Geometric frustration in CuV2S4

A cubic spinel conductor CuV₂S₄, containing the corner-sharing tetrahedral lattice of V, was investigated. Above a structural transition at 90 K, the ⁵¹V nuclear spin-relaxation rate 1/T₁ is comparatively large in magnitude and tends to saturate at higher temperatures, indicating that the V lattice behaves as a nearly antiferromagnetic metal. By substituting nonmagnetic Sn for V, the susceptibility turns to be of Curie-Weiss type and temperature-independent, suggesting recovery of hidden spins as a result of a partial release of the frustration. These results lead to the conclusion that CuV₂S₄ is an itinerant-electron frustrated system as YMn₂. The CDW transition of CuV₂S₄ accompanied by a tetragonal distortion which may be understood as a result of lowering of interaction dimensionality inherent to the corner-sharing tetrahedral lattice.     

Electrical properties of FeCr2S4 and CoCr2S4

Resistivity and magnetoresistance are measured as functions of temperature (77–450 K) on several FeCr₂S₄ and CoCr₂S₄ single crystals (as-grown, annealed in vacuum, annealed in S-atmosphere, and doped) and found to be very sensitive to these treatments. These results are discussed on the basis of the model consisting of donor level due to S-deficiencies in addition to Fe²⁺ and Cr²⁺ levels.     

Vibrational modes in ZnAl2S4 and CdIn2S4 crystals

Infrared reflectivity spectra and Raman scattering of the ZnAl₂S₄ and CdIn₂S₄ crystals have been investigated. Reflectivity spectra contours were calculated and phonon parameters and dielectric constants were determined. Effective charges for the Zn, Cd, In and S ions of these materials were determined.     

Electric and magnetic properties of the system between Cr3S4 and VCr2S4

The electrical resistivity and magnetization of V_xCr_3?xS₄ (x = 0.0 - 1.0) have been measured. Weak ferromagnetic moments are observed at low temperatures for x ≠ 0.0. Curie temperatures are determined from magnetization curves and resistivity anomalies.     

Radiative properties of Eu in BaGa2S4

A photoluminescence study of the blue-green emitting BaGa₂S₄:Eu²⁺ phosphor is reported. Diffuse reflectance, excitation and emission spectra were examined with the aim to enlarge the fundamental knowledge about the emission of the Eu²⁺ rare earth ion in this lattice. The thermal dependence of the radiative properties and the influence of the Eu²⁺ concentration were investigated. The Stokes shift, the crystal field splitting and the activation energy of the thermal quenching were determined. By combining these results with data available in literature, we discussed the radiative properties of the BaAl₂S₄:Eu²⁺ blue phosphor in relation with those determined in this study for the isostructural BaGa₂S₄:Eu²⁺ phosphor.     

Heat capacity and thermal expansion of CdCr2Se4 and CdCr2S4

The thermodynamic properties of the spinel ferromagnetic compounds CdCr₂Se₄ and CdCr₂S₄ have been investigated by making heat capacity and thermal expansion measurements on single crystals. For both compounds, the ferromagnetic transition is marked by λ-type thermal anomalies, and the results provide a pressure dependence of the transition temperatures that is in agreement with direct measurements. Below the transition, CdCr₂S₄ shows an anomalous heat-capacity contribution and negative thermal expansion, which are in contrast to the conventional behavior found in CdCr₂Se₄.     

Raman and infrared spectra of CdIn2S4 and ZnIn2S4

Four one-phonon Raman lines have been found in CdIn₂S₄ (ZnIn₂S₄) spinels at 92 (72) cm^-1, 186 (184) cm^-1, 246 (253) cm^-1, and 367 (372) cm^-1 for incident photon energies well below the energy gap E_G ～ 2.4 (2.2) eV at 300 K. For photon energies close to E_G, the 367 cm^-1 mode underwent a resonant enhancement in CdIn₂S₄ and four infrared active but Raman forbidden F_1u modes appeared in the CdIn₂S₄ and ZnIn₂S₄ Raman spectra: TO modes at 226 (221) cm^-1 and 309 (312) cm^-1, and LO modes at 274 (272) cm^-1 and 340 (342) cm^-1.     

Structural,elastic and thermodynamic properties under pressure and temperature effects of MgIn2S4 and CdIn2S4

A density functional-based method is used to investigate the structural, elastic and thermodynamic properties of the cubic spinel semiconductors MgIn₂S₄ and CdIn₂S₄ at different pressures and temperatures. Computed ground structural parameters are in good agreement with the available experimental data. Single-crystal elastic parameters are calculated for pressure up to 10 GPa and temperature up to 1200 K. The obtained elastic constants values satisfy the requirement of mechanical stability, indicating that MgIn₂S₄ and CdIn₂S₄ compounds could be stable in the investigated pressure range. Isotropic elastic parameters for ideal polycrystalline MgIn₂S₄ and CdIn₂S₄ aggregates are computed in the framework of the Voigt–Reuss–Hill approximation. Pressure and thermal effects on some macroscopic properties such as lattice constant, volume expansion coefficient and heat capacities are predicted using the quasi-harmonic Debye model in which the lattice vibrations are taken into account.     

