无箔二极管电磁PIC模拟空间电荷限制发射模型比较

 为了在无箔二极管电磁PIC模拟中采用与电磁场自洽的空间电荷限制发射模型，对查尔特定律模型、高斯定律模型和一维二极管模型进行了理论分析和实例模拟比较。模拟结果表明，三种模型都能与电磁场自洽并反映外加磁场对发射电流的影响，但高斯定律模型受网格剖分粗细程度的影响较大且容易产生振荡，一维二极管模型在网格参数合理的情况下结果与查尔特定律模型基本接近，但需要求解超越方程，花费时间多。通过对模拟结果进行分析和比较，认为外加磁场对电子发射模型本身的影响很小，在电磁PIC数值模拟中可以不考虑，因此，查尔特定律模型更适合用于无箔二极管的电磁PIC模拟。     

Resonance amplifier model describing diode lasers coupled to short external resonators

A model of a regenerative resonance amplifier has been used to describe Fabry-Perot GaAs diode lasers coupled to short external resonators. The optical gain and the equivalent input of the resonance amplifier are controlled by means of appropriate rate equations. Homogeneous line-broadening and proportionality between gain and electron density have been assumed in this approach. The model was applied to a diode laser coupled to an external plane mirror placed at a variable distance from one diode mirror. A numerical evaluation of the coupling coefficient between laser and external cavity enables to predict the measured power output and mode selective properties of the coupled system. A similar analysis was done for diode lasers coupled to external hemispherical resonators. The model calculation confirms the previously demonstrated mode selective properties of the hemispherical configuration which permitted stable single mode operation.     

基于Ritz-Galerkin方法的太赫兹二极管检波器非线性分析

肖特基二极管检波器是太赫兹ASK/OOK通信系统的关键器件之一, 为了更好地分析肖特基二极管检波器的非线性特性, 从检波器的电路模型出发, 基于Ritz-Galerkin方法, 建立了检波器非线性特性的理论分析模型。并利用模型对检波器输出信号强度和灵敏度作了理论预测, 表明该理论模型能够精确预测检波器的非线性特性。最后利用该理论模型研究了输入信号强度、负载阻抗和外界温度对0.34 THz肖特基二极管检波器非线性特性的影响。结果表明随着功率的增加, 检波器由平方率区渐变至线性区只在特定条件下才成立, 在实际条件下很容易出现高阶效应。     

Thermal lensing of diode side-pumped solid-state lasers

The pump energy distribution in a diode side-pumped solid-state laser, is an overlap of propagating Gaussian beams. A simple model has been developed to calculate the thermal focal length of a diode side-pumped solid-state laser, which is based on a thermal model with a Gaussian heat density in any cross section of a laser rod. It can be seen that as the waists of pump beams increase, the energy distribution tends to be uniform and the thermal focal length tends to be long, which means a smaller thermal focusing.     

Measurement and study of the embedding impedance presented by the whisker antenna of a schottky diode corner cube mixer

A 250× scale model of a Schottky diode corner cube mixer designed for operation in the terahertz region has been built and tested. It has been successfully used to measure the embedding impedance presented to the diode at the whisker tip and also determine the impedance of the whisker antenna itself. The results have been input into a computer analysis to determine as to how the performance may be improved. With regards to improving the physical ruggedness of such mixers, a simple equivalent whisker structure has been determined and a new technique that may be used to fabricate a space qualifiable corner cube mixer intended for terahertz operation is disclosed.     

Non-contact detection of explosives by means of a tunable diode laser spectroscopy

As explosives are unstable, their decay products may be targeted for detection by means of tunable diode laser spectroscopy (TDLS). A model in which an explosive is placed inside an envelope with a hole in it has been studied. It has been shown that outside the envelope the concentration of the decay products may exceed that of the vapors of an explosive, by several orders. Decay products of explosives have been investigated using Fourier-transform spectrometry and TDLS. The following decay products have been identified: NO, N₂O, CO, NH₃. Analysis of the temperature dependencies of their occurrence rates has allowed estimation of the activation energies, which appear to be close to 1 eV. An experimental model of the diode laser spectrometer designed for noncontact detection of explosives has been developed. The possibility of such detection has been demonstrated experimentally. PACS 42.62.Fi; 07.07.Df; 42.55.Px     

