Surface modifications of TiN coating by pulsed TEA CO2 and XeCl lasers

Interactions of a transversely excited atmospheric (TEA) CO₂ laser and an excimer XeCl laser, pulse durations ∼2 μs (initial spike FWHM ∼100 ns) and ∼20 ns (FWHM), respectively, with polycrystalline titanium nitride (TiN) coating deposited on high quality steel AISI 316, were studied. Titanium nitride was surface modified by the laser beams, with an energy density of 20.0 J/cm² (TEA CO₂ laser) and 2.4 J/cm² (XeCl laser), respectively. The energy absorbed from the CO₂ laser beam is partially converted to thermal energy, which generates a series of effects such as melting, vaporization of the molten material, shock waves, etc. The energy from the excimer XeCl laser primarily leads to fast and intense target evaporation. The calculated maximum temperatures on the target surface were 3770 and 6300 K for the TEA CO₂ and XeCl lasers, respectively. It is assumed that the TEA CO₂ laser affects the target deeper, for a longer time than the XeCl laser. The effects of the XeCl laser are confined to a localized area, near target surface, within a short time period.Morphological modifications of the titanium nitride surface can be summarized as follows: (i) both lasers produced ablation of the TiN coating in the central zone of the irradiated area and creation of grainy structure with near homogeneous distribution; (ii) a hydrodynamic feature, like resolidified droplets of the material, appeared in the surrounding peripheral zone; (iii) the process of irradiation, in both cases, was accompanied by appearance of plasma in front of the target.Target color modifications upon laser irradiation indicate possible chemical changes, possibly oxidation.     

用于薄膜沉积的XeCl激基激光器研制

以镀制半导体薄膜、巨磁薄膜、金刚石及其它薄膜,外延生长及后续的光刻,激光与物质的相互作用、等离子体研究为目的,设计、研制了脉冲放电激励的XeCl激基激光器.试验结果表明:激光脉宽18ns,单脉冲能量150mJ,矩形光斑大小2cm×1cm,束散角3mrad,最高重复频率5HZ.与同类激光器相比,具有结构简单、造价低廉、性能稳定等特点.     

基于准分子激光器火焰中OH自由基测量技术研究

介绍了利用XeCl准分子激光器作为光源,测量酒精喷灯火焰中OH自由基浓度的实验方法与结果分析。以XeCl准分子激光器作为光源,采用Herriott结构多次反射池扩展光程至2 560 m,利用酒精喷灯作为OH自由基发生器,使用光谱分辨率为3.3 pm的高分辨中阶梯光栅光谱仪作为光谱采集系统。详细描述了应用不包含etaloning结构的XeCl准分子激光器作为光源的原因,如何去除XeCl准分子激光器反应腔腔体中的水汽干扰等。选取308.145～308.175 nm波段范围对OH自由基浓度进行了反演,并与利用氙灯作为光源测量酒精喷灯中OH自由基浓度的结果进行了对比。     

Study of Nanocrystalline Diamond Film Deposited Rapidly by 500 W Excimer Laser

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Study of Nanocrystalline Diamond Film Deposited Rapidly by 500 W Excimer Laser

High quality nanocrystalline diamond film deposited rapidly by an XeCl excimer laser operated at high laser power (500 W) and repetition rate (300～500 Hz) is presented. A high deposition rate, 250 nm/thousand pulses, was obtained. The effects of laser energy fluence and repetition rate on the deposition of diamond film were investigated.     

准分子激光的光束波面测量技术

 准分子激光在激光光刻和微细加工中有广泛的应用，要求激光具有好的稳定性和光束波面均匀性。介绍了准分子激光的波面特性以及波面分析测量技术。用波面分析仪对XeCl和ArF激光特性进行全面的测量和评估，给出了主要参数的测量结果，重点分析了光束均匀性。     

Influence of the laser wavelength on the epitaxial growth and electrical properties of La0.8Sr0.2MnO3 films grown by excimer laser-assisted MOD

