The GaAs (001)−c(4×4) and (2×4) reconstructions: A comparative photoemission study

Surface sensitive photoemission measurements of As(3d) core levels give new experimental evidence that the MBE-grown GaAs (0 0 1)?c(4×4) surface is richer in As than the 2×4 surface and that it is produced by an As overlayer chemisorbed onto the As atoms terminating the polar GaAs(0 0 1) surface. A study of As thermal desorption shows that the c(4×4) structure persists over a broad range of surface stoichiometry.     

Development of electronic structure of Ni thin films on Cu(0 0 1) surfaces

We have traced the development of the Ni electronic structure with thickness variation on flat and nano-structured Cu(0 0 1) surfaces by means of photoemission spectroscopy. The binding energy of the Ni 2p_3/2 main peak and satellite peak is found to have shifted monotonically in the direction opposite to each other, with the increase of Ni coverage. The reduced binding energy of the thin film’s main peak is strongly correlated to the Cu 4s/Ni 3d interfacial hybridization effect (s/d IHE) and the narrowing of the d band with the reduction of dimensions, while the increased satellite binding energy results from the combination of interface hybridization and expansion of an extended 4s-like state towards the vacuum. The center of the Ni d_xy band is predicted to shift closer to the Fermi level with increasing film thickness. Enhanced satellite intensity in thin films is observed, correlating to the narrowing of the d band with decreased film thickness. Through comparison of Ni films grown on flat versus nano-structured Cu(0 0 1) surfaces, the mixing of Cu and Ni atoms is found to be enhanced at the terrace edge region and consequently a larger s/d IHE is predicted for Ni on the nano-structured surface.     

The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique

This paper reports that the Schottky barrier height modulation of NiSi/n-Si is experimentally investigated by adopting a novel silicide-as-diffusion-source technique, which avoids the damage to the NiSi/Si interface induced from the conventional dopant segregation method. In addition, the impact of post-BF₂ implantation after silicidation on the surface morphology of Ni silicides is also illustrated. The thermal stability of Ni silicides can be improved by silicide-as-diffusion-source technique. Besides, the electron Schottky barrier height is successfully modulated by 0.11~eV at a boron dose of 10¹⁵~cm^-2 in comparison with the non-implanted samples. The change of barrier height is not attributed to the phase change of silicide films but due to the boron pile-up at the interface of NiSi and Si substrate which causes the upward bending of conducting band. The results demonstrate the feasibility of novel silicide-as-diffusion-source technique for the fabrication of Schottky source/drain Si MOS devices.     

AES and ELS study of gold deposition on top of hydrogen saturated Si(1 1 1) surfaces

Gold was deposited on top of hydrogen saturated Si(1 1 1) clean surfaces. The electronic nature and atomic intermixing between gold overlayer and silicon substrate were studied by AES and ELS. It is claimed that there is a critical thickness (～ 2 ML), where 1 ML = 7.8 × 10¹⁴ atoms cm^?2 for Si(1 1 1), for gold to induce alloyed metallic overlayer formation on the surface of a specimen due to intermixing reaction independently whether a surface of Si(1 1 1) substrate is saturated with hydrogen atoms or not.     

Mn/GaAs(100)界面的形成和化学反应的研究

利用低能电子衍射(LEED)、X射线光电子能谱(XPS)、电子能量损失谱(EELS)、紫外光电子能谱(UPS),对室温下Mn在GaAs(100)4×1表面的淀积过程进行了研究。研究结果表明,当锰的覆盖度θ≥0.25nm时,LEED图案完全消失,表明Mn没有生长成单晶。LEED,EELS的结果都表明淀积初期是层状生长的。对XPS的Ga2p_3/2,As2p_3/2的峰形、强度进行分析,可以知道在很小的覆盖度下,Mn就与衬底反应。置换出的Ga被局限在离原来的界面约3nm 关键词：     

The chemisorption of Co on Rh(111)

The adsorption of CO on Rh(111) has been studied by thermal desorption mass spectrometry and low-energy electron diffraction (LEED). At temperatures below 180 K, CO adsorbs via a mobile precursor mechanism with sticking coefficient near unity. The activation energy for first-order CO desorption is 31.6 kcal/mole (ν_d = 10^13.6s^?1) in the limit of zero coverage.As CO coverage increases, a (√3 ×√3)R30^u overlayer is produced and then destroyed with subsequent formation of an overlayer yielding a (2 × 2) LEED pattern in the full coverage limit. These LEED observations allow the absolute assignment of the full CO coverage as 0.75 CO molecules per surface Rh atom. The limiting LEED behavior suggests that at full CO coverage two CO binding states are present together.     

