SOI纳米线波导导光机理的物理分析

SOI（silicon-on-insulator）纳米线波导及其器件是近年来光电子学领域研究的重点内容之一.文章从基本的导波光学理论出发,引入古斯-汉森位移理论,对SOI纳米线波导导光的物理机制进行了分析并给出了物理解释和模拟结果.     

基于硅纳米线波导的两级光子晶体缩束器

鉴于在微观领域光波的缩束对实现光电集成的重要意义,提出了基于硅纳米线波导的两级光子晶体缩束器。其中一级压缩基于W5型和W1型光子晶体波导间的高效耦合。二级压缩则由宽为0.1μm,长为3.06μm的纳米线波导和W1型光子晶体波导构成,通过二者的高效耦合实现光束压缩。当W1型光子晶体波导和纳米线波导间介质柱的半径为0.04μm时,对于1550nm波长的电磁波,缩束器的通光效率可达93.4%,压缩比为16.08,出射光束半峰全宽仅为0.148μm。     

基于SOI非对称马赫曾德尔结构的集成矢量和微波光子移相器

设计和分析了一种基于SOI（绝缘体上的硅）脊型波导非对称马赫曾德尔结构的集成矢量和微波光子移相器。对于10 GHz的微波信号,设定非对称两臂的长度差为3 983μm时,其相应的时间延迟约为47 ps。分别在两臂上集成了一个热光可调谐可变光衰减器用于光学调谐,当衰减单元的折射率在0～6×10-3变化时,实现了10 GHz微波信号在0～180°的相位调谐。该器件尺寸小、结构紧凑,易于实现片上集成,在光控相控阵雷达中很有应用前景。     

涂覆石墨烯的非对称并行电介质纳米线波导的模式特性分析

采用多级展开方法,对涂覆石墨烯的非对称并行电介质纳米线波导的模式特性进行了分析.首先对这种波导中的表面等离子模式进行分类,然后对七种低阶模式的有效折射率和传播长度随工作频率、几何结构参数和石墨烯费米能的依赖关系进行详细的分析.结果表明,通过改变工作频率、几何结构参数和石墨烯的费米能,可以在较大范围内调节模式的特性.与有限元法进行的对比表明,基于多级方法的半解析结果与有限元法的数值结果非常符合.研究结果可为涂覆石墨烯的非对称并行电介质纳米线的设计和制作提供一定的理论基础.     

涂覆石墨烯的椭圆形电介质纳米线光波导的模式特性分析

设计了一种涂覆石墨烯的椭圆形电介质纳米线光波导.采用分离变量法,在椭圆柱坐标系中,借助Mathieu函数,得到了色散方程.通过数值求解色散方程,可以得到模式的有效折射率和场分布,从而得到模式的传播长度.研究了工作波长、结构参数以及石墨烯的费米能对模式特性的影响,并给出了前五个模式的品质因数.计算表明,当波长从4.3μm增加到8.8μm,这5个模式的有效折射率的实部减小,基模和一阶模的传播长度增大,二阶模的传播长度先增大后减小.当改变纳米线结构参数半长轴和半短轴时,对基模和一阶模的模式特性影响较小,对二阶模的模式特性影响较大.当石墨烯的费米能从0.45 eV增加到0.72 eV时,有效折射率的实部减小,传播长度可以达到2μm左右.分离变量法得到的结果与有限元方法得到的结果完全一致.本文工作可以为基于涂覆石墨烯的电介质纳米线的光波导的设计、制作和应用提供理论基础.     

基于SOI非对称马赫曾德尔结构的集成矢量和微波光子移相器(英文)

设计和分析了一种基于SOI(绝缘体上的硅)脊型波导非对称马赫曾德尔结构的集成矢量和微波光子移相器。对于10 GHz的微波信号,设定非对称两臂的长度差为3 983μm时,其相应的时间延迟约为47 ps。分别在两臂上集成了一个热光可调谐可变光衰减器用于光学调谐,当衰减单元的折射率在0～6×10-3变化时,实现了10 GHz微波信号在0～180°的相位调谐。该器件尺寸小、结构紧凑,易于实现片上集成,在光控相控阵雷达中很有应用前景。     

基于涂覆石墨烯的三根电介质纳米线的THz波导的模式特性分析

研究了一种基于涂覆石墨烯的三根电介质纳米线的THz波导,采用多极方法对这种波导所支持的5种低阶模的有效折射率的实部和传播长度进行了解析分析.结果表明,通过改变工作频率、中间纳米线半径、纳米线之间的间距以及石墨烯的费米能,可以有效地调节波导的模式特性.当工作频率从30 THz增加到40 THz时,这些模式的有效折射率的实部增大,传播长度减小,并且在变化的过程中会出现交叉现象.当中间纳米线的半径从25 nm增加到75 nm时,除了模式3和模式4基本不受影响,其他模式有效折射率的实部增大,传播长度变化各不相同.当纳米线之间的间距从10 nm增加到50 nm时,除了模式3和模式4基本不受影响,其他模式有效折射率的实部减小,传播长度增大,并且在变化的过程中会出现交叉现象.当石墨烯的费米能从0.4 eV增加到1.2 eV时,有效折射率的实部减小,传播长度增大.计算表明,多极法得到的结果与有限元方法得到的结果完全一致.本研究可以为基于涂覆石墨烯的电介质纳米线的THz波导的设计、制作和应用提供理论基础.     

