High-pressure X-ray diffraction study of 1T-TaS2

We present a room temperature high-pressure X-ray diffraction study of the layered compound 1T-TaS₂ up to 20 GPa. This material is known to exhibit a variety of structural phase transitions that are ascribed to the stabilization of charge density wave states. It has been recently shown that at pressures larger than 3 GPa and up to 25 GPa, 1T-TaS₂ becomes superconductor below about 5 K. It was suggested that this superconductivity coexists with different CDW states, an hypothesis that can be tested by X-ray diffraction. Our first results at room temperature show that at around 1.9 GPa, the nearly-commensurate (NCCDW) phase transforms into a phase similar to the high temperature incommensurate phase (ICCDW). Above 9 GPa, we show the existence of another IC phase, still discernable up to 20 GPa despite the pressure-induced crystal damage above 13 GPa. These results are consistent with resistivity measurements, but call for a complete exploration of the P–T phase diagram of 1T-TaS₂.     

First observation of photoconductivity in the semiconducting phase of VO2

We report in this paper the first successful measurements of photoconductivity in the semiconducting phase of VO₂ single crystals. At low temperatures the frequency dependence of the photosensitivity (ps) exhibits an edge which gradually flattens at higher temperatures. The resulting mobility gap at 4.2 K amounts to 0.95 eV and thus differs from the optically determined band gap (0.65–0.75 eV).¹ These measurements, together with other known data suggest a “quasi-amorphous” electronic behavior of crystalline and semiconducting VO₂.     

Photo- and thermostimulated processes in α-Al2O3

We reported on the recombination processes determined by the release of electrons from defects connected with the dosimetric 430 K thermostimulated luminescence (TSL) peak as well as with the 260 K TSL peak. These TSL peaks appear in thermochemically reduced α-Al₂O₃ crystals containing hydrogen and emission of these TSL peaks corresponds to luminescence of the F-center. The X-ray exposure or UV excitation in the absorption band of F-centers at 6.0 eV of reduced α-Al₂O₃ crystals doped with acceptor impurities results in the appearance of a broad anisotropic complex absorption band in the spectral region 2.5–3.5 eV and in the appearance of a predominant TSL peak at 430 K. Above 430 K the above-mentioned broad absorption band disappears. Optical bleaching of the 2.5–3.5 eV band is accompanied by the disappearance of the 430 K TSL peak and results in F-center emission. The X-ray or UV excitation of reduced α-Al₂O₃ crystals with donor-type impurities results in the appearance of an anisotropic absorption band at 4.2 eV and the appearance of a dominant TSL peak at 260 K. Above 260 K the 4.2 eV absorption disappears and photostimulated luminescence (PSL) of the F-center recombination luminescence in the 4.2 eV region is no longer observed. Optical bleaching of the 4.2 eV absorption band is accompanied by the disappearance of the 260 K TSL peak. The successful use of reduced α-Al₂O₃ in dosimetry needs the optimization of the concentration of all components (acceptors, hydrogen, intrinsic defects) involved in the thermo- and photostimulated processes.     

Elastic anomalies in 1T-TaS2

The temperature dependence of the resonant period in 1T-TaS₂ was measured using the resonant flexural vibration technique. From the close study on the effect of thermal cycles, it is suggested that the anomalous regions observed both on cooling down (183–193 K) and on warming up (218–282 K) were associated with the nearly commensurate-commensurate charge density waves (CDW's) phase transition.     

Ferroelectric phase transition in Ga2Te3 single crystals

Measurements of the electrical conductivity and Hall effect were carried out in a wide temperature range (200-500 K) for Ga₂Te₃ crystals. The crystals were grown in single crystalline form by making a modification of the travelling heater method technique. The measurements revealed unusual observations in the electric conductivity and Hall mobility indicating the presence of some type of phase transitions at about 430 K. So, ferroelectric behavior was examined for confirming the presence of second-order (ferroelectric) phase transition. An energy gap of 1.21 eV and depth of the impurity center of 0.11 eV were found.     

