Comparison of tunneling through molecules with Mott-Hubbard and with dimerization gaps

In order to study the tunneling of electrons through an interacting, 1D, dimerized molecule connected to leads, we consider the persistent current in a ring embedding this molecule. We find numerically that, for spinless fermions, a molecule with a gap mostly due to interactions, i.e. a Mott-Hubbard gap, gives rise to a larger persistent current than a molecule with the same gap, but due only to the dimerization. In both cases, the tunneling current decreases exponentially with the size of the molecule, but more slowly in the interacting case. Implications for molecular electronic are briefly discussed. Received: 17 November 1997 / Revised: 16 January 1998 / Accepted: 16 January 1998     

Self-consistent calculation of electrostatic force for two kinds of mesoscopic surface structures

The scanning electrostatic force microscopy (SEFM) can acquire information of surface structures in a non-contact way. We calculate the electrostatic force between the charged tip and polarized surface structure in SEFM in the framework of self-consistent integral equation formalism (SCIEF), incorporating the image method to treat the electrostatic coupling of substrate and tip. We consider two kinds of surface structures, one is the topographic structure on the surface, the other is the dielectric structure embedded in the substrate. The force pattern of the topographic structure shows a protrusion around the surface structure. However, the force pattern displays a hollow around an embedded structure with a dielectric constant less than that of substrate medium. For an embedded structure with a larger dielectric constant, the force pattern exhibits a protrusion, and the force signal is much weaker than that of the topographic structure. Therefore, it is expected that one may identify these surface structures from the pure electrostatic force information in SEFM. The force signal of the densely arranged dielectric pads is simply the superposition of force signal of each pad individually, the interference effect of electric field is not remarkable. Received: 26 March 1998 / Accepted: 9 June 1998     

The electrical and dielectrical behavior of n-conducting perylene tetracarboxylic diimide derivatives

A comparison of the electrical characteristics of organic field-effect transistors (OFETs) based on derivatives of the electron-conductor perylene tetracarboxylic diimide (PTCDI) in top-contact configuration is presented. The derivatives used are N,N′-dimethyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiMe-PTCDI), N,N′-diphenyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiPhenyl-PTCDI), N,N′-dimethoxyethyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiMethoxyethyl-PTCDI), N,N′-di(3-pentyl)-3,4,9,10-perylene-tetracarboxylic-diimide (Di3Pentyl-PTCDI), and N,N′-diheptyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiHeptyl-PTCDI). Current/voltage measurements were first performed in situ and later ex situ. Additionally, the effect of annealing and bias stress was probed in situ. A strong influence of the different side groups on the order of magnitude of the electron mobility is revealed, ranging from 4×10⁻⁶ cm²/V s for DiMethoxyethyl-PTCDI to 5×10⁻² cm²/V s for DiHeptyl-PTCDI. While none of the devices was stable in air after exposition to air, only the DiMe-PTCDI one resumed its functionality after restoring vacuum conditions. The dielectric functions of the derivatives was derived, additionally revealing optical isotropy for all films and varying surface roughness. While DiHeptyl-PTCDI and Di3Pentyl-PTCDI, yielding also the highest electron mobilities, form smooth layers with negligible surface roughness, strong island formation was be observed for DiPhenyl-PTCDI and DiMethoxyethyl-PTCDI, yielding low mobilities. This island growth was also confirmed by atomic force microscopy measurements. Ageing of the samples for several months under ambient conditions leads to increased roughness for the very rough samples. Layers with smooth surface, on the other hand, showed no significant change in the dielectric behavior of the sample.     

Optical constants of 3,4,9,10-perylenetetracarboxylic dianhydride films on silicon and gallium arsenide studied by spectroscopic ellipsometry

The optical constants of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) films grown by organic molecular beam deposition on Si and GaAs substrates were determined in the spectral range from 300 nm to 1700 nm. All PTCDA layers deposited at room temperature with a low deposition rate of about 0.2 nm/min are uniaxial and strongly optically anisotropic. For the layers on Si a refractive index of 2.21 is derived in the substrate plane at 830 nm. The out-of-plane refractive index has a much lower value of 1.58. A similar anisotropy is observed for PTCDA layers on GaAs. The altogether lower refractive indices of 2.03 and 1.54, however, indicate a lower density of the films, which can be explained by the film structure. Received: 6 November 2000 / Accepted: 10 August 2001 / Published online: 17 October 2001     

The effects of exciton-diffusion blocking layers on pentacene/C60 bulk heterojunction solar cells

Organic thin film solar cells, with structures based on pentacene/C₆₀ bulk heterojunctions, have been fabricated and characterized. The effect of introducing an exciton-diffusion blocking layer (EBL) of 3,4,9,10-perylenetetracarboxylic dianhydride, between the active layer and the metal layer in the solar cell, was investigated. It was shown that optimized structures containing EBLs resulted in an improvement in solar cell conversion efficiencies. The energy levels of the molecules were calculated and are subsequently discussed.     

