Very thin,highly‐conductive ZnO:Al front electrode on textured glass as substrate for thin‐film silicon solar cells

A very thin (250 nm), highly conductive (annealed), non‐texturized DC‐sputtered aluminum‐doped zinc oxide layer (ZnO:Al) deposited on a textured glass is used as substrate for thin‐film silicon solar cells. Compared to the classical approach, where wet‐chemically texturized ZnO:Al on planar glass is used, this approach allows a reduction in the as‐deposited ZnO:Al thickness of almost 70% while at the same time, thanks to the good light trapping capability of the glass texture the efficiency of the cells was maintained at the high level of 10.9%.

     

High‐performance a‐Si1–xOx:H/c‐Si heterojunction solar cells realized by the a‐Si:H/a‐Si1–xOx:H stack buffer layer

We used amorphous silicon oxide (a‐Si_1–xO_x:H) and microcrystalline silicon oxide (µc‐Si_1–xO_x:H) as buffer layer and p‐type emitter layer, respectively, in n‐type silicon hetero‐junction (SHJ) solar cells. We proposed to insert a thin (2 nm) intrinsic amorphous silicon (a‐Si:H) thin film between the thin (2.5 nm) a‐Si_1–xO_x:H buffer layer and the p‐layer to form a stack buffer layer of a‐Si:H/a‐Si_1–xO_x:H. As a result, a high open‐circuit voltage (V_OC) and a high fill factor (FF) were obtained at the same time. Finally, a high efficiency of 19.0% (J_SC = 33.46 mA/cm², V_OC = 738 mV, FF = 77.0%) was achieved on a 100 μm thick polished wafer using the stack buffer layer.

     

Role of a‐Si:H bulk in surface passivation of c‐Si wafers

The low thermal stability of hydrogenated amorphous silicon (a‐Si:H) thin films limits their widespread use for surface passivation of c‐Si wafers on the rear side of solar cells. We show that the thermal stability of a‐Si:H surface passivation is increased significantly by a hydrogen rich a‐Si:H bulk, which acts as a hydrogen reservoir for the a‐Si:H/c‐Si interface. Based on this mechanism, an excellent lifetime of 5.1 ms (at injection level of 10¹⁵ cm^–3) is achieved after annealing at 450 °C for 10 min. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Quantitative evaluation method for electroluminescence images of a‐Si:H thin‐film solar modules

This work presents a method for extracting the absolute local junction voltage of a‐Si:H thin‐film solar cells and modules from electroluminescence (EL) images. It is shown that the electroluminescent emission of a‐Si:H devices follows a diode law with a radiative ideality factor n_r larger than one. We introduce an evaluation method that allows us to determine the absolute local junction voltage in cases of n_r > 1, while existing approaches rely on the assumption of n_r = 1. Furthermore, we find that the experimentally determined values of n_r vary from sample to sample. It is also explained why the derived radiative ideality factor is influenced by the spectral sensitivity of the camera system used in the experiment. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

PIN型和NIP型硅薄膜太阳电池中绒面陷光结构和陷光性能研究

对于硅薄膜太阳电池来说, 无论是PIN型还是NIP型太阳电池, 采用绒面陷光结构来提高入射光的有效利用率是提高太阳电池效率的重要方法之一.本文采用标度相干理论对PIN和NIP型电池的绒面结构的陷光性能进行了数值模拟. 结果表明: PIN电池中前电极和NIP电池中背电极衬底粗糙度分别为160和40 nm时可获得理想的陷光效果; 在不同粗糙度背电极衬底上制备a-SiGe:H电池发现, 使用40和61.5 nm 背电极可获得相当的短路电流密度, 理论分析和实验得到了一致的结果. 关键词： 陷光结构 光散射能力 标量相干理论 硅基薄膜太阳电池     

Nanoimprint texturing of transparent flexible substrates for improved light management in thin‐film solar cells

