2·V 1·s 1,more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces.Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.     

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AIN/GaN heterostructure field-effect transistors

By making use of the quasi-two-dimensional （quasi-2D） model, the current-voltage （l-V） characteristics of In0AsA10.82N/A1N/GaN heterostructure field-effect transistors （HFETs） with different gate lengths are simulated based on the measured capacitance-voltage （C-V） characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas （2DEG） with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm2/V.s for the prepared In0.38AI0.82N/A1N/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher.     

Stability and electronic structure studies of LaAIO3/SrTiO3 （110） heterostructures

The first-principles calculations are employed to investigate the stability, magnetic, and electrical properties of the oxide heterostructure of LaAIO3/SrTiO3 （110）. By comparing their interface energies, it is obtained that the buckled interface is more stable than the abrupt interface. This result is consistent with experimental observation. At the interface of LaAIO3/SrTiO3 （110） heterostructure, the Ti-O octahedron distortions cause the Ti tzg orbitals to split into the two- fold degenerate dxz/dyz and nondegenerate dxy orbitals. The former has higher energy than the latter. The partly filled two-fold degenerate t2g orbitals are the origin of two-dimensional electron gas, which is confined at the interface. Lattice mismatch between LaA103 and SrTiO3 leads to ferroelectric-like lattice distortions at the interface, and this is the origin of spin-splitting of Ti 3d electrons. Hence the magnetism appears at the interface of LaAIO3/SrTiO3 （110）.     

De Haas-van Alphen Effect of Free Electron Gas Revisited

The free electron gas in a uniform magnetic field at low temperature is restudied. The grand partition function previously obtained by Landau＇s quantitative calculation contains three parts, which are all approximate. An improved calculation is presented, in which two of the three parts are obtained in exact forms. A simple remedy for Landau and Lifshitz＇s qualitative calculation in the textbook is also given, which turns the qualitative result into the same one as obtained by the improved quantitative calculation. The chemical potential is solved approximately and the thermodynamic quantities are caiculated explicitly in both a weak field and a strong field. The thermodynamic quantities in a strong field obtained here contain both non-oscillating and oscillating corrections to the corresponding results derived from Landau＇s grand partition function. In particular, Landau＇s grand partition function is not sufficiently accurate to yield our nonzero results for the specific heat and the entropy. An error in the Laplace-transform method for the problem is corrected. The results previously obtained by this method are also improved.     

Influence of the photon beam position on incident SR intensity at the SXMCD endstation

A small fluctuation of the photon beam position will affect the intensity and polarization characteristics of synchrotron radiation （SR） when it enters an endstation through the related beamline. In this paper, by changing the electron orbit equilibrium position in the vertical direction, we have measured the corresponding changes in the absorption strength of the SR with a gold mesh in different chopper aperture positions. It is found that for three aperture positions, the absorption intensity of the gold mesh shows a good Gaussian distribution as the photon beam position moves, while the ratio of the SR intensity passing through the upper and lower apertures shows a monotonous variation. This suggests a new method for estimating the circular polarization degree of SR originating from the bending magnet based on our current measurement.     

Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition

Based on X-ray photoelectron spectroscopy （XPS）, influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition （ALD） are investigated in this paper. The measured valence band offset （VBO） value for H2O-based HfO2 increases from 3.17 eV to 3.32 eV after annealing, whereas the VBO value for O3-based HfO2 decreases from 3.57 eV to 3.46 eV. The research results indicate that the silicate layer changes in different ways for H2O-based and O3-based HfO2 films after the annealing process, which plays a key role in generating the internal electric field formed by the dipoles. The variations of the dipoles at the interface between the HfO2 and SiO2 after annealing may lewd the VBO values of H2O-based and O3-based HfO2 to vary in different ways, which fits with the variation of fiat band （VFB） voltage.     

In situ X-ray diffraction investigation of compression behavior in Gd40Y16Al24Co20 bulk metallic glass under high pressure with synchrotron radiation

The compression behavior of the heavy RE-based BMC Gd40Y16Al24Co20 under high pressure has been investigated by in situ high pressure angle dispersive X-ray diffraction measurements using synchrotron radiation in the pressure range of 0-33.42 GPa at room temperature. By fitting the static equation of state at room temperature, we find the value of bulk modulus B is 61.27±4 GPa which is in good agreement with the experimental study by pulse-echo techniques of 58 GPa. The results show that the amorphous structure in the heavy RE-based BMG Gd40Y16Al24Co20 keeps quite stable up to 33.42 GPa although its compressibility is as large as about 33%. The coexistence of normal local structure similar to that of other BMGs and covalent bond structure similar to those of oxide glasses may be the reason for the anomalous property under high pressure of the Gd4oY16Al24Co2o BMG.     

