GdFeCo/AlN/TbFeCo薄膜的变温磁化性能研究

用磁控溅射法制备了GdFeCo/AlN/TbFeCo静磁耦合多层薄膜。振动样品磁强计和克尔磁滞回线测试装置的测试结果表明 :2 5℃不加外磁场时GdFeCo/AlN/TbFeCo静磁耦合多层薄膜读出层 (GdFeCo)的极向克尔角为零 ,读出层呈平面磁化 ;12 5℃不加外场时读出层的克尔角最大 (0 .5 4°) ,读出层的磁化方向为垂直磁化 ;随着温度增高 ,读出层由平面磁化转变为垂直磁化 ,在 75℃到 12 5℃温度范围内读出层磁化方向很快从平面磁化转变为垂直磁化。对磁化过程的机理研究表明 :饱和磁化强度和有效各向异性常量影响读出层磁化方向的转变过程 ,但主要受读出层饱和磁化强度的影响 ;在较高温度时读出层的磁化强度较小 ,退磁场能较小 ,在静磁耦合作用下 ,使GdFeCo读出层的磁化方向发生转变。制备的GdFeCo/AlN/TbFeCo静磁耦合多层薄膜适合作CAD MSR记录介质     

GdFeCo/TbFeCo磁超分辨磁光记录薄膜研究

用磁控溅射法制备了GdFeCo/TbFeCo交换耦合两层薄膜,利用不同温度的克尔磁滞回线和VSM磁滞回线研究了读出层(GdFeCo)变温磁化方向变化过程.结果表明,随温度升高读出层从平面磁化转变为垂直磁化,交换耦合两层薄膜具有中心孔探测磁超分辨的基本性能.转变过程主要受饱和磁化强度（M_s）的影响,在GdFeCo的补偿温度附近,读出层的磁化强度较小,退磁场能也较小,在交换耦合的作用下,使读出层(GdFeCo)的磁化方向发生转变.磁化方向的转变在75℃~125℃的温度范围内变化较快.     

GdFeCo/DyFeCo交换耦合两层薄膜磁化方向转变的研究

用磁控溅射法制备了GdFeCo/DyFeCo交换耦合两层薄膜，对交换耦合两层薄膜变温磁化方向进行了研究.结果表明读出层GdFeCo随温度上升从平面磁化转变成垂直磁化，转变过程中主要受饱和磁矩(M_s)的影响.在GdFeCo的补偿温度附近，读出层的磁化强度近于零，退磁场能减小，并在交换耦合的作用下，使读出层的磁化方向发生转变，制备的交换耦合两层薄膜具有中心孔磁超分辨效应. 关键词： 磁光记录 交换耦合两层薄膜 磁化     

GdFeCo磁光薄膜中RE-TM反铁磁耦合与激光感应超快磁化翻转动力学研究

使用飞秒时间分辨抽运-探测磁光克尔光谱技术,研究了激光加热GdFeCo磁光薄膜跨越铁磁补偿温度时稀土-过渡金属(RE-TM)反铁磁交换耦合行为和超快磁化翻转动力学. 实验观察到由于跨越铁磁补偿温度、净磁矩携带者交换而引起的磁化翻转反常克尔磁滞回线以及在同向外磁场下,反常回线上大于和小于矫顽力部分的饱和磁化强度不同,显示出GdFeCo中RE与TM之间的非完全刚性反铁磁耦合. 在含有Al导热底层的GdFeCo薄膜上观测到饱和磁场下激光感应磁化态翻转及再恢复的完整超快动力学过程. 与剩磁态的激光感应超快退磁化过 关键词： 补偿温度 磁化翻转 反铁磁耦合 GdFeCo     

