Characterization of a surface state on TiN(001)

A surface state seen in normal photoemission from TiN(001), at - 2.9 eV relative to the Fermi energy, is associated with the Δ₅ band in the bulk band structure consisting of N p_x/p_y orbitals. As TiN is somewhat ionic, there is a change in the electrostatic potential at the surface and this is large enough to pull a Tamm surface state off the Δ₅ band.     

Phase diagram of electron systems near the superconductor-insulator transition

The zero temperature phase diagram of Cooper pairs exposed to disorder and a magnetic field is determined theoretically from a variational approach. Four distinct phases are found: a Bose and a Fermi insulating, a metallic, and a superconducting phase, respectively. The results explain the giant negative magnetoresistance found experimentally in In-O, TiN, Be and high-T(c) materials.     

Passivation of GaAs surface by atomic-layer-deposited titanium nitride

The suitability of titanium nitride (TiN) for GaAs surface passivation and protection is investigated. A 2-6-nm thick TiN passivation layer is deposited by atomic layer deposition (ALD) at 275 ° C on top of InGaAs/GaAs near surface quantum well (NSQW) structures to study the surface passivation. X-ray reflectivity measurements are used to determine the physical properties of the passivation layer. TiN passivation does not affect the surface morphology of the samples, but increases significantly the photoluminescence intensity and carrier lifetime of the NSQWs, and also provides long-term protection of the sample surface. This study shows that ALD TiN coating is a promising low-temperature method for ex situ GaAs surface passivation.     

多弧离子镀TiN与不同金属基材间的接触界面与表面特性

用多弧离子镀技术在不同金属基材上进行TiN镀膜实验 ,制备了TiN/Fe、TiN/Cu和TiN/Cr/Cu复合膜 .借助扫描电子显微镜 (SEM)、X射线衍射仪 (XRD)和光电子能谱 (XPS) ,研究了TiN与Fe、Cu和Cr/Cu三种不同衬底接触界面的形貌、结构及其表面特性 .SEM观察发现 ,在一定离子镀膜条件下 ,TiN涂层可与Fe、Cu和Cr/Cu金属基材形成均匀平整的接触界面 ,在铜基上TiN界面清晰 ,在Fe与Cr/Cu界面有明显的层状晶界微结晶分布 .XRD分析显示 ,Fe、Cu和Cr/Cu表面生成的薄膜都包含TiN、Ti2 N等多晶相 ,在Cr/Cu界面还包含Ti-Cr的金属间化合物 .XPS结果表明 ,表面除了TiN膜外 ,还生成TiO2 和TiOxNy 等氧化膜 .Ar+ 刻蚀 5min后 ,TiO2 消失 ,TiOxNy 减少 ,TiN则呈增加趋势 .TiN与Cr/Cu界面形成明显的Ti-Cr和Cr-Ni互扩散层 ,这有助于增强薄膜附着力 ,形成较牢固的TiN涂层 .     

Condensation Surface Temperature as a Means for Studying Film Formation Mechanisms

A rise in the condensation surface temperature during film growth is a result of energy dissipation on the condensation surface. An example of energy dissipation is the dissipation of chemical reaction heat, which releases during film deposition by reactive magnetron sputtering. The monitoring of the surface temperature during TiN film deposition by reactive (Ti–in–N₂) and nonreactive (TiN–in–Ar or TiN–in–N₂) sputtering methods has shown that this temperature is higher in the reactive case and decreases in the (TiN–in–Ar)–(TiN–in–N₂) sequence of nonreactive sputtering modifications. It has been found that the composition and crystal structure of TiN films do not depend on the growth method and are identical to those of bulk titanium nitride. Based on these results, a formation mechanism of films obtained by the above methods has been suggested. In the case of reactive sputtering, the film was supposed to grow on the condensation surface through a reaction between titanium and nitrogen atoms. In the cases of nonreactive sputtering, the film forms from TiN molecules.     

