Ferromagnetic Mn-doped Si0.3Ge0.7 nanodots self-assembled on Si(100)

Densely packed epitaxial Mn-doped Si(0.3)Ge(0.7) nanodots self-assembled on Si(100) have been obtained. Their structural properties were studied using reflection high-energy electron diffraction, energy dispersive x-ray diffraction, atomic force microscopy, extended x-ray absorption fine structure measurements and high-resolution transmission electron microscopy. Mn(5)Ge(1)Si(2) crystallites embedded in Si(0.3)Ge(0.7) were found. They exhibit a ferromagnetic behaviour with a Curie temperature of about 225?K.     

Preferential ordering of self-assembled Ge islands on focused ion-beam patterned Si(100)

We report the growth of Ge islands on Si (001) substrates with lithographically defined two-dimensionally periodic pits using focused ion-beam patterning and molecular beam epitaxy. The formation of circularly ordered Ge islands has been achieved by means of nonuniform strain field around the periphery of the holes due to ion bombardment. Lateral ordering of the Ge islands have been controlled by both the pit size and pit separation. Preferential growth at the pit sites has also been achieved by using appropriate pattern shape and size.     

Evaluation of copper Chemical-Vapor-Deposition films on glass and Si(100) substrates

Thin films of pure copper have been deposited on glass and Si(100) substrates using copper acetylacetonate [Cu(acac)₂] and copper HexaFluoroAcetylacetonate [Cu(HFA)₂] sources. A thermal, cold-wall, reduced pressure (3325–5985 Pa) Metal-Organic Chemical Vapor Deposition (MOCVD) process was employed. The effect of H₂O vapor on the grain size, deposition rate, and resistivity was examined. Electrical resistivities of 2.4 cm for copper films deposited on Si(100) and 3.44 cm for copper films deposited on glass at substrate temperatures of 265° C and a [Cu(acac)₂] source temperature of 147° C with the use of H₂O vapor were measured. When [Cu(HFA)₂] was used, the substrate temperature was 385° C and the source temperature was 85° C. An activation energy for the copper film deposition process was calculated to be 22.2 kJ/mol in the case of the [Cu(acac)₂] source. A deposition rate of 11 nm/min was obtained with Cu(acac)₂ as the source and the rate was 44.4 nm/min with the Cu(HFA)₂ source; both were obtained with the use of H₂O vapor. No selectivity was observed with either source for either substrate. The deposited films were fully characterized using XRD, LVSEM, SAXPS, and RBS.     

Investigation of oxidation inhibition properties of vaporized self-assembled multilayers on copper nanopowders

Stability against oxidation was investigated for vaporized self-assembled multilayers on nano-sized Cu powders. 100 nm-sized copper powders were coated with 1-octanethiol to make a passivation layer against oxidation.As a result, the surface resistivity of the coated and uncoated nano-sized copper powders differed by two orders of magnitude. XPS analysis was used to monitor changes in the amount of sulfur and oxygen on the surface of octanethiol-coated Cu nano powders over a period of time. While sulfur was detected for up to 75 days, the amount of oxygen increased dramatically after 35 days, indicating sign of partial oxidation. Furthermore, HR-TEM images showed that the octanethiol film was consistently 10 nm thick, for up to 35 days. After 35 days exposure to the air, the octanethiol film was partially damaged and its diffraction pattern detected the presence of Cu₂O. Based on these findings, vaporized octanethiol coating protected the copper nano powders from oxidation for up to 35 days. Therefore this oxidation inhibition property of VSAMs coating method on Cu powders achieves a great milestone toward inkjet printing technology.     

Melting of copper nanoclusters on a (100) copper surface

Melting of small copper clusters on a copper surface is simulated using the molecular dynamics method. The melting temperature of the (100) Cu surface is found to be lower than that of the bulk material. The melting temperature of clusters is shown to be a nonmonotonous function of their size.     

Strain-driven morphology of Si1-xGex islands grown on Si(100)

A study has been carried out on the morphology and structure of three-dimensional (3D) SiGe islands grown by molecular beam epitaxy (MBE) on Si(100) substrates. Samples of Si1-xGex alloys have been prepared to investigate the effects either of the alloy composition or of the growth temperature. Atomic force microscopy (AFM) evidenced the growth of 3D islands and transmission electron microscopy (TEM) demonstrated wetting layer growth on Si(100), independently on the deposition conditions. Energy dispersive spectroscopy (EDS) micro-analyses carried out on cross-sections of large Si1-xGex islands with defects allowed a measurement of the Ge distribution in the islands. To the best of our knowledge, these have been the first experimental evidences of a composition change inside SiGe islands. The interpretation of the experimental results has been done in terms of strain-enhanced diffusion mechanisms both of the growing species (Si and Ge) and of small islands.     