Epitaxial La_1−xSr_xMnO₃ (LSMO) films were prepared by excimer laser-assisted metal organic deposition (ELAMOD) at a low temperature using ArF, KrF, and XeCl excimer lasers. Cross-section transmission electron microscopy (XTEM) observations confirmed the epitaxial growth and homogeneity of the LSMO film on a SrTiO₃ (STO) substrate, which was prepared using ArF, KrF, and XeCl excimer lasers. It was found that uniform epitaxial films could be grown at 500 °C by laser irradiation. When an XeCl laser was used, an epitaxial film was formed on the STO substrate at a fluence range from 80 to 140 mJ/cm² of the laser fluence for the epitaxial growth of LSMO film on STO substrate was changed. When the LaAlO₃ (LAO) substrate was used, an epitaxial film was only obtained by ArF laser irradiation, and no epitaxial film was obtained using the KrF and XeCl lasers. When the back of the amorphous LSMO film on an LAO substrate was irradiated using a KrF laser, no epitaxial film formed. Based on the effect of the wavelength and substrate material on the epitaxial growth, formation of the epitaxial film would be found to be photo thermal reaction and photochemical reaction. The maximum temperature coefficient of resistance (TCR) of the epitaxial La_0.8Sr_0.2MnO₃ film on an STO substrate grown using an XeCl laser is 4.0%/K at 275 K. XeCl lasers that deliver stabilized pulse energies can be used to prepare LSMO films with good a TCR.     

微量低电离电位的添加物对XeCl准分子激光输出的影响

本文报道在XeCl准分子激光器中添加微量的氯苯(C_6H_5Cl)或四氯化碳(CCl_4),使激光输出能量提高约16％。     

XeCl准分子激光在铅蒸气中的高效率受激电子喇曼散射

本文报道了采用非稳腔XeCl准分子激光泵浦铅蒸气获得52%喇曼能量转换效率.比较了稳腔与非稳腔XeCI激光泵浦下的喇曼转换特性.     

Performance improvement of an x-ray preionized XeCl laser of very small discharge volume

Increasing the preionization electron density is found to be an effective method for improving the output performance of discharge-pumped excimer lasers at high gas pressures when the power-supply voltage becomes a limiting factor. In a small volume (2 cm³), x-ray preionized discharge, orders of magnitude improvement in XeCl laser power output (up to 400 kW) and pulse energy (up to 26 mJ) over previously reported results have been found possible using this method. Modifications to the low energy x-ray source and discharge system leading to these improvements are described. Various laser output characteristics are also presented and discussed.     

低真空下紫外激光烧蚀铜诱导发光的机理

采用时间与空间分辨的光谱测量技术,测量了在低真空下XeCl紫外激光烧蚀金属Cu诱导产生等离子体发光羽的发射光谱随时间和空间的强度分布,利用快速同步照相的方法获得了发光羽的相片,结果发现发光羽的不同区域有不同的颜色特征。根据实验结果建立了非常可能的激光烧蚀诱导发光的理论模型,认为不同区域的主要发光机理不同,连续辐射背景光来自近靶处高能电子的运动而产生的轫致辐射;原子线的产生来自电子碰撞传能以及电子与离子的复合激发;离子线的产生来自电子与离子碰撞传能激发。此模型不仅能解释单一激发模型所能解释的实验现象,而且还能够很好地解释单一模型所不能解释的实验现象,低真空下紫外激光烧蚀铜诱导发光的机理与常压下相似,在此实验条件下可以更准确地揭示诱导发光的机理。     

Continuous operation up to 3 kHz in a discharge-pumped XeCl excimer laser

Continuous operations at a high repetition rate up to 3 kHz for discharge-pumped XeCl excimer laser are presented. The dependence of the clearing ratio on laser-gas pressure and input energy densities is studied. It was found that suitable laser-gas pressures minimize the clearing ratio for various input-energy densities. It is also shown that few density disturbances in the discharge region are induced by gas heating in a discharge-pumped XeCl excimer laser with low input-energy density     

电子束泵浦XeCl准分子激光器及应用

为了获得高能紫外激光输出,开展了电子束泵浦XeCl准分子激光技术研究。详细介绍了四向电子束泵浦准分子激光装置的工作原理和结构特征,简述Marx发生器的放电电压、放电电流,激光气室中的沉积能量,激光脉冲能量、脉宽等参数的测量方法;研究了电子束泵浦XeCl准分子激光输出特性,得到了激光脉冲能量随激光气室内混合气体气压变化的规律,当激光器的充电电压为81kV时,获得了能量100J、脉宽200ns的XeCl准分子激光输出,其本征效率约为3.2%。并且开展了XeCl准分子激光辐照涂层材料力学特性研究,采用微型红外通光冲量探头测量不同条件下激光辐照涂层材料的冲量耦合系数,在常压空气环境中的冲量耦合系数约为8.32×10-5 N·W-1。     