Rod-pinch 二极管理论及数值模拟

 介绍了Rod-pinch二极管的基本结构和工作原理，采用Laminar模型分析了Rod-pinch二极管中的粒子运动过程及其阻抗特性。考虑背景空间离子电荷的影响，用1维Laminar方程分析Rod-pinch二极管中电子的自箍缩过程，并且利用Magic程序对其中的粒子运动进行数值模拟，求解二极管中的电压和电流，最终得出二极管的阻抗特性，在较低电压下，负极性RPD的性能明显不如正极性RPD。根据临界电流经验公式，初步验证Laminar理论模型的可行性。     

Theoretical and experimental investigations of quasi-continuous wave diode array side-pumped Yb＇YAG slab laser

An analytical model of quasi-continuous wave (quasi-CW) diode array side-pumped slab laser for Yb:YAG oscillator in long-pulse free-running has been developed based on the CW model. In this model we first introduce a new parameter, pump pulse width, and make the model available for use in the quasi-CW model. We also give an analytical equation of laser delay time to calculate the laser pulse width. A detailed model is also presented for a new structure laser design, taking account of the geometry of Yb:YAG slab. A quasi-CW diode array side-pumped Yb:YAG slab laser is investigated theoretically and experimentally. Experiments yield a quasi-CW output energy up to 20.36 mJ with the laser pulse width of 654.55 μs at 1049 nm when the diode arrays operate at 25 Hz and 1 ms pulse width. The crystal dimensions are 3 mm×8 mm×1 mm and the doping density is 10 at.%. The experimental results are in good agreement with the predictions of the theoretical model.     

An organic programmable diode with pentacene, zinc oxide nanoparticles and polymethylsilsesquioxane

In this paper, we proposed an organic programmable diode as a memory device. This device consists of layers of pentacene and zinc oxide nanoparticles embedded in polymethylsilsesquioxane. The device exhibits a change in current flow of an order up to 10⁵ and is comparable or better to many reported organic diode memory devices. A two-barrier model has been used to explain the memory effect of the organic diode. The device can be written and erased multiple times similar to a flash memory.     

真空二极管辐射微波的机理分析

在研究真空开关的过程中,发现真空二极管能辐射出宽带微波.这种器件只由带触发装置的阴极和平板阳极组成,不存在金属波纹慢波结构,所以真空二极管的辐射机理与等离子体填充微波器件不同,不能直接套用等离子体填充微波器件的相关理论.本文描述了真空二极管产生辐射的物理过程,建立了真空二极管辐射的数学模型,通过求解波动方程得到产生辐射的色散关系,并绘制出了色散曲线.将理论分析得到的色散曲线与已经测得的微波辐射进行比较,两者能很好地符合.理论分析和实验结果表明,电子束和磁化等离子体的相互作用是真空二极管产生微波辐射的原因.     

Efficient quasi-three-level Nd:YAG laser at 946 nm pumped by a tunable external cavity tapered diode laser

Using a tunable external cavity tapered diode laser (ECDL) pumped quasi-three-level Nd:YAG laser, a fivefold reduction in threshold and twofold increase in slope efficiency is demonstrated when compared to a traditional broad area diode laser pump source. A TEM₀₀ power of 800 mW with 65% slope efficiency is obtained, the highest reported TEM₀₀ power from any 946 nm Nd:YAG laser pumped by a single emitter diode laser pump source. A quantum efficiency of 0.85 has been estimated from experimental data using a simple quasi-three-level model. The reported value is in good agreement with published values, suggesting that the model is adequate. Improvement of the 946 nm laser due to the ECDL's narrow spectrum proves to be less significant when compared to its spatial quality, inferring a broad spectrum tapered diode laser pump source may be most practical. Experimental confirmation of such setup is given.     

PIN限幅器PSpice模拟与实验研究

 从PIN二极管基区双极载流子扩散方程出发，通过拉普拉斯变换求解得到PIN二极管子电路模型，从而通过PSpice软件瞬态数值模拟得到了PIN限幅器的尖峰泄漏、平顶泄漏与脉冲功率、上升时间关系。对于I层厚度一定的限幅器，模拟与实验表明脉冲前沿越大，尖峰泄漏功率插入损耗越大，脉冲前沿过缓则可能没有尖峰泄漏现象；尖峰泄漏功率随着输入功率的增加而变大，但尖峰泄漏功率插损也随之增大；尖峰脉冲宽度与I层厚度、输入功率及脉冲前沿均有关系。限幅器尖峰泄漏与平顶泄漏模拟结果与实验数据基本一致。     

Relativistic electron beam generation in a plasma-filled diode withfoilless injection into a dense plasma

