Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions

Ge+ ions are implanted into fused silica glass at room temperature and a fluence of 1×10 17 cm-2 . The as-implanted samples are annealed in O2, N2 and Ar atmospheres separately. Ge0 , GeO and GeO2 coexist in the as-implanted and annealed samples. Annealing in different atmospheres at 600℃ leads each composite to change its content. After annealing at 1000℃, there remains some amount of Ge 0 in the substrates. However, the content of Ge decreases due to out-diffusion. After annealing in N2 , Si–N composite is formed. The absorption peak of GeO appears at 240 nm after annealing in O2 atmosphere, and a new absorption peak occurs at 418 nm after annealing in N2 atmosphere, which is attributed to the Si–N composite. There is no absorption peak appearing after annealing in Ar atmosphere. Transmission electron microscopic images confirm the formation of Ge nanoparticles in the as-implanted sample and GeO 2 nanoparticles in the annealed sample. In the present study, the GeO content and the GeO2 content depend on annealing temperature and atmosphere. Three photoluminescence emission band peaks at 290, 385 and 415 nm appear after ion implantation and they become strong with the increase of annealing temperature below 700℃, and their photoluminescences recover to the values of as-grown samples after annealing at 700℃. Optical absorption and photoluminescence depend on the annealing temperature and atmosphere.     

Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films

HfO₂ is one of the most important high refractive index materials for depositing high power optical mirrors. In this research, HfO₂ thin films were prepared by dual-ion beam reactive sputtering method, and the laser-induced damage thresholds (LIDT) of the sample were measured in 1-on-1 mode for laser with 1064 nm wavelength. The results indicate that the LIDT of the as-grown sample is only 3.96 J/cm², but it is increased to 8.98 J/cm² after annealing under temperature of 200 °C in atmosphere. By measuring the laser weak absorption and SIMS of the samples, we deduced that substoichiometer is the main reason for the low LIDT of the as-grown sample, and the experiment results were well explained with the theory of electronic-avalanche ionization.     

Effect of annealing on structural and optical properties of lead tungstate microcrystals

Shuttle-like lead tungstate (PbWO₄) microcrystals are synthesized at room temperature using the precipitation method with the cetyltrimethyl ammonium bromide. Results from both the X-ray diffraction and the scanning electron microscopy show that the lattice distortions of the PbWO₄ microcrystals are reduced significantly when the annealing temperature is increased to 873 K. The result from the ultraviolet-visible diffuse reflectance spectroscopy shows that the exciton absorption appears in the sample annealed at 673 K. The self-trapped exciton luminescence due to the Jahn-Teller effect is also observed in the blue band. The interstitial oxygen ions in the WO₄^2- groups are mainly resposible for the enhancement effect of the green luminescence of the annealed samples. The above results are supported by the spectrum analysis of the as-grown and the post-annealed samples using the X-ray photoelectron spectroscopy.     

Magnetoresistance and magnetostriction of Co2Cr0.6Fe0.4Al Heusler alloy

We report a study of the magnetotransport properties of the Co₂Cr_0.6Fe_0.4Al Heusler alloy grown by means of the arc-melting technique. X-ray diffraction and energy dispersive X-ray spectroscopy have been used to analyze the crystallographic structure and the sample stoichiometry. Temperature-dependent magnetization measurements have been carried out in the range 300-850 K. Co₂Cr_0.6Fe_0.4Al is theoretically predicted to have full positive spin polarization at the Fermi level, and as a consequence its spin-dependent transport properties are being intensively studied. Low field magnetoresistance exceeding 30% has been observed very recently in Co₂Cr_0.6Fe_0.4Al compact pellets. We have performed magnetoresistance and magnetostriction measurements in both the as-grown alloy and compact pellets made of mechanically milled Co₂Cr_0.6Fe_0.4Al. The as-grown and the milled sample show negligible anisotropic magnetostriction (25 μst at saturation), whilst only the milled sample exhibits magnetoresistance (0.65% at 300 K). These results permit us to discard the magnetostrictive effects as the magnetoresistance source.     

Investigation of the effect of annealing on the magnetic properties of Sn1−xEuxTe single crystals

A study of the effect of annealing on the magnetic properties of single crystals Sn_1−xEu_xTe is reported. The width of the electron paramagnetic resonance line of the crystal is found to decrease upon annealing but its g-value of 1.991 is nearly unaffected. Magnetization results indicate that the pair exchange interaction is weakly antiferromagnetic with a value of −0.67 K for the non-annealed sample and −0.29 K after annealed sample. Susceptibility measurements performed as a function of temperature also indicate the presence of EuTe clusters in the as-grown Sn_1−xEu_xTe crystals. Therefore it was deduced that the Eu²⁺ ions tend to form clusters, particularly pairs, in the as-grown crystal and these clusters disappear after annealing, as the Eu²⁺ ions occupy isolated sites in the SnTe host lattice.     

