Low temperature Hall-effect measurements in some metallic glasses

We report on simultaneous measurements of the Hall-effect and resistivity in the metallic glasses Pd₈₀Si₂₀ and Ni₇₈Si₈B₁₄. Data were taken within a temperature range of 1.7 to 300 K and in magnetic fields up to 1.1 T. Whereas the Hall constant is nearly independent of temperature in case of Pd₈₀Si₂₀, it changes sign at low temperatures in Ni₇₈Si₈B₁₄. The implications of the low temperature results are discused with respect to the origin of a resistivity minimum, present in both alloys.     

Mössbauer studies in a-Fe76-xNixCr4B12Si8

Room temperature Mössbauer studies on a-Fe_76-xNi_xCr₄B₁₂Si₈ alloys (0≤x≤30) are reported. The average hyperfine field is observed to remain constant. P(H) shows a low hyperfine field component which is found to be nearly absent for 2≤x≤4 samples. An attempt has been made to understand the correlation of this to the low temperature resistivity behaviour of Cr containing Fe-based amorphous alloys.     

Modification of Properties of Fe28Ni50Si9B13 Metallic Glass During Heat Treatment

The crystallization process of the metallic glass Fe₂₈Ni₅₀Si₉B₁₃ was investigated by DSC, Hall effect, electrical resistivity, and X-ray diffraction methods. It proceeds in two stages. Ni phase is formed at the temperature of 723 K and Ni₃B phase at 773 K. The phase creation is accompanied by an abrupt decrease of the Hall and electrical resistivities and the spontaneous Hall coefficient.     

Determination of the normal and anomalous hall effect coefficients in ferromagnetic Ni50Mn35In15 − x Si x Heusler alloys at the martensitic transformation

The magnetization, the electrical resistivity, the magnetoresistance, and the Hall resistivity of Ni₅₀Mn₃₅In_{15 ? x} Si _x (x = 1.0, 3.0, 4.0) Heusler alloys are studied at T = 80-320 K. The martensitic transformation in these alloys occurs at T = 220?C280 K from the high-temperature ferromagnetic austenite phase into the low-temperature martensite phase having a substantially lower magnetization. A method is proposed to determine the normal and anomalous Hall effect coefficients in the presence of magnetoresistance and a possible magnetization dependence of these coefficients. The resistivity of the alloys increases jumpwise during the martensitic transformation, reaches 150?C200 ??? cm, and is almost temperature-independent. The normal Hall effect coefficient is negative, is higher than that of nickel by an order of magnitude at T = 80 K, decreases monotonically with increasing temperature, approaches zero in austenite, and does not undergo sharp changes in the vicinity of the martensitic transformation. At x = 3, a normal Hall effect nonlinear in magnetization is detected in the immediate vicinity of the martensitic transformation. The temperature dependences of the anomalous Hall effect coefficient in both martensite and austenite and, especially, in the vicinity of the martensitic transformation cannot be described in terms of the skew scattering, the side jump, and the Karplus-Lutinger mechanisms from the anomalous Hall effect theory. The possible causes of this behavior of the magnetotransport properties in Heusler alloys are discussed.     

Anomalous Hall effect in (Co41Fe39B20) x (Al-O)100 − x nanocomposites

The concentration dependence of the coefficient R _s characterizing the anomalous Hall effect (AHE) has been studied by measuring the electrical resistivity ρ, magnetoresistance, and the magnetic field dependence of magnetization and Hall resistivity of (Co₄₁Fe₃₉B₂₀) _x (Al-O)_{100 ? x} nanocomposite thin films. It has been demonstrated that the AHE coefficient increases by more than an order of magnitude with a decrease in the percentage x of the amorphous ferromagnetic metal from 60 to 30 and its behavior is described by the relation R _s ～ ρ ^m , where m = 0.46 ± 0.1. At the same time, the coefficient characterizing the normal Hall effect grows by a factor of less than 10. The mechanisms underlying the giant Hall effect in nanocomposites have been discussed.     