In the experiments an relativistic electron beam (REB)-plasma interaction, the foilless injection of REB from a magnetized diode is of special interest due to the low spread angle of the beam and high repetition rate of the shots. In the experiments presented, the problem of diode shortening in the presence of a dense plasma from the interaction chamber has been solved using a special drift pipe as an anode of the foilless diode. The electron beam (U_d~0.7 MeV, t _b~100-200 ns) produced by an axially symmetric magnetically insulated diode has been injected into a magnetized hydrogen plasma column with density ranging from 1·10¹⁵-3·10 ¹⁶ cm^-3. It has been found that the anode pipe substantially reduces the plasma flow into the diode gap, but does not stop it completely, thus the REB generation in a plasma-filled diode has taken place. In some regimes of the beam generation it becomes possible to increase significantly the injected current and total energy deposition of the beam in comparison with the case of a vacuum magnetized diode of the same geometry. The experiments have shown effective dense plasma heating under the foilless injection     

Simulation Investigation of Millimeter Wave Varactor-tuned Transmission Cavity-stabilized Oscillator

A new circuit configuration for millimeter wave varactor-tuned transmission cavity-stabilized oscillator has been proposed in this paper. Compared to conventional varactor-tuned reflection cavity-stabilized oscillator, in this configuration, a high quality factor transmission cavity directly coupled to varactor diode is employed to improve the performances of the oscillator. The operation frequency of this oscillator can be tuned by varying the resonant frequency of the transmission cavity through changing bias voltage of the varactor diode. An equivalent circuit model for the oscillator has been presented in order to theoretically investigate the performance characteristics of the oscillator. On the basis of this model, electrical tuning characteristics have been studied. Mode jumping phenomena during electrical tuning process have been analyzed for obtaining stable operations of the oscillator. The analytical formulae of quality factor and efficiency have been derived in terms of relevant circuit parameters. Particular emphasis has been paid on several circuit parameters which have a substantial impact on circuit performance. Some design considerations have been pointed out according to the simulation results, which are useful to the design and fabrication of this type of oscillators.     

小型超导电源系统退磁保护回路建模与仿真

计算了采用二极管等效电压源模型和等效电阻模型的退磁回路电流响应和二极管功耗,分析了两个模型的特点和差异,在此基础上,为了进一步提高精度,充分考虑了二极管的非线性特性,以实际二极管伏安特性进行曲线拟合建立函数关系式得到二极管非线性模型,代入回路方程并求解。综合对比各模型的仿真结果后,得出采用二极管非线性模型和等效电压源模型能更好地模拟退磁保护响应。     

Simple formulae giving the temperature profiles in the stripe-geometry laser diodes with oxide barriers

Simple, approximate formulae describing the temperature distribution in the stripe-geometry laser diode with oxide barriers has been derived in this work. A two-dimensional, heat-spreading model has been used in which the lateral heat spreading as well as the radiative transfer of spontaneous radiation has been taken into account. The resultant formulae have been obtained using the electrical analogue of the heat flow process.     

以BBOT为电子传输层的聚合物蓝色发光二极管

在前篇文章中[1]我们报导了以perylene掺杂的PVCz聚合物单层电致发光器件,得到蓝色发光,其亮度为59(cd/m2).在这篇文章中,我们以PVCz作为空穴传导层,BBOT为电子传导层制成了双层结构的发光二极管.亮度和效率都大大超过单层器件.     

Directly extracting both threshold voltage and series resistance from the conductance-voltage curve of an AlGaN/GaN Schottky diode

An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted from the conductance-voltage (G-V) curve and found to be in good agreement with the ones obtained by using the capacitance-voltage (C-V) curve integration and the plot of dV/d(ln I) versus current I. Thus, a method of directly and simultaneously extracting both the threshold voltage and the series resistance from the conductance-voltage curve for the AlGaN/GaN Schottky diode is developed.     

A comparison study of electroluminescence from Au/native oxide/p-Si and Au/porous Si diodes

Visible electroluminescence (EL) has been observed from a Au/native oxide/p-Si diode and has been studied in comparison with the EL from a Au/porous Si diode. Both diodes share similarities in current-voltage characteristics, EL spectra, and electrical input power dependence of integrated EL intensity. However, Au/porous Si exhibits quite strong photoluminescence (PL) while Au/native oxide/p-Si does not show any measurable PL. For the Au/native oxide/p-Si diode, when the native oxide layer was removed in 1% HF solution, no detectable EL has been observed. These experimental results indicate that the native oxide layer plays a key role in light emission from the Au/native oxide/p-Si diode, and show that the luminescence mechanism for Au/native oxide/p-Si diodes is similar to that for the Au/porous Si diode. This comparative study may aid in elucidation of the EL mechanism of porous silicon.