Stress-induced splitting of the conduction bands of GaAs and GaSb

The splitting induced by a [110] strain in the conduction bands of GaAs and GaSb can be obtained from the measured spin relaxation of photoexcited carriers. These experimental results are shown to be in satisfactory agreement with predictions based on $\text{k}$.$\text{p}$ perturbation theory, which use recently calculated values of the coupling between the Г₁ and the two nearest Г₁₅·bands induced by the strain.     

Photoelectron diffraction effects in XPS angular distributions from GaAs(110) and Ge(110) single crystals

Angular distribution measurements of XPS intensities have been made for various spectral lines from GaAs(110) and Ge(110) single-crystal surfaces. Observed angular distribution curves (ADC's) showed steep intensity variations and sharp peaks due to X-ray photoelectron diffraction (XPED) phenomena. The effects of the type of transition process (photoelectron or Auger), electron kinetic energy and crystal structure on the XPED patterns were examined. Considerably different ADC patterns were observed for high-energy photoelectrons and Auger electrons and for low-energy photoelectrons. ADC's for Ga 3d, As 3d and Ge 3d showed almost the same patterns for scans of the type [110] → [100] → [1$\text{1}$0], but they showed substantially different patterns for [110] → [11$\text{1}$] → [00$\text{1}$] scans. These features correspond well with the structural characteristics of GaAs and Ge crystals. A discussion of the applicability of XPS angular distribution measurements to the geometric analysis of crystal surfaces is presented.     

Adsorbate-induced surface resonances observed in photoemission from a (2 × 2)R45° sulphur layer on Pd(100)

Angular-resolved photoemission spectra from a $\text{(}\text{2}\text{×}\text{2}\text{)R45°}$ sulphur layer on Pd(100) reveal peaks independent of photon energy, which show strong dispersion in the electron energy range 3…9 eV relative to the vacuum level. The appearance of these levels can be correlated with absolute gaps in the projected bulk band structure of palladium. We interpret these features, which are also observed in secondary electron emission, as adsorbate-induced surface resonances above E_F. The sulphur 3p-derived levels below E_F show strong dispersion effects in the [110] but not in the [100] crystal azimuth. The projected band structure also shows that $\text{sd}$ hybridisation gives rise to an absolute gap at approximately this energy in the [110] $\text{(}\text{ΓX}\text{)}$ direction.     

Optical transitions on GaAs [110] surface

Modulation techniques have been employed in optical reflection measurements on GaAs [110] cleaved surface. Spectral bands at 2.62 and 2.83 eV observed for the light polarization $\text{E6[}\text{1}\text{10]}$ have been assigned to the surface state transitions. The E₁ and E₁ + Δ₁ bulk transitions were found to be sensitive to the surface conditions.     

Linear-chain antiferromagnetism in Ni(N2H5)2(SO4)2

The compound dihydrazinium bis(sulfato) niccolate(II), Ni(N₂H₅)₂(SO₄)₂, containing sulfato-bridged chains of Ni(II) ions, can be described as an antiferromagnetic Heisenberg linear-chain system. A reasonable agreement of susceptibility measurements in the temperature region 2–80K, with a theory developed by Weng for antiferromagnetic Heisenberg linear chains with spin S=1, is obtained for a value of the intra-chain interaction $\text{J}\text{k}\text{=?3.35K}$. Preliminary results of specific heat measurements, on the other hand, do not fit quite well using this model. The origin of this discrepancy is suggested to be a zero-field splitting of the single ion.     

Spin-glass behaviour of [La,Gd]B6 and [La,Dy]B6 alloys

Electrical resistance and absolute thermoelectric power measurements have been made in the temperature range between 2 and 30 K on a few polycrystalline specimens of [L$\text{a}$,Gd]B₆ and [L$\text{a}$,Dy]B₆ with different concentrations of rare earth ions. The resistance of these alloys varies as $\text{～ T}{}^{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$ which is characteristic of spin glasses at low temperature. The thermoelectric power of all specimens but one, shows a broad positive peak in the lower part of the temperature range and becomes negative at higher temperatures, a feature that is typical of a spin glass to paramagnetic phase transition. The exceptional specimen has a large Gd concentration and its thermoelectric power remains positive to higher temperatures than would be expected for a spin glass.     

