Luminescence of impurity-bound excitons in corundum

The luminescence characteristics of M ³⁺: Al₂O₃ crystals, where M ³⁺ stands for an isoelectronic cation impurity with a filled electron shell, namely, Sc³⁺, Y³⁺, or La³⁺, were studied. The luminescence of excitons bound (BE) to these impurities was detected. The position of the BE energy states at the long-wavelength absorption edge as a function of the M ³⁺ ionic radius was established. The energies of the long-wavelength BE creation threshold and of the maximum of the BE luminescence band were approximated empirically by third-order polynomials of the Toyozawa polynomial type, which describes electron-phonon interaction. The energy and spatial structure of the BE was found to be similar to that of a self-trapped exciton (STE). The BE and STE states are separated by an energy barrier, and energy transfer from the STE to BE is frozen at low temperatures.     

Luminescence spectroscopy of excitons and antisite defects in Lu3Al5O12 single crystals and single-crystal films

The nature of the intrinsic luminescence of the lutetium aluminum garnet Lu₃Al₅O₁₂ (LuAG) has been analyzed on the basis of time-resolved spectral kinetic investigations upon excitation of two model objects, LuAG single crystals and single-crystal films, by pulsed X-ray and synchrotron radiations. Due to the differences in the mechanisms and methods of crystallization, these objects are characterized by significantly different concentrations of Lu_Al antisite defects. The energy structure of luminescence centers in LuAG single crystals (self-trapped excitons (STEs), excitons localized near antisite defects, and Lu_Al antisite defects) has been established. For single-crystal LuAG films, grown by liquid-phase epitaxy from a Pb-containing flux, the energy parameters of the following luminescence centers have been determined: STEs in regular (unperturbed by the presence of antisite defects) sites of the garnet lattice and excitons localized near Pb²⁺ ions. The structure of the luminescence centers, related to the background emission of impurity Pb²⁺ ions, has also been established in the UV and visible ranges. It is suggested that, in contrast to the two-halide hole self-trapping, a self-trapped state similar to STEs in simple oxides (Al₂O₃, Y₂O₃) is formed in LuAG; this state is formed by self-trapped holes in the form of singly charged O^? ions and electrons localized at excited levels of Lu³⁺ cations.     

Luminescence study of self-trapped excitons in CdMoO4

Luminescence properties of CdMoO₄ crystals have been investigated in a wide temperature range of T=5–300 K. The luminescence-excitation spectra are examined by using synchrotron radiation as a light source. A broad structureless emission band appears with a maximum at nearly 550 nm when excited with photons in the fundamental absorption region (<350 nm) at T=5 K. This luminescence is ascribed to a radiative transition from the triplet state of a self-trapped exciton (STE) located on a (MoO₄)^2? complex anion. Time-resolved luminescence spectra are also measured under the excitation with 266 nm light from a Nd:YAG laser. It is confirmed that triplet luminescence consists of three emission bands with different decay times. Such composite nature is explained in terms of a Jahn–Teller splitting of the triplet STE state. The triplet luminescence at 550 nm is found to be greatly polarized in the direction along the crystallographic c axis at low temperatures, but change the degree of polarization from positive to negative at T>180 K. This remarkable polarization is accounted for by introducing further symmetry lowering of tetrahedral (MoO₄)^2? ions due to a uniaxial crystal field, in addition to the Jahn–Teller distortion. Furthermore, weak luminescence from a singlet state locating above the triplet state is time-resolved just after the pulse excitation, with a polarization parallel to the c axis. The excited sublevels of STEs responsible for CdMoO₄ luminescence are assigned on the basis of these experimental results and a group-theoretical consideration.     

Luminescence kinetics of dipolar excitons in circular traps

A detailed investigation of multiband superconductivity and Leggett’s mode in the Mg_1?x Al_xB₂ (0 ≤ x ≤ 0.45) system was carried out using tunneling and Andreev spectroscopy. Temperature dependences of superconducting gaps Δ_σ and Δ_π and their variation upon the degree of disorder and the Al concentration were studied. The dependence of the Leggett’s mode energy ε₀ upon the values of the gaps Δ_σ and Δ_π has been derived.     

Optical absorption in cobalt-containing single-crystal epitaxial films of gadolinium gallium garnets

Cobalt-containing single-crystal garnet films are grown by liquid-phase epitaxy from supercooled PbO-B₂O₃-and Bi₂O₃-B₂O₃-based solution melts on Gd₃Ga₅O₁₂ substrates. It is shown that cobalt in the films is in a trivalent state. Upon introduction of GeO₂ into the initial solution melt, cobalt transforms into a bivalent state. It is revealed that the absorption spectrum of the grown films exhibits two broad bands in the wavelength ranges 450–800 and 900–1800 nm. Each of these bands contains three components. The spin-orbit splitting of the observed bands is determined.     

Luminescence line shape of free excitons in pure Ge

We report luminescence experiments performed in pure Ge at low temperature. Taking into account the splitting of the ground state of free excitons in this material, we show that their emission line shape is subject to a Gaussian broadening which seems to be due to the phonon lifetime. From this study, we deduce new values of the binding energy of electron-hole drops in Ge and Si which are respectively -2 and -5.6meV.     

