2,5—二甲基—3,4—二乙酰基—1—（3—硝基苯基）吡咯的合成及晶体 …

在酸性介质中,３,４－二乙酰基－２,５－己二酮与硝基苯胺作用,满意地得到了２,５－二甲基－３,４二乙酰基－１－（硝基苯基）吡咯,用ＩＲ、＾１ＨＮＭＲ、高分辨质谱等对其进行了表征,并用Ｘ射线衍射测定了２,５－二甲基－３,４－二乙酰基－１－（３－硝基苯基）吡咯的晶体结构。该晶体属单斜晶系,Ｐ２１／Ｃ空间群。晶体学数据如下：ａ＝０．９３７５（ａ）ｎｍ,ｂ＝１．２８１４（２）ｎｍ,ｃ＝１．２９８５（１）ｎ     

1—苯甲酰基—3—（2—氯苯基）硫脲单晶生长及其倍频性能

本文报道了新型光学晶体１－苯甲酰基－３－（２－氯苯基）硫脲的单晶生长及其倍频性能，用溶液降温法在氯溶液中长出菱形块状晶体，并对分子结构和晶体结构对其晶体生长及倍频性能的影响作了探讨。     

Bridgman growth of CdxHg1−xTe— A review

Recent developments in the bulk Bridgman growth method for Cd_xHg_1−xTe are reviewed. Both melt mixing and heat flow control techniques have been applied in attempts to produce more uniform material in terms of composition. In the U.K. work has concentrated on application of the Accelerated Crucible Rotation Technique (ACRT) to achieve the required uniformity improvements. Elsewhere, various means to control isotherm shape have been used with the same aim. The ultimate use of the material is in infra-red detectors and Bridgman grown Cd_xHg_1−xTe has produced these successfully for both photoconductive and photovoltaic applications.     

Extrinsic doping of CdxHg1−xTe— A review

Extrinsic doping by elements which are stable to subsequent processing will become increasingly important in future infra-red device structures based on Cd_xHg_1−xTe. This paper reviews the incorporation and activation of dopants in the most widely used bulk and epitaxial growth methods. Stoichiometry at the growth temperature is shown to be the critical factor affecting dopant activation. Various factors, including stoichiometry, can affect the as-grown electrical properties and the importance of determining the type of conduction in the as-grown state, if successful extrinsic doping is to be accomplished, is stressed. Data on dopant segregation behaviour, in growth from liquids, acceptor ionization energies and carrier lifetimes are also presented and their importance is discussed.     

新型含氟液晶—8．1—（4′—乙基—联苯基）2—（4—烷氧基—2，3，5，6—四氟基基）乙炔的合成及相态研究

设计，合成了1-(4′-乙基-联苯基)2-(4-烷氧基-2，3，5，6-四氟基基）乙炔的液晶化合物。用偏光显微镜以1及DSC确定了它们的液晶相态，它们均为向列相液晶，并与相类似全碳氢类液晶化合物进行比较。     

高质量GdxY1—xCOB晶体生长及其1．064μm二、三倍频非临界相位匹配性质

本文介绍了高质量非线性光学晶体GdxY1-xCa4O(BO3)3(GdYCOB)的生长,在这类晶体的Y向实现了1．064μm激光的Ⅱ类二倍频（SHG）和Ⅰ类三倍频（THG）的非临界相位匹配（NCPM）;在x=0.20的晶体中实现倍频NCPM,基频输入功率为110mW时,输出的532nm绿光为40.3mW,转换效率达36．7％,在x=0.22的晶体中实现三倍频的NCPM,输入功率为133mW时,输出的355nm紫外光为19.7mW,在输入功率为80mW时,转换效率为21％。     

半导体激光泵浦非晶态La1—xNdxP5O14的激光特性研究

测量了非晶态五磷酸镧钕（Ｌａ１－ｘＮｄｘＰ５Ｏ１４，ＬＮＰＰ）材料在７９０￣１１００ｎｍ波长范围内的吸收光谱，并对其半导体激光泵浦下的激光特性进行了研究。采用平凹腔（Ｒ＝５０ｍｍ，Ｌ＝４０ｍｍ），输出耦合率为Ｔ＝１％，泵浦光斑半径为１８０μｍ时，其斜效率达３４．６％。其近共心腔时的阈值为２１μＪ。     

熔体生长4‘—硝基亚苄基—3—丙酰胺基—4—甲氧基苯胺（MNBA—Et）晶体

用引上法第一次从熔体中生长了有机晶体４－硝基亚苄基－３－丙酰胺基－４－甲氧基苯胺（ＭＮ－ＢＡ－Ｅｔ）讨论了生长条件并对ＭＮＢＡ－Ｅｔ熔体的性质进行了研究。