Exciton spectra in MoSe2

Wavelength-modulated reflectivity spectra have been performed on 2H MoSe₂ at temperatures from 3.1 to 300 K. The A exciton series for which the n = 3 state was observed for the first time is shown to be anomalous with a Rydberg of 109 meV and a reduced effective mass of 0.62m_o. Several additional structures are observed and interpreted as well; in particular, the first two excited states of the B exciton, seen here for the first time, allow the determination of the parameters of that exciton series. No shift in any of the spectral structures was observed in magnetic fields of up to 7.0 T.     

Landau-Level Quantization of the Yellow Excitons in Cuprous Oxide

Lately, the yellow series of P-excitons in cuprous oxide could be resolved up to the principal quantum number n = 25. Adding a magnetic field, leads to additional confinement normal to the field. Thereby, the transition associated with the exciton n is transformed into the transition between the electron and hole Landau levels with quantum number n, once the associated magnetic length becomes smaller than the related exciton Bohr radius. The magnetic field of this transition scales roughly as n^–3. As a consequence of the extended exciton series, we are able to observe Landau level transitions with unprecedented high quantum numbers of more than 75.     

Exciton absorption parameters in TlGaS2 crystals

It is shown that, because the shape of the exciton absorption curve in crystalline TlGaS₂ is described by the Fano antiresonance profile, the experimentally observed exciton peak corresponds to a modified state which is the result of the configuration interaction of a discrete state (exciton) with the quasi-continuum of conduction-band states. The oscillator strength for the transition to the discrete (“pure”) exciton state is calculated as F ₀=1.22×10^?2. The exciton transition selection rules are calculated for two assumed symmetry groups, D _2h and D _4h . An analysis of the selection rules for the dipole-allowed exciton transition permits one to conclude that the symmetry group for the TlGaS₂ crystal is D _2h .     

Exciton-phonon interaction in mixed silver halides: Resonant Raman scattering vs photoluminescence

An investigation of resonant Raman scattering in mixed crystals of AgBr:Cl at 1.8 K shows that the zero-phonon and LO phonon-assisted exciton luminescence excited in the free indirect exciton absorption, exhibits an anomalous dependence on the exciton photon energy E_L. Close to the exciton gap, the bands show a Raman-like behaviour with their peaks at constant energetic distance from E_L. As E_L is tuned further into the absorption, the bands gradually develop into normal photoluminescence. The effect is explained by taking into account exciton relaxation via scattering by long-wavelength acoustic phonons, a process which is strongly energy dependent. In addition, resonant Raman scattering observed for excitation in the zero-phonon absorption suggests study for the first time of the mode behaviour of certain off-zone center phonons in this system.     

Exciton-plasma transition in GaAs

In this work, we study the stability of excitons at high density, i.e. we calculate the reduction of the exciton binding energy due to exciton-exciton interactions in a high-density exciton gas. We derive first the effective electron-hole interaction in the presence of free carriers and excitons. We use the static approximation. The exciton binding energy is calculated by the variational technique. The computations are specialized to GaAs. We investigate the critical density when the exciton binding disappears, which corresponds to the exciton plasma transition. We conclude that this transition occurs at higher density than the reverse plasma exciton transition, determined by the standard criteria a₀q_D =1.19 [Rogers F. J., Graboske H. C., Jr. and Harword D. J., Phys. Rev.A1, 1577 (1970)].     

Exciton binding energy in GaAs quantum wells deduced from magneto-optical absorption measurement

Magneto-optical absorption spectra due to exciton states and Landau-levels were measured in GaAs/AlAs multi-quantum-wells. By extrapolating the photon energies of the absorption peaks to zero magnetic field, the lowest state (1S) heavy hole exciton binding energy, E^B_$\text{h}$(1S), was obtained as a function of well size L_z in the range $\text{58}\text{A}\text{?}\text{?}\text{L}{}_{\mathrm{z}}\text{?252}\text{A}\text{?}$. The L_z dependence of E^B_h showed the change of the exciton character from three-dimensional to two-dimensional with decreasing L_z. The diamagnetic shift observed for the heavy hole exciton peak was larger than that for the light hole exciton peak, showing the anisotropic nature of the Luttinger-Kohn Hamiltonian. The diamagnetic shift of the heavy hole exciton peak became smaller as L_z was decreased, suggesting the enhancement of the two-dimensional exciton character.     

