非晶硅锗电池性能的调控研究

采用射频等离子体增强化学气相沉积技术, 研究了非晶硅锗薄膜太阳电池. 针对非晶硅锗薄膜材料的本身特性, 通过调控硅锗合金中硅锗的比例, 实现了对硅锗薄膜太阳电池中开路电压和短路电流密度的分别控制. 借助于本征层硅锗材料帯隙梯度的设计, 获得了可有效用于多结叠层电池中的非晶硅锗电池. 关键词： 非晶硅锗薄膜太阳电池 短路电流密度 开路电压 带隙梯度     

Micro‐photoluminescence spectroscopy on heavily‐doped layers of silicon solar cells

We report and explain the photoluminescence spectra emitted from silicon solar cells with heavily‐doped layers at the surface. A micro‐photoluminescence spectroscopy system is employed to investigate the total spectrum emitted from both the heavily‐doped layer and the silicon substrate with micron‐scale spatial resolution. The two regions of the device give rise to separate photoluminescence peaks, due to band‐gap narrowing effects in the highly‐doped layer. Two key parameters, the absorption depth of the excitation wavelength, and the sample temperature, are shown to be critical to reveal the separate signatures from the two regions. Finally, this technique is applied to locally diffused and laser‐doped regions on silicon solar cell pre‐cursors, demonstrating the potential value of this micron‐scale technique in studying and optimizing locally doped regions. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Multistep deposition of Cu2Si(S,Se)3 and Cu2ZnSiSe4high band gap absorber materials for thin film solar cells

Cu₂ZnSi(S,Se)₄ and Cu₂Si(S,Se)₃ are potential materials to obtain cost effective high band gap absorbers for tandem thin film solar cell devices. A method to synthesize Cu₂SiS₃, Cu₂SiSe₃and Cu₂ZnSiSe₄thin film absorbers is proposed. This method is based on a multistep process, using sequential deposition and annealing processes. X‐ray diffraction analysis performed on the final thin films have confirmed the presence of the Cu₂Si(S,Se)₃ and Cu₂ZnSiSe₄phases. Scanning electron microscopy images revealed the formation of polycrystalline layers with grains size up to 1 µm. The band gap of the ternary Cu₂SiSe₃ and Cu₂SiS₃, and quaternary Cu₂ZnSiSe₄ based thin films as determined from optical and photoluminescence measurements are found to be close to their theoretical values. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Porous silicon layers prepared by electrochemical etching for application in silicon thin film solar cells

In this paper, multilayer structures of porous silicon were fabricated by using electrochemical etching and characterized for its optical properties and surface morphology. Samples of monolayer of porous silicon were grown to study the characteristics of porous layer formation with respect to applied current density, etching time and hydrofluoric acid concentrations. Photoluminescence peaks of red emission at wavelength 695 and 650 nm were observed from multilayer porous silicon structures. By atomic force microscopy measurement, hillocks like surface were clearly observed within the host material, which confirmed the formation of pores.     

Very thin,highly‐conductive ZnO:Al front electrode on textured glass as substrate for thin‐film silicon solar cells

A very thin (250 nm), highly conductive (annealed), non‐texturized DC‐sputtered aluminum‐doped zinc oxide layer (ZnO:Al) deposited on a textured glass is used as substrate for thin‐film silicon solar cells. Compared to the classical approach, where wet‐chemically texturized ZnO:Al on planar glass is used, this approach allows a reduction in the as‐deposited ZnO:Al thickness of almost 70% while at the same time, thanks to the good light trapping capability of the glass texture the efficiency of the cells was maintained at the high level of 10.9%.

     

Comparison of batch and in‐line PECVD of a‐Si:H passivation layers for silicon heterojunction solar cells

We present PECVD deposition of i‐a‐Si:H in an in‐line configuration for the fabrication of silicon heterojunction solar cells. For industry, in‐line processing has the potential to increase production throughput and yield. We compared batch and in‐line fabrication of i‐a‐Si:H passivation samples with identical plasma conditions and observed that the a‐Si:H material properties do not significantly differ. In batch‐type production the substrate is in the plasma zone at the moment of ignition, whereas for in‐line deposition the substrate is introduced into the plasma zone when steady plasma conditions have been reached. Our preliminary results show that there are depositions conditions that result both for in‐line and batch‐type deposition in good i‐a‐Si:H passivation layers. Therefore both methods can equally well be considered for the production of silicon heterojunction solar cells. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

On the mechanism of potential‐induced degradation in crystalline silicon solar cells