SOI波导反射模式的古斯-汉欣空间位移效应及其数字式热光开关

借助波导转角镜结构,利用古斯-汉欣空间位移和热光效应折射率调制的有效组合,提出了波导反射模式数字式热光开关结构.在给定入射角的条件下优化了空间古斯-汉欣位移,在具有古斯-汉欣效应的本征态下,反射光束出现了较大的跳跃.在1.0μm厚硅膜的绝缘体上硅平台上,单模输入波导和多模干涉波导结构之间的导模本征态匹配,验证了1×3数...     

基于智能剥离技术的SOI材料制备

优化了硅片低温直接键合与智能剥离技术的工艺流程，在550℃，2.1×10^-2 Pa条件下制备了SOI材料，其顶层单晶Si膜的表面粗糙度为8.5 nm，缺陷密度为90 cm^-2，键合强度达到153.7 kg/cm²，形成的SOI结构除了可以形成三维集成电路中有源层间良好的绝缘层，避免了高温过程对有源层器件结构、材料及性能的影响，还能为三维集成电路后续有源层的制造提供高质量的单晶硅材料. 关键词： 绝缘体上硅 智能剥离 低温直接键合     

左手材料复合双棱镜内部界面的古斯-汉森位移

设计了一种左手材料复合双棱镜,由两块各向同性左手材料棱镜与夹在其间的、其界面与光轴成一定的角度的单轴各向异性左手材料平板构成.研究了发生在其内部界面上的古斯-汉森位移.分析了发生折射的条件和古斯-汉森位移的符号.研究发现,反射波与透射波有相同的古斯-汉森位移,透射波的古斯-汉森位移随着薄层厚度的增加而振荡,整体上呈增加趋势;在透射共振点,透射波的古斯-汉森位移达到极大值,且极大值可达入射波波长的数十倍;发现入射角和光轴与界面的角度对透射波的古斯-汉森位移有很大影响.最后简单地探讨了这种双棱镜的潜在应用.     

An analytical model for coplanar waveguide on silicon-on-insulator substrate with conformal mapping technique

In this paper, the authors present an analytical model for coplanar waveguide on silicon-on-insulator substrate. The four-element topological network and the conformal mapping technique are used to analyse the capacitance and the conductance of the sandwich substrate. The validity of the model is verified by the full-wave method and the experimental data. It is found that the inductance, the resistance, the capacitance and the conductance from the analytical model show they are in good agreement with the corresponding values extracted from experimental S-parameter until 10 GHz.     

Design and analysis of a new silicon-on-insulator waveguide Michelson interferometer sensor

A new designed and analyzed silicon-on-insulator (SOI) waveguide Michelson interferometer (SMI) sensor is proposed in this paper. The authors compare an optical SMI sensor, a silicon-on-insulator Bragg waveguide grating (SBG) sensor, and a fiber Bragg grating sensor (FBG) for temperature sensing in medicine applications. The SMI sensor has 20 times sensing more accuracy than the FBG sensor. Moreovr, the full width at half maximum (FWHM) of the pass-band frequency responses of our proposed SMI can be designed much narrower than FBG and SBG sensors for sensing resolution enhancement. Further, the improved characteristics of the SMI demonstrated in this paper could pave the way for future high density temperature monitoring medicine applications.     

Ultrafast femtosecond all-optical modulation through nondegenerate two-photon absorption in silicon-on-insulator waveguides

We present numerical investigations of ultrafast femtosecond (with time duration of 100 fs at 1/e intensity point) all-optical modulation of a pump-probe wave arrangement by using nondegenerate two-photon absorption (TPA), namely cross absorption, inside silicon-on-insulator (SOI) optical waveguides. Our results show that when a pump pulse with femtosecond duration and a continuous probe wave are co-propagating along the SOI, the probe wave can be modulated inversely by the ultrafast pump pulse, whose modulation depth depends strongly on the system parameters such as the waveguide length, the peak power and initial chirp of the pump wave, the group velocity dispersion (GVD), etc.; this means that the modulation depth can be improved by an appropriate increase of the waveguide length, the pump peak, and the initial chirp, in addition, which has a larger value for the probe wavelength in the normal dispersion regime compared with the case of abnormal dispersion when the center wavelength of the pump wave is located at the zero-dispersion wavelength.     

