Low frequency surface and volume plasmophonons

Effects of spatial dispersion and electron Fermi-liquid interaction on the low frequency surface and volume plasmophonon spectra are considered. It is pointed out that in the frequency region ω ～ 10^13?14sec^?1 there exists weak damping branch of mixed sound oscillations in high doped semiconductors.     

First-principles studies on the electronic and optical properties of CuAlSe2 and CuAl5Se8

The electronic structure, dielectric function, absorption coefficient, and reflectivity of two polycrystalline semiconductors CuAlSe₂ and CuAl₅Se₈ are studied using the density functional theory within the generalized gradient approximation. There are different peaks in the spectra of the imaginary part of the dielectric function. The transitions between the valence bands and conduction bands are discussed at length. In addition, we also notice that the reduced absorption coefficient and reflectivity near band-edge in Cu-poor CuAlSe₂ are closely related to a reduction of the density of states near the valence band maximum.     

Frequency and density dependent radiative recombination processes in III–V semiconductor quantum wells and superlattices

In this paper we review the radiative recombination processes occurring in semiconductor quantum wells and superlattices under different excitation conditions. We consider processes whose radiative efficiency depends on the photogenerated density of elementary excitations and on the frequency of the exciting field, including luminescence induced by multiphoton absorption, exciton and biexciton radiative decay, luminescence arising from inelastic excitonic scattering, and electron-hole plasma recombination.

Semiconductor quantum wells are ideal systems for the investigation of radiative recombination processes at different carrier densities owing to the peculiar wavefunction confinement which enhances the optical non-linearities and the bistable behaviour of the crystal. Radiative recombination processes induced by multi-photon absorption processes can be studied by exciting the crystal in the transparency region under an intense photon flux. The application of this non-linear spectroscopy gives direct access to the excited excitonic states in the quantum wells owing to the symmetry properties and the selection rules for artificially layered semiconductor heterostructures.

Different radiative recombination processes can be selectively tuned at exciting photon energies resonant with real states or in the continuum of the conduction band depending on the actual density of photogenerated carriers. We define three density regimes in which different quasi-particles are responsible for the dominant radiative recombination mechanisms of the crystal: (i) The dilute boson gas regime, in which exciton density is lower than 10¹⁰ cm^-2. Under this condition the decay of free and bound excitons is the main radiative recombination channel in the crystal. (ii) The intermediate density range (n < 10¹¹ cm^-2) at which excitonic molecules (biexcitons) and inelastic excitonic scattering processes contribute with additional decay mechanisms to the characteristic luminescence spectra. (iii) The high density range (n ?10¹² cm^-2) where screening of the Coulomb interaction leads to exciton ionization. The optical transitions hence originate from the radiative decay of free-carriers in a dense electron-hole plasma.

The fundamental theoretical and experimental aspects of the radiative recombination processes are discussed with special attention to the GaAs/Al _x Ga_1-x As and Ga _x In_1-x As/Al _y In_1-y As materials systems. The experimental investigations of these effects are performed in the limit of intense exciting fields by tuning the density of photogenerated quasi-particles and the frequency of the exciting photons. Under these conditions the optical response of the quantum well strongly deviates from the well-known linear excitonic behaviour. The optical properties of the crystal are then no longer controlled by the transverse dielectric constant or by the first-order dielectric susceptibility. They are strongly affected by many-body interactions between the different species of photogenerated quasi-particles, resulting in dramatic changes of the emission properties of the semiconductor.

The systematic investigation of these radiative recombination processes allows us to selectively monitor the many-body induced changes in the linear and non-linear optical transitions involving quantized states of the quantum wells. The importance of these effects, belonging to the physics of highly excited semiconductors, lies in the possibility of achieving population inversion of states associated with different radiative recombination channels and strong optical non-linearities causing laser action and bistable behaviour of two-dimensional heterostructures, respectively.     