Growth of partially strain-relaxed Si1-yCy epilayers on (100)Si

1-y C_y epilayers were grown by MBE on (100) Si single-crystal substrates either directly on a dislocation-free or on a highly dislocated Si buffer layer. The orientation of the epilayers and their strain status were measured by double-crystal X-ray diffraction. Cross sections were prepared for TEM investigations. Epitaxial layers of about 130 nm thickness and carbon contents up to [%at.]1.38 grown on top of dislocation-free 1-μm-thick Si buffer layers were fully strained. In TEM bright field images, no dislocations were found. In order to introduce a high dislocation density in the Si buffer layer, the native oxide on the substrate was only partially removed prior to growing the Si buffer. A Si_1-yC_y film grown on top of that highly dislocated buffer layer showed a partial stress relaxation (a_∥=5.429 Å<a_si=5.431 Å). The large FWHM of transverse rocking scans through the Bragg reflection corresponding to the epilayer indicates a high defect density. TEM cross-section micrographs showed an extension of threading dislocations from the Si buffer layer into the Si_1-yC_y layer. Received: 22 April 1998/Accepted: 22 April 1998     

New self-limiting assembly model for Si quantum rings on Si(100)

We propose a new self-limiting assembly model for Si quantum rings on Si(100) where the ring's formation and evolution are driven by a growth-etching competition mechanism. The as-grown ring structure in a plasma enhanced chemical vapor deposition system has excellent rotational symmetry and superior morphology with a typical diameter, edge width, and height of 150-300, 10, and 5 nm, respectively. Based on this model, the size and morphology can be controlled well by simply tuning the timing procedure. We suggest that this growth model is not limited to certain material system, but provides a general scheme to control and tailor the self-assembly nanostructures into the desired size, shape, and complexity.     

New experimental studies on the adsorption of K on Si(100) and Si(111)

We report additional experimental characterization of the adsorption of K on Si(100) and Si(111). Our AES data reveal a layer-by-layer growth of K at room temperature on both surfaces. Measurements of the work function change on K adsorption present a minimum at a K coverage of half a monolayer. Furthermore, we find evidence for an incomplete charge transfer in contradiction to recent calculations. Our data could provide a solid basis to perform calculations in this interesting model system.     

AES-depth-profiling of thin annealed Pt-films on Si(100)

Thin PtSi films can be grown by evaporating Pt on Si(100) at RT and subsequent annealing of the system at 600–700 K. Contaminants like oxygen are known to have a strong influence on this reaction. In the present study we concentrate on the effect of oxygen partial pressure during the annealing on the silicide growth process. Under proper vacuum conditions annealing at 500 K leads to a homogeneous Pt₂Si film which reacts around 600 K completely to PtSi. A substantial oxygen partial pressure ( 0.1 mbar) in contrast results in an incomplete reaction in the same temperature range: unreacted platinum remains at the surface separated from the silicide by an oxygen enriched layer.Presented at the Seminar on Secondary Electrons in Electron Spectroscopy, Microscopy, and Microanalysis, Chlum (The Czech Republic), 21–24 September, 1993.This work was supported by Deutsche Forschungsgemeinschaft (DFG) through Sonderforschungsbereich 292.We thank Dr. W. Platz (Deutsche Aerospace AG, Ottobrunn) for providing us with Pt evaporated Si-wafers and Th. Hierl (Lehrstuhl für Angewandte Physik, University of Erlangen-Nürnberg), who performed the RBS measurements for AES calibration.     

Energetics of atomic hydrogen diffusion on Si(100)

We present first principles calculations of the potential energy surface for the diffusion of a single hydrogen atom on Si(100)2 × 1. Surface relaxation is found to be very important for the energetics of diffusion. A strong anisotropy is predicted for hydrogen motion: H should diffuse mainly along dimer rows, where activation energies are ~ 1.3 eV, while the barrier for row-to-row hopping is ~ 0.5 eV higher. Our results indicate that diffusion can be considered a fast process compared to H₂ recombinative desorption.     

Reactive epitaxy of cobalt disilicide on Si(100)

The growth of cobalt disilicide on the Si(100) surface by reactive epitaxy at T=350°C was studied within the 10–40 ML cobalt coverage range. A new method of mapping the atomic structure of the surface layer by inelastically scattered medium-energy electrons was employed. The films thus formed were shown to consist of CoSi₂(221) grains of four azimuthal orientations turned by 90° with respect to one another. This domain structure originates from substrate surface faceting by (111) planes, a process occurring during silicide formation. B-oriented CoSi₂(111) layers grow epitaxially on (111) facets.