Topological Dirac surface states in ternary compounds GeBi2Te4, SnBi2Te4 and Sn0.571Bi2.286Se4

Using high-resolution angle-resolved and time-resolved photoemission spectroscopy, we have studied the low-energy band structures in occupied and unoccupied states of three ternary compounds GeBi₂Te₄, SnBi₂Te₄ and Sn_0.571Bi_2.286Se₄ near the Fermi level. In previously confirmed topological insulator GeBi₂Te₄ compounds, we confirmed the existence of the Dirac surface state and found that the bulk energy gap is much larger than that in the first-principles calculations. In SnBi₂Te₄ compounds, the Dirac surface state was observed, consistent with the first-principles calculations, indicating that it is a topological insulator. The experimental detected bulk gap is a little bit larger than that in calculations. In Sn_0.571Bi_2.286Se₄ compounds, our measurements suggest that this nonstoichiometric compound is a topological insulator although the stoichiometric SnBi₂Se₄ compound was proposed to be topological trivial.     

Measurement of electronic structure in van der Waals ferromagnet Fe5-xGeTe2

As a van der Waals ferromagnet with high Curie temperature, Fe_5-xGeTe₂ has attracted tremendous interests recently. Here, using high-resolution angle-resolved photoemission spectroscopy (ARPES), we systematically investigated the electronic structure of Fe_5-xGeTe₂ crystals and its temperature evolution. Our ARPES measurement reveals two types of band structures from two different terminations with slight k_z evolution. Interestingly, across the ferromagnetic transition, we observed the merging of two split bands above the Curie temperature, suggesting the band splitting due to the exchange interaction within the itinerant Stoner model. Our results provide important insights into the electronic and magnetic properties of Fe_5-xGeTe₂ and the understanding of magnetism in a two-dimensional ferromagnetic system.     

用角分辨光电子能谱研究Co/Cu(111)外延超薄膜的电子结构

利用同步辐射角分辨光电子能谱研究了分子束外延生长的Co/Cu(111)超薄膜电子结构的变化.Cu(111)的位于表面布里渊区Γ点的表面态在覆盖度为两单层时仍然可以分辨,说明薄膜生长模式不是二维层状生长.在一单层和二单层时,动量沿Cu体布里渊区ΓΛL方向变化,Co的最明显的峰包有能量色散.在覆盖度从一单层到两单层的变化过程中,固定光子能量测谱发现Co的能带的能量调整.实验测得的Co膜的电子结构与已有理论计算的结果对比,初步确定Co原子在生长初期阶段为两层岛生长,而且在一单层时已经具有铁磁性.     

Ag(110)表面吸附酞菁铜分子的紫外光电子谱研究

用紫外光电子能谱(UPS)研究了酞菁铜分子在Ag(110)单晶表面上的吸附，随着酞菁铜分子覆盖度增加，衬底Ag的3d电子信号逐渐减弱，在此能带区域出现两个新的谱峰，这两个与吸附有机分子轨道有关的谱峰的束缚能分别为4.45 和6.36 eV.随着覆盖度的增加，在结合能为1.51和9.20 eV处又出现了两个谱峰，它们同样来自吸附有机分子的轨道.随着覆盖度的继续增加，上述四个谱峰的强度逐渐增加，其能量位置均发生了明显的偏移.根据角分辨光电子能谱的实验结果，酞菁铜分子的分子平面基本与衬底表面平行.密度泛函理论计     

Ag(110)表面吸附酞菁铜分子的紫外光电子谱研究

用紫外光电子能谱(UPS)研究了酞菁铜分子在Ag(110)单晶表面上的吸附,随着酞菁铜分子覆盖度增加,衬底Ag的3d电子信号逐渐减弱,在此能带区域出现两个新的谱峰,这两个与吸附有机分子轨道有关的谱峰的束缚能分别为4.45 和6.36 eV.随着覆盖度的增加,在结合能为1.51和9.20 eV处又出现了两个谱峰,它们同样来自吸附有机分子的轨道.随着覆盖度的继续增加,上述四个谱峰的强度逐渐增加,其能量位置均发生了明显的偏移.根据角分辨光电子能谱的实验结果,酞菁铜分子的分子平面基本与衬底表面平行.密度泛函理论计 关键词： 酞菁铜 紫外光电子谱 吸附电子态 密度泛函理论     