Six‐wave mixing induced by free‐carrier plasma in silicon nanowire waveguides

Nonlinear wave mixing in mesoscopic silicon structures is a fundamental nonlinear process with broad impact and applications. Silicon nanowire waveguides, in particular, have large third‐order Kerr nonlinearity, enabling salient and abundant four‐wave‐mixing dynamics and functionalities. Besides the Kerr effect, in silicon waveguides two‐photon absorption generates high free‐carrier densities, with corresponding fifth‐order nonlinearity in the forms of free‐carrier dispersion and free‐carrier absorption. However, whether these fifth‐order free‐carrier nonlinear effects can lead to six‐wave‐mixing dynamics still remains an open question until now. Here we report the demonstration of free‐carrier‐induced six‐wave mixing in silicon nanowires. Unique features, including inverse detuning dependence of six‐wave‐mixing efficiency and its higher sensitivity to pump power, are originally observed and verified by analytical prediction and numerical modeling. Additionally, asymmetric sideband generation is observed for different laser detunings, resulting from the phase‐sensitive interactions between free‐carrier six‐wave‐mixing and Kerr four‐wave‐mixing dynamics. These discoveries provide a new path for nonlinear multi‐wave interactions in nanoscale platforms.

     

Mode characteristics of nested eccentric waveguides constructed by two cylindrical nanowires coated with graphene

A kind of nested eccentric waveguide constructed with two cylindrical nanowires coated with graphene was designed. The mode characteristics of this waveguide were studied using the multipole method. It was found that the three lowest modes (mode 0, mode 1 and mode 2) can be combined by the zero-order mode or/and the first-order modes of two single nanowires. Mode 0 has a higher figure of merit and the best performance among these modes within the parameter range of interest. The mode characteristics can be adjusted by changing the parameters of the waveguide. For example, the propagation length will be increased when the operating wavelength, the minimum spacing between the inner and outer cylinders, the inner cylinder radius and the Fermi energy are increased. However, when the outer cylinder radius, the dielectric constants of region I, or the dielectric constants of region III are increased, the opposite effect can be seen. These results are consistent with the results obtained using the finite element method (FEM). The waveguide structure designed in this paper is easy to fabricate and can be applied to the field of micro/nano sensing.     

截面形状对快电子激发纳米双线表面等离激元的影响

采用边界元方法研究了快电子在金属纳米双线中激发间隙表面等离激元(SPP)的性质,比较了在不同横截面形状(包括圆形、尖劈形和不规则形状)下电子所激发SPP的不同.研究表明:在以上波导结构中,快电子都能激发具有较长传播距离和较好局域性的低阶单级-单级耦合的间隙等离激元模式;同时通过对波导无量纲价值参数的比较,发现快电子在纳米双线中激发间隙等离激元对双线波导的横截面形状要求不高,横截面形状真正影响的是高阶等离激元模式的激发,而且快电子在截面形状为尖劈的双线波导中能激发局域性更强的间隙SPP.该研究将对实验中利用 关键词： 表面等离激元 间隙模式 金属纳米波导     

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Silicon germanium(SiGe) heterojunction bipolar transistor(HBT) on thin silicon-on-insulator(SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology.The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion,which is different from that of a bulk counterpart.A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation.The Early voltage shows a kink with the increase of the reverse base-collector bias.Large differences are observed between SOI devices and their bulk counterparts.The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design,the simulation and the fabrication of high performance SOI SiGe devices and circuits.     

基于绝缘体上硅的一种改进的Mach-Zehnder声光调制器

传统的基于绝缘体上硅的Mach-Zehnder(MZ)声光调制器中,叉指换能器位于两臂的同一侧.为实现高的调制效率,声表面波的波峰和波谷分别调制MZ干涉仪的两臂,这要求控制MZ干涉仪两臂之间的距离为奇数倍声波半波长.但实际上由于传播过程中衬底材料的变化,声波波长会变大,这会导致两臂的间距难以准确设置.另一方面,声波在传播过程中经过MZ干涉仪的一臂后会发生衰减,降低了对另一臂的调制效果,影响了整体的调制效率.本文针对这些问题给出了一种解决方案,把叉指换能器放在MZ波导两臂之间,确保MZ干涉仪两臂到叉指电极中心距离相等.采用有限元法,首先对新提出的结构进行分析,然后通过声光互作用原理得到了材料的折射率变化;进而研究了波导类型、波导宽度、氧化锌厚度及叉指对数等因素对声光调制效率的影响,并对声光调制器的结构参数进行了优化以提高其性能.基于COMSOL Multiphysics的仿真结果表明,当条波导宽度为6μm,氧化锌只覆盖有叉指电极的部分且厚度为2.2μm,控制叉指电极数目为50对时,波导有效折射率变化在驱动电压为1 V时可以达到4.08×10~(-4),比传统结构提高了12%.     

Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

The factors influencing the crosstalk of silicon-on-insulator(SOI) nanowire arrayed waveguide grating(AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography(DUV) and inductively coupled plasma etching(ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 d B through adopting 800 nm arrayed waveguide width.