Giant red shift of the absorption spectra due to nonstoichiometry in GdCoO<Subscript>3–δ</Subscript>

The GdCoO_3–δ perovskite is a semiconductor with the energy gap E _g ≈ 0.5 eV from electrical transport measurements. It reveals unusual optical absorption spectra without transparency window expected for semiconductors. Instead we have measured the narrow transmittance peak at the photon energy ε₀ = 0.087 eV. To reconcile the transport and optical data we have studied the effect of oxygen vacancies on the electronic structure of the GdCoO_3–δ. We have found that oxygen vacancies result in the in-gap states inside the charge-transfer energy gap of the GdCoO₃. It is a multielectron effect due to strong electron correlations forming the electronic structure of the GdCoO_3–δ. These in-gap states decrease the transparency window and result in a narrow absorption minimum. The predicted temperature dependence of the absorption spectra has been confirmed by our measurements.     

Photoacoustic spectroscopy of surface defects states of semiconductor samples

This paper presents both theoretical and experimental issues connected with measurements and numerical analysis of the microphone amplitude and phase photoacoustic spectra of semiconductor samples exhibiting surface absorption connected with defects states located on their surfaces. The analytical model of surface absorption in semiconductors is described and the results of computations are compared with experimental amplitude and phase spectra for Zn_0.965Be_0.035Se crystal samples. This paper shows the importance of the phase spectra for the proper interpretation of the PA (photoacoustic) results.     

Density functional theory studies on the structural and physical properties of Cu-doped anatase TiO2(101) surface

Structure and physical properties of anatase TiO₂ (101) surface doped with copper have been studied by using density functional theory. Results show that Cu@Ti and Cu@O systems behave as p and n type semiconductors, respectively. Anatase TiO₂ (101) surface exhibits a blue shift in optical absorption spectra compared with pure TiO₂ bulk materials. Enhanced photocatalytic activity at wavelength around 400 nm could be contributed by the change in electronic structure.     

Na5, Na6和Na7团簇光学吸收谱的理论研究

以含时密度泛函理论为基础，结合从头赝势方法运用含时局域密度近似计算了Na₅，Na₆和Na₇团簇的动力学极化强度，并通过傅里叶变换得出了团簇的光学吸收谱.研究表明，计算结果可以较好地再现实验谱，而且Na₆和Na₇团簇的结果和组态相互作用的结果符合较好.二维结构和三维结构的Na₆团簇的计算结果表明，只有二维结构可出现低于2 eV以下的峰，而且二维结构光谱的计算结果与实验结果符合较好. 关键词： 光吸收谱 Na团簇 含时局域密度近似     

Dependence of the spectroscopic properties of pentauranylfluoride crystals on temperature in the range from 4.2 to 40 K

Using the configuration interaction model, we investigate the dependence of the shape, half-width, and position of the phononless lines (PL) in absorption and luminescence spectra of K₃UO₂F₅ and Rb₃UO₂F₅ crystals in the region 4.2–40 K. It is established that a Stokes shift in combining electron states leads to a nonsymmetric distortion in the Gauss shape of thePL. The temperature broadening of the PL is mainly associated with a change in the population of the initial states of oscillators (of the ground state for absorption and the 1 st excited state for luminescence), while a shift in maxima of the PL is caused by the forbidden 1 st electron transitions in complex uranyl compounds and is determined by the nonlinear electron-phonon interaction. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 6, pp. 824–827, November–December, 1999.     

Photoacoustic saturation spectra of some semiconducting group IV-A transition metal dichalcogenides

Photoacoustic saturation spectra in some semiconductors as HfSe₂, ZrS₂ and HfS₂ have been measured at energies above the fundamental absorption edge, where the photoacoustic signal is independent of the optical coefficient and the dips detected in the photoacoustic spectra may be ascribed to optical reflection effects inherent to the band structure. The comparison between our experimental data and those obtained by means of conventional and modulatory spectroscopic techniques proves that such method is a useful tool in order to determine the electronic structure of photoacoustically active semiconductors.     

Mobility–diffusivity relationship for heavily doped organic semiconductors

The relationship between the diffusivity D _n and the mobility μ _n of chemically doped organic n-type semiconductors exhibiting a disordered band structure is presented. These semiconductors have a Gaussian-type density of states. So, calculations have been performed to elucidate the dependence of D _n /μ _n on the various parameters of this Gaussian density of states. Y. Roichman and N. Tessler (Appl. Phys. Lett. 80:1948, 2002), and subsequently Peng et al. (Appl. Phys. A 86:225, 2007), conducted numerical simulations to study this diffusivity–mobility relationship in organic semiconductors. However, almost all other previous studies of the diffusivity–mobility relationship for inorganic semiconductors are based on Fermi–Dirac integrals. An analytical formulation has therefore been developed for the diffusivity/mobility relationship for organic semiconductors based on Fermi–Dirac integrals. The D _n /μ _n relationship is general enough to be applicable to both non-degenerate and degenerate organic semiconductors. It may be an important tool to study electrical transport in these semiconductors.     