6H-SiC（0001）-6[KF（]3[KF）]×6[KF（]3[KF）]R30°重构表面的同步辐射角分辨光电子能谱研究

利用同步辐射角分辨光电子能谱（SRARPES）对6H-SiC（0001）-6[KF（]3[KF）]×6[KF（]3[KF）] R30°重构表面的电子结构和表面态进行了研究.通过鉴别价带谱中来自于体态的信息,可以推断出重构表面的费米能级位于体态价带顶之上（2.1±0.1）eV处.实验测出的体能带结构与理论计算的结果较为符合.在重构表面上发现三个表面态,分别位于结合能-0.48 eV（S₀）,-1.62 eV（S₁）和-4. 关键词： 角分辨光电子能谱 碳化硅（SiC） 电子结构 表面态     

有机半导体perylene和tetracene在Ag(110)表面上有序薄膜的结构与电子态研究

利用紫外光电子能谱(UPS)和低能电子衍射(LEED)对银(110)表面上perylene与tetracene的生长进行了研究.LEED的结果表明：一个分子单层的perylene在银(110)表面上会形成C(6×2)的有序结构；一个分子单层的tetracene，观察到的则是C(4×2)的有序结构.根据UPS的测量，与perylene分子轨道有关的4个特征峰分别位于Frimi能级以下35，48，64和85eV处，与tetracene分子轨道有关的4个特征峰的结合能分别为3．4，49，59和94eV.角分辨紫外光电子能谱(ARUPS)的测量表明，表面附近的perylene和tetracene分子平面平行于银衬底表面，tetracene分子的长轴可以确定沿［110］晶向. 关键词： 有机半导体材料 紫外光电子能谱 结构和电子结构     

金属表面Rashba自旋轨道耦合作用研究进展

自旋轨道耦合是电子自旋与轨道相互作用的桥梁, 它提供了利用外电场来调控电子的轨道运动、进而调控电子自旋状态的可能. 固体材料中有很多有趣的物理现象, 例如磁晶各向异性、自旋霍尔效应、拓扑绝缘体等, 都与自旋轨道耦合密切相关. 在表面/界面体系中, 由于结构反演不对称导致的自旋轨道耦合称为Rashba自旋轨道耦合, 它最早在半导体材料中获得研究, 并因其强度可由栅电压灵活调控而备受关注, 成为电控磁性的重要物理基础之一. 继半导体材料后, 金属表面成为具有Rashba自旋轨道耦合作用的又一主流体系. 本文以Au(111), Bi(111), Gd(0001)等为例综述了磁性与非磁性金属表面Rashba自旋轨道耦合的研究进展, 讨论了表面电势梯度、原子序数、表面态波函数的对称性, 以及表面态中轨道杂化等因素对金属表面Rashba自旋轨道耦合强度的影响. 在磁性金属表面, 同时存在Rashba自旋轨道耦合作用与磁交换作用, 通过Rashba自旋轨道耦合可能实现电场对磁性的调控. 最后, 阐述了外加电场和表面吸附等方法对金属表面Rashba自旋轨道耦合的调控. 基于密度泛函理论的第一性原理计算和角分辨光电子能谱测量是金属表面Rashba自旋轨道耦合的两大主要研究方法, 本文综述了这两方面的研究结果, 对金属表面Rashba自旋轨道耦合进行了深入全面的总结和分析.     

Exotic electronic states in the world of flat bands:From theory to material

It has long been noticed that special lattices contain single-electron flat bands(FB) without any dispersion. Since the kinetic energy of electrons is quenched in the FB, this highly degenerate energy level becomes an ideal platform to achieve strongly correlated electronic states, such as magnetism, superconductivity, and Wigner crystal. Recently, the FB has attracted increasing interest because of the possibility to go beyond the conventional symmetry-breaking phases towards topologically ordered phases, such as lattice versions of fractional quantum Hall states. This article reviews different aspects of FBs in a nutshell. Starting from the standard band theory, we aim to bridge the frontier of FBs with the textbook solidstate physics. Then, based on concrete examples, we show the common origin of FBs in terms of destructive interference,and discuss various many-body phases associated with such a singular band structure. In the end, we demonstrate real FBs in quantum frustrated materials and organometallic frameworks.     

