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1.
Pb(Zr0.4Ti0.6)O3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors, although with the same ferroelectric film, different top electrode materials incur different properties of PZT capacitors, such as fatigue, leakage, remanent and saturated polarization, except the similar crystal orientations of the PZT film. After 10^10 switch cycles, the remanent polarizations of the Ru/PZT/Pt and Pt/PZT/Pt capacitors decrease to 70% and 84%, respectively. The leakage current density of the latter increases obviously at positive bias after 108 switch cycles, compared with the former. Different materials for the top electrode bring different conditions at the PZT/top electrode interface. The influence of oxygen-vacancy concentration at the PZT/electrode interface and the influence of oxides of the electrode material at the PZT/electrode interface to charge injection can explain the difference of properties of the PZT capacitors with Pt or Ru as the top electrodes. 相似文献
2.
An analytical method has been proposed for calculating the probabilities P
i
(2)(s) of existence of X-X, X−□, and □−□ pair interactions in the nonmetal sublattice of M
2tX2t−1 superstructures formed in strongly nonstoichiometric compounds MX
y
(MX
y
□1−y) and M
2X
y
(MXy/2□1−y/2) with a high content of structural vacancies □. The main characteristics necessary for the quantitative determination of
the probabilities Pi(2)(s) as functions of the composition, degree of long-range order, symmetry, and structure type have been determined for all the
known superstructures M
2tX2t−1. 相似文献
3.
A. V. Voitsekhovskii V. V. Vasil’ev D. V. Grigor’ev I. V. Romanov 《Russian Physics Journal》2009,52(5):441-447
The process of reconstuction of the distribution profile of hole concentration in the p
+–n structure by the method of differential Hall measurements upon implantation of ions As+ (Е = 190 keV, D = 3.1014 cm-2, j = 0.025 μA/cm2) into epitaxial films Cd
x
Hg1–x
Te for x ~ 0.2, with the initial electron concentration and mobility n = 1014 cm-3 and μ = 2∙105 cm2∙V–1∙s–1 is numerically simulated. The dependences of degree of reconstruction of the hole-concentration distribution profile on the
depth of a shunting n-layer and magnitude of the magnetic field, at which the electrophysical parameters of the p
+–n structure are measured, are calculated. The dependence of the limiting magnetic field determining the magnetic-field range
for measurements on the n-layer depth is found. It is shown that in calculations one should use the conduction values measured
at the same magnetic fields as the Hall coefficients for determination of the holeconcentration distribution profile using
the Petritz model. 相似文献
4.
5.
Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5 × 10^-4 Ωcm^2 is obtained at annealing temperature of 550^o C. 相似文献
6.
First-principles calculations are applied to investigate the effect of biaxial strain on the band gap of wurtzite Al
x
Ga1−x
N. The band gap and band gap bowing parameter increase with compressive strain and decrease with tensile strain. The strain-induced
changes in the band gap of Al
x
Ga1−x
N are linear in the strain range of about −1% to 1% while the linearity is invalid out of the range. The linear coefficient
B(x), characterizing the relationship between the band gap and the biaxial stress, with a quadratic form is obtained. The value
of the band gap bowing parameter decreases from 1.0 eV for −2% strain to 0.91 eV for unstrained and to 0.67 eV for 2% strain. 相似文献
7.
The squeezing and higher-order squeezing properties of k orthonormalized eigenstates of the higher powers akqs(k≥3) of the annihilation operator of two-parameter deformed harmonic oscillator are investigated. It is found that the Nth-power squeezing [N=(m+1/2)k, m=0,1,2,…] can exist in the all of them when k is even. 相似文献
8.
《中国物理C(英文版)》2017,(1)
A measurement of the number of J/ψ events collected with the BESⅢ detector in 2009 and 2012 is performed using inclusive decays of the J/ψ. The number of J/ψ events taken in 2009 is recalculated to be(223.7±1.4)×10~6, which is in good agreement with the previous measurement, but with significantly improved precision due to improvements in the BESⅢ software. The number of J/ψ events taken in 2012 is determined to be(1086.9±6.0)×10~6. In total, the number of J/ψ events collected with the BESⅢ detector is measured to be(1310.6±7.0)×106, where the uncertainty is dominated by systematic effects and the statistical uncertainty is negligible. 相似文献
9.
A.M. Makushenko 《Optics and Spectroscopy》2010,108(1):153
Chronicle
Contents of the following issues of Opticheskiĭ Zhurnal (Journal of Optical Technology) 相似文献10.
Five new bands of the f1Δ-a1Δ TiO system have been observed in emission between 17774.0 cm?1 and 19801.0 cm?1. Rotational and vibrational analyses of the 0-1, 1-0, 1-2, 2-1, and 1-1 bands, as well as a reanalysis of the 0-0 band, yielded the following molecular constants (cm?1):
v | (×106) | (×106) | |||||
0 | 0.502277 (17) | 0.6411 (57) | 0.536168 (20) | 0.5938 (76) | |||
1 | 0.499198 (32) | 0.630 (15) | 0.533227 (13) | 0.5971 (46) | |||
2 | 0.530335 (26) | 0.636 (13) | |||||
4391.3230(84) | 0.582(154) | 2.4830(32) | |||||
4391.1921(94) | 0.594(179) | 2.4073(37) |
State | |||||||
0 | 17924.335 (7) | 0.17989 (4) | 0.177 (7) | 0.03853 (7) | |||
1 | 842.574 (7) | 0.18701 (4) | 0.163 (7) | 0.01496 (9) | |||
0 | 432.566 (6) | 0.18818 (4) | 0.162 (7) | 0.01508 (9) | |||
1 | 411.289 (7) | 0.18724 (4) | 0.184 (7) | ?0.96 (6) | |||
0 | — | 0.18839 (4) | 0.160 (7) | ?0.11 (6) |
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