Development of a procedure for the multi-element determination of trace elements in wine by ICP-MS

An inductively coupled plasma mass spectrometric (ICP-MS) procedure has been developed for the determination of trace elements in wine. The procedure consists in simple 1+1 dilution of the wine and semi-quantitative analysis (without external calibration) using In as internal standard. Thirty-one elements at concentrations ranging from 0.1 mg mL(-1) to 0.5 ng mL(-1) can be determined by ICP-MS analysis with and without digestion. It was investigated whether a matrix effect observed for EtOH in the wine matrix can be overcome by application of a micro-concentric nebulizer with a membrane desolvator (MCN 6000). The results obtained for the MCN 6000 are compared with those obtained by use of a conventional Meinhard nebulizer. It is shown that the observed matrix effect can only be compensated by use of an internal standard for the Meinhard nebulizer, but not for the MCN 6000. Results for ICP-MS are compared with those obtained by total reflection X-ray fluorescence spectrometry (TXRF).     

TXRF法测定松花粉中的9种生命元素

建立了微波消解前处理,全反射X射线荧光法(TXRF)同时测定松花粉中K、Ca、Ti、Mn、Fe、Ni、Cu、Zn和Rb9种生命元素含量的分析方法.松花粉原料经过微波消解前处理后,采用全反射X射线荧光光谱净计数、QXAS分析软件解谱和单一内标法进行定量分析.比较了干灰化法、湿消解法和微波消解法3种前处理方法的效果,并确立微波消解法作为样品前处理方法.用微波消解- TXRF法测定了花粉标准物质中的上述9种元素,并计算得到其仪器检出限(LLD)为0.002～0.054 mg/L,方法检出限(LDM)为0.004～0.122 mg/kg.TXRF法测定各元素的相对标准偏差(RSDs)为1.0％～5.5％.该方法操作简单、样品用量少、检出限低,对实际样品松花粉的测定结果与ICP - MS法无显著性差异.     

Analysis of human blood serum and human brain samples by total reflection X-ray fluorescence spectrometry applying Compton peak standardization

The method of using the Compton peak as internal standard in total reflection X-ray fluorescence (TXRF) determination is established for trace element determination of Fe, Cu, Zn, Se and Pt in human serum and of Cu and Zn in homogenized brain samples. A new method of spectrometer sensitivity calibration using spiked matrices with known amounts of trace elements is tested against established methods of matrix matching as well as internal element addition. The analytical results with the proposed procedure are compared to a certified international standard and to values with Atomic Absorption Spectrometry (AAS) obtaining analytical results of comparable accuracy and precision. The method is adequate for routine clinical analysis as it has the advantages of requiring very small amounts of material and simple preparations, which avoids the chemical digestion stage.     

Optimization of the quantitative direct solid total-reflection X-ray fluorescence analysis of glass microspheres functionalized with Zr organometallic compounds

Quantitative determination of Zr in the system constituted by quartz microspheres functionalized with two kinds of organometallic compounds has been studied due to the importance of the correct quantization of the Zr from a catalytic point of view. Two parallel approximations were done, i.e. acid leaching and direct solid quantization. To validate the acid leaching TXRF measures, ICP-MS analysis were carried out. The results obtained by means of the optimization of the quantitative direct solid procedure show that, with a previous particle size distribution modification, TXRF obtain the same analytical results as ICP-MS and TXRF by acid leaching way but without previous chemical acid manipulation. This fact implies an important improvement for the analysis time, reagents costs and analysis facility and it proves again the versatility of TXRF to solve analytical problems in an easy, quick and accurate way. Additionally and for the direct solid TXRF measurements, a deeper study was done to evaluate the intrinsic analytical parameters of the Zr TXRF analysis of this material. So, the influence of the particle size distributions (modified by means of a high power ultrasound probe) with respect to uncertainty and detection limits for Zr were developed. The main analytical conclusion was the strong correlation between the average particle sizes and the TXRF analytical parameters of Zr measurements, i.e. concentration, accuracy, uncertainty and detection limits.     

