共查询到17条相似文献,搜索用时 62 毫秒
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对近几年来高迁移率有机薄膜晶体管材料研究的主要发展作了简要介绍和评述,讨论了高迁移率有机半导体材料存在的问题和发展方向. 相似文献
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采用良溶剂与不良溶剂混合的方法,提高了聚3-己基噻吩(P3HT)薄膜晶体管的场效应迁移率.UV-Vis吸收光谱、掠角X-射线衍射和原子力显微镜研究表明,通过向P3HT的氯仿溶液中加入适量二氧六环可以增强溶液分子间π-π相互作用,在溶液中形成分子链有序排列的P3HT聚集体,从而提高了旋涂得到的聚合物薄膜结晶度,并控制分子沿着有利于电荷传输方向排列.薄膜的场效应迁移率在二氧六环的含量为10vol%时达到最高值1.7×10-2 cm2 V-1 s-1,与纯氯仿溶液制得的P3HT薄膜的迁移率相比提高了50多倍. 相似文献
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近年来,随着有机半导体材料的设计、合成以及新技术的开发利用,溶液法制备的有机薄膜晶体管(Organic thin-film transistors,OTFTs)取得了快速发展。本文简单介绍了OTFTs的结构和工作原理,总结了近几年来可溶液法加工的有机半导体材料、介电材料和电极材料的研究进展,讨论了OTFTs的溶液法制备技术,最后对OTFTs发展面临的问题和发展前景进行了探讨。 相似文献
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在金电极和p-型并五苯有源层之间插入n-型有机半导体层显著提高了并五苯薄膜场效应晶体管的性能。在插入2 nm厚的N,N-bis(2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctyl) -1,4,5,8-naphthalenetetracarboxylic diimide(NTCDI-C8F)和N,N’-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8)层后,器件的阈值电压由-19.4 V显著降低到-1.8和-8.7 V、迁移率提高了约2倍、电流开关比保持在105~106。这为通过简单地在电极和有机半导体有源层之间引入其他有机半导体薄层的方法来构建具有低阈值电压和高迁移率特征的有机薄膜场效应晶体管器件提供思路。 相似文献
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在金电极和p-型并五苯有源层之间插入n-型有机半导体层显著提高了并五苯薄膜场效应晶体管的性能。在插入2nm厚的N,N-bis(2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctyl)-1,4,5,8-naphthalenetetracarboxylicdiimide(NTCDI-C8F)和N,N′-dioctyl-3,4,9,10-perylenedicarboximide(PTCDI-C8)层后,器件的阈值电压由-19.4V显著降低到-1.8和-8.7V、迁移率提高了约2倍、电流开关比保持在105~106。这为通过简单地在电极和有机半导体有源层之间引入其他有机半导体薄层的方法来构建具有低阈值电压和高迁移率特征的有机薄膜场效应晶体管器件提供思路。 相似文献
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近年来,有机场效应晶体管因其低成本、可低温制备、与柔性衬底兼容,以及能够大面积制备等优势而备受关注,其性能也在不断提高。其中并苯类化合物作为一类非常重要的有机半导体材料得到了广泛的关注和研究。渡越时间法测试表明蒽的迁移率能够达到3.0 cm2V-1s-1,应该具有较好的场效应晶体管应用。人们对蒽及其衍生物进行了一系列的研究,取得了很大的成功。这里,我们对蒽及其衍生物在有机场效应晶体管中的应用做一个较为全面的综述,期望为国内外同行提供一定的参考。 相似文献
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Komal Kurlekar Anshika Anjali Dr. Predhanekar Mohamed Imran Prof. Samuthira Nagarajan 《Chemphyschem》2023,24(2):e202200375
A series of new zinc porphyrins were synthesized, and their charge transport property was tuned by introducing various groups. Triarylamine was introduced to the porphyrin moiety at the meso-position as an electron donor, enhancing the charge carrier mobility. All the synthesized zinc porphyrins are thermally stable with a decomposition temperature over 178 °C. High frontier molecular orbitals levels of these compounds make them stable donor materials. SEM analysis of zinc porphyrins fabricated by spin-coating resulted in diversely self-assembled films. Field-effect transistors were fabricated using bottom-gate/top-contact architecture (BGTC) by solution-processable technique. The higher charge carrier mobility of 5.17 cm2/Vs with on/off of 106 was obtained for trifluoromethyl substituted compound due to better molecular packing. In addition, GIXRD analysis revealed zinc porphyrins films crystalline nature, which supports its better charge carrier mobility. The present investigation has validated that zinc porphyrin building blocks are an attractive candidate for p-channel OFET devices. 相似文献
