Shubnikov-de Haas effects in Bi2Se3 with high carrier concentrations

Shubnikov-de Haas frequencies were measured in highly degenerate n-type Bi₂Se₃ having a higher carrier density (～9 × 10²⁵m^-3) than previously reported. The Fermi surface was found to be elongated along the trigonal axis, fitting a spheroidal model with an axial ratio of 5.0 for angles up to θ = 45°. Comparison of the number of carriers obtained from Hall measurements with that obtained from the Shubnikov-de Haas measurement supports the contention that the lowest conduction band minimum is a single surface located in the center of the Brillouin zone. The higher effective mass (0.25 m₀) found for these carrier concentrations indicates that the band is non-parabolic.     

Effective electron mass in high-mobility SiGe/Si/SiGe quantum wells

The effective mass m* of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron densities, n _s , the effective mass has been found to grow with decreasing n _s , obeying the relation m*/m _b = n _s /(n _s ? n _c ), where m _b is the electron band mass and n _c ≈ 0.54 × 10¹¹ cm^?2. In samples with maximum mobilities ranging between 90 and 220 m²/(V s), the dependence of the effective mass on the electron density has been found to be identical suggesting that the effective mass is disorder-independent, at least in the most perfect samples.     

Low temperature subband 2D electron mobilities in heavy delta- and modulation doped GaAs/GaAlAs heterostructures

We synthesised high-2D electron-density GaGs/GaAlAs heterostructures with different distance L_σ of Si delta-layer in GaAs from the heterojunction and uniform doped GaAlAs. The quantum Hall effect and Shubnikov-de Haas effect were measured for temperatures down to 0.4 K in magnetic fields up to 40 T. The enhanced 2D electron concentration achieved was 1.1^*10¹³ cm^?2 in six filled subbands. The Hall mobility depends on L_σ and has maximum for L_σ=600÷750Å. From the amplitudes of the SdH oscillations and Fourier transforms the subband mobilities and electron concentration in each subband have been extracted. According to calculations intersubband electron scattering appears to be important and reduces mobilities in subbands.     

Magnetothermal factor of intersubband relaxation of 2D electrons from a highly doped heterotransition in AlGaAs (Si)/GaAs

Characteristics of the Shubnikov-de Haas transverse magnetoresistance oscillations of 2D electrons in highly dopedAlGaAs(Si)/GaAs heterostructures are investigated in the present paper. Anomalies caused by the occupation of two quantization subbands are revealed for samples with 2D-electron density n_s>7·10¹¹ cm⁻² at T=1.7–16 K and magnetic field induction B up to 7.4 T. The dependences of the normalized oscillation amplitude on the magnetic field show bends that typically displace toward weaker magnetic fields with decreasing temperature and electron density n_s. A nonmonotonic (oscillating) dependence of the Dingle temperature on the experimental temperature is found. These anomalies are interpreted for a model of the occupation of two quantization subbands with electrons. They are caused by the competitive character, of intersubband 2D-electron scattering. Small-angle relaxation times are estimated for 2D electrons of the zero and first quantization subbands. S. A. Esenin Ryazan' State Pedagogical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 52–57, January, 2000.     

Shubnikov-de haas effect in n-CdSnAs2

Shubnikov-de Haas oscillations in the transverse magnetoresistance of single-crystalline n-type CdSnAs₂ have been recorded at temperatures between 2 and 25 K in magnetic fields up to 5T. The electron concentration of the samples ranged from 2 × 10¹⁷ to 2 × 10¹⁸ cm^?3. The angular dependences of the oscillation periods and cyclotron effective masses showed that the conduction band exhibits an energy dependent anisotropy, obeying the Kildal band structure model. For the low-temperature values of the band parameters we found: a band gap E_g = 0.30 eV, a spin-orbit splitting Δ = 0.50 eV, a crystal field splitting parameter δ = ?0.09 eV, and an interband matrix element P = 8.5 × 10^?8eV cm. This simple four-level model was found to be not adequate to describe quantitatively the observed electronic effective g-factor for a sample with low electron concentration.     