Thermal evidences for successive CDW phase transitions in 1T-TaS2

The heat capacity of 1T-TaS₂ has been measured over the temperature range including the successive phase transitions (140 K–370 K) by an adiabatic calorimeter. There are three transitions in the measured temperature range, two first-order transitions (at about 226 K (T₁) and about 353.5 K (T₃)) and one small anomaly at about 283 K (T₂) with a broad peak. The transition enthalpies are as follows; ΔH₁=52±5 cal·mol^-1, ΔH₂=7.5±2 cal· mol^-1 and ΔH₃=122±8cal·mol^-1.     

Effects of Hf and W doping on the commensurate charge density waves in 1T-TaS2

The electrical resistivities of Hf-doped and W-doped 1T-TaS₂ have been measured to investigate the influence of varying the Fermi level on the formation of commensurate charge density waves. It was found that W-doping is far more effective in breaking the C-CDW phase than Hf-doping. Such results are explained by the energy consideration of the system with the Hubbard gap which is produced by the Mott-localization.     

Optical band-gap of Zn3As2

Absorption measurements of single Zn₃As₂ crystals were made at temperatures 5, 80 and 300 K. Free-carrier absorption is interpreted in the simple classical model. Interband absorption shows contributions from Urbach-like excitations. The direct optical gap has been estimated as 0.99 eV at 300 K, 1.09 eV at 80 K and 1.11 eV at 5 K. The linear dependence of band-gap on temperature was found in the range 80–300 K with dE_g/dT = ? 4.55 × 10^?4eVK^?1.     

Structural,electronic and optical properties of Ca3Bi2: First-principles investigation

In this work by applying first principles calculations structural, electronic and optical properties of Ca₃Bi₂ compound in hexagonal and cubic phases are studied within the framework of the density functional theory using the full potential linearized augmented plane wave (FP-LAPW) approach. According to our study band gap for Ca₃Bi₂ in hexagonal phase are 0.47, 0.96 and 1?eV within the PBE-GGA, EV-GGA and mBJ-GGA, respectively. The corresponding values for cubic phase are 1.24, 2.08 and 2.14?eV, respectively. The effects of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths and anti-symmetry gap are investigated. It is found that the hydrostatic pressure increases the band widths of all bands below the Fermi energy while it decreases the band gap and the anti-symmetry gap. In our calculations, the dielectric tensor is derived within the random phase approximation (RPA). The first absorption peak in imaginary part of dielectric function for both phases is located in the energy range 2.0–2.5?eV which are beneficial to practical applications in optoelectronic devices in the visible spectral range. For instance, hexagonal phase of Ca₃Bi₂ with a band gap around 1?eV can be applied for photovoltaic application and cubic phase with a band gap of 2?eV can be used for water splitting application. Moreover, we found the optical spectra of hexagonal phase are anisotropic along E||x and E||z.     

Preparation and properties of a new polytype of tantalum disulfide (4Hb-TaS2)

A new polymorph of the layered compound tantalum disulfide, 4Hb-TaS₂, has been prepared in single crystal form. Measurements of magnetic susceptibility, electrical resistivity, and differential heat capacity show two first order transitions at 20 and 315°K. The 315°K transition involves only a small volume and enthalpy change, as in the previously observed transitions of another polymorph, 1T-TaS₂. The resistivity measurements show metallic like conductivity, as in 2H-TaS₂, when the current is parallel to the layers, but semiconducting like conductivity, as in 1T-TaS₂, when perpendicular to the layers. The properties of 4Hb-TaS₂ are moderately well described as a ‘mix’ of those of 1T-TaS₂ and 2H-TaS₂.     