强流电子束泵浦XeCl准分子激光动力学模型

强流电子束泵浦XeCl准分子激光动力学模型由三部分组成,即电子束能量沉积的计算;电子温度、电子反应速率的计算和化学/激光动力学。这个模型可以准确地预报小信号增益、吸收等激光特征量的时间变化规律。 该模型是在文献[1]、[2]、[3]报导的动力学模型的基础上提出的。采用四阶龙格_库塔法在VAX—11/780机器上进行数值求解。 计算给出XeCl准分子激光反应过程中各种粒子浓度、小信号增益、吸收、输出光强、激发速率以及平均电子能量随时间的变化规律。计算结果表明本征效率是激发速率,电流密度和工作气体(Ne/Xe/HCl)的各分压比的函数。 该模型可为高功率准分子激光器的研制提供设计参数和最佳实验条件。     

准分子激光线宽压缩方法的研究

介绍了准分子激光线宽压缩的各种方法及其各自特点,并用单个标准具对308nmXeCI准分子激光进行了线宽压缩实验。     

Some design limitations for large-aperture high-energy per pulse excimer lasers

Summary Some limitation problems for gas discharge excimer lasers, when scaled to a high pulsed energy output with high repetition rate are discussed. As an example, we present some experimental results obtained with an X-ray preionized (10×10×100) cm³ active volume, low-repetition-rate-operated gas discharge XeCl laser system. ENEA student. ENEA guest.     

电子束泵浦百焦耳级准分子激光实验研究

利用“闪光二号”相对论电子束加速器研制了百焦耳级ＸｅＣｌ和ＫｒＦ准分子激光器，激光器激活体积２４ｌ，输出口径２０×２０ｃｍ２，泵浦功率密度１．５～２．０ＭＷ／ｃｍ３。ＸｅＣｌ激光器最大能量１３６Ｊ，波长３０８ｎｍ，脉宽５０～１００ｎｓ，峰值功率１．５ＧＷ，采用虚共焦非稳腔技术，束散角达１．３ｍｒａｄ；ＫｒＦ激光最大能量１５７Ｊ，波长２４８ｎｍ，脉宽８０～１００ｎｓ，峰值功率２ＧＷ。     

用激光干涉法诊断准分子激光在YBa_2Cu_3O_(7-δ)靶面激励等离子体的电子密度

利用激光标准干涉法诊断了准分子激光(XeCl,308 nm)在YBa_2Cu_3O_(7-σ)超导靶面激励等离子体的电子密度.结果表明在入射激光功率密度为3×10~8W/cm~2,本底真空度为1.33～13.3 Pa的条件下,等离子体电子密度为10~(16)～10~(17)/cm~3.     

具有窄光致发光谱的纳米Si晶薄膜的激光烧蚀制备

采用XeCl脉冲准分子激光器，在10Pa的Ar气环境下，烧蚀高阻单晶Si靶，分别在距靶3cm的玻璃和单晶Si衬底上制备了纳米Si薄膜. 相应的Raman谱和x射线衍射谱均证实了薄膜中纳米Si晶粒的形成. 扫描电子显微镜图像显示，所形成的薄膜呈均匀的纳米Si晶粒镶嵌结构. 相应的光致发光峰位出现在599nm，峰值半高宽为56nm，与相同参数下以He气为缓冲气体的结果相比，具有较窄的光致发光谱，并显示出谱峰蓝移现象. 关键词： 纳米Si晶粒 脉冲激光烧蚀 薄膜形貌 光致发光     

C60薄膜的准分子激光刻蚀及形貌分析

报道了准分子ＸｅＣｌ（３０８ｎｍ）紫外激光刻蚀Ｃ６０膜的实验研究及对刻蚀薄膜的形貌分析。基于形貌分析的结果提出其刻蚀机理。