Multicrystalline standard p‐type silicon solar cells, which undergo a potential induced degradation, are investigated by different methods to reveal the cause of the degradation. Microscopic local ohmic shunts are detected by electron‐beam‐induced current measurements, which correlate with the sodium distribution in the nitride layer close to the Si surface imaged by time‐of‐flight secondary ion mass spectroscopy. The results are compatible with a model of the formation of a charge double layer on or in the nitride, which inverts the emitter. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

PIN型和NIP型硅薄膜太阳电池中绒面陷光结构和陷光性能研究

对于硅薄膜太阳电池来说, 无论是PIN型还是NIP型太阳电池, 采用绒面陷光结构来提高入射光的有效利用率是提高太阳电池效率的重要方法之一.本文采用标度相干理论对PIN和NIP型电池的绒面结构的陷光性能进行了数值模拟. 结果表明: PIN电池中前电极和NIP电池中背电极衬底粗糙度分别为160和40 nm时可获得理想的陷光效果; 在不同粗糙度背电极衬底上制备a-SiGe:H电池发现, 使用40和61.5 nm 背电极可获得相当的短路电流密度, 理论分析和实验得到了一致的结果. 关键词： 陷光结构 光散射能力 标量相干理论 硅基薄膜太阳电池     

CZTS‐based materials and interfaces and their effects on the performance of thin film solar cells

Cu₂ZnSnS₄ (CZTS) and its related materials such as Cu₂ZnSnSe₄ (CZTSe) and Cu₂ZnSn(S,Se)₄ (CZTSSe) have attracted considerable attention as an absorber material for thin film solar cells due to the non‐toxicity, elemental abundance, and large production capacity of their constituents. Despite the similarities between CZTS‐based materials and Cu(In,Ga)Se₂(CIGS), the record efficiency of CZTS‐based solar cells remains significantly lower than that of CIGS solar cells. Considering that the difference between the two lies in the choice of the absorber material, the cause of the lower efficiency of CZTS‐based solar cells can be isolated to the issues associated with CZTS‐based materials and their related interfaces. Herein, these issues and the work done to understand and resolve them is reviewed. Unlike existing review papers, every unique region of CZTS‐based solar cells that contributes to its lower efficiency, namely: (1) the bulk of the absorber, (2) the grain boundaries of the absorber, (3) the absorber/buffer layer interface, and (4) the absorber/back contact interface are surveyed. This review also intends to identify the major unresolved issues and the potential improvement approaches of realizing sizable improvements in the solar cells' efficiency, thus providing a guide as to where research efforts should be focused. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

High‐performance a‐Si1–xOx:H/c‐Si heterojunction solar cells realized by the a‐Si:H/a‐Si1–xOx:H stack buffer layer

We used amorphous silicon oxide (a‐Si_1–xO_x:H) and microcrystalline silicon oxide (µc‐Si_1–xO_x:H) as buffer layer and p‐type emitter layer, respectively, in n‐type silicon hetero‐junction (SHJ) solar cells. We proposed to insert a thin (2 nm) intrinsic amorphous silicon (a‐Si:H) thin film between the thin (2.5 nm) a‐Si_1–xO_x:H buffer layer and the p‐layer to form a stack buffer layer of a‐Si:H/a‐Si_1–xO_x:H. As a result, a high open‐circuit voltage (V_OC) and a high fill factor (FF) were obtained at the same time. Finally, a high efficiency of 19.0% (J_SC = 33.46 mA/cm², V_OC = 738 mV, FF = 77.0%) was achieved on a 100 μm thick polished wafer using the stack buffer layer.

     

A glass thinning and texturing method for light incoupling in thin‐film polycrystalline silicon solar cells application

For polycrystalline silicon (poly‐Si) thin‐film solar cells on ～3 mm borosilicate glass, glass thinning reduces the glass absorption and light leaking to neighbouring cells; the glass texturing of the sun‐facing side suppresses reflection. In this Letter, a labour‐free wet etching method is developed to texture and thin the glass at the same time in contrast to conventionally separated labour‐intensive glass thinning and texturing processes. For 2 cm² size poly‐Si thin‐film solar cells on glass superstrate, this wet etching successfully thins down the glass from 3 mm to 0.5 mm to check the ultimate benefit of the process and introduces a large micron texture on the sun‐facing glass surface. The process enhances J_sc by 6.3% on average, with the optimal J_sc enhancement of 8%, better than the value of 4.6% found in the literature. This process also reduces the loss in external quantum efficiency (EQE loss), which is due to light leaking to neighbouring cells, dramatically. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Localization and characterization of annealing‐induced shunts in Ni‐plated monocrystalline silicon solar cells