Realization of a spin-polarized two-dimensional electron gas via image-potential-induced surface states

Electrons in image-potential-induced surface states form a two-dimensional electron gas in front of the surfaces. In the case of ferromagnets, their binding energies as well as lifetimes depend on the orientation of their spin magnetic moment with respect to the magnetization direction. Various experiments with inverse photoemission and two-photon photoemission to detect the spin dependence of image states are reviewed. A new and successful approach to achieve and detect a spin-polarized two-dimensional electron gas is presented, namely polarization-dependent and spin-resolved two-photon photoemission. Additional time resolution opens the way to study spin-dependent electron dynamics.     

Electronic surface states of Cu(1 1 0) surface

Surface states are a unique and important class of quantum states that shave an important effect on the electronic properties of Cu(1 1 0) surface. The Cu(1 1 0) surface has been studied using ultraviolet photoemission spectroscopy (PES), inverse photoemission spectroscopy (IPES), and reflection anisotropy spectroscopy (RAS), and shows a resonance in the RAS spectra at 2.1 eV due to a transition between occupied and unoccupied surface states. The unoccupied surface state involved in the RAS transition at an energy of 1.7 eV at the point of the surface Brillouin zone has been investigated using IPES and the occupied surface state is seen in PES spectra at 0.45 eV below the Fermi level. The energy difference of the surface states, 2.15 eV, is a good match to the transition energy found in the RAS experiments.     

Surface gap and surface electronic states in CuGeO3 single crystal

The surface and bulk electronic excitations of CuGeO₃ are investigated by means of electron energy loss and polarized X-ray absorption spectroscopy. CuGeO₃ shows a surface charge transfer gap of about 3.0±0.3 eV. The unoccupied oxygen derived density of states, as probed by X-ray absorption at the O 1s edge, is in good agreement with recent many-body calculations.     

On the origin of surface states in a correlated local-moment film

The electronic quasiparticle structure of a ferromagnetic local moment film is investigated within the framework of the s-f model. For the special case of a single electron in an otherwise empty energy band being exchange coupled to a fully ordered localised spin system the problem can be solved exactly and, for the spin- electron, some marked correlation effects can be found. We extend our model to incorporate the influence of the surface on the electronic structure. Therefore we modify the hopping integrals in the vicinity of the surface. This leads to the existence of surface states, both for the spin- and the spin- spectral density of states. The interplay between the modification of the hopping integrals and the existence of surface states and correlation effects is discussed in detail. Received: 22 September 1997 / Revised: 12 December 1997 / Accepted: 15 December 1997     

Understanding of surface states in a correlated electron system

The aim of this work is to find a simple analytic model to explain some principal aspects of the behavior of surface states in correlated electron systems. We start from the analytic expression for the Green function of the semi-infinite tight binding linear chain. This Green function in case of modification of the center of gravity of the first atom and the change in coupling between the first and the second atom is evaluated as an exact analytic expression. Conditions for the existence and classification of surface states are given. The spectral weight of surface states and the local density of states are evaluated. The method is applied to a s.c. (100) surface of a local moment crystal. Conditions for the existence of surface states are derived and their locations in the Brillouin zone are predicted. It is shown that it is possible to include correlation effects within the framework of the discussed model. The comparison with former numerical results is performed. Received 8 March 2000     

VC(001)弛豫表面构型与电子结构第一性原理研究

用第一性原理方法对VC(001)清洁表面的构型和电子结构进行了详细研究，与TiC(001)面类似，VC(001)面弛豫后形成表面皱褶，其表层V原子和C原子分别朝体相和真空方向移动. 能带计算结果表明，过渡金属碳化物(001)面的能带结构符合刚性带理论模型. 对于VC(001)面，表面态主要处在-30eV附近，其主要成分为表层C原子的2pz轨道. 此外，以表层V原子的3d轨道成分为主的表面态出现在费米能级附近，由于这些表面态以表面法线方向的轨道(3d２z和3dxz/dyz)为主要成分，因此在表面反应中将起到重要作用，从而体现出与TiC(001)面不同的反应性质. 关键词： 过渡金属碳化物 表面态 能带结构     

Electronic structure and defect states of transition films from amorphous to microcrystalline silicon studied by surface photovoltage spectroscopy