Ordering of Si atoms on the ten-fold surface of the decagonal Al72Ni11Co17 quasicrystal

The deposition of Si at room temperature on the ten-fold quasicrystalline surface of d-Al-Ni-Co has been investigated by scanning tunnelling microscopy. At a coverage of 0.30 ML, Si pentagons in two orientations related by inversion symmetry are observed on the same substrate terrace. The side-length of the pentagons is 4.2 ± 0.2 Å. At this coverage, the Si adlayer displays quasiperiodic order. Depressions related to pentagonal features observed in STM images of the clean d-Al-Ni-Co substrate are proposed as plausible adsorption sites for the Si adatoms. As the Si coverage is increased, the well-defined structures observed are no longer distinguishable. At coverages above the monolayer, the Si overlayer follows a rough three-dimensional growth mode.     

Magnetization and specific heat studies of RNi4Ga (RSm,Gd and Tb)

In order to elucidate the anomalous magnetic properties in the ferromagnetically ordered state of SmNi₄Ga GdNi₄Ga and TbNi₄Ga, we have carried out a detailed study with magnetization and specific heat (SH) measurements. GdNi₄Ga shows the possibility of a filled 3d band and a helical spin arrangement below the ordering temperature. TbNi₄Ga shows a dominant crystal field effect resulting in a deviation of T_C from the de-Gennes scaling and possible Schottky anomalies in the SH. SmNi₄Ga shows a large coercivity at low temperatures. A rough estimate of the domain wall thickness in SmNi₄Ga gives a value of 8 Å.     

Surface structure effects via photoexcited core electron diffraction for Na on Ni

Photoemission from the Na 2p core level has been measured in the range ?ω = 40–120 eV for a c(2×2) Na overlayer on a Ni(001). surface. Weak oscillations in the Na 2p emission intensity vs. wavelength were observed and are interpreted as due to photoelectron scattering. The observed peaks closely match, in energy, those derived in recent calculations which assume the Na occupies a hollow site 2.23Å above the Ni surface layer. The data therefore indicate that observation and calculation of such effects may allow surface structure determinations.     

Pt interactions with annealed and chemically-etched Nb-doped SrTiO3(0 0 1) surfaces: Metal/oxide surface chemical effects on band bending behavior

XPS and LEED have been used to characterize the interaction of sputter-deposited Pt (maximum coverage <5 ML) with Nb-doped SrTiO₃(0 0 1) surfaces prepared either by annealing in O₂ and then UHV, or by chemical-etching in aqua regia. The annealed surface exhibits an ordered (1 × 1) LEED pattern, with additional diffraction spots and streaks indicating the presence of oxygen vacancies. Increasing Pt coverage results in the decrease of the observed Pt(4f_7/2) binding energy and the uniform shift of the Sr(3d), Ti(2p) and O(1s) levels to smaller binding energies, as expected for Pt cluster growth and surface-to-Pt charge donation on an n-type semiconductor. The etched surface is disordered, and exhibits a hydroxylated surface with a contaminant C film of ∼23 ? average thickness. Pt deposition on the etched surface results in an immediate decrease in the intensity of the OH feature in the O(1s) spectrum, and a uniform shift of the Sr(3d), Ti(2p) and O(1s) levels to larger binding energies with increasing Pt coverage. The observed Pt(4f_7/2) binding energy on the etched surface (∼72 eV) is independent of Pt coverage, and indicates substantial electronic charge donation from the Pt to surface hydroxyl species. The observation of band bending towards higher binding energies upon Pt deposition (behavior normally associated with p-type semiconductors) demonstrates that sub-monolayer quantities of adsorbates can alter metal/oxide interfacial charge transfer and reverse the direction of band bending, with important consequences for Schottky barrier heights and device applications.     