Luminescence of excitons in slightly asymmetric double quantum wells

We report the first studies of exciton luminescence spectra from asymmetric double quantum wells (DQWs) of very similar width. The DQWs were of GaAs/AlGaAs and the differences in widths of the coupled wells were one or two monolayers. The coupled direct and indirect exciton states anticross with a resonance splitting of 1.33 meV. An additional luminescence line appearing at low temperatures is identified as a localized indirect exciton. Fiz. Tverd. Tela (St. Petersburg) 39, 735–739 (April 1997)     

Luminescence of bound excitons in NaI and RbI crystals

X-ray induced luminescence spectra were for the first time investigated at 4.2–100 K in the vicinity of fundamental absorption of NaI crystals cleaved in liquid helium. Besides the luminescence of the free exciton and its LO replicas an additional band due to radiative annihilation of bound excitons appears in NaI crystals, as was earlier observed in RbI crystals. The obtained value of the binding energy of excitons is 50 and 60 meV for NaI and RbI, respectively. The nature of the shallow trap in the crystals of wide-gap insulators is discussed.     

Luminescence of mercurylike impurities in single-crystal CdWO4 compounds

The processes of crystallization by the method of liquid epitaxy are studied for the first time for single-crystal films of CdWO₄ doped with the mercurylike ions Bi³⁺ and Pb²⁺, which can be used as thin-film components of combined scintillators for monitoring α- and β-activities. It is shown that in comparison with their solidcrystal analogs, the special features of these films consist in a longwave shift of the integral luminescence spectrum that is caused by high concentrations of the radiating complexes (V_Cd-WO₆) with hv_max=2.05–2.15 eV and the “distorted” complexes (WO₆)^* in them. It is found that in the case of luminescence of single-crystal films CdWO₄:Pb, radiation of mercurylike centers (PbO₆) prevails with hv_max=2.87 eV, while in luminescence of CdWO4, radiation of centers (BiO₆) with hv_max=2.16 eV and of complexes (V_Cd-WO₆). Institute of Applied Physics, Iv. Franko Lvov State University, 49, General Chuprynka St., Lvov, 290044, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 2, pp. 211–215, March–April, 1998.     

Luminescence lineshape of free excitons and electron-hole drops in Si

We study experimentally and theoretically the lineshape of the TO-LO and TA phonon assisted luminescence of free excitons and electron-hole drops in Si. We show that, in the case of the TA replica, the appropriate electron-phonon matrix element should be taken k-dependent, contrary to previous investigations.     

Luminescence of self-trapped excitons in calcium fluoride under pulsed electron irradiation

Time-resolved pulsed spectroscopy was used to measure the luminescence spectra of calcium fluoride. Characteristic features of the luminescence of self-trapped excitons are discussed. It is shown that various configurations of self-trapped excitons incorporating hole nuclei of a more complex structure, may be formed in CaF₂ crystals. Fiz. Tverd. Tela (St. Petersburg) 40, 1226–1227 (July 1998)     

Luminescence of germanate garnets with terbium on dodecahedral and octahedral lattice sites

{Ca(Tb)}₃Ga₂Ge₃O₁₂ and Sr₃[Y(Tb)]₂Ge₃O₁₂ garnets provide a cubic lattice with trivalent terbium, a luminescent rare earth, in dodecahedral (8 oxygen neighbors) and in octahedral (6 oxygen neighbors) sites, respectively. In the materials examined, Tb³⁺ in octahedral sites has a narrower fluorescence emission spectrum, higher luminescence efficiency and a longer lifetime than in dodecahedral sites. The luminescence properties and the unit cell size of the Ca₃Y₂Ge₃O₁₂ garnet, where Tb³⁺ is expected to be located on octahedral sites, are between those of the CaGa and SrY garnets. All these garnets are phosphorescent. On the basis of the variation with temperature of the phosphorescence decay law, it is proposed that the radiative electron-hole recombination process proceeds via a tunneling mechanism at temperatures below the thermal glow peaks, and via a free carrier diffusion mechanism at temperatures above the thermal glow peaks. All three Tb³⁺-doped germanate garnets have sufficiently high efficiency and persistence under electron beam excitation to be suitable for practical phosphor applications. The strontium yttrium germanate-Tb material has a cathodoluminescence decay time nearly three times that of the commercial P53 garnet phosphor.     

Luminescence of excitons and antisite defects in the phosphors based on garnet compounds

Intrinsic emission (excitons, anti-site defects (AD)) of oxides with garnet structure has been analysed by means of investigation of the time resolved luminescence and decay kinetic spectra under excitation by the synchrotron and X-ray radiation at 10–300 K of the model objects: undoped single crystals and single crystalline films of Y₃Al₅O₁₂ and Lu₃Al₅O₁₂ garnets which are characterised by the significant differences in concentrations of AD Y_Al³⁺ and Lu_Al³⁺-types as analogs of cation isoelectronic impurities.     

Scattering of excitons by excitons in semiconducting quantum well structures

We have theoretically investigated the scattering of excitons by excitons in a two-dimensional semiconducting quantum well system. The scattering cross sections have been calculated using the Born approximation for both the elastic and inelastic scattering of the excitons by excitons. The threshold for inelastic scattering is increased over the value in a bulk semiconductor because of the enhancement of the exciton binding energy by its confinement. The behavior of the scattering cross section as a function of the energy of relative motion of the excitons is different than in the bulk and the cross section is a more sensitive function of the ratio of the electron and hole masses than in the bulk.     

Charged walls in implanted garnets

The domain structure around non-implanted discs in implanted garnets has been investigated as a function of the strength of in-plane fields, H_| is in a hard direction, the observed domain structures can be explained by the theory of Shir and Lin [14]. When H_| is in easy direction or at 30° to it, charged walls are still present for values of H_| for which the theory predicts saturation of the implanted layer. This results is attributed to demagnetizing effects. The dependence of the length of charged walls on the diameter of non-implanted discs and on H_| has been studied.     

Heat capacity of rare-earth cuprates,orthovanadates, and aluminum garnets,gallium garnets,and iron garnets

Physics of the Solid State - The correlation between the heat capacities of rare-earth cuprates, orthovanadates, and garnets with ionic radius R 3+ has been analyzed. It has been shown that the...