We present a nanoimprint based approach to achieve efficient light management for solar cells on low temperature transparent polymer films. These films are particularly low‐priced, though sensitive to temperature, and therefore limiting the range of deposition temperatures of subsequent solar cell layers. By using nanoimprint technology, we successfully replicated optimized light trapping textures of etched high temperature ZnO:Al on a low temperature PET film without deterioration of optical properties of the substrate. The imprint‐textured PET substrates show excellent light scattering properties and lead to significantly improved incoupling and trapping of light in the solar cell, resulting in a current density of 12.9 mA/cm², similar to that on a glass substrate. An overall efficiency of 6.9% was achieved for a flexible thin‐film silicon solar cell on low cost PET substrate. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Silicone oxidation for a‐Si:H passivation of wafers bonded to glass

A possible scenario for wafer‐based silicon photovoltaics is the processing of solar modules starting from thin silicon wafers bonded to glass. However, interactions between the adhesive used for bonding and the solar cell processing can affect the surface passivation of the bonded wafer and decrease cell performances. A method that suppresses these interactions and leads to state‐of‐the‐art a‐Si:H surface passivation is presented in this Letter. The method is based on an increase of the surface cross‐linking of a silicone adhesive by means of an O₂ plasma and it is successfully tested on three different silicones. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Current and efficiency improvement for a GaAsP/SiGe on Si tandem solar cell device achieved by light trapping techniques

A GaAsP/SiGe tandem solar cell on Si substrate has been further fabricated using light trapping techniques, such as texturing and adding a back surface reflector, and thinning the Si substrate. This is of importance to increase the J_sc of the Si_0.18Ge_0.82 bottom cell in this tandem system since bottom cell is current limiting. The J_sc of the bottom cell has been increased by relative 7.4%. This current improvement leads to a predicted efficiency of near 21% for this tandem device, with an absolute efficiency improvement of 0.3% over previous results without light trapping processes. The current of the bottom cell can be further improved by optimizing the bottom cell structure and texturing process, further thinning the Si substrate and increasing Ge concentration. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Study of detached back reflector designs for thin‐film silicon solar cells

We present a precise and flexible method to investigate the impact of diverse detached reflector designs on the optical response of p–i–n thin‐film silicon solar cells. In this study, the term detached reflectors refers to back reflectors that are separated from the silicon layers by an intermediate rear dielectric of several micrometers. Based on the utilization of a highly conductive n‐doped layer and a local electrical contact scheme, the method allows the use of non‐conductive rear dielectrics such as air or transparent liquids. With this approach, diverse combinations of back reflector and rear dielectric can be placed behind the same solar cell, providing a direct evaluation of their impact on the device performance. We demonstrate the positive effect of a rear dielectric of low refractive index on the light trapping and compare the performance of solar cells with an air/Ag and a standard ZnO/Ag back reflector design. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

A glass thinning and texturing method for light incoupling in thin‐film polycrystalline silicon solar cells application

For polycrystalline silicon (poly‐Si) thin‐film solar cells on ～3 mm borosilicate glass, glass thinning reduces the glass absorption and light leaking to neighbouring cells; the glass texturing of the sun‐facing side suppresses reflection. In this Letter, a labour‐free wet etching method is developed to texture and thin the glass at the same time in contrast to conventionally separated labour‐intensive glass thinning and texturing processes. For 2 cm² size poly‐Si thin‐film solar cells on glass superstrate, this wet etching successfully thins down the glass from 3 mm to 0.5 mm to check the ultimate benefit of the process and introduces a large micron texture on the sun‐facing glass surface. The process enhances J_sc by 6.3% on average, with the optimal J_sc enhancement of 8%, better than the value of 4.6% found in the literature. This process also reduces the loss in external quantum efficiency (EQE loss), which is due to light leaking to neighbouring cells, dramatically. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Comparison of batch and in‐line PECVD of a‐Si:H passivation layers for silicon heterojunction solar cells