Pt/GdFeCo/Pt多层膜的磁性和反常霍尔效应研究

亚铁磁材料因具有反铁磁排列的子晶格磁矩而表现出诸多丰富的物理性质,在磁信息存储和逻辑领域具有广阔的应用前景.本文采用磁控溅射方法在热氧化的硅基片上制备了Pt/GdFeCo(t)/Pt多层膜,系统研究了亚铁磁GdFeCo厚度对多层膜的表面形貌、结构、磁性以及反常霍尔效应(AHE)的影响.结构测试表明薄膜表面粗糙度较小,且GdFeCo层为非晶态;实验中利用GdFeCo层厚度可有效控制Gd元素含量,从而调控GdFeCo趋近反铁磁态特性的磁矩补偿点;通过重金属强自旋轨道耦合效应(SOC)和非晶态亚铁磁薄膜面内压应力,实现了良好垂直各向异性(PMA);进一步阐明了亚铁磁薄膜中磁性和反常霍尔效应的内在产生机制以及磁矩补偿点与温度的内在关系.这些结果为构建新一代低功耗自旋电子器件奠定基础.     

PdMn/Co多层膜的磁性和磁光特性研究

用磁控溅射法制备了不同Mn含量的PdMn/Co磁性多层膜，通过x射线衍射对该多层膜系列进行结构分析；测定了不同Mn含量系列样品的磁滞回线、垂直各向异性及磁力显微镜图，分析了饱和磁化强度、磁畴和垂直各向异性变化的原因；通过测定该多层膜体系的克尔谱，简要分析了一定波长下克尔角随Mn含量增加而变化的物理机制. 关键词： 多层膜 磁性 磁光     

Pt974Mn26/Co多层膜的磁性与磁光性质研究

用磁控溅射法制备了Mn含量一定、不同PtMn层厚度的Pt974Mn26/Co磁性多层膜系列，通过x射线衍射对该多层膜系列进行结构分析；测定了不同PtMn层厚度系列样品的磁滞回线、有效垂直各向异性，分析了饱和磁化强度和有效垂直各向异性变化的原因；通过测定该多层膜体系的克尔谱，分析了一定波长下克尔角随PtMn层厚度变化的规律.认为克尔角的变化是由于界面的合金化以及原子的极化减小所致. 关键词： 多层膜 磁性 磁光     

掺Mn的Pt/Co多层膜磁性和磁光特性的研究

用磁控溅射设备了ＰｔＭｎ／Ｃｏ多层薄膜,介绍了制作该多层膜的方法,并通过测定不同杂质浓度、不同光子能量下克乐角的变化,发现随Ｍｎ含量的增加,其克尔角下降,说明其磁光特性;测定不同掺杂浓度下样品的磁滞回线,发现其饱和磁化强度增加,剩磁化、矫顽力下降,分析其产生的机制。     

正交各向异性双层交换弹簧薄膜的磁矩分布

本文以Pt_(84)Co_(16)/TbFeCo双层交换弹簧体系为研究对象,利用微磁学连续模型,研究了软/硬磁层易轴方向相互垂直的新型体系中磁矩的分布特征.研究结果表明,磁矩偏离薄膜法线方向的角度在软磁层中沿膜厚方向的变化速率比硬磁层中的快.通过调节软磁层参数来增加软/硬磁的各向异性常数比、交换能常数比、饱和磁化强度比或外磁场强度,都可有效改变磁矩偏角在软/硬磁层中的变化速率.特别是当软/硬磁各向异性常数比值和交换能常数比值同时增大时,可以使得磁矩在硬磁层中的变化速率快于软磁层中的.而饱和磁化强度比值对磁矩变化速率的影响源于饱和磁化强度的变化会相应地改变各向异性常数,进而改变磁矩在软/硬磁层中磁矩方向变化速率的比值.此体系的磁滞回线显示磁性参数的改变可以显著改变体系的剩磁及饱和磁场.软磁层中的退磁场能及体系的正交各向异性可导致负的成核场.     

利用FePt/Au多层膜结构制备垂直磁记录L10-FePt薄膜

利用磁控溅射方法在100℃的MgO单晶基片上制备了［FePt/Au］₁₀多层膜,并研究了采用FePt/Au多层膜结构对FePt薄膜的有序化温度、矫顽力（H_C）、垂直磁各向异性、晶粒尺寸以及颗粒间磁交换耦合作用的影响.磁性测试结果表明：FePt/Au多层膜在退火后具有较高的H_C、良好的垂直磁各向异性、较小的晶粒尺寸且无磁交换耦合作用.截面高分辨电镜分析表明：Au可以缓解MgO和FePt之间较大的晶格错配,从而促进薄 关键词： 0-FePt薄膜')" href="#">L1₀-FePt薄膜 有序化温度 垂直磁各向异性 磁交换耦合作用     

Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films

The effects of HfO_xN_y on the electrical property of HfO_xN_y-HfO₂-HfO_xN_y sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10⁻⁸ A/cm² at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfO_xN_y film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfO_xN_y or HfO₂ structure.     