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本文简要地介绍了有机半导体中载流子迁移率的几种模型,着重阐述了测量有机半导体中载流子迁移率的各种方法的测试原理。主要有如下几种:稳态(CW)直流电流-电压特性法(steady-state DC J-V),飞行时间法(time of flight, TOF),瞬态电致发光法(transient electroluminescence,transient EL),瞬态电致发光法的修正方法即双脉冲方波法和线性增压载流子瞬态法(carrier extraction by linearly increasing voltage,CELIV),暗注入空间电荷限制电流(dark injection space charge limited current, DI SCLC),场效应晶体管方法(field-effect transistor,FET),时间分辨微波传导技术(time-resolved microwave conductivity technique,TRMC),电压调制毫米波谱(voltage-modulated millimeter-wave spectroscopy,VMS)光诱导瞬态斯塔克谱方法(photoinduced transient Stark spectroscopy),阻抗(导纳)谱法(impedance(admittance)spectroscopy)。说明了各种实验方法的应用范围、使用条件和优缺点。 相似文献
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采用光吸收互补的聚(3-己基噻吩)(P3HT)和引达省并二噻吩-苯并噻二唑共聚物(PIDT-BT), 通过溶液法制备了两者的本体复合异质结构有机半导体薄膜, 并研究了薄膜的表面结构和光电性质. 将PIDT-BT:P3HT复合薄膜作为一类新型光敏沟道层, 与聚电解质介电材料相结合, 制备了高性能柔性低电压光突触晶体管. 考察了不同光刺激条件对光突触晶体管性能的影响及半导体机制, 发现PIDT-BT:P3HT器件具有明显光突触特性, 并且相较于单纯PIDT-BT或P3HT器件具有更高响应的兴奋性突触后电流. 基于PIDT-BT:P3HT薄膜的光突触器件, 在绿红双色光刺激下的响应大于两种单色光分别刺激的响应之和, 表明附加光刺激可调控器件的记忆效率. 该研究为发展高性能光响应半导体薄膜及柔性低功耗光突触器件提供了新策略. 相似文献
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《化学:亚洲杂志》2018,13(18):2587-2600
The fusion of heteroaromatic rings into ladder‐type heteroarenes can stabilize frontier molecular orbitals and lead to improved physicochemical properties that are beneficial for applications in various optoelectronic devices. Thus, ladder‐type heteroarenes, which feature highly planar backbones and well‐delocalized π conjugation, have recently emerged as a promising type of organic semiconductor with excellent device performance in organic photovoltaics (OPVs) and organic field‐effect transistors (OFETs). In this Focus Review, we summarize the recent advances in ladder‐type heteroarene‐based organic semiconductors, such as hole‐ and electron‐transporting molecular semiconductors, and fully ladder‐type conjugated polymers towards their applications in OPVs and OFETs. The recent use of ladder‐type small‐molecule acceptor materials has strikingly boosted the power conversion efficiency of fullerene‐free solar cells, and selected examples of the latest developments in ladder‐type fused‐ring electron acceptor materials are also elaborated. 相似文献
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Over the past decade, isoindigo has become a widely used electron‐deficient subunit in donor‐acceptor organic semiconductors, and these isoindigo‐based materials have been widely used in both organic photovoltaic (OPV) devices and organic field effect transistors (OFETs). Shortly after the development of isoindigo‐based semiconductors, researchers began to modify the isoindigo structure in order to change the optoelectronic properties of the resulting materials. This led to the development of many new isoindigo‐inspired compounds; since 2012, the Kelly Research Group has synthesized a number of these isoindigo analogues and produced a variety of new donor‐acceptor semiconductors. In this Personal Account, recent progress in the field is reviewed. We describe how the field has evolved from relatively simple donor‐acceptor small molecules to structurally complex, highly planarized polymer systems. The relevance of these materials in OPV and OFET applications is highlighted, with particular emphasis on structure‐property relationships. 相似文献