Enhancement of the colossal magnetoresistance in Eu1 − x Ca x B6

The transport and magnetic properties of single crystal samples of substitutional solid solutions Eu_{1 ? x} Ca _x B₆ (0 ≤ x ≤ 0.26) have been studied at temperatures 1.8–300 K in magnetic fields up to 80 kOe. It has been shown that an increase in the calcium concentration results in the suppression of the charge transport accompanied by an increase in the amplitude of the colossal magnetoresistance (CMR) up to the value (ρ(0) ? ρ(H))/ρ(H) ≈ 7 × 10⁵ detected for x = 0.26 at liquid-helium temperature in a field of 80 kOe. The transition from the hole-like conductivity to the electron-like conductivity has been observed in the Eu_0.74Ca_0.26B₆ solid solution in the CMR regime at T < 40 K. The Hall mobility values μH = 200?350 cm²/(V s) estimated for charge carriers in the strongly disordered matrix of the Eu_0.74Ca_0.26B₆ solid solution are comparable with the charge carrier mobility μH = 400?600 cm²/(V s) for the undoped EuB₆ compound. The anomalous behavior of the transport and magnetic parameters of the Eu_{1 ? x} Ca _x B₆ solid solutions is discussed in terms of a metal-insulator transition predicted within the double exchange model for this system with low carrier density.     

Resistivity and magnetoresistance of Fe80B20 and Fe78B13Si9 amorphous glasses

Summary The electrical resistivity of Fe₈₀B₂₀ and Fe₇₈B₁₃Si₉ amorphous glasses as a function of temperature from 293 K down to 15 K was measured, and it was found to fit quite well with the model given by Cote and Meisel. Comparison between our resistivity measurements of Fe₈₀B₂₀ and others was made, where some differences were found. These resistivity differences are evidence for a variety of amorphous atomic arrangements of the samples. The longitudinal magnetoresistance of Fe₈₀B₂₀ and Fe₇₈B₁₃Si₉ at 293K and 77K was measured in a low magnetic field. The observed magnetoresistance shows a typical field dependence known for ferromagnetic materials.     

Temperature dependent hyperfine distributions in Fe-B and Fe-Ni-Si-B glasses

Mössbauer spectra of amorphous Fe_xNi_{80- x} Si₁₀B₁₀ (x=10,50) and Fe₈₀B₂₀ have been taken at 4.2-300K and in 0-6T applied magnetic fields. Detailed analysis shows that the standard deviation of the magnetic hyperfine field σ(B) varies with temperature depending on the iron concentration. For small x the variation is taken as evidence for a break-down of long-range magnetic order. Temperature induced changes in the fluctuations and correlations of the hyperfine parameters are reported. In all cases the isomer shift fluctuations are small compared to those of the first-order electric quadrupole splitting (u); neither are strongly temperature dependent. The correlation <ΔBΔu> is negative and increases with temperature. For Fe₈₀B₂₀, <ΔBΔδ> is positive and increases with temperature, whereas for Fe-Ni-Si-B it is small, negative, and temperature invariant.     

High-field magnetoresistance and Hall effect in Bi2Sr2CuO x single crystals

We investigated the in-plane magnetoresistance and the Hall effect of high-quality Bi₂Sr₂CuO_x single crystals with T _c (midpoint) = 3.7–9.6 K in dc magnetic fields up to 23 T. For T < 10 K, the crystals show the classical positive magnetoresistance. Starting at T ≈ 14 K, an anomalous negative magnetoresistance appears at low magnetic fields; for T ≥ 40 K, the magnetoresistance is negative in the whole studied range of magnetic fields. Temperature and magnetic field dependences of the negative-magnetoresistance single crystals are qualitatively consistent with the electron interaction theory developed for simple semiconductors and disordered metals. As is observed in other cuprate superconductors, the Hall resistivity is negative in the mixed state and changes its sign with increasing field. The linear T-dependence of cotθ_H for the Hall angle in the normal state closely resembles that of the normal-state resistivity as expected for a Fermi liquid picture.     

Magnetism and Hall effect of the Heusler alloy Co2ZrSn synthesized by melt-spinning process

Magnetization and Hall resistivity have been measured for the Heusler alloy Co₂ZrSn synthesized by the melt-spinning process. The temperature dependence of magnetization follows the spin-wave theory at a low temperature. Abnormal behaviors are observed both in resistance and Hall effect below 8 K. The present Hall resistivity measurement shows that the anomalous Hall effects coexist with normal Hall effects. The negative value of normal Hall coefficient over the whole temperature range reveals that the major charge carriers are electrons. The anomalous Hall coefficient is proportional to the zero-field resistivity, suggesting that magnetic skew scattering is the dominant mechanism in the ferromagnetic regime. The reason for the abnormity below 8 K during transport is discussed.     

