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1.
We report on the formation of a graphene monolayer on a Ru(0001)
surface by annealing the Ru(0001) crystal. The samples are
characterized by scanning tunnelling microscopy (STM) and Auger
electron spectroscopy (AES). STM images show that the Moir\'{e}
pattern is caused by the graphene layer mismatched with the
underlying Ru(0001) surface and has an $N\times N$ superlattice. It
is further found that the graphene monolayer on a Ru(0001) surface is
very stable at high temperatures. Our results provide a simple and
convenient method to produce a graphene monolayer on the Ru(0001)
surface, which is used as a template for fabricating functional
nanostructures needed in future nano devices and catalysis. 相似文献
2.
The energetic stability, electronic and magnetic properties of chiral graphene nanoribbons (GNRs) with hydrogen-terminated edges are investigated using density functional theory. Our calculations show that the percentage of carbon atoms at the zigzag sites (P(z)) is the key factor determining the electronic and magnetic properties of chiral GNRs. Within the local spin density approximation, chiral GNRs with P(z) ≥ 50% have a semiconducting antiferromagnetic ground state. Otherwise, chiral GNRs are spin degenerate semiconductors. Thus, the critical chiral angle for the occurrence of spin polarization is determined to be 13.9°. In contrast to the antiferromagnetic state that is independent of the width of GNRs investigated, size effects occur for the ferromagnetic metastable state. These findings are helpful for the design of GNR-based spintronic devices. 相似文献
3.
I. N. Yakovkin 《The European Physical Journal B - Condensed Matter and Complex Systems》2012,85(2):61
The electronic structures of Au monolayers on the Ru(0001) and graphene-coated Ru(0001)
surfaces have been calculated by DFT method using the supercell (repeated-slab) approach.
The local densities of states (LDOS) and band structures of the monolayer and bilayer Au
films adsorbed on the graphene/Ru(0001) and those of free hexagonal Au layers are found to
be very similar. This result indicates that the monolayer graphene almost completely
screens the Au layers from the Ru(0001) substrate surface, so that electronic properties
of Au films adsorbed on graphene are determined predominantly by the electronic structure
of the Au adlayers, essentially independent on the electronic structure of the substrate
surface. 相似文献
4.
The atomic and electronic structures of a graphene monolayer on a Ru(0001)
surface under compressive strain are investigated by using
first-principles calculations. Three models of graphene monolayers
with different carbon periodicities due to the lattice mismatch are proposed in the presence and the absence of the Ru(0001) substrate separately. Considering the strain induced by the lattice mismatch, we optimize the atomic structures and investigate the electronic properties of the graphene. Our calculation results show that the graphene layers turn into periodic corrugations and there exist strong chemical bonds in the interface between the graphene N×N superlattice and the substrate. The strain does not induce significant changes in electronic structure. Furthermore, the results calculated in the local density approximation (LDA) are compared with those obtained in the generalized gradient approximation (GGA), showing that the LDA results are more reasonable than the GGA results when only two substrate layers are used in calculation. 相似文献
5.
High quality sub-monolayer, monolayer, and bilayer graphene were grown on Ru(0001). For the sub-monolayer graphene, the size of graphene islands with zigzag edges can be controlled by the dose of ethylene exposure. By increasing the dose of ethylene to 100 Langmuir at a high substrate temperature(800℃), high quality single-crystalline monolayer graphene was synthesized on Ru(0001). High quality bilayer graphene was formed by further increasing the dose of ethylene while reducing the cooling rate to 5℃/min. Raman spectroscopy revealed the vibrational states of graphene, G and 2D peaks appeared only in the bilayer graphene, which demonstrates that it behaves as the intrinsic graphene. Our present work affords methods to produce high quality sub-monolayer, monolayer, and bilayer graphene, both for basic research and applications. 相似文献
6.
为了说明钡助剂的存在形式, 本文采用第一性原理方法研究了BaxOy小团簇修饰Ru(0001)表面的结构稳定性和氮分子吸附性质. 基于总能的热力学分析发现, 在实验条件下(500 K, PH2O/PH2<10-3), Ba2O团簇比BaO2, BaO, Ba和O等团簇(原子)更加稳定. 这证实含有金属性钡原子的团簇也是氧化钡助剂可能的工作状态. 表面电荷差分密度说明Ba2O团簇的氧和钡原子与衬底的作用不同. 不过Ba2O团簇氧和钡原子附近的氮分子吸附行为相似, Ba2O团簇增强了氮分子和衬底的相互作用. Ba2O团簇氧和钡原子附近的氮分子吸附能分别为0.78 和0.88 eV, 均大于清洁表面的0.67 eV. 氮分子间距和氮分子的拉伸振动频率都表明Ba2O团簇在一定程度上活化了吸附氮分子. Ba2O团簇氧和钡原子附近的N–N键长分别为0.117和0.116 nm, 大于清洁表面的0.114 nm. 氧和钡原子附近氮分子的拉伸振动频率分别为 1888 和1985 cm-1, 小于清洁表面的2193 cm-1. 电荷差分密度的计算结果说明, 削弱作用主要来自于Ba2O团簇中钡离子和氮分子间的静电作用. 两者间的静电作用增加了氮分子π 反键轨道的占据数, 促进了氮分子极化, 从而削弱氮分子键. 相似文献
7.