Features of the absorption spectra of thin films of M 2Ag1 − x CuxI3 solid solutions (M = Rb, Cs)

The absorption spectra of thin films of (MI)_{1 ? y} (Ag_{1 ? x} Cu_xI)_y solid solutions (M = Rb, Cs) with the initial molar concentration y = 0.33 have been investigated. It is established that, at low concentrations x, a local exciton band due to Cu⁺ ions is split off from the main long-wavelength exciton bands. In Rb₂Ag_{1 ? x} Cu_xI₃ solutions, the concentration shift of exciton bands indicates the formation of a persistent-type exciton spectrum. However, in Rb₂Ag_{1 ? x} Cu_xI₃ with x ≥ 0.5 and in Cs₂Ag_{1 ? x} Cu_xI₃ with x > 0.2, exciton spectra of amalgamation type are observed, which are related to the formation of more stable M ₃Ag_{2 ? 2x} Cu_2x I₅ solid solutions. The formation of these solutions leads to broadening of the exciton bands and to the concentration transition from persistent-to amalgamation-type exciton spectra.     

Excitons in monoclinic zinc diphosphide: Orthoexciton and polariton effects at n=1 resonance

Quantitative investigations of the hydrogen-like exciton B series in the absorption spectra of the β-ZnP₂ crystal for various wave vector directions and polarization states of radiation are conducted. It is shown that the B spectrum constitutes a single orthoexciton series with S-type envelope functions, and low-energy components in doublet lines belong to the S-type for lines in the series with n≥3. Polariton effects are clearly manifested at the B _n=1 exciton resonance, and Bouguer’s law is violated. The oscillator strength tensor components are determined for transitions to the exciton states of the B series, and the polariton parameters at the B _n=1 exciton resonance are calculated.     

The interference of additional waves of forbidden polaritons excited by allowed polaritons in CuGaS2

Additional waves of exciton polaritons are studied in thin (1.5–1.8 μm) CuGaS₂ crystals at 9 K. The reflectivity spectra show a fine structure related to the interference of Fabry–Perot and additional waves which is a consequence of the polariton spatial dispersion. The main parameters of the exciton polaritons were determined from the spectra calculations. The Γ₄ excitons of big oscillator strength are shown to excite the additional polariton waves of the Γ₅ excitons of small oscillator strength, which interfere determining the fine structure in exciton resonance optical spectra.     

Shallow acceptor bound exciton and free exciton states in high-purity zinc telluride

We investigated excitons bound to shallow acceptors in high-purity ZnTe and measured excitation spectra of two-hole luminescence lines at 1.6 K using a tunable dye-laser. The electron-hole coupling in the bound exciton (BE) states appears to be very different for the various acceptors even for almost identical exciton localisation energies. Three different types of BE are reported. For the Li-acceptor BE we observe three sub-components separated by 0.22 and 0.17 meV and interpreted as J = $\text{1}\text{2}$, $\text{3}\text{2}$, $\text{5}\text{2}$ states. The Ag-acceptor BE exhibits a strong ground state and a weak excited state at 1.3 meV higher energy. For the as yet unidentified k-acceptor we observe a single BE level, degenerate with the Ag-acceptor BE ground state. Dips in the excitation spectra due to absorption into free exciton 1S, 2S, and 3S states yield an exciton Rydberg R₀ = 12.8±0.3 meV and a free exciton binding energy FE(1S) = 13.2±0.3 meV.     

Magneto-reflectance of the 1S exciton ground states in InP and GaAs

The reflectance due to the 1S exciton of InP and GaAs is studied in magnetic fields up to 12 T in the Faraday and Voigt configurations. Electron-hole exchange interaction is taken into account in a perturbation model on degenerate exciton states in cubic crystals to explain the splitting and the field dependence of the oscillator strengths of the J = 1 and J = 2 exciton states. Electron and hole g-values are estimated.     

Dynamics of the phase transitions in the system of nonequilibrium charge carriers in quantum-dimensional Si1 − x Ge x /Si structures