The adsorption of Xe and CO on a Cu (311) single crystal surface

LEED, electron energy loss spectroscopy and surface potential measurements have been used to study the adsorption of Xe and CO on Cu (311). Xe is adsorbed with a heat of 19 ± 2 kJ mol^/t-1. The complete monolayer has a surface potential of 0.58 V and a hexagonal close-packed structure with an interatomic distance of 4.45 ± 0.05 Å. CO gives a positive surface potential increasing with coverage to a maximum of 0.34 V and then falling to 0.22 V at saturation. The heat of adsorption is initially 61 ± 2 kJ mol^?1, falling as the surface potential maximum is approached to about 45 kJ mol^?1. At this coverage streaks appear in the LEED pattern corresponding to an overlayer which is one-dimensionally ordered in the [011&#x0304;] direction. Additional CO adsorption causes the heat of adsorption to decrease further and the overlayer structure to be compressed in the [011&#x0304;] direction. At saturation the LEED pattern shows extra spots which are tentatively attributed to domains of a new overlayer structure coexisting with the first. Electron energy loss spectra (EELS) of adsorbed CO show two characteristic peaks at 4.5 and 13.5 eV probably arising from transitions between the electronic levels of chemisorbed CO.     

Buildup of the InSe/M interface (M Pd, Au) studied by X-ray photoemission and X-ray absorption spectroscopy

The electronic properties of InSe/M (M  Pd, Au) interfaces have been studied by X-ray photoemission measurements. For the InSe/Pd interface, it has been found that Pd atoms diffuse into the InSe lattice at early stages of Pd coverage, acting as acceptor centers. As the Pd coverage increases, a Pd-InSe reaction determines the electronic behaviour of the interface. However, for Pd coverages higher than 1 ML, the barrier formation tends to be controlled by an emerging bulklike Pd overlayer. Despite the atomic structure of this system is far from that expected for an ideal Schottky one, the final electronic barrier value is close to that expected for an abrupt InSe/Pd Schottky interface. On the contrary, the InSe/Au system appeared to behave as a quasi-ideal abrupt Schottky interface. Annealing processes performed at temperatures higher than 600 K alter this scheme, as revealed by X-ray absorption spectroscopy measurements, enhancing diffusion of Au atoms into InSe. In any case, the electronic barrier results to be determined by the Au overlayer formed.     

Study of Ni/Si(1 0 0) solid-state reaction with Al addition

The characteristics of Ni/Si(1 0 0) solid-state reaction with Al addition (Ni/Al/Si(1 0 0), Ni/Al/Ni/Si(1 0 0) and Al/Ni/Si(1 0 0)) is studied. Ni and Al films were deposited on Si(1 0 0) substrate by ion beam sputtering. The solid-state reaction between metal films and Si was performed by rapid thermal annealing. The sheet resistance of the formed silicide film was measured by four-point probe method. The X-ray diffraction (XRD) was employed to detect the phases in the silicide film. The Auger electron spectroscopy was applied to reveal the element profiles in depth. The influence of Al addition on the Schottky barrier heights of the formed silicide/Si diodes was investigated by current-voltage measurements. The experimental results show that NiSi forms even with the addition of Al, although the formation temperature correspondingly changes. It is revealed that Ni silicidation is accompanied with Al diffusion in Ni film toward the film top surface and Al is the dominant diffusion species in Ni/Al system. However, no Ni_xAl_y phase is detected in the films and no significant Schottky barrier height modulation by the addition of Al is observed.     

Electrical properties of p-type GaP schottky barrier under stress

The effect of stress on a Schottky barrier height at a metal-semiconductor interface is investigated for metal-p-type GaP contacts. The diodes are fabricated by evaporating metals (Ag, Au) on polar (111)Ga and (1&#x0304;1&#x0304;1&#x0304;)P surfaces. Stress is applied to the diodes by bending the crystal wafers attached to the cantilever. The variation of the barrier height with stress is determined from the measurements of the current-voltage characteristics under stress. The barrier height decreases under compressive stress parallel to the interface and increases under tensile stress. The change in barrier height on the (111)Ga surface is greater than that on the (1&#x0304;1&#x0304;1&#x0304;)P surface. These experimental results are discussed from the point of both the piezoelectricity and the change in band gap caused by stress.     