Photoluminescence of polycrystalline CuIn0.5Ga0.5Te2 thin films grown by flash evaporation

Polycrystalline CuIn_0.5Ga_0.5Te₂ films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz. The as-obtained films were characterized by X – ray diffraction (XRD), transmission electron microscopy (TEM) combined with energy dispersive spectroscopy (EDS). XRD and TEM results showed that the layer has a chalcopyrite-type structure, predominantly oriented along (112) planes, with lattice parameters a?=?0.61?nm and c?=?1.22?nm. The optical properties in the near - infrared and visible range 600–2400?nm have been studied. The analysis of absorption coefficient yielded an energy gap value of 1.27?eV. Photoluminescence analysis of as-grown sample shows two main emission peaks located at 0.87 and 1.19?eV at 4?K.     

退火对Mn和N共掺杂的Zn0.88Mn0.12O:N薄膜特性的影响

以NH₃为掺N源,采用电子束反应蒸发技术生长了Mn和N共掺杂的Zn_1-xMn_xO:N薄膜,生长温度为300℃,然后在O₂气氛中400℃退火0.5 h.X射线衍射测量表明,Zn_0.88Mn_0.12O(Mn掺杂)薄膜或Zn_0.88Mn_0.12O:N(Mn和N共掺杂)薄膜仍具有单一晶相纤锌矿结构,未检测到杂质相 关键词： ZnO薄膜 Mn和N共掺杂 电学特性 磁特性     

Fabrication and optical properties of SnS thin films by SILAR method

Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20 μm thickness were grown on glass and ITO substrates by SILAR method using SnSO₄ and Na₂S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV-vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825 nm (near band edge emission) dominated the photoluminescence spectra.     

Characteristics of a type-II n-MoS2/p-Ge van der Waals heterojunction

A few-atomic-layer molybdenum disulfide (MoS₂) film on Si/SiO₂ substrates grown by metal-organic chemical vapor deposition was investigated. The few-atomic-layer MoS₂ film was subsequently transferred onto a (100) p-Ge substrate to build a van der Waals n-p heterojunction. The as-grown few-atomic-layer MoS₂ film and the MoS₂/Ge heterostructure were characterized atomic force microscopy, spectroscopic ellipsometry, high-resolution scanning transmission electron microscopy, Raman spectroscopy analyses, photoluminescence (PL) measurements at room temperature (RT, 300 K), and type-II band alignment of the heterostructure determined by ultraviolet photoelectron spectroscopy. The RT-PL measurements showed dominant peaks at 1.96 and 1.8 eV for the as-grown MoS₂ and red-shifted PL peaks for that transferred onto Ge. We examined the electrical characteristics of the few-atomic-layer MoS₂ by forming a type-II band alignment van der Waals heterojunction with a highly doped p-Ge. The heterojunction solar cell exhibited an open-circuit voltage of 0.15 V and a short-circuit current density of 45.26 μA/cm². The external quantum efficiency measurements showed a spectral response up to approximately 500 nm owing to the absorption by the few-atomic-layer MoS₂ film.     

Thermal stability of HfO2 nanotube arrays

Thermal stability of highly ordered hafnium oxide (HfO₂) nanotube arrays prepared through an electrochemical anodization method in the presence of ammonium fluoride is investigated in a temperature range of room temperature to 900 °C in flowing argon atmosphere. The formation of the HfO₂ nanotube arrays was monitored by current density transient characteristics during anodization of hafnium metal foil. Morphologies of the as-grown and post-annealed HfO₂ nanotube arrays were analyzed by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Although monoclinic HfO₂ is thermally stable up to 2000 K in bulk, the morphology of HfO₂ nanotube arrays degraded at 900 °C. A detailed X-ray photoelectron spectroscopy (XPS) study revealed that the thermal treatment significantly impacted the composition and the chemical environment of the core elements (Hf and O), as well as F content coming from the electrolyte. Possible reasons for the degradation of the nanotube at high temperature were discussed based on XPS study and possible future improvements have also been suggested. Moreover, dielectric measurements were carried out on both the as-grown amorphous film and 500 °C post-annealed crystalline film. This study will help us to understand the temperature impact on the morphology of nanotube arrays, which is important to its further applications at elevated temperatures.     

