杂质态束缚极化子效应对量子线中三次谐波振荡的影响

本文就杂质束缚极化子效应对量子线中三次谐波振荡的影响作了理论计算.利用量子力学中的密度矩阵算符理论导出了该系统中三次谐波振荡的解析表达式.最后以典型的GaAs量子线为例作了数值计算.     

Electrons in a curvilinear quantum wire

The adiabatic motion of electrons in curvilinear quantum wires was studied. It was assumed that the cross section of a wire was constant along its length. The potential that limited electron motion across a wire and the shape of the cross section of the wire were considered arbitrary, while the curvature and the torsion (defined as the derivative of the cross section rotation angle with respect to the length) were assumed to be small. An effective nonrelativistic Hamiltonian for the motion of electrons along a wire with the conservation of transverse quantum numbers was obtained. The spin-orbit coupling Hamiltonian related to the curvature and torsion of a wire was found. Particular cases of a rectilinear twisted quantum wire with a noncircular cross section and a curvilinear quantum wire on a plane were studied. Various transverse potential models limiting the motion of electrons were considered. In particular, the coefficients of the effective Hamiltonian for quantum wires with rectangular and circular cross sections and hard walls and for wires with a parabolic potential were found.     

表面光学声子对柱形量子线中三次谐波振荡的影响

本文利用密度矩阵方法研究了表面光学声子对柱形量子线中三次谐波振荡的影响,并且导出了三次谐波振荡的表达式。然后,以GaAs柱形量子线为例作了数值计算。研究表明,当柱形量子线的横向半径d非常小时,电子和表面光学声子之间的耦合强度就非常大,表面光学声子对三次谐波振荡的影响就更强。     

A study for the cartography of the interface roughness of V-shaped AlGaAs/GaAs quantum wires

We present a theoretical study for the cartography of the interface roughness of AlGaAs/ GaAs V-shaped quantum wires which is reflected on the photoluminescence and micro-photoluminescence spectra of these structures. The model developed is based on the existence of microscopic compositional fluctuations at the interfaces. The fine structure of the micro-photoluminescence spectrum is attributed to localized excitonic states in island-like fluctuations which act as quantum boxes distributed along the free direction of the wire. The fluctuation of the concentration of these boxes together with the estimation of their sizes are used to explain the evolution of the signals along the wire axis and to produce the overall photoluminescence spectrum. The model is applied to a V-shaped Al_0.3Ga_0.7As/GaAs quantum wire and reproduces successfully the observed photoluminescence and micro-photoluminescence characteristics.     

Effect of barrier thickness on strain uniformity of wire in laterally aligned InGaAs/GaAs quantum wire nanostructures

The effect of barrier thickness on strain uniformity of a laterally aligned array of InGaAs quantum wire in GaAs matrix has been investigated with the finite elements method. A decrease in GaAs barrier thickness was predicted to assist the InGaAs wire to maintain its strain state in the central region up to a longer distance towards the edge of the wire along the width direction. It is suggested that, by reducing the spacing between the quantum wires, it is possible to improve uniformity of strains within the wire, thereby yielding more uniform opto-electronic properties such as sharp and narrow peaks in photoluminescence spectra.     

Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs（311） A Substrate by molecular eam epitaxy

Atomic hydrogen assisted molecular beam epitaxy (MBE) is a novel type of epitaxial growth of nanostructures. The GaAs (311)A surface naturally forms one-dimensional step arrays by step bunching along the direction of 〈-233〉 and the space period is around 40nm. The step arrays extend over several μm without displacement. The InGaAs quantum wire arrays are grown on the step arrays as the basis. Our results may prompt further development of more uniform quantum wire and quantum dot arrays.     

Green’s function approach to transport in quantum wires with rough surfaces

By including the scattering from bulk impurities and rough surface, a Green’s function approach to transport in a quasi-one-dimensional cylindrical wire is presented. Taking into account the quantum size effects (QSE), we calculate the one-particle Green’s function and the electrical conductivity along a quantum wire, yielding a new formula for the conductivity in quantum wires. It is shown that the conductivity exhibits certain oscillation in the region of very small radius of wires where the QSE are manifestly important, and its envelope decreases with decreasing the radius.     

Energy sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire

We report the successful fabrication of a V-grooveAl_0.5Ga_0.5As/GaAs/Al_0.5Ga_0.5As quantum wire system and the temperature-dependent photoluminescence (PL) measurement. The PL spectra are dominated by four features at 681, 642, 635 and 621 nm attributed to the luminescences from quantum wire, top, vertical and side-wall well regions by micro-PL measurements. By the calculations of the energy structure, discrete states (localized sublevels) in the quantum wire region and continuum states (extended along the side-wall and vertical quantum wells) in side-wall and vertical quantum wells have been obtained in both the conduction and valence bands. The calculated excitation energies explain very well the peak positions and their temperature dependence in the photoluminescence measurements.     

