The peculiarities of the low-energy ion scattering by polycrystal targets

In the present work, experimental and computer simulation studies of low-energy (E₀ = 80-500 eV) Cs⁺ ions scattering on Ta, W, Re target surfaces and K⁺ ions scattering on Ti, V, Cr target surfaces have been performed for more accurate definition of mechanism of scattering, with a purpose of evaluation of an opportunity of use of slow ions scattering as a tool of surface layers analysis. The choice of the targets was based on the fact that the ratios of atomic masses of target atoms and ions μ = m₂/m₁ were almost the same for all cases considered and greater than 1 (direct mass ratio) however, the difference of binding energies of target atoms in the cases of Cs⁺ and K⁺ scattering was almost twice as much. It has been noticed that the dependencies of the relative energy retained by scattering ions at the maximum of energy distribution versus the initial energy E_m/E₀ (E₀) have a similar shape in all cases. The relative energy retained by scattering ions increases while the initial energy of incidence ions decreases. The curves are placed above each other relative to the binding energies of target atoms, to show what this says about the influence of binding energy on a process of scattering of low-energy ions. The correlation between value of energy change maintained by an ion for different values of E₀ in the case of scattering by targets with different masses of atoms and its binding energies is experimentally established. The contrary behavior of the E_m/E₀ (E₀) dependencies concerning the target atom binding energy quantity E_b for cases with direct (μ > 1) and inverse (μ < 1) mass ratio of colliding particles is established. The comparison of experimental energy distributions with calculated histograms shows that the binary collision approximation cannot elucidate the abnormally great shift in the maxima of relative energy distributions towards greater energy retained by scattering ions.     

Reactive scattering of a supersonic oxygen atom beam O + I2

Reactive scattering of O atoms with I₂ molecules has been studied at an initial translational energy E = 43 kJ mol^-1 using a supersonic beam of O atoms seeded in He and E = 18 kJ mol^-1 using O atoms seeded in Ne. Velocity distributions of OI product were measured by cross-correlation time-of-flight analysis. Full contour maps of the differential reaction cross section were obtained which show predominantly rebound scattering at both initial translational energies. Scattering in the forward direction has a product translational energy distribution similar to that predicted for a long-lived collision complex but scattering in the backward direction has a much higher product translational energy. The greater predominance of rebound scattering observed for O + I₂ compared with O + Br₂ may be attributed to the greater exoergicity of the O + I₂ reaction. However, comparison with the O + IBr reaction which exhibits a long-lived collision complex mechanism indicates that the predominance of backward scattering for O + I₂ also arises from diminished forward scattering from larger impact parameter collisions.     

Light emission at the E1 and E1+Δ1 gaps in heavily doped p-type Ge and GaAs

We report the observation in heavily doped p-type germanium (N_h ≥ 10¹⁸cm^?3) of two weak light emission bands centered at the energies of the E₁ and E₁+Δ₁ interband gaps (2.22 and 2.42 eV at 80 K). These bands, which are 100% polarized, are found only for excitation with laser frequencies slightly above the gaps. We attribute them to photon scattering by inter-valence-band excitations of the holes associated with the heavy doping. The fact that the emission bands do not shift with the exciting laser frequency is assigned to a strong resonance enhancement of this scattering near the E₁ and E₁+Δ₁ gaps. We have also observed the corresponding light emission at the E₁ gap (3.0 eV) in p-type GaAs.     

Raman scattering and photoluminescence studies of two-dimensional electron systems in Ge/GaAs heterostructures

Resonant Raman scattering experiments on n-Ge/n-GaAs (100) heterostructures reveal transitions involving quasi-two-dimensional electron states in Ge-accumulation layers. The experiments were performed in the range of the E₁-gap of Ge. The electronic scattering transforms into E₁-luminescence as the laser energy is tuned above the resonance. Spectra obtained at higher excitation energies show luminescence bands associated with the E₁ and E₁ + Δ₁-gap of Ge. The latter results are compared with recent data for bulk heavily-doped Ge.     

Resonant raman scattering at the E1 energy gap of semiconductor crystals

We present a discussion of resonant Raman scattering by optical phonons at the E₁ energy gap of group IV and groups III–V compound semiconductor crystals (e.g., Ge and InSb). For allowed scattering by TO and LO phonons, the q-dependent “double resonant” two-band calculation of the Raman tensor may display destructive interference effects when the intermediate electron-hole pairs are uncorrelated. We also discuss the Franz-Keldysh mechanism of resonant electric field induced Raman scattering by LO phonons. The double resonance terms due to this mechanism will, for large electric fields, broaden and have its largest resonance enhancement at the energy gap.     

Resonant Raman scattering in GaP in the E0 − E0 + Δ0 region

Resonant enhancement of the cross section for Raman scattering by TO phonons in GaP at the E₀ and E₀ + Δ₀ gaps has been observed using a continuously tunable pulsed dye laser pumped by a nitrogen laser and a gated photon counting system. The resonance at the spin-orbit split E₀ + Δ₀ gap is much weaker than that at E₀ and has not been observed previously in first-order Raman scattering. The results are in good agreement with theoretical predictions.     