氢对非晶态Y5Ni95合金膜的磁性和电子输运性质的影响

采用电解法实现了非晶态Y,Ni₉₅合金的加氢。在1.5—400K温度范围内测量了a-Y,Ni₉₅H_x(x=0—15.1)合金的磁矩、电阻率和霍耳电阻率随氢含量的变化关系。结果指出,随氢含量增加,样品的0K磁矩、居里温度和电阻率温度系数显著下降,而高场磁化率、电阻率和反常霍耳系数则迅速增加。借助现行的理论对加氢引起的上述影响进行了简要的讨论。 关键词：     

Phase transition in metallic glasses Fe66Co12Si9B13 and Fe66Ni12Si9b13

Phase transitions were analysed during annealing of amorphous metallic glasses Fe₆₆Co₁₂Si₉B₁₃ and Fe₆₆Ni₁₂Si₉B₁₃. They were measured by means of X-ray diffraction, electrical and Hall resistivity methods. Forming crystalline phases were identified. Those for metallic glasses with cobalt are α-Fe, Fe₃B and Co₂B while those with nickel are α-Fe, Fe₂B, Ni₂B.     

Isotope effect in charge transport of LuB12

The galvanomagnetic properties of single-crystal samples with various isotopic boron compositions have been investigated for the first time for the normal state of superconductor LuB₁₂ (T c ≈ 0.44 K). Precision measurements of the resistivity, Hall coefficient, and magnetic susceptibility have been performed over a wide temperature range of 2–300 K in magnetic fields up to 80 kOe. A change of the charge transport regime in this nonmagnetic compound with metallic conduction is shown to occur near T* ≈ 50−70 K. As a result, a sharp peak with significantly different amplitudes for Lu¹⁰B₁₂ and Lu¹¹B₁₂ is recorded in the temperature dependences of the Hall coefficient R _H(T) near T*. A significant (about 10%) difference (in absolute value) of the Hall coefficients R _H for the Lu¹⁰B₁₂ and Lu¹¹B₁₂ compounds at helium and intermediate temperatures has been found and the patterns of behavior of the dependence R _H(H) for T < T* in an external magnetic field H ≤ 80 kOe for Lu¹⁰B₁₂ and Lu¹¹B₁₂ are shown to differ significantly. Analysis of the Curie-Weiss contribution to the magnetic susceptibility χ(T) leads to the conclusion about the formation of magnetic moments μ_eff ≈ (0.13−0.19)μ_B in each unit cell of the fcc structure of LuB₁₂ compounds with various isotopic compositions. The possibility of the realization of an electronic topological 2.5-order transition near T* and the influence of correlation effects in the 5d-band on the formation of a spin polarization near the rare-earth ions in LuB₁₂ is discussed.     

Temperature- and magnetic field dependence of the Hall effect in the heavy fermion system CeCu6

The temperature dependence of the Hall coefficient and the magnetic field dependence of the Hall resistivity of CeCu₆ have been determined in the temperature range 80 mK<T<10 K and in magnetic fields up to 10T. The Hall coefficientR _H shows a very strong temperature dependence with two extrema and a change of sign, and the Hall resistivity _xy has a strong field dependence with up to two changes of sign. The observed behavior can partially be explained by the field- and temperature dependence of the skew scattering contribution to the Hall coefficient.     

Hall effect of Yb intermediate valent intermetallic compounds

Hall effect measurements between 300 K and 4.2 K for the intermediate valent intermetallics YbCuAl, YbCu₂Si₂, YbInAu₂, YbPd, YbAl₃ and YbAl₂ are presented and discussed in detail. Correlations found between the Hall coefficient, the electrical resistivity and the magnetic susceptibility for some of these compounds suggest an anomalous contribution due to skew scattering.     

Galvanomagnetic effects in Fe40Ni40B20

Hall effect and magnetoresistance measurements on the amorphous ferromagnet Fe₄₀Ni₄₀B₂₀ are reported. Both properties are approximately independent of temperature (1.5–300 K) and related to magnetization. The extraordinary Hall coefficient is 3.5 × 10^?8 m³/As. The temperature dependence of the resistivity (1.5–30 K) is also reported.     

