Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film

It is demonstrated that the application of an ultrathin aluminum oxide (Al₂O₃) capping film can improve the level of silicon surface passivation obtained by low‐temperature synthesized SiO₂ profoundly. For such stacks, a very high level of surface passivation was achieved after annealing, with S_eff < 2 cm/s for 3.5 Ω cm n‐type c‐Si. This can be attributed primarily to a low interface defect density (D_it < 10¹¹ eV^–1 cm^–2). Consequently, the Al₂O₃ capping layer induced a high level of chemical passivation at the Si/SiO₂ interface. Moreover, the stacks showed an exceptional stability during high‐temperature firing processes and therefore provide a low temperature (≤400 °C) alternative to thermally‐grown SiO₂. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Hole mobility and remote scattering in strained InGaSb quantum well MOSFET channels with Al2O3 oxide

Hall mobility and major scattering mechanisms in surface and buried MBE grown strained InGaSb quantum well (QW) MOSFET channels with in‐situ grown Al₂O₃ gate oxide are analyzed as a function of sheet hole density, top‐barrier thickness and temperature. Mobility dependence on Al_0.8Ga_0.2Sb top‐barrier thickness shows that the relative contribution of interface‐related scattering is as low as ～30% in the surface QW channel. An InAs top capping layer reduces the interface scattering even further; the sample with 3 nm total top‐barrier thickness demonstrates mobility of 980 cm²/Vs giving sheet resistance of 4.3 kΩ/sq, very close to the minimum QW resistance in the bulk. The mobility–temperature dependences indicate that the interface‐related scattering is dominated by remote Coulomb scattering at hole densities <1 × 10¹² cm^–2. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Silicon surface passivation by atomic‐layer‐deposited Al2O3 facilitated in situ by the combination of H2O and O3 as reactants

We investigate the effect of O₃ and H₂O oxidant pre‐pulse prior to Al₂O₃ atomic layer deposition for Si surface passivation. Interfacial oxide SiO_x formed by the O₃ pre‐pulse is more beneficial than that by H₂O to a high level of surface passivation. The passivation of thinner H₂O–Al₂O₃ films is more improved by this O₃ pre‐pulse. O₃ pre‐pulse for 10 nm H₂O–Al₂O₃ reduces saturation current density in boron emitter to 18 fA cm^–2 by a factor of 1.7. Capacitance–voltage measurements reveal this interfacial oxide plays a role of decreasing interface trap density without detrimental effect to negative charge density of Al₂O₃. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge

Herein we report on the passivation of crystalline silicon by gallium oxide (Ga₂O₃) using oxygen plasma as the oxidizing reactant in an atomic layer deposition (ALD) process. Excess carrier lifetimes of 2.1 ms have been measured on 1.75 Ω cm p‐type silicon, from which a surface recombination current density J₀ of 7 fA cm^–2 is extracted. From high frequency capacitance‐voltage (HF CV) measurements it is shown that, as in the case of Al₂O₃, the presence of a high negative charge density Q_tot/q of up to –6.2 × 10¹² cm^–2 is one factor contributing to the passivation of silicon by Ga₂O₃. Defect densities at midgap on the order of ～5 × 10¹¹ eV^–1 cm^–2 are extracted from the HF CV data on samples annealed at 300 °C for 30 minutes in a H₂/Ar ambient, representing an order of magnitude reduction in the defect density compared to pre‐anneal data. Passivation of a boron‐diffused p⁺ surface (96 Ω/□) is also demonstrated, resulting in a J₀ of 52 fA cm^–2. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Raman‐induced Kerr effect spectroscopy of single‐wall carbon nanotubes aqueous suspensions in the range 0.1–10 and 100–250 cm−1