Antiferromagnetic stripe ordering at the tetragonal-orthorhombic transition in LnOFeAs probed by X-ray absorption spectroscopy

Measurements of the Fe K-edge X-ray absorption near edge (XANES) spectra of LnOFeAs high T_c superconductors exhibit small but measurable changes across the tetragonal to orthorhombic phase structural phase transition. Calculations, based on the local structure centered at the Fe site obtained by crystallographic investigations, reproduce the observed changes in the spectra under the change of the crystal structure, indicating variations in the Fe local unoccupied electronic states. Calculated Fe density of states including stripe spin ordering in the orthorhombic phase show significant modifications with respect to Fe 3d density of states in the tetragonal phase or the density of states in the orthorhombic phase calculated ignoring spin ordering. This implies that the striped spin ordering in the orthorhombic phase is necessary to describe its electronic properties not only in the ground state but also for excited states above the Fermi energy.     

Resonant photoemission and absorption spectroscopy of the Cu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>TiSe<Subscript>2</Subscript> compound

Single crystals of the Cu _x TiSe₂ compound with x = 0.05, 0.09, and 0.33 have been grown. Resonance photoelectron Cu 3p-3d and 2d-3d spectra of the valence bands, the spectra of the core levels, and the L absorption spectra for titanium and copper have been obtained. It is shown that the degree of oxidation of titanium atoms is +4 and the state of copper atoms is close to the state of free copper ions. It is found that the spectra of the valence bands obtained under the Cu 3p and 2p resonance conditions radically differ. For the spectra in the Cu 2p excitation regime, several bands corresponding to different decay channels of the excited state are observed. According to calculations of the density of states, the 3d states of copper are filled incompletely; the occupancy of the 3d band of copper is 9.5 electrons per atom.     

Localized states in amorphous arsenic

Optical absorption and photoconductivity spectra of bulk amorphous arsenic are presented and analyzed using a general density of states model for amorphous semiconductors. It is concluded that localized states do exist in the forbidden gap and at the band edges and that transitions between localized states are significant.     

Fine band structure of the vibrational spectra of fullerite C<Subscript>60</Subscript> and enhancement of intermolecular interaction in high-temperature phase

The fine structure of the fundamental vibrational bands and some combination tones of fullerite C₆₀ in its IR absorption and reflection spectra, as well as in Raman spectra, has been studied. This structure is due to the overlapping components of Davydov and isotopic splittings and the removal of vibrational degeneracy with symmetry lowering. It is shown that for IR F _u (i) bands (i = 1–4) and low-frequency H _g (1) and A _g (1) bands in the Raman spectrum the splittings at room temperature exceed those for the low-temperature phase. The enhancement of intermolecular interaction at elevated temperatures is explained by the nonequilibrium vibrational excitation of the medium as a result of nonlinear interaction of vibrational modes and by the change in the electronic states.     

Resonant photoemission at the oxygen K edge as a tool to study the electronic properties of defects at SiO2 /Si and SiO2 /SiC interfaces

Silicon is by far the most important material used in microelectronics, partly due to the excellent electronic properties of its native oxide (SiO₂), but substitute semiconductors are constantly the matter of research. SiC is one of the most promising candidates, also because of the formation of SiO₂ as native oxide. However, the SiO₂/SiC interface has very poor electrical properties due to a very high density of interface states which reduce its functionality in MIS devices. We have studied the electronic properties of defects in the SiO₂/Si and SiO₂/SiC interfaces by means of XAS, XPS and resonant photoemission at the O 1s and the Si 2p edges, using silicon dioxide thermally grown with thicknesses below 10 nm. Our XAS data are in perfect agreement with literature; in addition, resonant photoemission reveals the resonant contributions of the individual valence states. For the main peaks in the valence band we find accordance between the resonant behaviour and the absorption spectra, except for the peaks at −15 eV binding energy, whose resonant photoemission spectra have extra features. One of them is present in both interfaces and is due to similar defects, while another one at lower photon energy is present only for the SiO₂/SiC interface. This is related to a defect state which is not present at the SiO₂/Si interface.     