Electron energy loss spectra and X-ray photoelectron spectra of Ca2V2O7

We have measured the electron energy loss spectra of Ca₂V₂O₇ in the reflexion mode, at incident energies between 200 and 2400 eV, and the X-ray photoelectron spectra excited by Al K α radiation. The abundant loss structures observed can be correlated with the possible interband transitions, collective oscillations, and excitation of O2s and V3p electrons within the V₂O₇^4- ion. The gap width and molecular orbital (MO) spread (or splitting) is about l eV larger in the V₂O₇^4- ion than in its component VO₄^3- ion. Excitation of O2s states, which may occur together with some MO over-gap transitions, displaces the collective oscillations about 7 eV towards lower energies. Deeper V3p electrons are excited with a maximum energy loss some 7 eV above their binding energy. Cross transitions from Ca3p levels into some empty states of the V₂O₇^4- ion, or direct transitions to available states of the Ca²⁺ ion could not be unambiguously identified. The energy dependence of the excitation cross section and of the electron penetration depth results in a significant variation of the relative intensity of various losses over the investigated energy range.     

Nonlinear conduction in two-dimensional CDW system: 1T-TaS2

Non-linear electrical conductivity is observed in 1T-TaS₂ in the lowest-temperature phase (the commensurate charge density wave state). The collective excitations are suggested to contribute to the electronic conduction as in the case of the linear chain metals TTF-TCNQ and NbSe₃.     

Refractive indices of CuInSe2, CuInSe2 and CuGaTe2

Refractive index dispersion in the photon energy range from 0.5 eV to the fundamental gap energy is determined for CuInSe₂, CuInTe₂ and CuGaTe₂ by measuring and analysing optical transmission spectra of thin films. Control measurements on GaAs thin films demonstrate the reliability of the method.     

SUPERCONDUCTING PROPERTIES AND STRUCTURAL PERFECTION OF EPITAXIAL YBa2Cu3O7-x THIN FILMS

The photoconductivity spectra of semimagnetic semiconductor Cd_0.7Mn_0.3Se have been measured at 50-300 K and in the wavelength range of 5500? to 8000?. It is found that the energy gap of Cd_0.7Mn_0.3Se changes with the temperature linearly, and the temperature coefficient (dE_g/dT) is about -7×10^-4 eV/K. A photoconductivity peak which is related to Mn²⁺ is also found. This peak is located around 1.85 eV, nearly unshifted with variation of the temperature. The possible transition mechanisms in Cd_1-xMn_xSe have been discussed in the light of group theory and crystal field theory, and the results are in good agreement with experiments.     

Resonant photoemission and Ta 5p core reflectance spectra of 1T- and 2H-TaSe2

Reflectance spectra of 2H- and 1T-TaSe₂ have been measured at room temperature in the region between 20 and 60 eV. The multiplet structures in the Ta 5p core excitation region are analyzed on the localized excitation model. The ultraviolet photoemission spectra have revealed a resonant enhancement of the Ta 5d and Se 4p valence bands for the excitation of the Ta 5p core states. The difference of the multiplet structures as well as of the resonant behavior between 1T- and 2H-polytypes has elucidated the hybridization of the Se 4p states with the Ta 5d states in the valence bands of TaSe₂.     

Dielectric relaxation in complex perovskite oxide BaCo1/2W1/2O3

Polycrystalline BaCo_1/2W_1/2O₃ (BCW) is prepared by the solid-state reaction technique. The X-ray diffraction study of the compound at room temperature reveals the monoclinic phase. The field dependence of the dielectric constant and the conductivity are measured in the frequency range from 50 Hz to1 MHz and in the temperature range from 300 to 413 K. An analysis of the real and imaginary parts of the dielectric permittivity with frequency is performed. The frequency-dependent maxima in the imaginary impedance are found to obey an Arrhenius law with an activation energy=0.86 eV. The frequency-dependent electrical data are also analysed in the framework of the conductivity and modulus formalisms.     

Photoluminescence investigations on the nanoscale phase transition in Pb(Mg1/3Nb2/3)O3

The temperature dependence of the photoluminescence spectra of the relaxor ferroelectric Pb(Mg_1/3Nb_2/3)O₃ has been reported. The temperature behaviours of the 1.57, 1.67 and 1.73 eV bands indicate a phase transition at 110 K. This is attributed to a structural phase transition in the charged nanoshell. Analysis of the temperature dependence of 1.67 eV band intensity with a thermal quenching model indicated the existence of a phonon mode at 1153 cm⁻¹. This mode is identified in the Raman spectra measurement. The intensity of the 1.73 eV band showing an anomalous behaviour at 210 K is attributed to a transition from a crystalline phase to an amorphous phase in the charged nanoshell.     