Transport properties of CdIn2S4 single crystals

Several transport properties have been studied on CdIn₂S₄ singlê crystals with different degrees of deviation from stoichiometry. The energy gap at 0 K was determined from the electrical measurements to be 2.2 eV. The anisotropy of the magnetoresistance effect was found and it was suggested that the minima of the conduction band were located at points along the [100] directions in k space. From an analysis of the mobility data it was found that the high resistivity of the samples is due to compensation of donors by acceptors introduced by excess sulphur. Several band parameters, the carrier scattering mechanisms and the impurity levels were determined. The thermal conductivity was measured from 4 K to 300 K and analysed by Callaway's formalism.     

Electrical and electrochemical properties of glass-ceramic electrolytes in the systems Li2S-P2S5-P2S3 and Li2S-P2S5-P2O5

Electrical and electrochemical properties of the 70Li₂S·(30 − x)P₂S₅·xP₂S₃ and the 70Li₂S·(30 − x)P₂S₅·xP₂O₅ (mol%) glass-ceramics prepared by the mechanical milling technique were investigated. Glass-ceramics with 1 mol% P₂S₃ and 3 mol% P₂O₅ showed the highest conductivity of 5.4 × 10^− 3 S cm^− 1 and 4.6 × 10^− 3 S cm^− 1, respectively. Moreover, these glass-ceramics showed higher electrochemical stability than the 70Li₂S·30P₂S₅ (mol%) glass-ceramic. From the XRD patterns of the obtained glass-ceramics, trivalent phosphorus and oxygen were incorporated into the Li₇P₃S₁₁ crystal. We therefore presume that the Li₇P₃S₁₁ analogous crystals, which were formed by incorporating trivalent phosphorus and oxygen into the Li₇P₃S₁₁ crystal, improve the electrical and electrochemical properties of the glass-ceramics. An all-solid-state cell using the 70Li₂S·29P₂S₅·1P₂S₃ (mol%) glass-ceramic as solid electrolyte operated under the high current density of 12.7 mA cm^− 2 at the high temperature of 100 °C. The cell showed an excellent cyclability of over 700 cycles without capacity loss.     

Band structure calculations on the layered compounds FeGa2S4 and NiGa2S4

For the compounds FeGa₂S₄ and NiGa₂S₄ band structure calculations have been performed by the ab initio plane wave pseudo-potential method. The valence charge density distribution points to an ionic type of chemical bonding between the transition metal atoms and the ligand atoms. Two models for the pseudo-potentials are used to calculate the band structures: (a) only s and p electrons and (b) also the d-shells of the transition metal atoms are included in the pseudo-potentials. The differences between these two cases of band structures are discussed. Energy gap formation peculiarities are analysed for both crystals. Zak's elementary energy band concept is demonstrated for the energy spectra of the considered crystals.     

Optical properties of the layered semiconductor ZnIn2S4

The wavelength modulated reflectivity spectrum of ZnIn₂S₄ in the range 1.5–8.0 eV is presented. The first absorption onset near 3.0 eV has been related to transitions from sulphur p-like and cation s-like valence bands to a sulphur first group p-like conduction band. Evidence was also found for the existence of two M₁-type singularities above 5.0 eV.     

On photoluminescence in HgGa2S4

In this paper, we investigate the kinetics of photoluminescence in excited crystals of HgGa₂S₄ which have recently been proposed for implementing tunable luminescent devices. From photoluminescence experiments, performed at various temperatures and excitation powers, it appears that two kinds of radiative recombination processes take place during crystal excitation. These originate two bands in emission spectra which were resolved by means of a fitting procedure. The dependencies of these bands on temperature and excitation power density are explained by means of a specific kinetic model. A broad band, peaking at about 1.8 eV, is ascribed to electron-hole tunnel recombinations occurring in associated donor-acceptor pairs, according to a Prener-Williams scheme. The second narrow band, peaking at about 2.3 eV, is ascribed to electron-hole recombinations occurring in centres presenting short () and long-life () excited states. At room temperature, owing to thermally activated relaxation from short- to long-life states, these centres saturate under relatively low excitation powers. The tunability of photoluminescence is a consequence of competition between monomolecular and bimolecular recombination processes.     