多弧离子镀工艺对TiN/Ti与Cr/Cu界面及微结构的影响

用多弧离子镀技术在铜基上电镀Cr/Ni层进行不同工艺条件下多弧离子沉积TiN/Ti实验.借助X射线衍射(XRD)和扫描电子显微镜(SEM)研究了TiN/Ti与Cr/Cu接触界面形成、微结构及其组分与形貌.XRD分析显示,薄膜表面组分包含TiN,Ti₂N多晶相外,还包含一些Cr-Ti的金属间化合物等.显然,TiN,Ti₂N在表面上已形成.SEM观察指出,在90℃制备的表面膜具有不平整的类枝状结晶结构.随着温度升高至170℃,得到精细TiN/Ti覆盖层表面,XRD峰 关键词： 多弧离子镀 氮化钛 界面形成 微结构     

Au/TiN复合薄膜制备及其表面增强拉曼光谱研究

表面增强拉曼散射光谱(SERS)已用于环境监测、生物医药、食品卫生等领域,而高活性SERS基底是表面增强拉曼散射光谱技术应用的关键。TiN作为新型等离子材料具有较强的SERS性能,同时化学稳定性及生物相容性较好,但其SERS性能不如贵金属金强。该研究采用氨气还原氮化法和电化学沉积法,在TiN薄膜表面沉积贵金属Au纳米颗粒制备出Au/TiN复合薄膜。在Au/TiN复合薄膜中单质Au和TiN两种物相共存;随着电化学沉积时间延长,TiN薄膜表面单质金纳米颗粒数量逐渐增多,金纳米颗粒尺寸增大,颗粒间距减小。由于金与TiN两者的本征表面等离子共振耦合作用,Au/TiN复合薄膜的共振吸收峰发生了偏移。利用罗丹明6G为拉曼探针分子,对Au/TiN复合薄膜进行SERS性能分析,发现Au/TiN复合薄膜上的R6G探针分子的拉曼峰信号强度随沉积时间延长呈现先增大后减小的规律;当电化学沉积时间为5 min时,R6G拉曼信号峰较高,复合薄膜样品的SERS活性最大。将Au/TiN复合薄膜和Au薄膜分别浸泡在10-3,10-5,10-7,10-8及10-9 mol·L-1 R6G溶液5 min,进行检测限分析,发现Au/TiN复合薄膜检测极限达10-8 mol·L-1,增强因子达到8.82×105,与Au薄膜和TiN薄膜相比,Au/TiN复合薄膜上对R6G探针分子SERS活性最高。这得益于Au/TiN复合膜中表面等离子体产生的耦合效应,使得局域电磁场强度增强,从而引起R6G探针分子拉曼信号增强。通过2D-FDTD模拟电场分布发现Au/TiN,Au及TiN薄膜具有电场增强作用,其中Au/TiN复合薄膜的增强作用尤为显著,这也证实了氮化钛与金纳米颗粒之间存在耦合效应。另外发现TiN与Au之间可能存在电荷转移,促进了4-氨基苯硫酚氧化反应,进而证实了TiN与Au薄膜的协同作用。此外,Au/TiN复合薄膜均匀性较好,相对平均偏差仅为7.58%。由此可见,采用电化学沉积制备的Au/TiN复合薄膜具有作为SERS基底材料的应用潜力。     

Quasiparticle dispersion and heat capacity of Na0.3CoO2: a dynamical mean-field theory study

We use the dynamical mean-field theory to calculate the Fermi surface and heat capacity for Na0.3CoO2. We resolve the conflicting outcomes of previous calculations by demonstrating that the nature of the calculated Fermi surface depends sensitively upon the bare Hamiltonian, and, in particular, the crystal-field splitting. By calculating both the Fermi surface and the heat capacity, we show that the only conclusion consistent with angle-resolved photoemission and heat capacity measurements is that the e'g pockets are not present at the Fermi surface.     

Band structure,Fermi surface,and superconducting gap in FeAs-based superconductors revealed by angle-resolved photoemission spectroscopy

In this paper, we present a brief review on our angle-resolved photoemission measurements on the band structure, Fermi surface, and superconducting gap of the newly-discovered FeAs-based high temperature superconductors. (1) The Fermi surface of the FeAs-based compounds are characterized by the hole-like Fermi surface sheets near Γ (0, 0) and the existence of singular Fermi spots near M(π,     

Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy

Electron accumulation states in InN have been measured using high resolution angle-resolved photoemission spectroscopy (ARPES). The electrons in the accumulation layer have been discovered to reside in quantum well states. ARPES was also used to measure the Fermi surface of these quantum well states, as well as their constant binding energy contours below the Fermi level E(F). The energy of the Fermi level and the size of the Fermi surface for these quantum well states could be controlled by varying the method of surface preparation. This is the first unambiguous observation that electrons in the InN accumulation layer are quantized and the first time the Fermi surface associated with such states has been measured.     