Correlations and spin susceptibility of lowst-energy Cooper pairing in an antiferromagnet

Lowest-energy Cooper pairing of electron eigenfunctions in an antiferromagnetic metal is transformed to $\text{k}$-wave or nonmagnetic-Bloch-function space, where the pairing is resolved into wave-vector and spin components. The spin susceptibility is calculated using an eight-component field in Bloch function space.     

The rotational bands 12+[411]and 12−[541]in 175Lu

In a study of the γ-radiation emitted in the reaction ¹⁷⁶Yb(p, 2n) excited states of the nucleus ¹⁷⁵Lu up to spin I = $\text{13}\text{2}$ have been investigated. The main results concern the rotational bands $\text{1}\text{2}$⁺ [411]and $\text{1}\text{2}$^? [541]with the corresponding band heads found at 626.60 and 370.88 keV, respectively. The half-life of the $\text{1}\text{2}$⁺[411] level has been determined to be $\text{T}{}_{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}\text{= 10.7±0.5}\text{ns}$. Furthermore, the band heads $\text{3}\text{2}$^?[532]and $\text{3}\text{2}{}^{\mathrm{+}}$[411]are proposed at energies of 999.0 and 1150.8 keV, respectively. Experimental E1 transition probabilities between both $\text{K =}\text{1}\text{2}$ bands are compared with calculations including the Coriolis and pairing effects, as well as theoretically deduced quadrupole deformation parameters.     

Field-ion microscopy of GaAs and GaP

Clean surfaces of GaAs and GaP were studied by field-ion microscope (FIM). Field-ion images with ordered surfaces were first obtained in pure hydrogen, neon-50% hydrogen and pure neon gases at 78 K, by using channeltron electron multiplier arrays (CEMA). The field-ion images of GaAs were quite similar to those of GaP with respect to the surface structure and the image contrast. They showed the anisotropies of the ion emission and the surface structure between the [111] and $\text{[}\text{1}\text{1}\text{1}\text{]}$ orientations. Ring steps expected from a spherical surface were observed on the (111) and {100} planes, but not on the $\text{[}\text{1}\text{1}\text{1}\text{]}$ and {110} planes. The regional brightness of the FIM patterns was discussed in terms of the Knor and Müller model and the atomic and electronic structures of the surface. The image field of these crystals was much lower than that of metals usually used in FIM. For example, the image field strength for the hydrogen and GaAs system was about 1.1 V/Å. The reduction of the field necessary to image was also discussed in terms of the field penetration effect.     

Inelastic neutron scattering study of magnetic excitations in the helimagnetic and antiferromagnetic phases of NiBr2

The spin wave dispersion in NiBr₂ has been studied by medium and long wavelength inelastic neutron scattering in the [1 1 0], [1 0 0] and [0 0 1] directions at 4.2 and 30 K, i.e. in the incommensurate helical and collinear antiferromagnetic phases. The values of the intralayer Heisenberg exchange constant J_ij and XY anisotropy constant D at 4.2(30) K are J₀₁ 0.379(1)(0.379(1)), J₀₂ 0.0036(50)(0.0036(50)), J₀₃ - 0.105(5) (?0.105(5)), J′ - 0.0423(50)(?0.389(50))D 0.0364(50)(0.0290(50)), where J′; is the interlayer exchange constant. In fitting the 4.2 K data account is taken of the co-existence of three equivalent domains and of intensity arising from $\text{ω(}\text{q}\text{)}$ and $\text{ω(}\text{q ± k}{}_0\text{)}$ where $\text{k}{}_0$ is the wavevector of the helix. In the low frequency region of the dispersion curve such peaks are resolved. The results reinforce the hypothesis that in zero-field the commensurate-incommensurate phase transition is driven by fluctuations.     