In this paper, surface photovoltage spectroscopy (SPS) is used to determine the electronic structure of the hydrogenated transition Si films. All samples are prepared by using helicon wave plasma-enhanced chemical vapour deposition technique, the films exhibit a transition from the amorphous phase to the microcrystalline phase with increasing temperature. The film deposited at lower substrate temperature has the amorphous-like electronic structure with two types of dominant defect states corresponding to the occupied Si dangling bond states (D⁰/D^- and the empty Si dangling states (D⁺). At higher substrate temperature, the crystallinity of the deposited films increases, while their band gap energy decreases. Meanwhile, two types of additional defect states is incorporate into the films as compared with the amorphous counterpart, which is attributed to the interface defect states between the microcrystalline Si grains and the amorphous matrix. The relative SPS intensity of these two kinds of defect states in samples deposited above 300\du increases first and decreases afterwards, which may be interpreted as a result of the competition between hydrogen release and crystalline grain size increment with increasing substrate temperature.     

The unoccupied electronic structure characterization of hydrothermally grown ThO2 single crystals

Single crystals of thorium dioxide ThO₂, grown by the hydrothermal growth technique, have been investigated by ultraviolet photoemission spectroscopy (UPS), inverse photoemission spectroscopy (IPES), and L₃, M₃, M₄, and M₅ X‐ray absorption near edge spectroscopy (XANES). The experimental band gap for large single crystals has been determined to be 6 eV to 7 eV, from UPS and IPES, in line with expectations. The combined UPS and IPES, place the Fermi level near the conduction band minimum, making these crystals n‐type, with extensive band tailing, suggesting an optical gap in the region of 4.8 eV for excitations from occupied to unoccupied edge states. Hybridization between the Th 6d/5f bands with O 2p is strongly implicated. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

缺陷对单层MoS2电子结构的影响

为了研究缺陷对单层MoS2的电子结构, 本文基于密度泛函理论框架下的第一性原理, 采用数值基组的方法计算了MoS2的Mo位缺陷、S位缺陷的能带结构和态密度.结果发现：Mo位缺陷、S位缺陷的MoS2的能带结构中的价带顶与导带底都在Q点, 为直接带隙材料; 其中Mo位缺陷体的禁带区域都出现5条新能级, S位缺陷体的禁带区域出现了3条新能级; 缺陷体能带结构的能量下降与体系中未成键的电子有关.对于态密度而言, Mo位缺陷体的费米能级处出现了峰值, 表明Mo位缺陷会对其光电性质带来影响.同时分析电荷分布发现, Mo缺陷周围存在着负电荷聚集的现象, S缺陷周围存在正电荷聚集的现象.     

缺陷对单层MoS_2电子结构的影响

为了研究缺陷对单层MoS_2的电子结构,本文基于密度泛函理论框架下的第一性原理,采用数值基组的方法计算了MoS_2的Mo位缺陷、S位缺陷的能带结构和态密度.结果发现:Mo位缺陷、S位缺陷的MoS_2的能带结构中的价带顶与导带底都在Q点,为直接带隙材料;其中Mo位缺陷体的禁带区域都出现5条新能级,S位缺陷体的禁带区域出现了3条新能级;缺陷体能带结构的能量下降与体系中未成键的电子有关.对于态密度而言,Mo位缺陷体的费米能级处出现了峰值,表明Mo位缺陷会对其光电性质带来影响.同时分析电荷分布发现,Mo缺陷周围存在着负电荷聚集的现象,S缺陷周围存在正电荷聚集的现象.     

磁耦合效应对半无限超晶格中表面电子态的影响

在有效质量近似理论下，采用有效垒高方法，研究了在沿超晶格生长方向加一有限磁场时磁耦合效应对半无限半导体超晶格中表面电子态的影响.当考虑超晶格中阱层和垒层之间电子有效质量的差别时，沿超晶格生长方向的磁场将导致磁耦合效应的出现.研究结果表明，磁耦合效应不仅引起表面电子能级的量子化，而且表面电子能级的大小及其在表面附近的局域程度也依赖于磁场的大小和朗道指数.此外，研究表明布洛赫波数的虚部可以作为一个衡量表面电子态局域程度的物理量. 关键词： 超晶格中的电子态 表面态 磁场