The dynamics of the phase transition from an electron-hole plasma to an exciton gas is studied during pulsed excitation of heterostructures with Si_{1 ? x} Ge _x /Si quantum wells. The scenario of the phase transition is shown to depend radically on the germanium content in the Si_{1 ? x} Ge _x layer. The electron-hole system decomposes into a rarefied exciton and a dense plasma phases for quantum wells with a germanium content x = 3.5% in the time range 100–500 ns after an excitation pulse. In this case, the electron-hole plasma existing in quantum wells has all signs of an electron-hole liquid. A qualitatively different picture of the phase transition is observed for quantum wells with x = 9.5%, where no separation into phases with different electronic spectra is detected. The carrier recombination in the electron-hole plasma leads a gradual weakening of screening and the appearance of exciton states. For a germanium content of 5–7%, the scenario of the phase transition is complex: 20–250 ns after an excitation pulse, the properties of the electron-hole system are described in terms of a homogeneous electron-hole plasma, whereas its separation into an electron-hole liquid and an exciton gas is detected after 350 ns. It is shown that, for the electron-hole liquid to exist in quantum wells with x = 5–7% Ge, the exciton gas should have a substantially higher density than in quantum wells with x = 3.5% Ge. This finding agrees with a decrease in the depth of the local minimum of the electron-hole plasma energy with increasing germanium concentration in the SiGe layer. An increase in the density of the exciton gas coexisting with the electron-hole liquid is shown to enhance the role of multiparticle states, which are likely to be represented by trions T ⁺ and biexcitons, in the exciton gas.     

非对称方势阱中的激子及其与声子的相互作用

采用类LLP(Lee-Low-Pines)变换和分数维变分法,在讨论有限深非对称方势阱Ga_1－xAl_xAs/ GaAs/Ga_0.7Al_0.3As的分数维基础上,计算了其中激子的基态能量以及声子对其影响,随着势阱宽度增加,激子能量先减小后增大,出现一个最小值.讨论了一侧势垒高度变化对分数维、激子基态能量的影响,并发现声子作用使得激子能量明显增大.另外,非对称方势阱中的激子结合能随阱宽的减小而增     

Oxygen-phase-state changes in ZnS single crystals annealed in vapors of the constituents

Exciton reflection and emission spectra and edge emission have been investigated in ZnS sinle crystals grown from the melt and containing oxygen and then subjected to annealing in vapors of the constituents. The study of optical properties of the crystals cooled to 77°K were conducted in parallel with structural investigations of the crystals using proton and x-ray diffraction analyses. Based on the experimental data it was concluded that in the ZnS lattice, oxygen exists in a number of phase states: as part of a ZnS·O solid solution in the host lattice; as a precipitate from the saturated solid solutionβ=ZnS·O_sat; as an impurity atmosphere in the vicinity of packing faults; as ZnO precipitated on dislocations. The effect of oxygen in these various phase states on the exciton spectra and edge emission of ZnS was investigated. It was shown that oxygen is not very mobile in ZnS crystals annealed in sulfur vapor and it becomes concentrated mainly at packing defects. This leads to an increase in the concentration of packing defects and makes possible a transition from the cubic to the hexagonal modification of ZnS. The concentration of oxygen at packing defects leads to the appearance in reflection spectra and in the edge emission spectra ofα-ZnS of an additional hexagonal band located on the long wavelength side which is caused by the formation ofβ-ZnS·O solid solution. Oxygen diffuses quite rapidly through ZnS which has been annealed in zinc vapor and it precipitates from the crystals as the distinct phases ZnO orβ-ZnS · O_sat, and as a result the defect content of the hostα-ZnS lattice decreases. The concentration of the ZnO-phase is quite small and its exciton bands do not appear in the reflection spectra. The precipitation of the solid solution in the form of the phaseβ-ZnS · O_sat leads to the appearance of an additional long wavelength absorption edge in the 334 to 335 nm region (at 77°K). In addition, because single crystals of ZnS annealed in zinc vapor contain a large concentration of sulfur vacancies, there occurs a rather rapid formation of the solid solution on the layers ofα-ZnS close to the surface; this leads to a broadening and a shift toward longer wavelengths of the sphalerite exciton spectra. A similar shift is observed for the edge emission band ofα-ZnS. When the crystals are aged, theα-ZnS·O solid solution decomposes and the bands assume the standard sphalerite positions. Changes in the intensity of edge and exciton emission were investigated taking into account changes in the phase state of oxygen in the crystals.     

Time-evolution of isospin mixing in the unified exciton model

The unified exciton model, based on a master-equation approach, is extended to describe also the coupling between exciton states of different isospin. This allows the determination of the time evolution of the isospin mixing coefficient μ²(t). The equilibration of the excited nucleus, both in exciton number and isospin space, is discussed. It is shown that the nucleus essentially decays before full equilibrium is established.     