Research and Applications of Total Reflection X-ray Fluorescence Analyzer

Total reflection x-ray fluorescence (TXRF) is a fairly new element analysis method. The TXRF, due to using of total reflection, reduces greatly detection limits and thus places in a leading position in area of atomic spectroscopy. Comparing with AAS, ICP-OES,ICP-MS, NAA, SRXRF and PIXE, TXRF offers superiority combined in low detection limit, small sample mass,multielement simultaneous and non-destructive analysis,greater convenience and low cost.     

Accurate calibration of TXRF using microdroplet samples

TXRF has been applied in combination with VPD to the analysis of trace impurities in the native oxide layer of Si wafer surfaces down to the range of 10(8) atoms. cm(-2). Proper quantification of VPD/TXRF data requires calibration with microdroplet standard reference wafers. The precision of calibration function has been evaluated and found to allow quantification at a high level of 3 sigma confidence with microdroplet standard reference.     

Determination of copper,iron and zinc in spirituous beverages by total reflection X-ray fluorescence spectrometry

The concentration of copper in traditional homemade alcoholic distillates produced in Venezuela (Cocuy de Penca) were determined by total reflection X-ray fluorescence (TXRF) using vanadium as internal standard. The results were compared to those obtained by flame atomic absorption spectrometry (FAAS). Three preparative methods of addition of vanadium were compared: classical internal standard addition, ‘layer on layer’ internal standard addition and in situ addition of internal standard. The TXRF procedures were accurate and the precision was comparable to that obtained by the FAAS technique. Copper levels were above the maximum allowed limits for similar beverages. Zinc and iron in commercial and homemade distilled beverages were also analyzed by TXRF with in situ addition of internal standard demonstrating the usefulness of this technique for trace metal determination in distillates.     

Total-reflection X-ray fluorescence: An alternative tool for the analysis of magnetic ferrofluids

This work presents the first application of the total-reflection X-ray fluorescence (TXRF) to the compositional study of magnetic ferrofluids. With the aims of validating the best analytical conditions and also, limitations of the TXRF in the compositional study of these materials, an alternative empirical method, based in the use of angle-dependence TXRF (AD-TXRF) measurements, is proposed. Three kinds of ferromagnetic nanoparticles, with different morphologies, have been studied. The techniques of inductively coupled plasma mass spectrometry (ICP-MS) and inductively coupled plasma optical emission spectroscopy (ICP-OES) have been used to validate the TXRF results. In contrast with the plasma techniques, the developed TXRF procedure need not of previous chemical acid digestion. Additionally, two procedures of magnetic nanoparticles synthesis, co-precipitation and laser-pyrolysis, have been checked for the contaminants trace metals Zn, Mn and Cr. It has been found that the method of laser-pyrolysis produces nanoparticles of higher purity.     

Considerations on the ideal sample shape for Total Reflection X-ray Fluorescence Analysis

Total Reflection X-ray Fluorescence analysis (TXRF) is widely used in semiconductor industry for the analysis of silicon wafer surfaces. Typically an external standard is used for the calibration of the spectrometer. This is sensitive to errors in quantification. For small sample amounts the thin film approximation is valid, absorption effects of the exciting and the detected radiation are neglected and the relation between sample amount and fluorescence intensity is linear. For higher total sample amounts deviations from linearity have been observed (saturation effect). These deviations are one of the difficulties for external standard quantification.A theoretical determination of the ideal TXRF sample shape is content of the presented work with the aim to improve the calibration process and therefore the quantification.The fluorescence intensity emitted by different theoretical sample shapes was calculated, whereby several parameters have been varied (excitation energy, density, diameter/height ratio of the sample). It was investigated which sample shape leads to the highest fluorescence intensity and exhibits the lowest saturation effect. The comparison of the different sample shapes showed that the ring shape matches the ideal TXRF sample shape best.     