Magnetic properties of Fe1−xCoxO

Measurements are reported for the magnetic susceptibility of solid solutions Fe_1-xCo_xO for compositions with x =0.10 to 0.95 and for the temperature range 4.2 to 600 K. It is found that the Curie-Weiss law is obeyed at high temperatures while the dependence of the susceptibility and transition temperature on composition appear to be in good agreement with the “virtual crystal” approximation.     

Vibrational spectroscopy of Cm-C/Cb-Cb stretching vibrations of copper tetramesityl porphyrin: An algebraic approach

Using Lie algebraic techniques and simpler expressions of the matrix elements of Majorana and Casimir operators given by us, we obtain an effective Hamiltonian operator which conveniently describes stretching vibrations of biomolecules. For a copper tetramesityl porphyrin molecule, the higher excited vibrational levels are calculated by applying the U(2) algebraic approach.     

Elastic properties of the RIV-RIII rotator phases of alkanes

A model free energy has been constructed to describe the R_IV-R_III rotator phase transition in alkanes in terms of the elastic strains and order parameter. The conditions for the R_IV-R_III phase transition are discussed. From the free energy, the order parameter and the elastic strains are determined. The model free energy describes the first or second order character of the R_IV-R_III transition depending on the strength of the coupling. The elastic properties in the vicinity of the R_IV-R_III transition are discussed on the basis of a free energy expansion. The temperature dependence of the elastic constants is calculated on both sides of the transition. The coupling between the order parameter and elastic stains is shown to have a crucial influence on the phase behavior and the order of the transition.     

Extension of Rydberg absorption series of N2, A 2Πu ← X 1Σg+

Rydberg absorption series of N₂ converging to the $\text{A}{}^2\text{Π}{}_{\mathrm{u}}$ state of N₂⁺ have been reinvestigated with a 6.65-m normal incidence vacuum spectrograph in the second order. Previously known A ← X series (I) and (II) have been extended to higher members with m ～ 40 and up to v′ = 7.     

含铜铁电电容器SrRuO3/Pb(Zr0.4Ti0.6)O3/SrRuO3/Ni-Al/Cu/Ni-Al/SiO2/Si异质结的研究

应用磁控溅射法以Ni-Al同时作为Cu与SiO₂/Si,Cu与SRO薄膜之间的阻挡层材料,将Cu与SiO₂/Si衬底和氧化物薄膜电极隔离,避免它们在高温氧气氛中发生化学反应和互扩散,实现了Cu薄膜与氧化物铁电电容器的集成.采用X射线衍射仪(XRD)和原子力显微镜(AFM)研究了不同温度下快速退火的SrRuO₃(SRO)/Ni-Al/Cu/Ni-Al/SiO₂/Si含Cu异质结的微结构和表面形貌,结果发现SRO/Ni-Al/Cu/Ni-Al/SiO₂/Si含Cu多层异质结薄膜在高达750 ℃仍然具有较强的Cu衍射峰和比较平整的表面,显示出了很好的高温热稳定性.研究了"室温长高温退"和"低温长高温退"两种工艺手段,发现在制备含Cu多层氧化物薄膜异质结时,低温长高温后退火的方式要优于常规的室温长高温后退火方式,通过低温长高温退工艺可以缓解应力、削弱界面粗化和避免高温生长对阻挡层和Cu薄膜结构的破坏.最后结合sol-gel法将Pb(Zr_0.4Ti_0.6)O₃(PZT)生长在该含Cu异质结上,制备得SRO/PZT/SRO/Ni-Al/Cu/Ni-Al/SiO₂/Si含Cu铁电电容器,研究了电容器的薄膜结构、铁电性能和漏电特性等,发现制备的含Cu铁电电容器具有很好的铁电性能,如电滞回线趋势饱和,剩余极化强度高达~42 μC/cm²,矫顽电压为~1.0 V,介电常数~1600,漏电流~1.83×10^-4 A/cm²,以及良好的抗疲劳特性和保持特性等,表明导电性优良的Cu薄膜可以应用于高密度高性能铁电电容器.对其漏电机理研究表明,SRO/PZT/SRO含Cu铁电电容器满足空间电荷限制传导机理. 关键词： Cu PZT 铁电电容器 Ni-Al     