Here, we study a low (less than 0.1 µg/ml) concentration aqueous suspension of single‐wall carbon nanotubes (SWNTs) by Raman‐induced Kerr effect spectroscopy (RIKES) in the spectral bands 0.1–10 and 100–250 cm⁻¹. This method is capable of carrying out direct investigation of SWNT hydration layers. A comparison of RIKES spectra of SWNT aqueous suspension and that of milli‐Q water shows a considerable growth in the intensity of low wavenumber Raman modes. These modes in the 0.1–10 cm⁻¹ range are attributed to the rotational transitions of H₂O₂ and H₂O molecules. We explain the observed intensity increase as due to the production of hydrogen peroxide and the formation of a low‐density depletion layer on the water–nanotube interface. A few SWNT radial breathing modes (RBM)are observed (ω_RBM = 118.5, 164.7 and 233.5 cm⁻¹) in aqueous suspension, which allows us to estimate the SWNT diameters (∼2.0, 1.5, and 1 nm, respectively). Copyright © 2011 John Wiley & Sons, Ltd.     

Investigation of 4H—SiC metal—insulation—semiconductor structure with Al2O3/SiO2 stacked dielectric

Atomic layer deposited (ALD) Al₂O₃/dry-oxidized ultrathin SiO₂ films as high-k gate dielectric grown on the 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al₂O₃/SiO₂, Al₂O₃, and SiO₂) are fabricated and compared with each other. The I-V measurements show that the Al₂O₃/SiO₂ stack has a high breakdown field ( ≥ 12 MV/cm) comparable to SiO₂, and a relatively low gate leakage current of 1× 10^-7 A/cm² at electric field of 4 MV/cm comparable to Al₂O₃. The 1-MHz high frequency C-V measurements exhibit that the Al₂O₃/SiO₂ stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating less effective charge and slow-trap density near the interface.     

Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices

This paper describes the heavy ion-induced effects on the electrical characteristics of reactively sputtered ZrO₂ and Al₂O₃ high-k gate oxides deposited in argon plus nitrogen containing plasma. Radiation-induced degradation of sputtered high-k dielectric ZrO₂/Si and Al₂O₃/Si interface was studied using 45?MeV Li³⁺ ions. The devices were irradiated with Li³⁺ ions at various fluences ranging from 5?×?10⁹ to 5?×?10¹²?ions/cm². Capacitance–voltage and current–voltage characteristics were used for electrical characterization. Shift in flat band voltage towards negative value was observed in devices after exposure to ion radiation. Post-deposition annealing effect on the electrical behavior of high-k/Si interface was also investigated. The annealed devices showed better electrical and reliability characteristics. Different device parameters such as flat band voltage, leakage current, interface defect density and oxide-trapped charge have been extracted.The surface morphology and roughness values for films deposited in nitrogen containing plasma before and after ion radiation are extracted from Atomic Force Microscopy.     

Influence of precursor gas ratio and firing on silicon surface passivation by APCVD aluminium oxide

Using a high throughput, in‐line atmosphere chemical vapor deposition (APCVD) tool, we have synthesized amorphous aluminum oxide (AlO_x) films from precursors of trimethyl‐aluminum (TMA) and O₂, yielding a maximum deposition 150 nm min^–1 per wafer. For p‐type crystalline silicon (c‐Si) wafers, excellent surface passivation was achieved with the APCVD AlO_x films, with a best maximum effective surface recombination velocity (S_eff,max) of 8 cm/s following a standard industrial firing step. The findings could be attributed to the existence of large negative charge (Q_f ≈ –3 × 10¹² cm^–2) and low interface defect density (D_it ≈ 4 × 10¹¹ eV^–1 cm^–2) achieved by the films. This data demonstrates a high potential for APCVD AlO_x to be used in high efficiency, low cost industrial solar cells. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The electrical characteristics of a 4H-silicon carbide metal-insulator-semiconductor structure with Al2O3 as the gate dielectric

A 4H-silicon carbide metal-insulator-semiconductor structure with ultra-thin Al₂O₃ as the gate dielectric, deposited by atomic layer deposition on the epitaxial layer of a 4H-SiC (0001) 8⁰N-/N+ substrate, has been fabricated. The experimental results indicate that the prepared ultra-thin Al₂O₃ gate dielectric exhibits good physical and electrical characteristics, including a high breakdown electrical field of 25 MV/cm, excellent interface properties (1×10¹⁴ cm^-2) and low gate-leakage current (I_G = 1 × 10^-3 A/cm^-2@E_ox = 8 MV/cm). Analysis of the current conduction mechanism on the deposited Al₂O₃ gate dielectric was also systematically performed. The confirmed conduction mechanisms consisted of Fowler-Nordheim (FN) tunneling, the Frenkel-Poole mechanism, direct tunneling and Schottky emission, and the dominant current conduction mechanism depends on the applied electrical field. When the gate leakage current mechanism is dominated by FN tunneling, the barrier height of SiC/Al₂O₃ is 1.4 eV, which can meet the requirements of silicon carbide metal-insulator-semiconductor transistor devices.     