Applications of inductively coupled plasma mass spectrometry and laser ablation inductively coupled plasma mass spectrometry in materials science

Inductively coupled plasma mass spectrometry (ICP-MS) and laser ablation ICP-MS (LA-ICP-MS) have been applied as the most important inorganic mass spectrometric techniques having multielemental capability for the characterization of solid samples in materials science. ICP-MS is used for the sensitive determination of trace and ultratrace elements in digested solutions of solid samples or of process chemicals (ultrapure water, acids and organic solutions) for the semiconductor industry with detection limits down to sub-picogram per liter levels. Whereas ICP-MS on solid samples (e.g. high-purity ceramics) sometimes requires time-consuming sample preparation for its application in materials science, and the risk of contamination is a serious drawback, a fast, direct determination of trace elements in solid materials without any sample preparation by LA-ICP-MS is possible. The detection limits for the direct analysis of solid samples by LA-ICP-MS have been determined for many elements down to the nanogram per gram range. A deterioration of detection limits was observed for elements where interferences with polyatomic ions occur. The inherent interference problem can often be solved by applying a double-focusing sector field mass spectrometer at higher mass resolution or by collision-induced reactions of polyatomic ions with a collision gas using an ICP-MS fitted with collision cell. The main problem of LA-ICP-MS is quantification if no suitable standard reference materials with a similar matrix composition are available. The calibration problem in LA-ICP-MS can be solved using on-line solution-based calibration, and different procedures, such as external calibration and standard addition, have been discussed with respect to their application in materials science. The application of isotope dilution in solution-based calibration for trace metal determination in small amounts of noble metals has been developed as a new calibration strategy. This review discusses new analytical developments and possible applications of ICP-MS and LA-ICP-MS for the quantitative determination of trace elements and in surface analysis for materials science.     

Routine analysis of ultra pure water by ICP-MS in the low- and sub-ng/L level

The chemical analysis with inductively coupled plasma-mass spectrometry (ICP-MS) can help to examine the purity of ultra pure water (UPW) down to 10 part per trillion (ng/L) and lower. For a proper determination of a high number of samples per week the analysis must be divided into two parts: the routine analysis and the reference water analysis. The routine analysis is done by direct measurement of the ultra pure water samples. Applying a standard addition method under particular clean conditions, the reference water analysis leads to the definition of the accurate zero. A quick evaluation scheme is also presented for the reference water analysis. The method is tested for its fitness for application by examining LOD (for relevant element < 2 ng/L), reproducibility and linearity of calibration. The ICP-MS was optimized according to the methodology of G. Taguchi to improve reproducibility and LOD.     

Direct solid sampling electrothermal vaporization of alumina for analysis by inductively coupled plasma optical emission spectrometry

A procedure based on electrothermal evaporation (ETV) and inductively coupled plasma atomic emission spectrometry (ICP-OES) for the determination of trace impurities in Al₂O₃ powders without any sample pretreatment is presented. With the aid of matrix modifier the transport and the evaporation efficiency for refractory compounds could be increased by forming halides with a lower boiling point. As calibration is still a problem in direct solid sample analysis, different calibration approaches including the use of certified reference materials from NIST and standard addition of aqueous solutions of analytes were discussed. The accuracy obtained with calibration and with the standard addition method was shown up for the elements Ca, Fe, Ga, Mg, Mn, Na, Ni and V for the case of Al₂O₃ NIST standard reference material (SRM 699). The ETV–ICP-OES method was used for the analysis of Al₂O₃ powders with impurities in the low μg/g range and the results for the elements Ca, Fe, Ga, Mg, Mn, Na, Ni and V obtained with evaporation of discrete powder amounts with ETV–ICP-OES and slurry evaporation under the use of ultrasonic homogenization during the sampling and ETV–ICP-MS were shown to be in a good agreement.     