Giant dielectric relaxation in SrTiO3-SrMg1/3Nb2/3O3 and SrTiO3-SrSc1/2Ta1/2O3 solid solutions

Ceramic samples of (1−x)SrTiO₃-xSrMg_1/3Nb_2/3O₃ and (1−x)SrTiO₃-xSrSc_1/2Ta_1/2O₃ were prepared, and their dielectric properties were studied at x=0.005–0.15 and 0.01–0.1, respectively, at frequencies 10 Hz–1 MHz and at temperatures 4.2–350 K. A giant dielectric relaxation was observed in the temperature range 150–300 K, and not so strong but well-developed relaxation was found in the temperature range 20–90 K. The activation energy U and the relaxation time τ₀ were determined to be 0.21–0.3 eV and from 10⁻¹¹ to 10⁻¹² s for the high-temperature relaxation and 0.01–0.02 eV and 10⁻⁸–10⁻¹⁰ s for the low-temperature relaxation, respectively. The additional local charge compensation of the heterovalent impurities Mg²⁺ and Nb⁵⁺ (or Sc³⁺ and Ta⁵⁺) by free charge carriers or the host ion vacancies is suggested to be the underlying physical mechanism of the relaxation phenomena. On the basis of this mechanism, the Maxwell-Wagner model and the model of reorienting dipole centers Mg²⁺ (or Sc³⁺) associated with the oxygen vacancy are proposed to explain the high-temperature relaxation with some arguments in favor of the latter model. The polaron-like model with the Nb⁵⁺-Ti³⁺ center is suggested as the origin of the low-temperature relaxation. The reasons for the absence of ferroelectric phase transitions in the solid solutions under study are also discussed. From Fizika Tverdogo Tela, Vol. 44, No. 11, 2002, pp. 1948–1957. Original English Text Copyright ? 2002 by Lemanov, Sotnikov, Smirnova, Weihnacht. This article was submitted by the authors in English.     

Optical absorption due to transitions between bands and local levels in CdCr2Se4

The theory of optical absorption due to transitions between a valence band and a hydrogen-like local level associated with a conduction band is modified to permit an arbitrary power-law dependence of energy on the magnitude of the wave-vector of carriers in the valence band. The observed absorption for photon energies below 1.6 eV in the ferromagnetic semiconductor CdCr₂Se₄ is discussed in terms of a combination of two types of terms. The first type of absorption is due to transitions to a local level from a band with two branches, in each of which there is an energy region with a width of 0.28 eV or more beginning 0.10–0.16 eV from the band edge, in which the energy measured from some origin near but not necessarily equal to the band-edge is approximately proportional to (wave-vector)^{($\text{1}\text{3}$)}. The second type of absorption has a dependence on photon energy ?ω of the form (?ω ? E₃)², where E₃ is a threshold energy probably connected with indirect transitions between bands as suggested by Sakai, Sugano and Okabe. After constraints on parameters appearing in the theory are imposed by use of results of these authors and of Shepherd, it is found that curves of Harbeke and Lehmann on optical absorption in CdCr₂Se₄ at 4.2, 78, 130 and 298 K in the photon-energy range 1.14–1.42 eV can be fitted to a mean accuracy of 3%, using an average of 3.75 adjustable parameters for each curve. The strength of the indirect band-to-band absorption does not have the temperature dependence expected for phonon-assisted indirect band-to-band transitions, but can be described by a term independent of temperature plus another term proportional to the square of the deviation of the magnetization from saturation. The fitting of the absorption curves requires that the ratio of the widths of the two branches of the bands varies from about 1.6 at low temperatures to 1.35 at 298 K and that the total width of the bands involved is less than 1 eV.