Fano-type features in magnetoabsorption in semiconductors

It is shown that bulk semiconductors exhibit strongly asymmetric Fano-type resonance profiles in magnetoabsorption processes involving the formation of hot electron-hole pairs (EHPs) and accompanied by the scattering of the EHPs by defects. This result is valid for transitions to electronic states with large Landau quantum numbers, when the Coulomb interaction plays a small role. The physical reason for such a sharp change in the magnetoabsorption coefficient as compared with the expected result for the ordinary density of states in a quantizing magnetic field is that the electronic excitations are quasi-one-dimensional. The form of the resonance absorption is in good qualitative agreement with the experimental data. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 8, 619–622 (25 April 1996)     

Optical characterization of gallium antimonide highly doped with manganese

Gallium antimonide crystals highly doped with Mn were prepared by a liquid-phase-electroepitaxy growth method. The crystals exhibited high hole concentrations up to 6×10¹⁸ cm⁻³. Photoluminescence (PL) and transmission techniques were used for their investigation. Spectral line-shapes typical for highly doped semiconductors were observed. The lines revealed the features corresponding to band gap narrowing and valence-band filling phenomena. Values of the band-gap narrowing ΔE_g and the degree of the valence-band filling ΔE_F were estimated from the PL spectra. The ionization energy of the Mn acceptor E_i was estimated to be approximately 15.1-15.6 meV. At low temperatures, the PL maxima shifted relatively strongly towards higher energy with temperature. The shifts most probably resulted from a dramatic change in the electron density of states near the bottom of the conduction band. The extent of low-energy tails of the PL bands correlates with the doping levels. The transmission spectra exhibited an absorption band centred at around 774-780 meV. The band most probably originated in electron transitions from the level of spin-orbit splitting to the top of the valence band.     

Low energy electronic spectroscopy of an infinite-layer cuprate: A resonant inelastic X-ray scattering study of CaCuO2

We report the results of Oxygen K-edge soft X-ray absorption and emission spectroscopy that was performed on an infinite-layer insulating cuprate thin film CaCuO₂. Experimentally obtained spectra are consistent with local density approximation calculations. X-ray absorption spectra show a close resemblance to spectra obtained from homologous single crystal cuprates. In addition to d–d excitations, X-ray emission spectra reveal the presence of Zhang-Rice singlet states in the infinite-layer CuO₂ planes. The question of whether the Zhang-Rice singlet features are masked by the O 2p main-band is addressed: it is possible to quantify the position of the Zhang-Rice singlet using emission intensity profiles. X-ray emission is demonstrated as a tool for understanding CuO₂ planar electronic correlation in the prototypical infinite-layer. The energy difference, 2.0 eV, between the oxygen main-band and the Zhang-Rice singlet band is found to match values obtained theoretically using established planar electronic correlation parameters.     

The changes in electronic structure and optical properties of magnetic semiconductors at magnetic phase transitions

The influence of magnetic phase transitions on electronic structure and optical properties of magnetic semiconductors is discussed. Europium chalcogenides and chromium chalcogenide spinels are the main subjects of the investigation. It is shown, that many-body effects are responsible for the changes of optical properties and non-rigid band behavior of electronic structure. Magnetic phase transition leads to energy shift of wide bands and change in density of states of “magnetic” d(f)-electrons without any significant shift of their energies. The influence of fluctuations at T ～ T _c and antiferromagnetic semiconductors are also considered.     

Determination of landau fermi-liquid parameters in si-MOSFET systems

We analyze experimental data in order to evaluate Landau Fermi-liquid parameters. By using row data of recent Shubnikov-de Haas measurements, we derive, as a function of the electron density n _s, results for the compressibility mass of the charged two-dimensional electron gas. The compressibility mass is nearly equal to the transport mass even in the density region where the transport mass has the tendency to diverge. We conclude that Landau Fermi-liquid parameter F ₀^s (n _s) is nearly independent of electron density and close to zero. This result is derived for silicon (100) and silicon (111) surfaces. We also obtain the dependence of F ₁^s (n _s), determining the transport mass, and of F ₀^a (n _s), determining the spin susceptibility.