High pressure X-ray diffraction study of CaMnO3 perovskite

Using a diamond anvil cell device and synchrotron radiation,the in-situ high-pressure structure of CaMnO3 has been investigated.In the pressure up to 36.5 GPa,no pressure-induced phase transition is observed.The pressure dependence on the lattice parameters of CaMnO3 is reported,and the relationship of the axial compression coefficients is βa 〉 βc 〉 βb.The isothermal bulk modulus K298=224（25） GPa is also obtained by fitting the pressure-volume data using the Murnaghan equation of state.     

Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge （001） at low temperature

We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge （001） by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.     

Small-angle X-ray analysis of the effect of grain size on the thermal damage of octahydro-1, 3, 5, 7-tetranitro-1, 3, 5, 7 tetrazocine-based plastic-bounded expolsives

The microstructure evolution of plastic-bonded explosives(PBXs) after thermal stimulus plays a key role in PBX performance. In this paper, the nanoscale pores of thermal-treated octahydro-1,3,5,7-tetranitro-1,3,5,7 tetrazocine(HMX)-based PBXs with different HMX particle sizes [approximately 40(FHP) and 100 μm(LHP)] were measured using smallangle X-ray scattering(SAXS). No obvious pore variations were found in the LHP samples heated at 160℃ for 6 h,whereas the amount of pores of FHP decreased when subjected to 160℃ for 6 h. At 180℃, the average pore radii of FHP and LHP decreased from approximately 45 nm to 25 nm, and the total pore volume increased distinctively because of phase transformation. The LHP sample reached a high level of pore content after being held at 180℃ for 1 h, whereas FHP required 3 h. Both FHP and LHP had relatively high pore volumes when subjected to 200℃ for 1 and 3 h.     

Charge state effect on the K-shell ionization of iron by xenon ions near the Bohr velocity

Fe K-shell ionization cross sections induced by 2.4–6.0 MeV Xe20+are measured and compared with different binaryencounter-approximation(BEA)models.The results indicate that the BEA model corrected both by the Coulomb repulsion and by the effective nuclear charge(Zeff)agrees well with the experimental data.Comparison of Fe K-shell X-ray emission induced by 5 MeV xenon ions with different initial charge states(20+,22+,26+,30+)verifies the applicability of the effective nuclear charge(Zeff)correction for the BEA model.It is found that Zeffcorrection is reasonable to describe direct ionization induced by xenon ions with no initial M-shell vacancies.However,when the M shell is opened,the Zeffcorrected BEA model is unable to explain the inner-shell ionization,and the electron transfer by molecular-orbital promotion should be considered.     

Electronic Structure Analysis of USiO4

Uranium is a member of Actinides and plays important role in nuclear science and technology. Electronic and structural investigations of actinide compounds attract major interest in science. The electronic structure and chemical bonding of coffinite USiO4 are investigated by X-ray Absorption Fine Structure spectroscopy （XAFS）. U L3- edge absorption spectrum in USiO4 is compared with U L3-edge spectra in UO2 and UTe due to their different electronic and chemical structures. The study presents XANES （x-ray Absorption Near-Edge Structure） and Extended XAFS （EXAFS） calculations of USiO4 thin films. The full multiple scattering approach has been applied to the calculation of U L3 edge XANES spectra of USiO4, UO2 and UTe, based on different choices of one electron potentials according to Uranium coordinations by using the real space multiple scattering method FEFF 8.2 code.     

Electron Acceleration and Bunch Generation by Intense Femtosecond Laser Pulse in Preplasma of a Target

We present analytical studies of electron acceleration in the low-density preplasma of a thin solid target by an intense femtosecond laser pulse. Electrons in the preplasma are trapped and accelerated by the ponderomotive force as well as the wake field. Two-dimensional particle-in-cell simulations show that when the laser pulse is stopped by the target, electrons trapped in the laser pules can be extracted and move forward inertially. The energetic electron bunch in the bubble is unaffected by the reflected pulse and passes through the target with small energy spread and emittance. There is an optimal preplasma density for the generation of the monoenergetic electron bunch if a laser pulse is given. The maximum electron energy is inverse proportion to the preplasma density.     