We present PECVD deposition of i‐a‐Si:H in an in‐line configuration for the fabrication of silicon heterojunction solar cells. For industry, in‐line processing has the potential to increase production throughput and yield. We compared batch and in‐line fabrication of i‐a‐Si:H passivation samples with identical plasma conditions and observed that the a‐Si:H material properties do not significantly differ. In batch‐type production the substrate is in the plasma zone at the moment of ignition, whereas for in‐line deposition the substrate is introduced into the plasma zone when steady plasma conditions have been reached. Our preliminary results show that there are depositions conditions that result both for in‐line and batch‐type deposition in good i‐a‐Si:H passivation layers. Therefore both methods can equally well be considered for the production of silicon heterojunction solar cells. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Unlinking absorption and haze in thin film silicon solar cells front electrodes

We study the respective influence of haze and free carrier absorption (FCA) of transparent front electrodes on the photogenerated current of micromorph thin film silicon solar cells. To decouple the haze and FCA we develop bi‐layer front electrodes: a flat indium tin oxide layer assures conduction and allows us to tune FCA while the haze is adjusted by varying the thickness of a highly transparent rough ZnO layer. We show how a minimum amount of FCA leads only to a few percents absorption for a single light path but to a strong reduction of the cell current in the infrared part of the spectrum. Conversely, a current enhancement is shown with increasing front electrode haze up to a saturation of the current gain. This saturation correlates remarkably well with the haze of the front electrode calculated in silicon. This allows us to clarify the requirements for the front electrodes of micromorph cells. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Micro gratings written in ZnO:Al thin films using picosecond UV‐laser interference patterning

Diffraction micro gratings have been written in ZnO:Al thin films using a picosecond laser operating at 355 nm. Micro gratings of 20 µm diameter with a period of 860 nm show a groove depth up to 120 nm. The total transmittance of square‐centimeter‐size grating‐textured ZnO:Al films was almost unchanged after grating formation, while the sheet resistance increased moderately. The textured films reached haze values of 9% at 700 nm. This simple texturing method can be applied also to ZnO:Al films that cannot be texture etched.

     

Photonic nanostructures for advanced light trapping in silicon solar cells: the impact of etching on the material electronic quality

Dry plasma etching, commonly used by the Photonics community as the etching technique for the fabrication of photonic nanostructures, could be a source of device performance limitations when used in the frame of silicon photovoltaics. So far, the lack of silicon solar cells with state‐of‐the‐art efficiencies utilizing nanophotonic concepts shows how challenging their integration is, owing to the trade‐off between optical and electrical properties. In this study we show that dry plasma etching results in the degradation of the silicon material quality due to (i) a high density of dangling bonds and (ii) the presence of sub‐surface defects, resulting in high surface recombination velocities and low minority carrier lifetimes. On the contrary, wet chemical anisotropic etching used as an alternative, leads to the formation of inverted nanopyramids that result in low surface recombination velocity and low density of dangling bonds. The proposed inverted nanopyramids could enable high efficiency photonic assisted solar cells by offering the potential to achieve higher short‐circuit current without degrading the open circuit voltage. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

CdTe太阳电池前电极SnO2:F/SnO2复合薄膜性能分析

减薄CdS窗口层是提高CdS/CdTe太阳电池转换效率的有效途径之一,减薄窗口层会对器件造成不利的影响,因此在减薄了的窗口层与前电极之间引入过渡层非常必要.利用反应磁控溅射法在前电极SnO₂:F薄膜衬底上制备未掺杂的SnO₂薄膜形成过渡层,并将其在N₂/O₂=4 ∶1,550 ℃环境进行了30 min热处理,利用原子力显微镜、X射线衍射仪、紫外分光光度计对复合薄膜热处理前后的形貌、结构、光学性能进行了表征,同时分析了复     

Improved control of the phosphorous surface concentration during in‐line diffusion of c‐Si solar cells by APCVD