We report the existence of zero-energy surface states localized at zigzag edges of bilayer graphene. Working within the tight-binding approximation we derive the analytic solution for the wave functions of these peculiar surface states. It is shown that zero-energy edge states in bilayer graphene can be divided into two families: (i) states living only on a single plane, equivalent to surface states in monolayer graphene and (ii) states with a finite amplitude over the two layers, with an enhanced penetration into the bulk. The bulk and surface (edge) electronic structure of bilayer graphene nanoribbons is also studied, both in the absence and in the presence of a bias voltage between planes. 相似文献
8.
Through the Green's function formalism and tight-binding Hamiltonian model calculations, the temperature dependent electronic thermal conductivity (TC) for different diameters of zigzag carbon nanotubes and their corresponding unzipped armchair graphene nanoribbons is calculated. All functional temperature dependencies bear crossovers, for which, at higher temperatures, nanotubes have a slightly higher TC than their derived nanoribbons, while below that crossover, both systems exhibit a significant coincidence over a moderate range of lower temperatures. Noticeably, TC decreases with increasing the width or diameter of the corresponding systems. Also, at low temperatures TC is proportional to the density of states around the Fermi level, and thus increasing for metal or semiconductors of narrower gap cases. 相似文献
9.
The adsorption of xenon has been studied with UV photoemission (UPS), flash desorption (TDS) and work function measurements on differently conditioned Ru(0001) surfaces at 100 K and at pressures up to 3 × 10?5 Torr. Low energy electron diffraction (LEED) and Auger electron spectroscopy (AES) served to ascertain the surface perfectness. On a perfect Ru(0001) surface only one Xe adsorption state is observed, which is characterized by, electron binding energies of 5.40 and 6.65 eV, an adsorption energy of Ead≈ 5 kcal/mole and dipole moment of μ'T ≈ 0.25 D. On a stepped-kinked Ru(0001) surface, the terrace-width, the step-height and step-orientation of which are well characterized with LEED, however, two coexisting xenon adsorption states are distinguishable by an unprecedented separation in, electron binding energies of 800 meV, by their different UPS intensities and line shapes, by their difference in adsorption energy ofΔEad ≈ 3 kcal/mole and finally by their strongly deviating dipole moments of μS = 1.0 D and μT = 0.34 D. The two xenon states (which are also observed on a slightly sputtered surface) are identified as corresponding to xenon atoms being adsorbed at step and terrace sites, respectively. Their relative concentrations as deduced from the UPS intensities quantitatively correlate with the abundance of step and terrace sites of the ideal TLK surface structure model as derived from LEED. Furthermore, ledge-sites and kink-sites are distinguishable via Ead. The Ead heterogeneity on the stepped-kinked Ru(0001) surface is interpreted in terms of different coordination and/or different charge-transfer-bonding at the various surface sites. The enormous increase in Xe 5p electron binding energy of 0.8 eV for Xe atoms at step sites is interpreted as a pure surface dipole potential shift. —The observed effects suggest selective xenon adsorption as a tool for local surface structure determination. 相似文献
10.
Miniussi E Pozzo M Baraldi A Vesselli E Zhan RR Comelli G Menteş TO Niño MA Locatelli A Lizzit S Alfè D 《Physical review letters》2011,106(21):216101
We report on a novel approach to determine the relationship between the corrugation and the thermal stability of epitaxial graphene grown on a strongly interacting substrate. According to our density functional theory calculations, the C single layer grown on Re(0001) is strongly corrugated, with a buckling of 1.6 ?, yielding a simulated C 1s core level spectrum which is in excellent agreement with the experimental one. We found that corrugation is closely knit with the thermal stability of the C network: C-C bond breaking is favored in the strongly buckled regions of the moiré cell, though it requires the presence of diffusing graphene layer vacancies. 相似文献
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12.
本文采用密度泛函理论方法研究了Ru(0001)表面氮分子和钡原子的相互作用.计算结果表明,钡原子的作用弱化了氮分子键.氮分子键长从Ru(001)-N2表面的0.113 nm伸长互Ru(001)-N2/Ba表面的0.120 nm;分子的拉伸振动频率从2221 cm-1减小到1746 cm-1;氮分子得到的电荷数从清洁表面的0.3e增加到1.1 e.电荷从钡原子6s轨道向钌原子4d轨道转移,转移电荷增强了氮分子2π空轨道和钌原子4d轨道间的杂化作用,导致5σ分子轨道和dπ杂化轨道发生极化.轨道极化使分子电偶极矩增加了约-0.136 e(A).金属钡在Ru(0001)表面氮分子活化过程中具备电子型助催剂的特征. 相似文献
13.