The adhesion of Ni–Cu‐plated contacts requires annealing, which can lead to an electrical degradation of the solar cell. A combination of optical imaging methods and electron microscopical cross‐section analysis was used to investigate the annealing‐induced shunts on monocrystalline solar cells. The results show that Ni spikes cause the lowering of the pseudo fill factor and reveal that these nonlinear shunts show the same behavior as recombination active breakdown sites on multicrystalline silicon solar cells, including radiation of visible light while breakdown. Using reverse biased electroluminescence set‐up the shunts could be localized in top view with µm size lateral resolution. Subsequently, a cross‐section was prepared on a radiative breakdown spot. Advanced electron microscopic investigations reveal defect structures featuring nickel precipitates on the position of the light source. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Assessment of the illumination dependency of Al2O3 and SiO2 rear‐passivated p‐type silicon solar cells

This Letter discusses an important difference between positively charged SiO₂ and negatively charged Al₂O₃ rear‐passivated p‐type Si solar cells: their illumination level dependency. For positively charged SiO₂ rear‐passivated p‐type Si solar cells, a loss in short circuit current (J_SC) and open circuit voltage (V_OC) as a function of illumination level is mainly caused by parasitic shunting and a decrease in surface recombination, respectively. Hence, the relative loss in cell conversion efficiency, J_SC, and V_OC as a function of the illumination level for SiO₂ compared to Al₂O₃ rear‐passivated p‐type Si solar cells has been measured and discussed. Subsequently, an exponential decay fit of the loss in cell efficiency is applied in order to estimate the difference in the energy output for both cell types in three different territories: Belgium (EU), Seattle and Austin (US). The observed trends in the difference in energy output between both cells, as a function of time of the year and region, are as expected and discussed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The role of stacking faults for the formation of shunts during potential‐induced degradation of crystalline Si solar cells

Mono‐ and multicrystalline solar cells have been stressed by potential‐induced degradation (PID). Cell pieces with PID‐shunts are imaged by SEM using the EBIC technique in plan view as well as after FIB cross‐section preparation. A linear shaped signature is found in plan‐view EBIC images at every potential‐induced shunt position on both mono‐ and multicrystalline solar cells. Cross‐sectional SEM and TEM images reveal stacking faults in a {111} plane. Combined TEM/EDX measurements show that the stacking faults are strongly decorated with sodium. Thus, the electric conductivity of stacking faults is assumed to arise under the influence of sodium ion movement through a high electric field across the SiN_x anti‐reflective layer, resulting in PID. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells

This paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with H$_{2}$ prior to plasma ignition, and selecting proper discharging time after silane flow injection. Material prepared under these conditions at a deposition rate of 0.78\,nm/s maintains higher crystallinity and fine electronic properties. By H-plasma treatment before i-layer deposition, single junction $\mu $c-Si:H solar cells with 5.5{\%} efficiency are fabricated.     

Passivation of aluminium–n+ silicon contacts for solar cells by ultrathin Al2O3 and SiO2 dielectric layers

Ultra‐thin thermally grown SiO₂ and atomic‐layer‐deposited (ALD) Al₂O₃ films are trialled as passivating dielectrics for metal–insulator–semiconductor (MIS) type contacts on top of phosphorus diffused regions applicable to high efficiency silicon solar cells. An investigation of the optimum insulator thickness in terms of contact recombination factor J_{0_cont} and contact resistivity ρ_c is undertaken on 85 Ω/□ and 103 Ω/□ diffusions. An optimum ALD Al₂O₃ thickness of ～22 Å produces a J_{0_cont} of ～300 fAcm^–2 whilst maintaining a ρ_c lower than 1 mΩ cm² for the 103 Ω/□ diffusion. This has the potential to improve the open‐circuit voltage by a maximum 15 mV. The thermally grown SiO₂ fails to achieve equivalently low J_{0_cont} values but exhibits greater thermal stability, resulting in slight improvements in ρ_c when annealed for 10 minutes at 300 °C without significant changes in J_{0_cont}. The after‐anneal J_{0_cont} reaches ～600 fAcm^–2 with a ρ_c of ～2.5 mΩ cm² for the 85 Ω/□ diffusion amounting to a maximum gain in open‐circuit voltage of 6 mV. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)