Near-infrared bands of S2: 3Πgi-3Σu+ system

Vibrational and rotational analyses of the near-infrared bands of S₂ lying in the region 7440–8085 Å are reported. They form a new band system involving a ${}^3\text{Π}{}_{\mathrm{gi}}\text{-}{}^3\text{Σ}{}_{\mathrm{u}}{}^{\mathrm{+}}$ transition and arise from the same initial ³Π_gi state of the ³Π_gi-³Δ_ui band system reported earlier. The analyses of the bands of this system due to the isotopic molecules ³²S³⁴S and ³⁴S₂ are also reported.     

Rotational analysis of a red A′ 2Σ+-X 2Πi system of CuO

High dispersion rotational analysis of a red CuO band system has led to the identification of an $\text{A′}{}^2\text{Σ}{}^{\mathrm{+}}\text{-X}{}^2\text{Π}{}_{\mathrm{i}}$ transition. The anomalous appearance of the branches is due to a very large spin splitting of the ²Σ upper state. The influence of centrifugal distortion effects on this spin splitting (γ_D and γ_H parameters) is essential for explaining the band structure. A reassignment of electronic symmetries of all the ²Σ states of CuO is proposed.     

Crystal structures of stage-n iodine-intercalated compounds IBi2nSr2nCanCu2nOx

The crystal structure of stage-3 iodine-intercalated superconducting IBi₆Sr₆Ca₃Cu₆O_x has been determined by transmission electron microscopy to belong to the space group Pma2 with lattice parameters a=5.4Å, B=5.4Å and C=49.4Å. Ioidine atoms intercalated between every three Bi---O bilayers expand the distance between the Bi---O layers by 3.6Å and alter the atomic stacking across Bi---O layers from the staggered configuration characteristic of host superconducting Bi₂Sr₂CaCu₂O_x to an aligned configuration characteristic of stage-1 iodine-intercalated superconducting IBi₂Sr₂CaCu₂O_x. Higher-stage intercalation has also been observed as stacking faults which predominantly contain both stage-2 and stage-3 phases. The space groups and c-axis dimensions of the higher-stage phases have been deduced to be Pma2 with c=3.6+15.3n Å when stage number n is odd, and Bbmb with c=2(3.6+15.3n) Å when n is even.     

Surface states and tunneling spectroscopy of high-Tcsuperconductors

Recent studies of high- T_csuperconductors have clarified new aspects of tunneling spectroscopy. The unconventional pairing states, i.e. d-wave symmetry in these materials have been established through various measurements. Differently from isotropic s-wave superconductors, d-wave pairing states have an internal phase of the pair potential. The internal phase modifies the surface states due to the interference effect of the quasiparticles. Along these lines, a novel formula of tunneling spectroscopy has been presented that fully takes into account of the anisotropy of the pair potential. The most essential difference of this formula from conventional ones is that it suggests the phase-sensitive capability of tunneling spectroscopy. The formula suggests that the symmetry of the pair potential is determined by the orientational dependence measurements of tunneling spectroscopy. Along these lines, several experiments have been performed on high-T_c superconductors. The observation of the zero-bias conductance peaks (ZBCP) on Y Ba₂Cu₃O_{7 − δ}strongly suggests the d_{x² − y²}-wave pairing states of hole-doped high-T_c superconductors. On the other hand, the absence of ZBCP on (electron-doped)Nd_1.85Ce_0.15CuO_{4 − δ}indicates that the pair potential of this material is a nodeless state. In this paper, recent developments of tunneling spectroscopy for anisotropic superconductors are reviewed both on theoretical and experimental aspects.