Size dependence of ground-state energy of the excitons in spherical Y2O3

The exciton energies of rare earth oxides (Ln₂O₃) have rarely been calculated by the theory. Experimentally, the blue-shift of exciton energy in nanocrystals deviates from the traditional size confinement effect. Herein, the dependence of the ground-state energy of an exciton in Y₂O₃ spheres on particle radius was calculated by using a variational method. In the model, an exciton confined in a sphere surrounded by a dielectric continuum shell was considered. The ground-state energy of exciton comprises kinetic energy, coulomb energy, polarization energy and exciton–phonon interaction energy. The kinetic and coulomb energy were considered by the effective mass and the dielectric continuum and the exciton–phonon interaction energy was given by the intermediate coupling method. The numerical results demonstrate that the present model is roughly consistent with the experimental results. The confinement effect of the kinetic energy is dominant of the blue-shift of the exciton energy in the region of R < 5 nm, while confinement effect of the coulomb energy is dominant of the blue-shift of the exciton energy in the region of R > 5 nm. The polarization energy contributes largely to the exciton energy as the particle size is smaller than ~ 10 nm, while the exciton–phonon interaction energy takes only a little contribution in all the range.     

Pool-Frenkel thermoelectric modulation of exciton photoluminescence in GaSe crystals

Effect of external field on the exciton photoluminescence of GaSe crystals has been investigated and it has been observed that the PL is quenched with the applied field. The changes observed in the PL spectra have been analyzed with impact exciton, Franz-Keldysh and Pool-Frenkel effects. From the analyses of the experimental data, it has been found that the intensity of direct free, indirect free and bound exciton peaks decreased exponentially with the square root of applied field as I∼exp-β√E. The energy positions of emission peaks were found to shift to longer wavelength with the applied field as ΔE∼β√E. From these findings, the Pool-Frenkel thermoelectric field effect is seen to be the dominant mechanism in the variation of exciton PL with the applied field even though the impact exciton and Franz-Keldysh effects contribute.     

Optical absorption due to paraexciton of Cu2O

In Cu₂O a new absorption line is observed at 97 cm^?1 below the n =1 of the yellow exciton (triply degenerate orthoexciton) under a strong magnetic field at 4.2 K. The line is assigned as a transition to a nondegenerate spin triplet state Γ⁺₂ (paraexciton). An analysis including the effects due to the n =1 of the green exciton yields 364 cm^?1 as the exchange energy, and 2.68 and ?1.02, or 1.02 and ?2.68 as the g-factors of the conduction and valence bands forming the yellow exciton.     

Influence of exciton energy on intersubband transition of chirped superlattice GaAs/AlGaAs quantum cascade laser

The influence of exciton energy on intersubband transition was simulated for a chirped supperlattice quantum cascade laser of GaAs/Al_xGa_1-xAs. Exciton energy was modelled as a function of QW width for alloys of various percentages of constituent elements. The results showed that the exciton energy decreased proportionally with increasing QW width. Models were also generated to study exciton energy as a function of the percent alloy contents of Al_xGa_1-xAs barriers for QWs of various widths. Exciton energy showed characteristics of higher discrete energy when QW width was narrower. Transition energy was also simulated from e₁ and e₂ to the 1s exciton state as functions of applied electric field at various QW widths. Our simulation results showed that the transition energy from e₂ to the 1s exciton state increased proportionally to the increasing strength of the electric field. This transition energy was indicative of THz range radiation.     

Spectroscopy of resonant excitation of exciton luminescence of GaSe–GaTe solid solutions

The luminescence excitation spectra of localized excitons in GaSe_0.85Te_0.15 solid solutions have been investigated at the temperature T = 2 K. It has been shown that the excitation spectra of excitons with the localization energy ε > 10 mV exhibit an additional maximum M _E located on the low-energy side of the maximum corresponding to the free exciton absorption band with n = 1. It has been found that the shift in the position of the maximum M _E in the excitation spectrum with respect to the energy of detected photons increases as the energy of detected photons decreases, i.e., with an increase in the localization energy of excitons. Under the resonant excitation of localized excitons by a monochromatic light from the region of the exciton emission band, in the exciton luminescence spectrum on the low-energy side from the excitation line, there is also a maximum of the luminescence (M _L ). The energy distance between the position of the excitation line and the position of the maximum in the luminescence spectrum increases with a decrease in the frequency of the excitation light. The possible mechanisms of the formation of the described structure of the luminescence excitation and exciton luminescence spectra of GaSe_0.85Te_0.15 have been considered. It has been concluded that the maximum M _E in the excitation spectrum and the maximum M _L in the luminescence spectrum are attributed to electronic–vibrational transitions with the creation and annihilation of localized excitons, respectively.