Electron screening in backward elastic scattering

Abstact: The elastic scattering cross sections, σ (E,θ), for the systems He+Ta and He+W have been measured at θ_lab=165° and E _lab=76.1 keV to 3.988 MeV using targets with a thickness of a few atomic layers. The results are smaller than the results given by the Rutherford scattering law, σ_R(E,θ), due to the effects of electron screening and can be described by σ(E,θ)/σ_R(E,θ)=(1+U_e/E)⁻¹, where U _e is an atomic screening potential energy. The deduced average value, U _e=28 ± 3 keV, is consistent with the Moliére- and Lenz-Jensen-models as well as electron binding energies. Received: 25 May 1998     

Optical and intervalley scattering in quantized inversion layers in semiconductors

The momentum relaxation time for scattering of electrons in quantized levels of an inversion layer on a semiconductor surface is calculated for interactions via optical and intervalley phonons. A selection rule is found which prohibits transitions between subbands belonging to the same valley or set of valleys, at least in the zero order to which these scattering processes may occur. Relaxation times for the zero-order interaction and the first-order interaction are obtained for intervalley phonons. The results are applied to the case of a (100)-silicon surface, with electrons in the three lowest subbands (with energy levels E₀, E₁, E'₀) of the two sets of valleys. Agreement with the experimental data of Fang and Fowler is good when the combined effects of intervalley and acoustic scattering are considered.     

Photoluminescence and resonant Raman scattering in N-doped ZnO thin films

A combination of studies on photoluminescence and resonant Raman scattering in N-doped ZnO thin films were carried out at room temperature. In the photoluminescence spectra, a transformation of radiative recombination mechanism from free-exciton to donor-acceptor-pair transition was observed. An enhancement of resonant Raman scattering processes as well as longitudinal optical (LO) phonon overtones up to the sixth order were observed in the Raman spectra. Also, the nature of the 1LO phonon underwent a transformation from a pure A₁(LO) mode to a quasimode with mixed A₁ and E₁ symmetry. The underlying mechanisms accounting for the influences of N doping on the optical properties of ZnO were related to the incorporation of extrinsic defects in the crystal lattice.     

Quantum transport in GaInAs-AlInAs heterojunctions,and the influence of intersubband scattering

Shubnikov-de Haas and cyclotron resonance results are presented for GaInAs-AlInAs heterojunctions in both perpendicular and tilted magnetic fields. Two electric subbands are occupied in zero magnetic field. Magnetic depopulation of the higher (E₁) subband is observed in both perpendicular and tilted orientations. This enables a demonstration of the importance of intersubband scattering in both resistivity and cyclotron resonance. A shift of the relative positions of the E_o and E₁ subbands by parallel magnetic fields is measured to be 0.26 meV/T².     

Electric field modulated Raman scattering in CdS

We have observed electric field modulated Raman scattering by A₁ LO phonons in CdS. The field induced scattering is observed with a geometry in which Raman scattering by A₁ LO phonons is normally allowed. The interference of the field induced and allowed terms in the transition susceptibility leads to a modulated Raman scattering intensity proportional to the applied field. This is contrasted with data previously reported on field induced Raman scattering by E₁ LO phonons in a configuration in which the Raman scattering is normally forbidden and in which there is no interference between linear wavevector dependent and field induced terms in the transition susceptibility. Electric field effects on Raman scattering by TO phonons and by 2 LO phonons is also discussed.     

Exciton-phonon interaction in mixed silver halides: Resonant Raman scattering vs photoluminescence

An investigation of resonant Raman scattering in mixed crystals of AgBr:Cl at 1.8 K shows that the zero-phonon and LO phonon-assisted exciton luminescence excited in the free indirect exciton absorption, exhibits an anomalous dependence on the exciton photon energy E_L. Close to the exciton gap, the bands show a Raman-like behaviour with their peaks at constant energetic distance from E_L. As E_L is tuned further into the absorption, the bands gradually develop into normal photoluminescence. The effect is explained by taking into account exciton relaxation via scattering by long-wavelength acoustic phonons, a process which is strongly energy dependent. In addition, resonant Raman scattering observed for excitation in the zero-phonon absorption suggests study for the first time of the mode behaviour of certain off-zone center phonons in this system.     

Antiresonance of Raman Scattering in CdSxSe1-x Mixed Crystals

Abstract

Resonant enhancement of the Raman scattering cross section in II - IV semiconductors has recently received much attention both theoretically and experimentally. All existing theories anticipate a monotonic increase in the scattering intensities when the scattering radiation energy approaches the direct-energy gap. Contrary to them in an early Raman study of CdS¹ a cancellation of scattering efficiencies for the two TO modes prior to the onset of the resonance was pointed out. In a latter work on pure CdS Damen et al.² found even a more pronounced “antiresonance” behavior of the nonpolar E₂ phonon at 41 cm^?1. Thus, this striking feature seems to be rather common for the Raman active modes in CdS for which no electrooptic contribution to the scattering amplitude exists. The experimental data were qualitatively explained by assuming a destructive addition between nonresonant and the weaker resonant terms in LoudoN′s expression for the first-order Raman tensor³. Consequently the cancellation energy difference /E_G - hw_L/ depends on the ratio of the resonant term to the nonresonant terms.     