Calibration of reference materials for total-reflection X-ray fluorescence analysis by heavy ion backscattering spectrometry

Total-reflection X-ray fluorescence (TXRF) is widely used for the control of metallic contamination caused by surface preparation processes and silicon materials. At least three companies supply a variety of TXRF systems to the silicon integrated circuit (IC) community, and local calibration of these systems is required for their day to day operation. Differences in local calibration methods have become an issue in the exchange of information between IC manufacturers' different FABs (Fabrication Facility) and also between silicon suppliers and IC FABs. The question arises whether a universal set of fluorescence yield curves can be used by these different systems to scale system sensitivity from a single element calibration for calculation of elemental concentrations. This is emphasized by the variety of experimental conditions that are reported for TXRF data (e.g. different angles of incidence for the same X-ray source, different X-ray sources, etc.). It appears that an instrumental factor is required. We believe that heavy ion backscattering spectrometry (HIBS) provides a fundamental method of calibrating TXRF reference materials, and can be used in calculating this instrumental factor. In this paper we briefly describe the HIBS system at the Sandia National Laboratories HIBS User Facility and its application to the calibration of TXRF reference materials. We will compare HIBS and TXRF mapping capabilities and discuss the issues associated with the restrictions of some older TXRF sample stages. We will also discuss Motorola's cross-calibration of several TXRF systems using different elements as references.     

Application of vapor phase decomposition/total reflection X-ray fluorescence in the silicon semiconductor manufacturing environment

Total reflection X-ray fluorescence (TXRF), in combination with vapor phase decomposition (VPD), provides an efficient method for analyzing trace metal contaminants on silicon wafer surfaces. The progress made in applying these techniques to the analysis of silicon wafers in a wafer fabrication cleanroom environment is reported. Methods of standardization are presented, including the preparation and characterization of VPD standards. While the VPD wafer preparation process increases the sensitivity of the TXRF measurement by at least one order of magnitude, inherent uncertainties associated with the VPD technique itself are apparent. Correlation studies between VPD/TXRF and VPD/inductively coupled plasma mass spectrometry (ICP-MS) are presented.     

Total reflection X-ray fluorescence analysis with chemical microchip

A chemical microchip, which has a flat region on the surface, was recently designed for total reflection X-ray fluorescence (TXRF) analysis. A sample solution was introduced from an inlet by a microsyringe and flowed into a microchannel. Finally it overflowed from the well-type microchannel on the flat region. The sample solution on this region was dried, and then measured by TXRF. The TXRF spectra could be measured with a low background level. This preliminary result indicated that the edge of the well-type channel would not cause a serious problem for TXRF analysis. In addition, a good linear relationship was obtained for Zn Kα in Zn standard solution. This suggests that quantitative analysis by TXRF is feasible in combination with a chemical microchip.     

Quo Vadis total reflection X-ray fluorescence?

The multielement trace analytical method ‘total reflection X-ray fluorescence’ (TXRF) has become a successfully established method in the semiconductor industry, particularly, in the ultra trace element analysis of silicon wafer surfaces. TXRF applications can fulfill general industrial requirements on daily routine of monitoring wafer cleanliness up to 300 mm diameter under cleanroom conditions. Nowadays, TXRF and hyphenated TXRF methods such as ‘vapor phase decomposition (VPD)-TXRF’, i.e. TXRF with a preceding surface and acid digestion and preconcentration procedure, are automated routine techniques (‘wafer surface preparation system’, WSPS). A linear range from 10⁸ to 10¹⁴ [atoms/cm²] for some elements is regularly controlled. Instrument uptime is higher than 90%. The method is not tedious and can automatically be operated for 24 h/7 days. Elements such as S, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, As, Br, Sn, Sb, Ba and Pb are included in the software for standard peak search. The detection limits of recovered elements are between 1×10¹¹ and 1×10⁷ [atoms/cm²] depending upon X-ray excitation energy and the element of interest. For the determination of low Z elements, i.e. Na, Al and Mg, TXRF has also been extended but its implementation for routine analysis needs further research. At present, VPD-TXRF determination of light elements is viable in a range of 10⁹ [atoms/cm²]. Novel detectors such as silicon drift detectors (SDD) with an active area of 5 mm², 10 mm² or 20 mm², respectively, and multi-array detectors forming up to 70 mm² are commercially available. The first SDD with 100 mm² (!) area and integrated backside FET is working under laboratory conditions. Applications of and comparison with ICP-MS, HR-ICP-MS and SR-TXRF, an extension of TXRF capabilities with an extremely powerful energy source, are also reported.     