NaCl islands decorated with 2D or 3D 3,4,9,10-perylene-tetracarboxylic-dianhydride nanostructures

The formation of PTCDA (3,4,9,10-perylene-tetracarboxylic-dianhydride) nanostrutures on Au(1 1 1)-() covered with NaCl islands has been studied using scanning tunneling microscopy (STM). Atomically resolved STM images show that NaCl grows as (1 0 0)-terminated layers on Au(1 1 1)-(). Local atomic hexagonal packing has also been observed in the NaCl(1 0 0) layer. At submonolayer NaCl coverage, PTCDA forms two-dimensional islands on the Au(1 1 1) surface and nucleate preferentially at the NaCl island step edges. When the Au surface is fully covered with NaCl layers, PTCDA molecules form three-dimensional molecular clusters decorating the step edges of NaCl layers.     

Self-aggregates formation of 3,4,9,10-tetra-(n-alkoxy-carbonyl)-perylenes in Langmuir-Blodgett films

Langmuir-Blodgett (LB) films formed of some 3,4,9,10-tetra-(n-alkoxy-carbonyl)-perylenes and of their binary mixtures with the liquid crystal 4-octyl-4′-cyanobiphenyl (8CB) have been studied. Absorption and fluorescence studies were carried out. Both absorption and fluorescence spectra have revealed the formation of self-aggregates of dye molecules in monomolecular layers. Moreover, information about the molecular organization at the air-solid substrate interface has been obtained.     

Post deposition purification of PTCDA thin films

The decomposition of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) molecules during evaporation of unpurified raw material in ultra high vacuum was studied. The fragments were identified by mass spectrometry and the influence of these fragments and further contaminations of the raw material on the electronic structure of PTCDA thin films was measured by photoemission spectroscopy. Annealing of contaminated PTCDA films was tested as cheap and easy to perform method for (partial) post deposition purification of the contaminated films.     

Photoinduced transformations and holographic recording in nanolayered a-Se/As2S3 and AsSe/As2S3 films

Received: 13 October 1998 / Accepted: 9 December 1998 / Published online: 24 February 1999     

Mechanism of conductivity in metal-polymer-metal structures

Received: 25 September 1998 / Accepted: 25 November 1998 / Published online: 24 February 1999     

Spectroscopic process sensors in MOVPE device production

Received: 21 October 1998 / Accepted: 23 October 1998     

KrF excimer laser ablation of thin Cr film on glass substrate

Received: 5 October 1998 / Accepted: 14 December 1998 / Published online: 24 February 1999     

Low‐voltage,high‐gain,and high‐mobility organic complementary inverters based on N,N′‐ditridecyl‐3,4,9,10‐perylenetetracarboxylic diimide and pentacene

The authors describe an organic complementary inverter with N,N′‐ditridecyl‐3,4,9,10‐perylenetetracarboxylic diimide as an n‐type semiconductor and pentacene as a p‐type semiconductor. Each transistor of the inverter exhibited high carrier mobility: 1.62 cm²/Vs for an n‐type drive transistor and 0.57 cm²/Vs for a p‐type switch transistor. The gain of the inverter reached 125. Another inverter using Ta₂O₅ as a high κ gate dielectric performed well with a gain of 500 and an operation voltage of only 5 V.

     

Impact of the cathode metal work function on the performance of vacuum-deposited organic light emitting-devices

Received: 7 September 1998 / Accepted: 27 November 1998 / Published online: 24 February 1999     

Hydrogen dissociation on metal surfaces – a model system for reactions on surfaces

Received: 23 March 1998/Accepted: 21 August 1998     

Interaction of atomic hydrogen with metal surfaces

Received: 23 March 1998/Accepted: 21 August 1998     

Chromatographic size separation of single-wall carbon nanotubes

Received: 18 May 1998/Accepted: 22 May 1998     

Line-scan sequential lateral solidification of Si thin films

Received: 14 April 1998/Accepted: 22 April 1998     

Dynamic ablation studies of sub-micron gratings on metals with sub-picosecond time resolution

Received: 27 July 1998/Accepted: 28 July 1998     

Determination of resonance Raman scattering cross sections of laser dyes using a traveling-wave amplifier

Received: 1 April 1998/Revised version: 20 April 1998