Structure of the ground state of a nonsuperfluid dense quark-gluon plasma

The single-particle spectrum and momentum distribution of quasiparticles in a cold dense quark-gluon plasma are calculated within the Fermi liquid approach. It is shown that this system does not behave as a standard Fermi liquid: at zero temperature, the single-particle spectrum has a plateau at the Fermi surface, while the Fermi surface itself has a nonzero volume in momentum space.     

Calculation of the Fermi velocity in tungsten

The anisotropy of the Fermi velocity of tungsten has been calculated for different parts of the Fermi surface. The calculation was carried out by using the LMTO method in which the potential was constructed according to Mattheiss' rule with overlapping, relativistic atomic charge densities. In accordance with the experiments the results show that both magnitude and the anisotropy of the Fermi velocity are highest for the hole octahedron surface. For the other parts of the Fermi surface the value of the Fermi velocity is smaller, and it does not exceed a 50% change as a function of k.     

Fermi surface topology of Ca1.5Sr0.5RuO4 determined by angle-resolved photoelectron spectroscopy

We report angle-resolved photoelectron spectroscopy results of the Fermi surface of Ca1.5Sr0.5RuO4, which is at the boundary of magnetic/orbital instability in the phase diagram of the Ca-substituted Sr ruthenates. Three t(2g) energy bands and the corresponding Fermi surface sheets are observed, which are also present in the Ca-free Sr2RuO4. We find that while the Fermi surface topology of the alpha,beta (d(yz,zx)) sheets remains almost the same in these two materials, the gamma (d(xy)) sheet exhibits a holelike Fermi surface in Ca1.5Sr0.5RuO4 in contrast to being electronlike in Sr2RuO4. Our observation of all three volume conserving Fermi surface sheets clearly demonstrates the absence of orbital-selective Mott transition, which was proposed theoretically to explain the unusual transport and magnetic properties in Ca1.5Sr0.5RuO4.     

Abnormal phenomenon of source-drain current of AlGaN/GaN heterostructure device under UV/visible light irradiation

We report an abnormal phenomenon that the source-drain current (I_D) of AlGaN/GaN heterostructure devices decreases under visible light irradiation. When the incident light wavelength is 390 nm, the photon energy is less than the band gaps of GaN and AlGaN whereas it can causes an increase of I_D. Based on the UV light irradiation, a decrease of I_D can still be observed when turning on the visible light. We speculate that this abnormal phenomenon is related to the surface barrier height, the unionized donor-like surface states below the surface Fermi level and the ionized donor-like surface states above the surface Fermi level. For visible light, its photon energy is less than the surface barrier height of the AlGaN layer. The electrons bound in the donor-like surface states below the Fermi level are excited and trapped by the ionized donor-like surface states between the Fermi level and the conduction band of AlGaN. The electrons trapped in ionized donor-like surface states show a long relaxation time, and the newly ionized donor-like surface states below the surface Fermi level are filled with electrons from the two-dimensional electron gas (2DEG) channel at AlGaN/GaN interface, which causes the decrease of I_D. For the UV light, when its photon energy is larger than the surface barrier height of the AlGaN layer, electrons in the donor-like surface states below the Fermi level are excited to the conduction band and then drift into the 2DEG channel quickly, which cause the increase of I_D.     