Surface self-diffusion on Ni(110): Temperature dependence and directional anisotropy

The surface self-diffusion coefficients, D_s, on a Ni(110) crystal are measured by a mass transfer technique in [1$\text{1}$0] and [001] directions in the temperature range 773–1573 K. The surface cleanliness was checked by Auger electron spectroscopy. LEED investigations showed that the sinusoidal surface profile consisted of (110) terraces and monatomic steps. The temperature dependence of D_s can be expressed by $\text{D}{}_{\mathrm{s}}\text{[1}\text{1}\text{0] = 0.009}\text{exp}\text{(}\text{?17.5}\text{kcal}\text{mole}\text{· RT)}$ and $\text{D}{}_{\mathrm{<mtext>s</mtext>}}\text{[001] = 470}\text{exp}\text{(}\text{?45}\text{kcal}\text{mole}\text{· RT)}$ at temperatures below 1150 K. Theoretical values for the activation energies of surface migration were calculated in the framework of the pairwise interaction model. Together with an estimate for the formation energy of adatoms of $\text{16.3}\text{kcal}\text{mole}$, one obtains for the activation energy of surface self-diffusion 17 and $\text{51 kcal}\text{mole}$ for [1$\text{1}$0] and [001] direction, respectively. At T > 1150 K the anisotropy in D_s begins to vanish. Surface diffusion in [1$\text{1}$0] direction at T < 1150 K is most likely taking place by a simple adatom hopping process. Circumstantial evidence indicates that diffusion in [001] direction does not occur by a simple hopping process but by a more complex mechanism involving higher energy surface diffusion states. This isotropic process is suggested to take place for both directions at T < 1150 K.     

Calculation of electron-spin polarization in photoemission from Au(110)

We have calculated the spin polarization of electrons photoemitted by circularly polarized light from Au(110). Results for the spin polarization of the angular resolved photoyield are given for clean and contaminated surfaces for photon energies ?Ω up to 10 eV. In addition we calculated the spectrum for energy resolved photoelectrons for $\text{?Ω = 8.5 eV}$. Our calculations demonstrate that from an analysis of the spin polarization of energy resolved photoelectrons detailed information on the electronic structure of solids follows.     

Directional anisotropy of surface self-diffusion on Pt(110)

The rate of surface self-diffusion on a Pt(110) single crystal in the [1$\text{1}$0] and [001] directions was measured at 1200–1750 K by monitoring the decay of a sinusoidal surface profile. The surface diffusion rate in the [1$\text{1}$o] direction was much faster than in the [001] direction. The activation energy of surface self-diffusion was 1.70 and 3.16 eV for the [1$\text{1}$0] and [001] directions, respectively, in good agreement with theoretical estimates. For large amplitudes of the profile the decay rate for the [001] direction was also dependent on the amplitude. This behavior can be explained by the appearance of (111) facets on the profile, which cause a retardation of the profile decay.     

The parallel magnetic susceptibility and specific heat of the antiferromagnetic Ising linear-chain system with spin S = 2, 52, and 3

The parallel magnetic susceptibility and specific heat of the antiferromagnetic Ising linear-chain system with spin S = 2, $\text{5}\text{2}$, and 3 are calculated using the matrix approach. The results for spin $\text{S =}\text{1}\text{2}$, 1, $\text{3}\text{2}$, and 2 are checked against known results for these cases.     

Dependence of the GaAs (110) surface electronic state dispersion curves on the surface relaxation angle

The surface state dispersion curves E($\text{k}$) of the dangling bond states near the fundamental band gap, C₃ and A₅, are computed for both the established θ?27° model and the recently proposed θ?7° model of the (110) surface relaxation of GaAs, where θ is the surface bond rotation angle. The two models produce surface state dispersion curves that are similar to one another and to the data.     