Charge Hall effect generated by spin-polarized current injected into Rashba spin orbit coupling media

Using the Keldysh Green’s function method, we study theoretically the electron accumulation induced by the inverse spin Hall effect in a spin valve structure in which a clean quantum wire formed from a 2D electron gas (2DEG) with Rashba/Dresselahaus spin orbit interaction (SOI) is connected to two ferromagnet electrodes. In a nonequilibrium situation when a spin current with an out-of plane (the 2DEG plane) spin polarization is driven through the SOI region by an external voltage, non-equilibrium electron accumulation or a Hall voltage forms at the two lateral sides of the quantum wire and exhibits an oscillation along the wire like the Rashba spin precession; the magnetization directions of FMs affect the Hall voltage and their parallel or antiparallel alignment along the normal direction of the 2DEG plane is most favorable to the Hall voltage. In an equilibrium situation, two planar magnetizations which are not collinear can generate an electron accumulation/a Hall voltage too. When one of the FM electrodes is replaced by a normal metal (NM), the electron accumulation is still present along the wire and its magnitude remains nearly unchanged in the biased case, whereas in the unbiased case it is reduced significantly and even vanishes.     

Drag effect of one-dimensional electrons upon photoionization of D<Superscript>(−)</Superscript> centers in a longitudinal magnetic field

A theory is elaborated for the impurity photon drag effect in a semiconductor quantum wire exposed to a longitudinal magnetic field B directed along the axis of the quantum wire. The phonon drag effect is associated with the transfer of the longitudinal photon momentum to localized electrons in optical transitions from D^(?) states to hybrid-quantized states of the quantum wire, which is described by a confinement parabolic potential. An analytical expression for the drag current density is derived within the model of a zero-range potential in the effective mass approximation, and the spectral dependence of the drag current density is examined at different magnitudes of B and parameters of the quantum wire upon electron scattering by a system of impurities with short-range potentials. It is established that the spectral dependence of the drag current density exhibits a Zeeman doublet with a clear beak-shaped peak due to optical transitions of electrons from D^(?) states to states with the magnetic quantum number m=1. The possibility of using the photon drag effect in a longitudinal magnetic field for the development of laser radiation detectors is analyzed.     

Electron states in the quantum wire with periodic serial structure

A model infinite quantum wire embedded in a matrix permeable to electron waves is investigated in terms of electronic states. The wire is assumed to have a 1D crystal structure. Through electron waves propagating in its surroundings, lateral modes are coupled with Bloch waves propagating along the wire axis, which results in modes splitting into multiplets. The results presented in this study have been obtained by direct solution of the Schrödinger equation in the effective mass approximation.     

Exchange-induced splitting of radiative exciton levels in a single quantum wire

We report on polarization-resolved micro-photoluminescence experiments performed on a single GaAs/GaAlAs V-shaped quantum wire. At low temperature the micro-photoluminescence spectra are composed of sharp peaks corresponding to excitons localized in naturally formed quantum boxes. We observed splittings of the radiative doublet of these exciton levels into two linearly polarized states due to the exchange interaction. The exchange splittings are of the order of 100 μeV. A theoretical model of the exchange interaction on localized states in quantum wires is developed. It shows that the exchange splitting is characteristic of the uniaxial anisotropy of the localized states and thus related to their extension along the wire axis. The experimental results are discussed within the frame of this model.     

The superspin approach to a disordered quantum wire in the chiral-unitary symmetry class with an arbitrary number of channels

We use a superspin Hamiltonian defined on an infinite-dimensional Fock space with positive definite scalar product to study localization and delocalization of noninteracting spinless quasiparticles in quasi-one-dimensional quantum wires perturbed by weak quenched disorder. Past works using this approach have considered a single chain. Here, we extend the formalism to treat a quasi-one-dimensional system: a quantum wire with an arbitrary number of channels coupled by random hopping amplitudes. The computations are carried out explicitly for the case of a chiral quasi-one-dimensional wire with broken time-reversal symmetry (chiral-unitary symmetry class). By treating the space direction along the chains as imaginary time, the effects of the disorder are encoded in the time evolution induced by a single site superspin (non-Hermitian) Hamiltonian. We obtain the density of states near the band center of an infinitely long quantum wire. Our results agree with those based on the Dorokhov–Mello–Pereyra–Kumar equation for the chiral-unitary symmetry class.     