Emitter formation for industrial crystalline silicon (c‐Si) solar cells is demonstrated by the deposition of phosphorous‐doped silicate glasses (PSG) on p‐type monocrystalline silicon wafers via in‐line atmospheric pressure chemical vapor deposition (APCVD) and subsequent thermal diffusion. Processed wafers with and without the PSG layers have been analysed by SIMS measurements to investigate the depth profiles of the resultant phosphorous emitters. Subsequently, complete solar cells were fabricated using the phosphorous emitters formed by doped silicate glasses to determine the impact of this high‐throughput doping method on cell performance. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Nanotextured multicrystalline Al‐BSF solar cells reaching 18% conversion efficiency using industrially viable solar cell processes

We report recent achievements in adapting industrially used solar cell processes on nanotextured surfaces. Nanostructures were etched into c‐Si surfaces by dry exothermic plasma‐less reaction of F species with Si in atmospheric pressure conditions and then modified using a short post‐etching process. Nanotextured multicrystalline wafers are used to prepare Al‐BSF solar cells using industrially feasible solar cell proc‐ essing steps. In comparison to the reference acidic textured solar cells, the nanostructured cells showed gain in short circuit current (J_sc) of up to 0.8 mA/cm² and absolute gain in conversion efficiency of up to 0.3%. The best nanotextured solar cell was independently certified to reach the conversion efficiency of 18.0%. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Multi‐crystalline silicon solar cells with metal‐assisted nano‐texturing using HNO3 as hole injection agent

In this study, metal‐assisted etching (MAE) with nitric acid (HNO₃) as a hole injecting agent has been employed to texture multi‐crystalline silicon wafers. It was previously proven that addition of HNO₃ enabled control of surface texturing so as to form nano‐cone shaped structures rather than nanowires. The process parameters optimized for optically efficient texturing have been applied to multi‐crystalline wafers. Fabrication of p‐type Al:BSF cells have been carried out on textured samples with thermal SiO₂/PECVD‐SiN_x stack passivation and screen printed metallization. Firing process has been optimized in order to obtain the best contact formation. Finally, j_sc enhancement of 0.9 mA/cm² and 0.6% absolute increase in the efficiency have been achieved. This proves that the optimized MAE texture process can be successfully used in multi‐crystalline wafer texturing with standard passivation methods.

J –V curves and SEM images of the nano and iso‐textured samples. j_sc enhancement of 0.9 mA/cm² together with 0.6% absolute efficiency gain was observed on nano‐textured samples.     

微晶硅锗薄膜作为近红外光吸收层在硅基薄膜太阳电池中的应用

采用射频等离子体增强化学气相沉积技术,制备了具有一定晶化率不同Ge含量的氢化微晶硅锗(μcSi1-xGex:H)薄膜.通过Ⅹ射线荧光谱、拉曼光谱、X射线衍射谱、傅里叶红外谱、吸收系数谱和电导率的测试,表征了μc-Si_(1-x)Ge_x:H的材料微结构随Ge含量的演变.研究表明:提高Ge含量可以增强μc-Si_(1-x)Ge_x:H薄膜的吸收系数.将其应用到硅基薄膜太阳电池的本征层中可以有效提高电池的短路电流密度(J_(sc)).特别是在电池厚度较薄或陷光不充分的情况下,长波响应的提高会更为显著.应用ZnO衬底后,在Ge含量分别为9%和27%时,μc-Si_(1-x)Ge_x:H太阳电池的转换效率均超过了7%.最后,将μc-Si_(1-x)Ge_x:H太阳电池应用在双结叠层太阳电池的底电池中,发现μc-Si_(0.73)Ge_(0.27):H底电池在厚度为800 nm时即可得到比1700 nm厚微晶硅(μc-Si:H)底电池更高的长波响应.以上结果体现μc-Si_(1-x)Ge_x:H太阳电池作为高效近红外光吸收层,在硅基薄膜太阳电池中应用的前景.     

Ion implantation into amorphous Si layers to form carrier‐selective contacts for Si solar cells

This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so‐called tunnel oxide passivated contact structure for Si solar cells. They act as carrier‐selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high‐temperature anneal needed for the realization of the passivation quality of the carrier‐selective contacts. The good results on the phosphorus‐doped (implied V_oc = 725 mV) and boron‐doped passivated contacts (iV_oc = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)