Magnetoreflectance of the Γ6 – Γ8 exciton ground state in cubic ZnSe

Magnetoreflectance measurements on the ground state of the Γ₆ – Γ₈ free exciton in cubic ZnSe in magnetic fields up to 18 T are reported. The splitting between the |1, ±1〉 states was derived from the measured difference spectrum between σ⁺ and σ^--polarized reflectance in Faraday configuration. The splitting between the two states corresponding to |2, 0〉 and |1, 0〉 at B = 0 was determined by means of a lineshape analysis. We derive an electron g-factor g = 1.48 ± 0.25, in reasonable agreement with existing k · p calculations, and obtain an effective hole g-value $\text{K}\text{?}\text{= -0.26±0.06}$. In addition, we find an upper limit for the short range electron-hole spin exchange energy Δ ? 0.1 meV, which is considerably smaller than values, which is considerably smaller than values reported in the literature, but agrees with recent results on ZnTe obtained by uniaxial stress and also magnetoreflectance measurements.     

Spin waves in an Invar alloy (Fe0.65Ni0.35)

The spin wave dispersion relation in an Invar alloy Fe_0.65Ni_0.35 has been measured at 4.2 K in the [111] direction by neutron inelastic scattering.Well defined magnon groups have been observed up to an energy transfer of about 80 meV. The spin wave dispersion is well described by ?ω=Dq²(1?βq²) with $\text{D=143}\text{meV}\text{A}\text{?}$ and $\text{β=0.12}\text{A}\text{?}{}^2$. The value of D is in accord with the value extrapolated from other neutron scattering results at higher contents of Ni and disagrees with spin wave resonance results.No trace of γ-iron type antiferromagnetic order could be detected at 4.2 K in this alloy by elastic neutron scattering measurements.     

Electronic structure of the GeGaAs (111) and (111) heterojunctions

The electronic density of states for GeGaAs (111) and ($\text{1}$$\text{1}$$\text{1}$) heterojunctions has been calculated. No interface states in the fundamental gap are found. A sizeable density of interface states below the top of the valence band is found for GeGa bonds-(111) junctions-interface states in the ionic gap are reported. The effect of varying the amount of the valence band discontinuity across the interface is discussed.     

Magnetostriction of antiferromagnetic FeGe2

The anisotropic magnetostriction of FeGe₂ is measured for magnetic field along the [1 0 0] and [1 1 0] axes at temperature 4.2 K and along [1 0 0] from 77 to 300 K. The behaviour is consistent with spin reorientation in the basal plane. The saturation magnetostriction and the characteristic field required to produce saturation decrease with increasing temperature and approach zero at the lower transition temperature, $\text{T}{}_{\mathrm{K}}\text{? 265}$ K. This suggests that the spins flip from the basal plane into the direction of the tetragonal [0 0 1] axis at T_K.     

The hydrostatic pressure derivatives of the elastic constants of indium and an indium cadmium alloy

The hydrostatic pressure derivatives of the elastic stiffness constants of indium and indium-3.4 at.% cadmium alloy single crystals have been obtained from pulse echo overlap measurements of the dependence of ultrasonic wave velocities upon pressure. The softest zone centre acoustic phonon mode in indium is a shear mode propagating k along the [101] direction rather than that (k[110], e[11?0]) which drives the ferroelastic phase transition in the indium-cadmium alloys. The derivative δ((C₁₁ – C₁₂)/2)/δP is positive, accounting for the stability of the fct structure of indium under high pressure. Using the quasiharmonic, anisotropic continuum model the acoustic mode Grüneisen parameters have been calculated and are discussed in terms of mode softening. The high temperature limiting value$\text{\$}\text{?}$γ_H (= 2.56) of the mean acoustic mode Grüneisen parameter is found to be close to the thermodynamic Grüneisen parameter γ^th (=2.5).