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The decomposition (70 eV, 17 eV) of Si2(OCH3)6, Si2(OCD3)6, and Si3(OCH3)8 by electron-impact is characterized by an initial loss of the radicals CH3, Si(OCH3)3, and OCH3. For the disilanes, a typical pathway follows by successive loss of formaldehyde forming SiH-units; in the trisilane the main fragmentation path shows elimination of dimethoxysilylene previous to CH2O-abstraction. Fragmentation schemes are given, in part metastable supported.  相似文献   

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Chemical Vapor Transport of Intermetallic Systems. 9 Chemical Transport of Copper Germanides and Copper Silicides By means of chemical vapor transport using iodine and bromine as transport agents in the system Cu/Ge the compounds Cu3Ge (ϵ and ϵ1), Cu5Ge (ζ) and copper‐rich mixed crystals Cu(Ge) have been prepared in form of single crystals. Thermodynamic considerations allow to understand the CVT process, especially the unexpected low temperatures. Copper silicides can be prepared under similiar conditions. They are extremely disordered. Their crystallographic characterisation was therefore impossible.  相似文献   

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