Effect of ZnS layers on optical properties of prepared CdS/TiO<Subscript>2</Subscript> nanotube arrays for photocatalyst

The TiO₂ nanotube arrays (TiO₂ NTAs) prepared by re-oxidation were chosen as basement. The NTAs prepared through re-oxidation show smoother surface and more uniform tube mouth on large scale compared with the first as-grown one. We use successive ionic layer adsorption and reaction method to deposit quantum dots (ZnS and CdS) onto the sample successively. The findings reveal that two kinds of quantum dots (～10 nm) distribute regularly and the nanotube mouth is open. From the UV–Vis absorption spectrum of samples, the red shift occurs after the sedimentation of the two quantum dots, which proves that the double modification can expand the absorption to 650 nm. Among all specimens, the sample produced by co-deposition has the highest speed of catalytic efficiency of 90.7% compared with bare TiO₂ NTAs (52.9%) and just CdS QDs sensitized sample (65.8%). In the test of photocatalysis durability, the decay percentages of CdS/TiO₂ NTAs and ZnS/CdS/TiO₂ NTAs were 35.8 and 48.4%, respectively, which means that the ZnS passivation layer plays a crucial role in enhancing photocatalytic activities.     

Successive chemical solution deposition of ZnO films on flexible steel substrate: structure, photoluminescence and optical transitions

Zinc oxide is an attractive optoelectronic material with wide applications. Thin ZnO films were prepared on steel foil by successive chemical solution deposition (SCSD). The film structure, room-temperature photoluminescence (PL) and optical absorption characteristics were investigated. This study revealed that films of high structural and optical quality can be prepared by the SCSD method. PL of as-grown films shows a weak green peak at 560 nm and a strong UV peak at 380 nm. Annealing in either air or argon suppresses the green peak and red shifts the UV emission towards 390 nm. The presence of chlorine in the deposition solution destroys the PL of as-grown films. A strong UV emission, however, develops after annealing the films in air. Several optical transitions measured from the film PL and optical absorption coefficients are shown to be related to transitions through the known defect levels in ZnO, such as E₁, L₁, E₃ and V_O ²⁺ levels. PACS 81.16.Be; 81.05.Dz; 78.55.Et; 78.66.Hf; 68.55.Jk     

Photoelectric properties of an electrolyte contact with a CuInSe2 thin film

We have studied the photoelectric properties of the potential barrier which arises at the interface between an electrolyte and thin n-CuInSe₂ films deposited on glass by vacuum evaporation. Photoelectrochemical cells were used to observe the rectification and photosensitivity near the fundamental absorption of CuInSe₂ for photon energies >1 eV. It was found that there is a correspondence between the spectral dependence of the absorption and the photosensitivity of the cells, which indicates a constant quantum efficiency for the photoconversion process. We conclude with a discussion of the practical application of the potential barriers studied.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 24–26, February, 1992.     

Investigation of structural and optical properties of nanoporous GaN film

The structural and optical characteristics of porous GaN prepared by Pt-assisted electroless etching under different etching durations are reported. The porous GaN samples were investigated by scanning electron microscopy (SEM), high-resolution X-ray diffraction (HR-XRD), photoluminescence (PL) and Raman scattering. SEM images indicated that the density of the pores increased with the etching duration; however, the etching duration has no significant effect on the size and shape of the pores. XRD measurements showed that the (0 0 0 2) diffraction plane peak width of porous samples was slightly broader than the as-grown sample, and it increased with the etching duration. PL measurements revealed that the near band edge peak of all the porous samples were red-shifted; however, the porosity-induced PL intensity enhancement was only observed in the porous samples; apart from that, two additional strain-induced structural defect-related PL peaks observed in as-grown sample were absent in porous samples. Raman spectra showed that the shift of E₂ (high) to lower frequency was only found in samples with high density of pores. On the contrary, the absence of two forbidden TO modes in the as-grown sample was observed in some of porous samples.     

The nature of excitonic complexes in ZnTe

Uniaxial stress experiments were used to investigate the nature of the luminescence lines observed at low temperatures in ZnTe in the vicinity of the absorption edge. The single crystals used in this experiment were grown from solution of ZnTe in tellurium. Both “as-grown” crystals and crystals annealed in Zn vapour were investigated. The most intense line in “as-grown” crystals is attributed to an exciton bound to a neutral acceptor. The binding energy of the exciton in this center is 6 meV. After annealing a new center appears in the same spectral region. Stress experiments as well as the temperature dependence of the intensity of the luminescence indicate that this center is a complex consisting of an exciton and an ionized donor. Splitting of J = 1 (Γ₅) and J = 2 (Γ₃ + Γ₄) levels was found to be 1.2 meV.     