Electronic properties of Bi2Se3 crystals

Bismuth selenide crystals were grown from melts with liquid concentrations within 0·2 per cent of stoichiometry. The resulting crystals were examined structurally showing that single crystal samples could be cut for electronic property measurements. Samples were n-type and degenerate (n ～ 2 × 10²⁵ m^?3). Hall, magnetoresistance and Shubnikov-de Haas measurements confirm that the carriers lie in a single minimum located at the centre of the Brillouin Zone. The results are discussed in terms of a non-ellipsoidal band model, and the degeneracy discussed in terms of a defect model.     

Surface quantum oscillations in (110) and (111) n-type silicon inversion layers

Shubnikov-de Haas oscillations have been studied for (110) and (111) n-type silicon inversion layers. The measured cyclotron masses m_c = (0.38 ± 0.03)m₀ and m_c = (0.40 ± 0.03)m₀ for (110) and (111) planes, respectively, are larger than theoretically predicted values. The experimental valley degeneracy factor g_v = 2 ± 0.2 for both orientations is also at variance with self consistent calculations. The electronic g-factor depends on the surface carrier concentration and is enhanced over its bulk value. There was no evidence for the occupation of other subbands.     

调制掺杂GaAs/AlGaAs 2DEG材料持久光电导及子带电子特性研究

在掺Si的GaAs/AlGaAs二维电子气(2DEG)结构中，得到μ_2K=1.78×10^{6cm2/(V·s)的高迁移率.在低温(2K)和高磁场(6T)的条件下，对样品进行红 光辐照，观察到持久光电导(PPC)效应，电子浓度在光照后显著增加.通过整数量子霍尔效应 (IQHE)和Shubnikov-de Haas (SdH)振荡的测量，研究了2DEG的子带电子特性.样品在低温光 照后2DEG中第一子带和第二子带的电子浓度同时随电子总浓度的增加而增加；而且电子迁移 率也明显提高.同时，通过整数霍尔平台的宽度对光照前后电子的量子寿命变短现象作了理 论分析. 关键词： 二维电子气 量子霍尔效应 SdH振荡 持久光电导效应}     

AlxGa1-x N/GaN调制掺杂异质结构的子带性质研究

通过低温和强磁场下的磁输运测量研究了Al_0.22Ga_0.78N/GaN调制掺杂异质结构中2DEG的子带占据性质和子带输运性质.在该异质结构的磁阻振荡中观察到了双子带占据现象，并发现2DEG的总浓度随第二子带浓度的变化呈线性关系.得到了该异质结构中第二子带被2DEG占据的阈值电子浓度为7.3×10¹²cm^-2.采用迁移率谱技术得到了不同样品的分别对应于第一和第二子带的输运迁移率.发现当样品产生应变弛豫时第一子带的电子迁移 关键词： AlGaN/GaN异质结 二维电子气 子带占据 输运迁移率     

Measurement of Ar(I) and Ar(II) transition probabilities in LTE ARC plasmas

The transition probabilities of two Ar(I) lines and one Ar(II) line have been measured in emission on wall-stabilized argon arc plasmas (0·5×10⁵?p, Nm^-2?3×10⁵; 10,000?T, K?20,000; 10²²?N_e, m^-3?5×10²³) using the “method of best fit (MBF)”. The results (without line-wing correction) are for Ar(I) at 714·7 nm, A_nm=5·66×10⁵ s^-1±5%; for Ar(I) at 430·0 nm, A_nm=3·40×10⁵ s^-1±5%; for Ar(II) at 480·6 nm, A_nm=8·82×10⁷ s^-1±7%. These values were not influenced by deviations from LTE, which have been observed at electron number densities n_e?10²³ m^-3. The small uncertainties were achieved after careful corrections of different sources of error.     