First-principles studies on initial growth of Ni on MgO(0 0 1) surface

To elucidate the initial growth of metal on oxide surface, we studied adsorption of small nickel clusters, Ni_n (n = 1-5), on MgO(0 0 1) surface using first-principles method based on density-functional theory. It was found that the preferential adsorption site for an isolated Ni atom is directly above the surface oxygen atom. A strong covalent bond with partial ionic character is formed between the Ni adatom and the surface oxygen atom. Various structures were considered for the Ni_n isomers and 3D structures were found to be energetically more stable than 2D structures for clusters of more than two atoms. For the 2D clusters, metal-metal bonds prevail over metal-substrate bonds with increasing Ni coverage. The calculated work function and ionization energy were found to vary with Ni coverage which is attributed to the change of the surface dipole moment upon metal adsorption, while the evolution of Schottky barrier height at the initial growth stage is dominated by the adatom-induced gap states.     

Theoretical studies of the bonding of sulfur to models of the (100) surface of nickel

Electronic wavefunctions have been obtained as a function of geometry for a S atom bonded to Ni clusters consisting of 1 to 4 atoms designed to model bonding to the Ni(100) surface. Electron correlation effects were included using the generalized valence bond and configuration interaction methods. Modeling the (100) surface with four Ni atoms, we find the optimum S position to be 1.33 Å above the surface, in good agreement with the value (1.30 ± 0.10 Å) from dynamic LEED intensity calculations. The bonding is qualitatively like that in H₂S with two covalent bonds to one diagonal pair of Ni atoms. There is a S pπ pair overlapping the other diagonal pair of Ni atoms. [Deleting this pair the S moves in to a position 1.04 Å from the surface.] There are two equivalent such structures, the resonance leading to equivalent S atoms and a c(2 × 2) structure for the S overlayer. The Ni in the layer beneath the surface seems to have little effect (~0.03 Å) on the calculated geometry. Bonding the S directly above a single Ni atom leads to a much weaker bond (D_e = 3.32 eV) than does bonding in a bridge position (D_e = 5.37 eV).     

Surface core-level shifts for chlorine covered GaAs (1 1 0) surfaces

Photoemission measurements show that upon chlorine adsorption the Ga 3d surface core-level remains essentially unchanged whereas the As 3d level is shifted by 820 meV to higher binding energy changing the sign of the shift with respect to the bulk level. Chlorine is thus bound to As in a single chemisorption state. The shift is due to charge transfer. The adsorption does not change the surface relaxation.     

Hydrogen-induced structural changes on NiAl(110)

LEED I-V analysis and surface X-ray scattering measurements have been used to determine the structural changes induced by the adsorption of atomic hydrogen on NiAl(110) at 130 K. The clean surface, ordered with 50at% Ni50at%Al, relaxes away from bulk truncation to exhibit a large ripple. At 130 K the rippling (Al out, Ni in) is 0.19 Å, as determined by LEED I-V. The adsorption of atomic hydrogen reduces this rippling by 16% at half of saturation coverage and at full saturation by 44%. Saturation coverage was measured to be one hydrogen atom per (1 × 1) surface unit cell (1 monolayer) using nuclear reaction analysis. This observation contradicts first principles calculations that predict 1 monolayer of H removes the surface rippling.     

Band bending at the Ni/Si(100)-2×1 submonolayer interface

Band bending at the Ni/Si(100)-2×1 interface has been monitored by using Si 2p core level photoemission spectra. Two nickel-induced Si 2p components appear in the initial interaction between Ni and Si(100)-2×1, which is confined at the top surface and the first subsurface layers. At Ni coverage less than 0.0375 ML, Ni atoms prefer the adamantane interstitial sites on the first subsurface, but switch to the pedestal sites on Si dimer rows at higher Ni coverage. The change in the preferred occupation sites of Ni atoms on the Si(100)-2×1 surface strongly affects the amount of band bending shift. The shift towards higher binding energy, when Ni atoms occupy the adamantane interstitial sites, is attributed to metal-induced-gap states. While Ni atoms occupy the pedestal sites, the band bending shift is reduced which is attributed to the passivation of surface states.     

Well width dependence of electron-phonon interaction in ZnSe/ZnSxSe1-x superlattices determined by micro-raman spectroscopy

We report a study of multiphonon resonant Raman scattering in a series of symmetric (ZnSe)_d(ZnS_1-xSe_x)_d superlattices (SL), 20Å ≤ d ≤ 150Å. In addition to confined optical phonons, the energies of interface (IF) modes with in-plane wavevectors have been assessed by means of micro-probe Raman measurements in backscattering from the SL edge. The comparison between one- and two-phonon spectra shows that the electron-phonon interaction is dominated by ZnSe-like IF phonons for d < 50Å, whereas LO₂ phonons prevail for larger well.