Stimulated polariton-polariton scattering and dynamic Bose-Einstein condensation of polaritons in GaAs microcavities under excitation near the exciton resonance

The dynamics of formation of the macroscopically occupied polariton mode at the bottom of the polariton band E _LP(k = 0) and its spin polarization under the quasiresonant pulse excitation of excitons (E = E _X ) with large values of quasi-momentum have been studied in planar GaAs microcavities. It has been found that the growth in the depth E _X − E _LP(k = 0) of the polariton band leads to the change in the formation mechanism for the k = 0 condensate state from the direct parametric decay of the photoexcited mode (due to the polariton-polariton interaction) to the dynamic condensation of polaritons, which results from the multiple scattering of polaritons by both phonons and polaritons. At the same time, in microcavities with E _X − E _LP(k = 0) > 3.5 meV, the direct decay of the photoexcited mode does not disappear, becoming an efficient mechanism for the filling of the states located at the k-space ring, corresponding to the energies E _LP(k) ≈ E _X − 2.6 meV.     

Raman E 1, E 1+Δ1 resonance in unstrained germanium quantum dots

Raman scattering by optical phonons in unstrained Ge quantum dots obtained in GaAs/ZnSe/Ge/ZnSe structures was studied using molecular beam epitaxy. A shift in the E ₁, E ₁+Δ1 resonance energy due to the quantization of the spectrum of electron and hole states in quantum dots was observed. The properties observed were explained with the use of a simplest model of localization with allowance for the spectrum of Ge electron states.     

Resonant Raman scattering in germanium and zincblende-type semiconductors temperature dependence

We have measured the resonance in the Raman scattering near the E₁ gaps of InAs and of a Ge_0.77 Si_0.23 alloy at 77, 300 and 594°K. In contrast to the E₁ gap determined in absorption and transmission measurements, the coresponding peak in the spectral dependence of the scattering cross section shifts very little with temperature; it occurs at all temperatures very near the energy of the absorption peak measured at low temperatures (∼ 77°K).     

Line shape and excitation strength of the first excited state in9Be

The line shape and the excitation strength of the very weak first excited J ^π =1/2⁺ state at E_x=1.684 MeV in Zeitschrift für Physik Zeitschrift für Physik⁹Be has been investigated with high-resolution inelastic electron scattering at E₀=45 and 49 MeV and scattering angles θ=105°, 117°, 129° and 165°, and with high-resolution inelastic proton scattering at E₀=13MeV and θ=15° and 18°. Due to lying just above the neutron threshold the level has a strongly asymmetric line shape which in both experiments can be described consistently with a Breit-Wigner expression modified on the low energy side by the threshold behaviour of the cross section. The resonance energy is E_R=1.684 ± 0.007 MeV and the width T=217± 10 keV in thec.m. system. A single particle potential model calculation reproduces the line shape and the resonance parameters fairly well. In addition, the inelastic electron scattering form factor has been measured. In the range of momentum transfersq =0.24-0.46 fm^?1 it is dominated by a 0p_3/2→ 1s_1/2 particle-hole transition. The transition is mainly longitudinal and of isoscalar nature with a strength of B (E1)↑ =0.027 + 0.002 e² fm², but a small M2 contribution ofB(M2)↑=8.8 ±1.5 μ _N ² fm² has also been detected.     

Single crystal polarized Raman spectra of the solid electrolyte Cu2HgI4; attempt frequencies for ion motion in Ag2HgI4

The polarized Raman scattering from small single crystals of Cu₂HgI₄ provided assignments for the more prominent Raman features to specific irreducible representations. The E symmetry assignment, mass dependence, and pressure dependence of the 36 cm^?1 band in Cu₂HgI₄ and 24 cm^?1 band in Ag₂HgI₄ indicate that these features approximate the attempt frequency for ion hopping. The unusually high pre-exponential factor in the Arrhenius expression for ion hopping is discussed in light of the observed attempt frequency; we conclude that despite the high activation energy the conduction mechanism is similar to other heavy-metal solid electrolytes.     

Probe into the reflection from GaP nanoparticles via different solutions of radiative transfer equation

The reflection and absorption spectra of gallium phosphide (GaP) nanoparticles were measured. The radiative transfer equation (RTE) for the medium with scattering and absorption is solved by three different solutions. The ratio of the absorption and scattering coefficients (E _a/E _s) of the GaP nanoparticles layer is calculated from the reflection spectrum via the three solutions, respectively, and the result derived with the three-flux model is closest to the exact solution given by Giovanelli. The E _a/E _s curves all exhibit the energy band gaps of GaP nanoparticles, which are consistent with the absorption spectrum measurement. The shape of the reflection spectrum is mainly determined by the absorption, and the scattering only influences its intensity. The energy band structure of the powder sample plays an important role in the reflection phenomenon, and the reflectance data can be used for quantitative analyses.