Study of hydrogenated AlN as an anti‐reflective coating and for the effective surface passivation of silicon

Stacks of aluminum oxide and silicon nitride are frequently used in silicon photovoltaics. In this Letter, we demonstrate that hydrogenated aluminum nitride can be an alternative to this dual‐layer stack. Deposited on 1 Ω cm p‐type FZ silicon, very low effective surface recombination velocities of 8 cm/s could be reached after firing at 820 °C. This excellent passivation is traced back to a high density of fixed charges at the interface of approximately –1 × 10¹² cm^–2 and a very low interface defect density below 5 × 10¹⁰ eV^–1 cm^–2. Furthermore, spectral ellipsometry measurements reveal that these aluminum nitride layers have ideal optical properties for use as anti‐reflective coatings. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical characteristics of GaAs MOS capacitor and field effect transistor with atomic layer-deposited TiO2/Al2O3 dielectrics

The (NH₄)₂S treatment can reduce native oxides and passivate GaAs. Atomic layer-deposited Al₂O₃ can further remove the residue native oxides by self-cleaning. Stacked with high dielectric constant TiO₂ prepared by atomic layer deposition on Al₂O₃/(NH₄)₂S-treated GaAs MOS capacitor, the leakage current densities can reach 4.5 × 10^?8 and 3.4 × 10^?6 A/cm² at ±2 MV/cm. The net effective dielectric constant of the entire stack is 18 and the interface state density is about 4.2 × 10¹¹/cm²/eV. The fabricated enhancement-mode n-channel GaAs MOSFET exhibited good electrical characteristics with a maximum g _m of 122 mS/mm and electron mobility of 226 cm²/V s.     

Optimized emitter contacting on multicrystalline silicon thin film solar cells

We present an optimized contacting scheme for multicrystalline silicon thin film solar cells on glass based on epitaxially crystallized emitters with a thin Al₂O₃ layer and a silver back reflector. In a first step a 6.5 µm thick amorphous silicon absorber layer is crystallized by a diode laser. In a second step a thin silicon emitter layer is epitaxially crystallized by an excimer laser. The emitter is covered by an Al₂O₃ layer with a thickness ranging from 1.0 nm to 2.5 nm, which passivates the surface and acts as a tunnel barrier. On top of the Al₂O₃ layer a 90–100 nm thick silver back reflector is deposited. The Al₂O₃ layer was found to have an optimal thickness of 1.5 nm resulting in solar cells with back reflector that achieve a maximum open‐circuit voltage of 567 mV, a short‐circuit current density of 27.9 mA/cm², and an efficiency of 10.9%. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

An investigation of the Al2O3-CdSe interface in accumulation

The Al₂O₃−CdSe interface of a thin-film transistor is investigated in the frequency range 30 Hz-30 kHz under weak depletion and accumulation. The surface states are, most likely, located in the insulator Al₂O₃ with a concentration varying from 4·10¹⁸ to 10¹⁹ cm⁻³ eV⁻¹. The surface states have a negligible influence on the thin-film transistor operation.     