Cation ordering and crystal structures in AGa2X4 compounds (CoGa2S4, CdGa2S4, CdGa2Se4, HgGa2Se4, HgGa2Te4)

Single crystals of some AGa₂X₄ compounds (CoGa₂S₄, CdGa₂S₄, CdGa₂Se₄, HgGa₂Se₄, HgGa₂Te₄) were prepared by chemical vapour deposition and flux method.The X-ray structural investigations indicated blende or defect chalcopyrite structures.A simple relationship is suggested between the c/a ratio and the cationic sublattice ordering.     

Effective ionic charges in CdGa2Se4 and CdGa2S4

Available experimental data (Raman and Infrared) on the optic phonon spectra in defect chalcopyrite crystals CdGa₂Se₄ and CdGa₂S₄ are used to determine the dynamical ionic effective charges. The results are compared with those found in other ternary compounds as spinels and chalcopyrites. An emperical correlation between the normalized Szigeti charges and the optical dielectric constant is discussed.     

Photoelectrochemical properties of electrochemically deposited CdIn2S4 thin films

Thin films of CdIn₂S₄ have been deposited on to stainless steel and fluorine-doped tin oxide (FTO)-coated glass substrates from aqueous acidic bath using an electrodeposition technique. Ethylene diamine tetra-acetic acid (EDTA) disodium salt is used as complexing agent to obtain good-quality deposits by controlling the rate of the reaction. The different preparative parameters like concentration of bath, deposition time, bath temperature, pH of the bath have been optimized by the photoelectrochemical (PEC) technique in order to get good-quality photosensitive material. Different techniques have been used to characterize CdIn₂S₄ thin films. Optical absorption shows the presence of direct transition with band gap energy 2.17 eV. The X-ray diffraction (XRD) analysis of the as-deposited and annealed films showed the presence of polycrystalline nature. Energy-dispersive analysis by X-ray (EDAX) study for the sample deposited at optimized preparative parameters shows that the In-to-Cd ratio is almost 2 and S-to-Cd ratio is almost 4. Scanning electron microscopy (SEM) for samples deposited at optimized preparative parameters reveals that spherical grains are uniformly distributed over the surface of the substrate indicates the well-defined growth of polycrystalline CdIn₂S₄ thin film. PEC characterization of the films is carried out by studying photoresponse, spectral response and photovoltaic output characteristics. The fill factor (ff) and power conversion efficiency (η) of the cell are 69 and 2.94%, respectively.     

Giant magneto-reflectance of CoCr2S4

The magneto-reflectance of ferrimagnetic CoCr₂S₄ has been measured in the visible and near infrared. A very large magneto-dispersion is observed at about 600 cm^?1, which can be associated with crystal field transitions of divalent cobalt.     

Electronic structure of HgGa2S4

The electronic structure and chemical bonding in HgGa₂S₄ crystals grown by vapor transport method are investigated with X-ray photoemission spectroscopy. The valence band of HgGa₂S₄ is found to be formed by splitted S 3p and Hg 6s states at binding energies BE=3-7 eV and the components at BE=7-11 eV generated by the hybridization of S 3s and Ga 4s states with a strong contribution from the Hg 5d states. At higher binding energies the emission lines related to the Hg 4f, Ga 3p, S 2p, S 2s, Hg 4d, Ga LMM, Ga 3p and S LMM states are analyzed in the photoemission spectrum. The measured core level binding energies are compared with those of HgS, GaS, AgGaS₂ and SrGa₂S₄ compounds. The valence band spectrum proves to be independent on the technological conditions of crystal growth. In contrast to the valence band spectrum, the distribution of electron states in the bandgap of HgGa₂S₄ crystals is found to be strongly dependent upon the technological conditions of crystal growth as demonstrated by the photoluminescence analysis.     

First-principles calculations of electronic, optical and elastic properties of ZnAl2S4 and ZnGa2O4

The optimized crystal structures, band structures, partial and total densities of states (DOS), dielectric functions, refractive indexes and elastic constants for ZnAl₂S₄ and ZnGa₂O₄ were calculated using the CASTEP module of Materials Studio package. Pressure effects were modeled by performing these calculations for different values of external hydrostatic pressure up to 50 GPa. Obtained dependencies of the unit cell volume on pressure were fitted by the Murnaghan equation of state, and the relative changes of different chemical bond lengths were approximated by quadratic functions of pressure. Variations of applied pressure were shown to produce considerable re-distribution of the electron densities around ions in both crystals, which is evidenced in different trends for the effective Mulliken charges of the constituting ions and changes of contour plots of the charge densities. The longitudinal and transverse sound velocities and Debye temperatures for both compounds were also estimated using the calculated elastic constants.