Based on the model of lattice dynamics together with the transfer matrix technique, we investigate the thermal conductances of phonons in quasi-one-dimensional disordered graphene strips with armchair edges using Landauer formalism for thermal transport. It is found that the contributions to thermal conductance from the phonon transport near von Hove singularities is significantly suppressed by the presence of disorder, on the contrary to the effect of disorder on phonon modes in other frequency regions. Besides the magnitude, for different widths of the strips, the thermal conductance also shows different temperature dependence. At low temperatures, the thermal conductance displays quantized features of both pure and disordered graphene strips implying that the transmission of phonon modes at low frequencies are almost unaffected by the disorder. 相似文献
14.
Jerry Ray Dias 《Molecular physics》2013,111(24):3425-3429
It is shown that armchair edges possess greater aromaticity and cyclic conjugation than do zigzag edges in model nanoribbons. These results are consistent with the zigzag graphene edges being more prone to rapid oxidation when oxygen is present than armchair graphene edges. These results were obtained using Aihara's BRE and Bosanac and Gutman's CCE methods for measuring aromaticity of individual rings. New numerical results are given for three pairs of strongly subspectral series. 相似文献
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16.
The unoccupied electronic states of epitaxially grown graphene on Ru(0001) have been explored by time- and angle-resolved two-photon photoemission. We identify a Ru derived resonance and a Ru/graphene interface state at 0.91 and 2.58?eV above the Fermi level, as well as three image-potential derived states close to the vacuum level. The most strongly bound, short-lived, and least dispersing image-potential state is suggested to have some quantum-well character with a large amplitude below the graphene hills. The two other image-potential states are attributed to a series of slightly decoupled states. Their lifetimes and dispersions are indicative of electrons moving almost freely above the valley areas of the moiré superstructure of graphene. 相似文献
17.
采用密度泛函理论研究了Ru(0001) /BaO表面的原子层结构和氮分子的吸附性质. 研究结果表明, 在低覆盖度下氧化钡倾向于以相同的构型形成Ru(0001) 表面原子层. 在此构型中, 氧原子位于表面p(1× 1) 结构的hcp谷位, 而钡原子则位于同一p(1× 1) 结构的顶位附近. 钌氧键键长等于0.209 nm, 比EXAFS的实验值大0.018 nm. 在Ru(0001) /BaO表面氮分子倾向吸附于钡原子附近. 相应位置的氮分子吸附能位于0.70到0.87 eV之间, 大于氧原子附近的氮分子吸附能. 钡原子附近的钌原子对氮分子具有更强的活化性能. 相应位置的氮分子拉伸振动频率等于1946 cm- 1, 比氧原子附近的最大分子振动频率小约130 cm-1. Ru(0001) /BaO表面氮分子键强度介于清洁Ru(0001) 和Ru(0001) /Ba表面之间. Ru(0001)/BaO表面不同位置的氮分子吸附性质差异是由钡和氧原子化学性质不同造成的. 表面钡原子的作用能够减少吸附氮分子的σ*轨道电子密度, 增加π*轨道电子密度, 从而增强氮分子和钌原子间的轨道杂化作用, 弱化氮分子键. 相似文献
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19.
采用紫外光电子能谱,研究了新型有机发光材料八芳基环辛四烯(OPCOT)在金属Ru(0001)表面上的电子结构,以及它们之间的相互作用.位于费米能级以下43,69,93和114eV处的4个谱峰分别来自于OPCOT材料中苯环的πCC,σCC,σCH和σHH轨道,位于30eV处的谱峰反映了8个苯环聚合后具有π轨道特性的C—C键.OPCOT材料的价带顶位于费米能级以下25eV处,OPCOT材料在Ru(0001)表面上的功函数为395eV.150℃以下,OPCOT材料可以在Ru(0001)表面稳定存在.随温度的升高,OPCOT材料主要以脱附的形式减少
关键词:
八芳基环辛四烯
光电子能谱
价电子结构
脱附 相似文献
20.
报道Ge在Ru(0001)表面上生长以及相互作用行为的扫描隧道显微镜(STM)和x射线光电子能谱(XPS)研究. STM的实验结果表明Ge在Ru(0001)表面的生长呈典型的Stranski_Krastanov生长模式,Ge的覆盖度小于单原子层时呈层状生长,而从第二层开始呈岛状生长. XPS测量显示衬底Ru(0001)与Ge的相互作用很弱. Ru(0001)表面的Ru 3d5/2和Ru 3d3/2芯态结合能分别处于2798和2840 eV. 随着Ge的生长,到Ge层的厚度为20个单原子层,衬底Ru 3d芯态结合能减小了约02 eV,而Ge 3d芯态结合能从Ge低覆盖度时的289 eV增加到了290 eV,其相对位移约为01 eV.
关键词:
Ge
Ru表面
生长
相互作用 相似文献