Effect of the Composition and the Crystal Structure on the Electrophysical Properties of the Ni<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>W<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> System at Low Temperatures

The problem of establishing the correlation between, on the one hand, the chemical and phase compositions of Ni_1–xW_x alloys (0 ≤ x ≤ 0.5) and, on the other hand, the character of the temperature dependences of the electrical resistivity, is considered. Based on the experimental ρ(T) curves, the concentration dependences of are reconstructed in the wide temperature range (50 K ≤ T ≤ 273 K). The ρ(x) curves have features related to a change in the crystal structures of the alloys (concentration fcc–bcc phase transition), their magnetic structures and percolation processes occurring in the two-phase fcc + bcc medium.     

Effect of pressure and anionic substitution on the electrical properties of HgTeS crystals

The resistivity ρ and the Hall constant R for the HgTe_1?x S_x (0.04≤x≤0.6) crystals have been investigated in the temperature range 4.2–350 K in the magnetic fields B up to 14 T. The pressure dependences of the resistivity ρ have been measured at the pressures P as high as 1 GPa at temperature T=77–300 K and magnetic field B=0–2 T. It is found that the samples with x≤0.20 exhibit a decreasing dependence ρ(T) typical of zero-gap semiconductors, whereas the samples with x≥0.27 show the dependence ρ(T) characteristic of semimetals. For the semiconducting crystals with x≈0.20 and x≈0.14, the temperature coefficient of ρ(T) changes sign at T=265 and T>300 K, respectively. Under a pressure of ≈1 GPa, the temperature of the sign inversion decreases by ≈30 K. An increase in the magnetic field B and a rise in the temperature T lead to a change in the sign of the Hall constant R for the semiconducting samples, but do not affect the electronic sign of R for the semimetallic samples. The behavior of R and ρ correlates with the thermoemf data obtained at the quasi-hydro-static pressure P up to 3 GPa. It is demonstrated that the substitution of sulfur atoms for tellurium atoms brings about an increase in the concentration of electrons and a decrease in their mobility. The transition to the wide-gap semiconductor phase is observed at P>1–1.5 GPa. The conclusion is drawn that the semimetallic crystals HgTe_1?x S_x with x≥0.27 and HgSe are similar in properties.     

Mössbauer study of ferromagnetic metallic glasses irradiated by swift heavy ions at temperatures 100 and 300 K

The effect of swift heavy ion irradiation on ferromagnetic metallic glasses Fe₄₀Ni₃₈Mo₄B₁₈ and Fe₇₈Si₉B₁₃ has been studied. The ion beams used are 100 MeV ¹²⁷I and 180 MeV ¹⁹⁷Au. The specimens were irradiated at fluences ranging from 3 × 10¹² to 1.5 × 10¹⁴ ions/cm². The irradiations have been carried out at temperatures 100 and 300 K. The magnetic moments are sensitive towards the irradiation conditions such as irradiation temperature and stopping power of incident ion beam. The irradiation-induced effects have been monitored, by using Mössbauer spectroscopy. The modifications in magnetic anisotropy and hyperfine magnetic field distributions, as an effect of different irradiation temperature as well as different stopping power have been discussed. After irradiation, all the samples remain amorphous and magnetic anisotropy considerably changes from its original in-plane direction. The results show enhancement in magnetic anisotropy in the specimen irradiated at 100 K, as compared to that of irradiated at 300 K. It is expected that at low temperature, the stresses produced in the material would remain un-annealed, compared to the samples irradiated at room temperature and therefore, the modification in magnetic anisotropy would be enhanced. A distribution of hyperfine magnetic field, of the samples irradiated at low temperature, show a small but distinct peak at ～?11 Tesla, indicating Fe-B pairing.     

铁基非晶的低频脉冲磁场处理效应

对非晶合金Fe₇₈ Si₉ B₁₃进行了低频脉冲磁场处理，用穆斯堡尔谱学、透射电 镜等方法观察处理试样的微观结构变化.研究发现，当脉冲频率20—25Hz,磁场16—32kA/m,作用时间≤2min，合金发生了纳米晶化，纳米相岐睩e(Si)晶粒尺寸为10nm. 而且，在低频脉冲磁场处理过程中，非晶试样的温升≤20℃. 关键词： 非晶态合金 脉冲磁场处理 纳米晶化