Interplay among superconductivity,charge density waves,and magnetism in EuMo6S8

In a one-dimensional metal, the energy of the electrons can always be lowered by opening an energy gap around the Fermi energy (the Peierls instability): all occupied states are then in the lower-energy band, while the higher-energy band is empty. The opening of such a gap requires a structural distortion, resulting in the formation of a charge density wave. In a three-dimensional system, the gapping takes place in the region where the Fermi surface is nested (i.e., large parallel areas of the Fermi surface are spanned by a certain wave vector), giving rise to partial gapping of the Fermi surface, accompanied by a structural distortion. In this case, a charge density wave can coexist with superconductivity. Both charge-density-wave and superconducting transitions involve the formation of an energy gap at the Fermi energy. A charge-density-wave gap is formed at a region of the Fermi surface where there is a high density of electronic states. In such a material, there is also a strong electronphonon interaction. A region with high density of states and a high electron-phonon interaction is just the portion of the Fermi surface that will enhance the superconducting transition temperature, according to the BCS (Bardeen-Cooper-Schrieffer) theory. When a charge-density-wave gap opens up at the Fermi surface these electronic states are no longer available to form Cooper pairs and to enhance the superconducting transition temperature. The opposite is also true; if a superconducting gap opens, the states involved in forming this gap are no longer available to take part in a charge-density-wave transition. It appears that charge density waves and superconductivity compete for the same portion of the Fermi surface and thus inhibit each other. In this paper, we will review a unique situation with respect to the competition between these two ground states and will also discuss how this competition affects the anomalous behavior of critical field in EuMo6S, at high pressure.     

Fermi surface evolution and Luttinger theorem in Na(x)CoO2: a systematic photoemission study

We report a systematic angle-resolved photoemission study on Na(x)CoO2 for a wide range of Na concentrations (0.3 < or = x < or = 0.72). In all the metallic samples at different x, we observed (i) only a single holelike Fermi surface centered around gamma and (ii) its area changes with x according to the Luttinger theorem. We also observed a surface state that exhibits a larger Fermi surface area. The e'(g) band and the associated small Fermi surface pockets near the K points predicted by band calculations are found to sink below the Fermi energy in a manner almost independent of the doping and temperature.     

A surface state on TiN(100); calculated photoemission results

The photoemission spectrum of TiN(100) at normal electron emission has been calculated for two different surface layer potentials. The results do, when compared to experimental data, give strong evidence of a Tamm surface state on TiN(100) induced by a change in the electrostatic potential at the surface.     

Effect of active screen plasma nitriding pretreatment on wear behavior of TiN coating deposited by PACVD technique

Titanium based alloys are used extensively for improving wear properties of different parts due to their high hardness contents. Titanium nitride (TiN) is among these coatings which can be deposited on surface using various techniques such as CVD, PVD and PACVD. Their weak interface with substrate is one major drawback which can increase the total wear in spite of favorite wear behavior of TiN. Disc shaped samples from AISI H13 (DIN 1.2344) steel were prepared in this study. Single TiN coating was deposited on some of them while others have experienced a TiN deposition by active screen plasma nitriding (ASPN). Hardness at the surface and depth of samples was measured through Vickers micro hardness test which revealed 1810 Hv hardness as the maximum values for a dual-layered ASPN–TiN. Pin-on-disc wear test was done in order to study the wear mechanism. In this regard, the wear behavior of samples was investigated against pins from 100Cr6 (Din 1.3505) bearing steel and tungsten carbide–cobalt (WC–Co) steel. It was evidenced that the dual-layer ASPN–TiN coating has shown the least weight loss with the best wearing behavior because of its high hardness values, stable interface and acceptable resistance against peeling during wearing period.     

Fermi surface studies of non-dilute disordered alloys by positron experiments

The technique of positron annihilation experiments as applied to the study of Fermi surfaces in metals and alloys is briefly reviewed. The angular correlation of the two annihilation photons is directly related to the momentum distribution of the positron-electron system; breaks in this distribution reflect the size and shape of the Fermi surface. Recent two-dimensional angular correlation measurements designed to study the Fermi surface of Cu?Al and Cu?Zn alloys are presented, and are compared with theoretical predictions.     

TiN对Co基合金激光熔覆层组织与性能的影响

采用5 kW CO2激光器在低碳钢表面熔覆Co基合金涂层及TiN/Co基合金复合涂层,研究了两种涂层的组织、显微硬度以及滑动磨损性能。结果表明,Co基合金涂层主要组成相为-γCo,-εCo,Cr23C6等,TiN/Co基合金复合涂层组成相为-γCo,-εCo,Cr23C6,TiN和TiC等。Co基合金涂层由发达的-γCo枝晶和其间共晶组织所组成,TiN/Co基合金涂层典型组织为等轴固溶体以及细小的共晶组织。TiN对熔覆层的组织有显著的改善作用,促使其组织细化,树枝晶向等轴晶转化,同时可显著提高Co基合金涂层的显微硬度及耐磨性能。