抛物量子线中强耦合极化子的有效质量

采用改进的线性组合算符法、Lagrange乘子和变分法,在考虑电子与LO声子相互作用情况下,研究了抛物量子线中强耦合极化子的有效质量和光学声子平均数。通过数值计算,讨论了约束强度ω₀和拉格朗日乘子u对极化子的有效质量m^*和光学声子平均数N及极化子振动频率λ的影响。计算结果表明:有效质量m^*和光学声子平均数N及极化子振动频率λ都随着约束强度ω₀和拉格朗日乘子u的增加而增大。     

Influence of the Parabolic Potential on the Interaction of Electron-Confined Phonons in a Quantum Wire

The Lee, Low and Pines' variational method is employed to study the interaction of electronconfined phonons within a rectangular quantum wire under an additional parabolic potential. Detailed mathematical derivation is carried out to obtain some formulire for the polaron selfenergy, the electron effective mass along the wire and the ground state energy; Using the idea of Fourier decomposition of wavefunctions, numerical calculations are performed for a typical GaAs quantum wire within the mesoscopic size. Our present results show that the effect of phonon confinement always reduces the magnitude of the electron-phonon interaction and the associated physical quwtities whereas the additional parabolic potential tends to enhance, both the electron-phonon interaction and the ground state energy. Comparing with previous calculations, our results also reveal the trends of those interesting physical quantities.     

Spectrum of an electron in a superlattice along a cylindrical quantum wire

The quasi-one-dimensional superlattice of two contacting semiconductor materials along a cylindrical quantum wire (using the example of CdS/HgS) is investigated. It is shown that the energy center of the electron is an alternation of allowed and forbidden bands. The dispersion law for different values of the period of the potential and the radius of the quantum wire is investigated. A transition to the Kronig-Penney model is obtained. The effective masses of the electrons of different bands are found. Chernovits State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 96–103, February, 1998.     

Carrier scattering by Auger mechanism in a single quantum wire

We report on time-resolved microphotoluminescence experiments in a single GaAs/GaAlAs V-shaped quantum wire as a function of optical excitation intensity. At low pump power we observe that excitons are localized in quantum boxes formed by the local potential minima existing along the wire axis. As the pump power is increased, state filling of the lowest lying levels of the boxes appears. When two carriers occupy the first excited level of the box, a very efficient Auger scattering occurs, leading to a transfer of carriers from one box to another neighbouring one. The intradot Auger scattering time has been measured and is of the same order of magnitude as the LA-phonon emission rate. Received 5 February 2001     

Anisotropic intrinsic spin Hall effect in quantum wires

We use numerical simulations to investigate the spin Hall effect in quantum wires in the presence of both Rashba and Dresselhaus spin-orbit coupling. We find that the intrinsic spin Hall effect is highly anisotropic with respect to the orientation of the wire, and that the nature of this anisotropy depends strongly on the electron density and the relative strengths of the Rashba and Dresselhaus spin-orbit couplings. In particular, at low densities, when only one subband of the quantum wire is occupied, the spin Hall effect is strongest for electron momentum along the [N110] axis, which is the opposite of what is expected for the purely 2D case. In addition, when more than one subband is occupied, the strength and anisotropy of the spin Hall effect can vary greatly over relatively small changes in electron density, which makes it difficult to predict which wire orientation will maximize the strength of the spin Hall effect. These results help to illuminate the role of quantum confinement in spin-orbit-coupled systems, and can serve as a guide for future experimental work on the use of quantum wires for spin-Hall-based spintronic applications.     

抛物量子线中弱耦合极化子的有效质量和光学声子平均数

讨论电子与体纵光学(LO)声子弱耦合时对抛物量子线中极化子性质的影响.采用Tokuda改进的线性组合算符法、Lagrange乘子和变分法,导出了抛物量子线中弱耦合极化子的有效质量和光学声子平均数随拉格朗日乘子变化的规律及极化子振动频率随量子线约束强度的变化规律.并以ZnS量子线为例进行了数值计算,结果表明:抛物量子线中弱耦合极化子的有效质量m^*和光学声子平均数N随着拉格朗日乘子u的增加而增大;该结论与体材料中结论基本一致,但量子线中的效应比体材料更明显,表明量子线对电子约束的增强,使极化子效应更明显.同时,极化子振动频率λ随约束强度ω₀的增强而增大.     

Exciton trapping, binding and diamagnetic shift in T-shaped quantum wires

We determine the exciton states of T-shaped quantum wires. We use anisotropic effective-mass models to describe the electron and hole states. Pair correlation along the wire axis and in the lateral directions is included. We accurately model the measured redshifts between exciton photoluminescence in quantum wells and T-shaped wires. This redshift arises from enhanced exciton binding and the difference between well and wire confinement energy. We predict a large enhancement of binding energy only when lateral correlation is included, indicating that T-shaped wires arequasirather thanquantum1D wires. We calculate exciton shapes and diamagnetic shifts to determine how the exciton is distorted when confined in a T-wire.