Passivation of aluminium–n+ silicon contacts for solar cells by ultrathin Al2O3 and SiO2 dielectric layers

Ultra‐thin thermally grown SiO₂ and atomic‐layer‐deposited (ALD) Al₂O₃ films are trialled as passivating dielectrics for metal–insulator–semiconductor (MIS) type contacts on top of phosphorus diffused regions applicable to high efficiency silicon solar cells. An investigation of the optimum insulator thickness in terms of contact recombination factor J_{0_cont} and contact resistivity ρ_c is undertaken on 85 Ω/□ and 103 Ω/□ diffusions. An optimum ALD Al₂O₃ thickness of ～22 Å produces a J_{0_cont} of ～300 fAcm^–2 whilst maintaining a ρ_c lower than 1 mΩ cm² for the 103 Ω/□ diffusion. This has the potential to improve the open‐circuit voltage by a maximum 15 mV. The thermally grown SiO₂ fails to achieve equivalently low J_{0_cont} values but exhibits greater thermal stability, resulting in slight improvements in ρ_c when annealed for 10 minutes at 300 °C without significant changes in J_{0_cont}. The after‐anneal J_{0_cont} reaches ～600 fAcm^–2 with a ρ_c of ～2.5 mΩ cm² for the 85 Ω/□ diffusion amounting to a maximum gain in open‐circuit voltage of 6 mV. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High mobility In2O3:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization

The preparation of high‐quality In₂O₃:H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In₂O₃:H films were deposited by atomic layer deposition at 100 °C, after which they underwent solid phase crystallization by a short anneal at 200 °C. TEM analysis has shown that this approach can yield films with a lateral grain size of a few hundred nm, resulting in electron mobility values as high as 138 cm²/V s at a device‐relevant carrier density of 1.8 × 10²⁰ cm^–3. Due to the extremely high electron mobility, the crystallized films simultaneously exhibit a very low resistivity (0.27 mΩ cm) and a negligible free carrier absorption. In conjunction with the low temperature processing, this renders these films ideal candidates for front TCO layers in for example silicon heterojunction solar cells and other sensitive optoelectronic applications. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Improved performance of InGaZnO thin-film transistors with Ta2O5/Al2O3 stack deposited using pulsed laser deposition

Ta₂O₅/Al₂O₃ stacked thin film was fabricated as the gate dielectric for low-voltage-driven amorphous indium–gallium–zinc-oxide (IGZO) thin film transistors (TFTs). The Ta₂O₅/Al₂O₃ stacked thin film exhibits a combination of the advantages of Al₂O₃ and Ta₂O₅. The IGZO TFT with Ta₂O₅/Al₂O₃ stack exhibits good performance with large saturation mobility of 26.66 cm² V⁻¹ s⁻¹, high on/off current ratio of 8 × 10⁷, and an ultra-small subthreshold swing (SS) of 78 mV/decade. Such small SS value is even comparable with that of submicrometer single-crystalline Si MOSFET.     

Enhanced rear‐side reflection and firing‐stable surface passivation of silicon solar cells with capping polymer films

Low refractive index polymer materials have been investigated with a view to form the back surface mirror of advanced silicon solar cells. SiO_x:H or AlO_y SiO_x:H polymer films were spun on top of an ultra‐thin (<10 nm) atomic‐layer‐deposited (ALD) Al₂O₃ layer, itself deposited on low‐resistivity (1 Ω cm) p‐type crystalline silicon wafers. These double‐layer stacks were compared to both ALD Al₂O₃ single layers and ALD Al₂O₃/plasma‐enhanced chemical vapour deposited (PECVD) SiN_x stacks, in terms of surface passivation, firing stability and rear‐side reflection. Very low surface recombination velocity (SRV) values approaching 3 cm/s were achieved with ALD Al₂O₃ layers in the 4–8 nm range. Whilst the surface passivation of the single ALD Al₂O₃ layer is maintained after a standard firing step typical of screen printing metallisation, a harsher firing regime revealed an enhanced thermal stability of the ALD Al₂O₃/SiO_x:H and ALD Al₂O₃/AlO_y SiO_x:H stacks. Using simple two‐dimensional optical modelling of rear‐side reflection it is shown that the low refractive index exhibited by SiO_x:H and AlO_y SiO_x:H results in superior optical performance as compared to PECVD SiN_x, with gains in photogenerated current of ～0.125 mA/cm² at a capping thickness of 100 nm. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of high-quality ZnO thin films on (11\bar{2}0) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