Investigation of element distribution and homogeneity of TXRF samples using SR-micro-XRF to validate the use of an internal standard and improve external standard quantification

Total reflection X-ray fluorescence analysis (TXRF) offers a nondestructive qualitative and quantitative analysis of trace elements. Due to its outstanding properties TXRF is widely used in the semiconductor industry for the analysis of silicon wafer surfaces and in the chemical analysis of liquid samples. Two problems occur in quantification: the large statistical uncertainty in wafer surface analysis and the validity of using an internal standard in chemical analysis. In general TXRF is known to allow for linear calibration. For small sample amounts (low nanogram (ng) region) the thin film approximation is valid neglecting absorption effects of the exciting and the detected radiation. For higher total amounts of samples deviations from the linear relation between fluorescence intensity and sample amount can be observed. This could be caused by the sample itself because inhomogeneities and different sample shapes can lead to differences of the emitted fluorescence intensities and high statistical errors. The aim of the study was to investigate the elemental distribution inside a sample. Single and multi-element samples were investigated with Synchrotron-radiation-induced micro X-ray Fluorescence Analysis (SR-μ-XRF) and with an optical microscope. It could be proven that the microscope images are all based on the investigated elements. This allows the determination of the sample shape and potential inhomogeneities using only light microscope images. For the multi-element samples, it was furthermore shown that the elemental distribution inside the samples is homogeneous. This justifies internal standard quantification.     

Nanoliter deposition unit for pipetting droplets of small volumes for Total Reflection X-ray Fluorescence applications

A nanoliter droplet deposition unit was developed and characterized for application of sample preparation in TXRF. The droplets produced on quartz reflectors as well as on wafers show a good reproducibility, also the accuracy of the pipetted volume could be proved by a quantitative TXRF analysis using an external standard. The samples were found to be independent of rotation of the sample carrier. Angle scans showed droplet residue behavior, and the fluorescence signal is relatively invariant of the angle of incidence below the critical angle, which is useful for producing standards for external calibration for semiconductor surface contamination measurements by TXRF. Further it could be demonstrated that the nanoliter deposition unit is perfectly able to produce patterns of samples for applications like the quantification of aerosols collected by impactors.     

Total-reflection X-ray fluorescence analysis for semiconductor process characterization

Semiconductor process characterization techniques based on total-reflection X-ray fluorescence (TXRF) analysis are reviewed and discussed. One of the most critical factors in obtaining reliable determinations by TXRF is the reliability of the standard samples that are used. Conventional physisorption standard samples such as spin coat wafers have two potential drawbacks: reproducibility of depth profile and stability. A method of chemisorption called ‘immersion in alkaline hydrogen peroxide solution (IAP)’ was proposed that provides answers to these two problems. IAP standard samples were used to experimentally examine three methods of TXRF application: Straight-TXRF, VPD-TXRF, and Sweeping-TXRF. In the application of Straight-TXRF, the linearity of Cu at a level of 10⁹ atoms cm⁻² is examined. In the application of VPD-TXRF, test results of VPD-TXRF for both transition metals and light elements are shown. Finally, a new measurement protocol called Sweeping-TXRF is proposed to conduct whole-surface analysis without chemical preconcentration.