Enhanced electron positron pair creation by the frequency chirped laser pulse

Based on the quantum Vlasov equation, the effect of frequency chirp on electron-positron pair production is investigated. The cycle parameter, which characterizes the laser field cycle degree within the pulse, is also considered. In both supercycle and subcycle laser pulses the frequency chirp can greatly enhance the momentum distribution function of created pairs and the pair number density. The pair number density created by a supercycle laser pulse is larger than that by a subcycle pulse under the same laser frequency and chirping. There exists an optimal cycle parameter corresponding to the maximum value of the created pair number density for different chirp rates. It is found that the pair number density is sensitive/insensitive to chirping rate when the cycle parameter lies below/above the optimal one.     

A double toroidal analyzer for scanning probe electron energy spectrometer

An ultra-high vacuum(UHV) compatible electron spectrometer employing a double toroidal analyzer has been developed. It is designed to be combined with a custom-made scanning tunneling microscope(STM) to study the spatially localized electron energy spectrum on a surface. A tip–sample system composed of a piezo-driven field-emission tungsten tip and a sample of highly ordered pyrolytic graphite(HOPG) is employed to test the performance of the spectrometer.Two-dimensional images of the energy-resolved and angle-dispersed electrons backscattered from the surface of HOPG are obtained, the performance is optimized and the spectrometer is calibrated. A complete electron energy loss spectrum covering the elastic peak to the secondary electron peaks for the HOPG surface, acquired at a tip voltage of-140 V and a sample current of 0.5 pA, is presented, demonstrating the viability of the spectrometer.     

The variation of Mn-dopant distribution state with x and its effect on the magnetic coupling mechanism in Znl-xMnxO nanocrystals

Zn1-xMnxO （x = 0.0005, 0.001, 0.005, 0.01, 0.02） nanocrystals are synthesized by using a wet chemical process. The coordination environment of Mn is characterized by X-ray photoelectron spectroscopy, Raman spectroscopy, and its X-ray absorption fine structure. It is found that the solubility of substitutional Mn in a ZnO lattice is very low, which is less than 0.4%. Mn ions first dissolve into the substitutional sites in the ZnO lattice, thereby forming Mn2＋O4 tetrahedral coordination when x ≤ 0.001, then entering into the interstitial sites and forming Mn3＋O6 octahedral coordination when x ≥ 0.005. All the samples exhibit paramagnetic behaviors at room temperature, and antiferromagnetic coupling can be observed below 100 K.     

Numerical simulation for all-optical Thomson scattering X-ray source

Energy spectra, angular distributions, and temporal profiles of the photons produced by an all-optical Thomson scat- tering X-ray source are explored through numerical simulations based on the parameters of the SILEX-I laser system （800 nm, 30 fs, 300 TW） and the previous wakefield acceleration experimental results. The simulation results show that X-ray pulses with a duration of 30 fs and an emission angle of 50 mrad can be produced from such a source. Using the optimized electron parameters, X-ray pulses with better directivity and narrower energy spectra can be obtained. Besides the electron parameters, the laser parameters such as the wavelength, pulse duration, and spot size also affect the X-ray yield, the angular distribution, and the maximum photon energy, except the X-ray pulse duration which is slightly changed for the case of ultrafast laser-electron interaction.     

Physical design of a wavelength tunable fully coherent VUV source using a self-seeding free electron laser

In order to meet the requirements of the synchrotron radiation users, a fully coherent VUV free electron laser （FEL） has been preliminarily designed. One important goal of this design is that the radiation wavelength can be easily tuned in a broad range （70 170 nm）. In the light of the users＇ demand and our actual conditions, the self-seeding scheme is adopted for this proposal. Firstly, we attempted to fix the electron energy and only changed the undulator gap to vary the radiation wavelength; however, our analysis implies that this is difficult because of the great difference of the power gain length and FEL efficiency at different wavelengths. Therefore, we have considered dividing the wavelength range into three subareas. In each subarea, a constant electron energy is used and the wavelength tuning is realized only by adjusting the undulator gap. The simulation results show that this scheme has an acceptable performance.