Analysis of the spin splitting of maxima of quantum oscillations of the resistivity of n-Bi-Sb semiconductor alloys in a magnetic field parallel to the bisector axis

In samples of semiconductor alloys n-Bi_0.93Sb_0.07 with different electron concentrations (n ₁ = 8 × 10¹⁵ cm^?3, n ₂ = 1.2 × 10¹⁷ cm^?3, and n ₃ = 1.9 × 10¹⁸ cm^?3), dependences of the electrical resistivity on magnetic fields up to 45 T parallel to the current and the bisector axis (H ‖ C ₁ ‖ j) have been measured at temperatures of 1.5, 4.5, and 10 K. The obtained dependences ρ₂₂(H) demonstrate quantum oscillations of the resistivity (Shubnikov-de Haas effect), and, in high magnetic fields, there is a resistivity maximum far away from other maxima. On assumption that this maximum is related to the spin-split Landau level N = 0^? for electrons of the main ellipsoid, the spin-splitting parameters are calculated for electrons of the main ellipsoid: γ₁ = 0.87, γ₂ = 0.8, and γ₃ = 0.73. Using these values, the oscillation maxima can be reliably related to the numbers of split Landau levels for electrons of the main and secondary ellipsoids. The dependences of the resistivity ρ₁₁ and the Hall coefficient R _31.2 on magnetic field have been measured in a transverse magnetic field at H ‖ C ₁ and j ‖ C ₂ on the sample with the electron concentration n ₄ = 1.4 × 10¹⁷ cm^?3. Using similar analysis, the spin-splitting parameter is found to be γ₄ = 0.85, which is close to the value of γ₂ = 0.8 obtained for the sample with close electron concentration (n ₂ = 1.2 × 10¹⁷ cm^?3) during the measurements in a longitudinal magnetic field. The quantum oscillation maxima of Hall coefficient R _31.2 are shifted to the range of high magnetic fields as compared to the quantum oscillation maxima of resistivity ρ₁₁.     

A plasma resonance study of valley transfer in (001) Si inversion layers

We observed the two-dimensional plasmons of the two-component electron plasma in the (001) Si-inversion layer resulting from simultaneous population of the [001] valley, E₀, and the [010] valley, E₀′, subbands under a compressional uniaxial stress along [010]. Our data show an onset of electron transfer from E₀ to E₀′ at X = (1.4 ± 0.1) kbar for n = 1.67 × 10¹² cm^?2 and X = (1.2 ± 0.2) kbar for n = 2.60 × 10¹² cm^?2, consistent with the theory of Takada and Ando that includes the electron-electron correlation effects.     

Comparison of Shubnikov-de Haas effect and cyclotron resonance on Si(100) MOS transistors under uniaxial stress

The stress induced population of the non-equivalent subbands E₀ to E′₀ is investigated by measurements of the magnetoconductivity — the Shubnikov-de Haas oscillations — and the cyclotron resonance taken on the same MOS transistor under identical conditions. In cyclotron resonance with increasing stress, a gradual transfer of carriers from E₀ to E′₀ is observed, whereas the Shubnikov-de Haas periodicity is unaffected and always yields a valley degeneracy of two. A domain model is required to resolve this apparent discrepancy.     

An investigation of lithium transport properties in V6O13 single crystals

Lithium has been incorporated into single crystals of V₆O₁₃ by coulometric titration in solid state electrochemical cells. A single phase region was identified for Li_xV₆O₁₃ between x=0 and x=0.17 at 120°C. The lithium chemical diffusion coefficient, self-diffusion coefficient, ionic conductivity and partial molar entropy have been estimated at intervals over this composition range in two specific crystallographic directions. The chemical diffusion coefficients were found to be constant in a particular crystal direction with values of 3.5 × 10^-8 cm² s^-1 and 4.9 × 10^-9 cm² s^-1 perpendicular to the (0 1 0) and (0 0 1) planes respectively.     

Two-dimensional electron-hole system in a HgTe-based quantum well

A two-dimensional electron-hole system consisting of light high-mobility electrons with a density of N _s = (4–7) × 10¹⁰ cm^?2 and a mobility of μ _n = (4–6) × 10⁵ cm²/V s and heavier low-mobility holes with a density of P _s = (0.7–1.6) × 10¹¹ cm^?2 and a mobility of μ _p = (3–7) × 10⁴ cm²/V s has been discovered in a quantum well based on mercury telluride with the (013) surface orientation. The system exhibits a number of specific magnetotransport properties in both the classical magnetotransport (positive magnetoresistance and alternating Hall effect) and the quantum Hall effect regime. These properties are associated with the coexistence of two-dimensional electrons and holes.     