OBSERVATION OF PHOTOREFRACTIVE EFFECT OF KNbO3 CRYSTAL AT μW ILLUMINATION

The photorefractive effects of the as-grown and proton-implanted KNbO₃ crystals were studied by two-wave mixing at 62.2μW/cm² illumination. At this pump power level, the as-grown crystal showed little photorefractive effect, while the proton-implanted crystal showed an obvious effect. Furthermore, there seemed to exist two photorefractive gratings with response times of 22.54 and 1596.30s, at 62.2μW/cm² pump power level, in the proton-implanted sample. This phenomenon has been attributed to the influence of proton-implantation.     

Deposition and characterization of layer-by-layer sputtered AgGaSe2 thin films

Sputtering technique has been used for the deposition of AgGaSe₂ thin films onto soda-lime glass substrates using sequential layer-by-layer deposition of GaSe and Ag thin films. The analysis of energy dispersive analysis of X-ray (EDXA) indicated a Ga-rich composition for as-grown samples and there was a pronounce effect of post-annealing on chemical composition of AgGaSe₂ thin film. X-ray diffraction (XRD) measurements revealed that Ag metallic phase exists in the amorphous AgGaSe₂ structure up to annealing temperature 450 °C and then the structure turned to the single phase AgGaSe₂ with the preferred orientation along (1 1 2) direction with the annealing temperature at 600 °C. The surface morphology of the samples was analyzed by scanning electron microscopy (SEM) measurements. The structural parameters related to chalcopyrite compounds have been calculated. Optical properties of AgGaSe₂ thin films were studied by carrying out transmittance and reflectance measurements in the wavelength range of 325-1100 nm at room temperature. The absorption coefficient and the band gap values for as-grown and annealed samples were evaluated as 1.55 and 1.77 eV, respectively. The crystal-field and spin-orbit splitting levels were resolved. These levels (2.03 and 2.30 eV) were also detected from the photoresponse measurements almost at the same energy values. As a result of the temperature dependent resistivity and mobility measurements in the temperature range of 100-430 K, it was found that the decrease in mobility and the increase in carrier concentration following to the increasing annealing temperature attributed to the structural defects (tetragonal distortion, vacancies and interstitials).     

Spectroscopic studies on vanadyl ion in rubidium magnesium sulphate hexahydrate

The optical absorption spectrum of VO²⁺ ion in a single crystal of Rb₂Mg(SO₄)₂6H₂O has been investigated both at laboratory and liquid nitrogen temperatures. The electron paramagnetic resonance (EPR) spectrum of the polycrystalline sample has also been investigated at the laboratory temperature. Both optical absorption and EPR spectra are characteristic of the VO²⁺ ion in tetragonal symmetry. Molecular orbital coefficients have been evaluated by correlating the optical absorption and EPR data.     

前驱体和退火温度对Nd2O3薄膜组分影响的定量研究

采用Nd(thd)₃和O₃作为反应前驱体, 利用先进的原子层淀积方法在P型硅(100)衬底上制备了超薄Nd₂O₃介质膜, 并在N₂气氛下进行了退火处理. 采用X射线光电子能谱仪对薄膜样品组分进行分析. 研究结果表明, 淀积过程中将前驱体温度从175 ℃提高到185 ℃后, 薄膜的质量得到提高, O/Nd 原子比达到1.82, 更接近理想的化学计量比, 介电常数也从6.85升高到10.32.     

Unusual magnetic behaviors and electrical properties of Nd-doped BiFeO3 nanoparticles calcined at different temperatures

In the present work, we have investigated the effect of deposition time on the morphological, structural, and photoluminescence (PL) properties of β-Ga₂O₃ NWs grown by CVD technique. The diameter and length of the as-grown NWs varied for the deposition time of 1–4 h, from 50 to 100 nm and 5–15 μm, respectively. The crystalline quality of the NWs improved with increasing the deposition time. The detailed transmission electron microscopy (TEM) and fast Fourier Transformation (FFT) measurements revealed that the as-grown β-Ga₂O₃ NWs were single crystalline. Furthermore, we have studied the variation of PL spectra of the NWs with deposition time and provided an energy band diagram to give a plausible explanation of the origin of different emissions in the PL spectra. The PL spectra showed a broad strong UV-blue emission band and a weak red emission for 1 h deposited sample. We suggested that the UV and red emission from β-Ga₂O₃ NWs are related to oxygen vacancies and impurities such as nitrogen, respectively. It was observed that the intensity of UV emission decreased with deposition time and this reduction was attributed primarily to the reduction of oxygen vacancies in the NWs.