High-quality ZnO thin films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy. X-ray diffraction and transmission electron microscopy reveal that the ZnO films have high structural quality and an atomically sharp ZnO/Al₂O₃ interface. The full width at half maximum values of the 0002 and $30\bar{3}2$ ZnO ω-rocking curves are 467.8 and 813.5 arc sec for a 600 nm thick ZnO film. A screw dislocation density of 4.35×10⁸ cm^?2 and an edge dislocation density of 3.38×10⁹ cm^?2 are estimated by X-ray diffraction. The surface of the ZnO epilayers contains hexagonal pits, which can be observed in the Zn-polar ZnO. The films have a resistivity of 0.119 Ω?cm, an electron concentration of 6.85×10¹⁷ cm^?3, and a mobility of 76.5 cm²?V^?1?s^?1 at room temperature. Low temperature photoluminescence measurements show good optical properties comparable to ZnO single crystals.     

Experimental Study and Modelling of Formation and Decay of Active Species in an Oxygen Discharge

A microwave (2.45 GHz) oxygen discharge (3 hPa, 150 W, 50 mL.min^–1) is studied by optical emission spectroscopy of O(⁵P) (line 777.4 nm) and of the atmospheric system of O₂(head‐line 759.4 nm). Calibration of the spectral response of the optical setup is used to determine the concentrations of O(⁵P) and O₂(b). The concentration of the O(⁵P) atoms is in the range 108–109 cm^–3 and the concentration of the O₂(b) molecules is in the range 10¹⁴ – 2 × 10¹⁴ cm^–3 along the discharge tube. An attempt is made to simulate the experimental results by using coupling the Boltzmann equation, homogeneous energy transfer V‐V and V‐T, heterogeneous reactions on the walls (energy transfer and recombination of atoms) and a kinetic scheme (electronic transfer and chemical reactions). The Boltzmann equation includes momentum transfer, inelastic and superelastic processes and e‐e collisions. V‐V and V‐T transfer equations are obtained from the SSH theory and the kinetic scheme includes 65 reactions with 17 species [electrons e, ions O^– and O₂^–, fundamental electronic neutral species O(³P), O₂, O₂(X,v), O₃ and excited neutral species O₂(a), O₂(b), O₂(A), O(¹D), O(¹S), O(⁵P), O(4d ⁵D^o), O(5s ⁵S^o), O(3d ⁵D^o) and O(4s ⁵S^o)]. A fair agreement between experimental results and modelling is obtained with the following set of fitting values: – heterogeneous deactivation coefficient for O₂(b) γ = 2.6 × 10^–2; – rate constant of reaction [O(¹D) + O(³P) → 2 O(³P)] k₃₄ = 1.4 × 10^–11 cm³.s^–1; – electron concentration in the range 10¹⁰ – 10¹¹ cm^–3. Modelling shows that the recombination coefficient for oxygen atoms on the silica wall (range 1.4 × 10^–3 – 0.2 × 10^–3) is of the same order as the values obtained in a previous paper and that the ratio ([O] / 2 [O₂]initial) is about 33–50%. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Ion synthesis and optical properties of gold nanoparticles in an Al2O3 matrix

Single-crystal Al₂O₃(0001) and Al₂O₃(1120) substrates are implanted by 160-keV Au⁺ ions with doses from 10¹⁵ to 10¹⁷ cm^?2. Some of the implanted samples are air-annealed at 800–1200°C. The properties of the synthesized composite layers are studied by Rutherford backscattering and linear optical reflection measurements, and their nonlinear optical characteristics are examined by RZ-scanning using a picosecond Nd: YAG laser operating at a wavelength of 1064 nm. The Rutherford backscattering spectra indicate that the implanted impurity concentrates near the surface of the Al₂O₃. The formation of gold nanoparticles in the Al₂O₃ can be judged from the characteristic optical plasmon resonance band in the reflectance spectra of the samples irradiated to a dose higher than 6.0 × 10¹⁶ cm^?2. The synthesized particles are shown to be responsible for nonlinear optical refraction in the samples. The nonlinear refractive index, n ₂, and the real part of the third-order susceptibility, Rex⁽³⁾, of the composite layers are determined.