Surface cyclotron resonance in Si under uniaxial stress

The cyclotron resonance of inversion-layer electrons on (100)p-type Si is found to depend sensitively on an externally applied compressive stress. At low temperatures (T ? 10 K) we observe a considerable increase of the cyclotron mass m¹_c with stress S along the [001] direction. The effect is most strongly observed at low electron densities n_s. For $\text{S～1.5 × 10}{}^9\text{dyne}\text{cm}{}^2$ and n_s～2 × 10¹¹cm^-2 we obtain $\text{m}{}^1{}_{\mathrm{c}}\text{～0.4 m}{}_0$ instead of the expected 0.2m₀. Along with this change of $\text{m}{}^1{}_{\mathrm{c}}$ a strong narrowing of the resonance is noted. Raising the temperature gives an additional n_s- dependent increase of $\text{m}{}^1{}_{\mathrm{c}}$.     

Quantum and semiclassical oscillations in the organic metal (BEDO-TTF)2Clx(H2O)y

We study quantum (Shubnikov-de Haas and de Haas-van Alphen) oscillations and angular oscillations of the reluctance in the organic quasi-two-dimensional metal (BO)₂Cl_x(H₂O)_y. We show that the Fermi surface in this compound consists of a slightly corrugated cylinder with its axis perpendicular to the conducting plane. The cross section of the cylinder in this plane is a perfect circle of radius k _F≃3×10⁷ cm⁻¹. The effective carrier mass associated with this cylinder is m*=(1.65–2.0) m ₀ in the conducting plane, while the Dingle temperature is T _D=3–4 K. Zh. éksp. Teor. Fiz. 114, 1137–1146 (September 1998)     

单边掺杂InAlAs/InGaAs单量子阱中二维电子气的磁输运特性

研究了双子带占据的In_0.52Al_0.48As/In_0.53Ga_{0 .47}As单量子阱中磁电阻的Shubnikov-de Haas(SdH)振荡效应和霍耳效应，获得了不 同子带电子的浓度、迁移率、有效质量和能级位置.低磁感应强度(B＜1.5T)下由迁移率谱和 多载流子拟合相结合的方法得到的各子带电子浓度与通过SdH振荡得到的结果一致.在d ²ρ/dB²-1/B的快速傅里叶变换 关键词： InAlAs/InGaAs单量子阱 SdH振荡 二维电子气 磁致子带间散射     

Quenching kinetics and small signal gain spectrum of the ZnI photodissociation laser

By photodissociation ZnI₂ with 193 nm (ArF) laser radiation, the rate constants for quenching of the upper and lower energy levels of the ZnI (B → X) laser by ZnI₂ have been measured to be (1.7 ± 0.2) × 10^-9 and (1.4 ± 0.4) × 10^-9 cm³ s^-1, respectively. Although the former rate constant was found to be laser intensity-dependent for I ? 10⁵ W cm^-2, the ZnI(B) state radiative lifetime was determined to be 26 ± 4 ns. Also, the small signal gain coefficient, g₀, of this molecular laser has a peak value of ? 15% cm^-1 at λ ? 602 nm and exceeds 5% cm^-1 for 591 nm ≤ λ ≤ 608 nm for a potential tuning range of at least 170 Å.     

Quantum transport in periodically δ-doped GaAs

The Shubnikov-de Haas spectra of GaAs samples with a periodical doping with Si were measured at 4.2 K using fields of 0–14 T. From the Shubnikov-de Haas spectrum the quantum mobilities associated with individual minibands were estimated for each sample. The sheet density of Si atoms in each doping plane was fixed at approximately 2.5 × 10¹² cm^?2 in all samples and the doping period was varied in the range 40–1000 Å. The quantum mobilities obtained experimentally are compared with theoretical calculations using the random phase approximation to describe the screened interaction between electrons and charged impurities. The theory describes qualitatively the results of the experiment, i.e. an increase of the quantum mobility with the index of the miniband, and a decrease in the mobility in all minibands when the doping period is made shorter (with a weak maximum at intermediate values of the doping period). Various possible improvements of the model are suggested.