量子阱微腔环型半导体激光器

报道了用纳米制作技术,实现了InGaAs/InGaAsP环型微腔激光器.激光器的直径为3μm～20μm,环的宽度为0.4μm～3μm,环的厚度为190nm.其激射峰值波长为1403nm.     

掺Nd3+玻璃微球发射光谱研究

采用粉末喷烧法制备了掺Nd^3 高折射率TiBa玻璃微球,主要成分为TiO2,BaO和SiO2,微球直径在30μm左右。在带有显微镜的光谱仪上,用514nm激光照射微球的边缘,测量了它们的发射光谱,观察到了微球腔效应导致的光谱结构共振。在较低泵浦阈值(2mW)下,获得了Nd^3 的激射发光。利用光学微腔理论讨论了玻璃微球荧光光谱中的形貌共振,实验结果与计算结果相符。     

石英玻璃微球吸收光谱上的结构共振

通过CO2激光器熔融不同直径的熔锥光纤以得到相应直径的石英玻璃微球,利用此微球和熔锥光纤,构造了球微腔耦合系统。实验中利用光腰直径为3.1μm的熔锥光纤与直径为143.1μm的石英玻璃微球进行耦合,通过最大分辨力为1pm的可调谐半导体激光器对该耦合系统进行光谱扫描,发现石英玻璃微球的吸收光谱中出现分立的结构共振峰。利用光学微球腔理论讨论了石英玻璃微球吸收光谱中的结构共振,并用米氏散射理论公式对一阶TE模共振峰的位置以及它们的间隔进行了计算,共振峰位置实验结果与理论结果的误差仅为0.03%,表明实验与计算结果相符。     

无源Ge_(28)Sb_(12)Se_(60)硫系玻璃微球谐振腔的制备及其光学回廊模式表征

为了对硫系玻璃微球谐振腔在中短红外波段的光学回廊模式进行理论研究和实验表征,用熔融淬冷法制备了组分为Ge28Sb12Se60的无砷环保型硫系玻璃,并在此基础上采用漂浮粉末熔融法批量制备出直径分布为50~200μm的微球谐振腔.在显微镜下挑选出直径分别为112.01μm和57.63μm的一大一小两颗微球与自制石英微纳光纤锥进行近场耦合实验,以窄带宽可调谐激光器为泵浦源测试此耦合系统在1 530~1 560nm波段的光谱.光谱中明显观测到由微球回廊模式谐振引起的等间距分布的光谱吸收峰.小球、大球的吸收峰间距分别为5.22nm和2.60nm,与米氏散射理论计算得出的一阶TE回廊模谐振峰间距基本相符.实验结果表明新型Ge28Sb12Se60硫系玻璃有望在红外微球光子器件如窄带滤波器、微球喇曼激光器、高灵敏度传感器等领域获得重要应用.     

基于光纤激光器泵浦的高功率准连续Ho∶YLF激光器

2μm激光器作为中波红外固体激光器的泵浦源方案之一,由于可以获得较高的中波红外激光输出,因此逐渐得到重视。设计了一种基于1 940nm光纤激光器泵浦的高平均功率准连续Ho∶YLF激光器,并对其进行了实验研究,表明在Ho离子掺杂浓度0.5%、晶体长度35mm、晶体控温20℃时,采用双棒串接、平凹腔L型结构获得了36 W的准连续2.067μm激光输出,其最高光光转换效率为51.4%,重复频率20kHz,脉冲宽度121ns,谱线宽度小于3nm。实验结果验证了采用1 940nm光纤激光器泵浦作为泵浦Ho∶YLF获得高功率准连续2μm激光的可行性。     

2 μm单纵模激光频率短期不稳定度的测量

利用光纤延时自拍法对固体激光器输出激光频率的短期不稳定度进行了测量.Tm,Ho:YLF微片激光器具有毫瓦量级的单纵模、窄线宽的输出,实验测量了光纤延时长度为500 m下,积分时间为2 ms,4 ms,40 ms,100ms的拍频信号.利用自拍频法获得了光纤延时长度为100 m,200 m,300 m,400 m,500 m,对应的时间延时长度为0.5μs,1μs,1.5μs,2μs,2.5μs下的输出激光的自拍频信号,得出单频激光器的频率不稳定度为1.48 kHz/μs,最后对激光频率小稳定度与激光线宽的关系进行了讨论.     

808 nm LD激发下高折射率差光纤锥-硫卤微球耦合系统的荧光回廊模

用熔融淬冷法制备了0.5wt.%掺杂Nd3+:75GeS2-15Ga2S3-0CsI(0.5wt.%Nd-GGSI)硫卤玻璃.在此基础上以玻璃粉料漂浮熔融法制备出粒径为50~300μm高折射率(n≈2.1)玻璃微球,并在显微镜下选出表面质量高的硫卤微球用于后续实验.将火焰法拉制出的直径1~2μm间的双锥形石英微纳光纤与硫系微球进行近场耦合.相位匹配条件下测试结果表明光纤锥倏逝场将激发球内径向高阶回音壁模式.实验测量了在808nm LD激光泵浦下直径110μm微球的荧光光谱特性,结果表明:掺Nd3+硫卤微球在输出端1 075nm波段附近产生了等间距分布的荧光回音壁模式的光学谐振,共振峰间隔为1.80nm.实验结果与微球腔回音壁模式谐振的理论模型有较高的符合度.     

CLR-2二极管泵浦单频Tm,Ho:YAG/Tm:YAG激光器

CLR光子公司研制了一种新型固体激光器——连续波二极管泵浦Tm,Ho∶YAG激光器。据说,这种激光器是在市场上销售的首批二极管泵浦单频2.1μm激光器。 CLR-2的特点是超稳定有效激光二极管泵浦;Tm,Ho∶YAG激光器在2.1μm波段工作对人限安全(Tm∶YAG激光器在2.02μm波段工作);从Tm,Ho∶YAG的2088至2100nm     

Er3+掺杂硫系玻璃微球在980nm激光泵浦下的荧光特性

采用玻璃粉料高温漂浮熔融法制备了0.9%Er₂S₃（质量分数）：75%GeS₂-15%Ga₂S₃-10%CsI（摩尔分数）硫系玻璃微球,并用熔融拉锥法制备了锥腰直径为2.31 μm的石英光纤锥。将其与直径119 μm的硫系微球进行耦合,在980 nm 激光泵浦下获得了微球中与Er³⁺：⁴I_13/2→⁴I_15/2跃迁对应的1.54 μm处的荧光光谱。分析了微球和块状玻璃荧光光谱差异的原因,并用Mie散射理论公式对微球荧光光谱共振峰间隔进行了计算。共振峰间隔实验结果与理论计算误差最小仅为0.05%,验证了理论分析的正确性。最后,讨论了微球峰值间隔与泵浦功率的关系,排除了泵浦功率对共振峰间隔的影响。     

基于石墨烯的宽带可饱和吸收体的制备及其在激光器中的应用

将石墨烯作为宽带可饱和吸收体分别应用在1.06μm Nd∶YAG固体激光器、2μm Tm∶YAP固体激光器以及1.55μm掺铒全光纤激光中.石墨烯采用化学汽相沉积法制备,以乙炔作为碳源,25μm厚的铜箔作为生长基体和催化剂,H2为载气,Ar为辅助气体,在常压、1 000℃高温条件下进行生长.1.06μm Nd∶YAG固体激光器实验中,采用直线型侧面泵浦腔型结构,当输出功率为10W时,得到了重复频率为360kHz,脉冲宽度240ns的最短脉冲输出,其单脉冲能量为27μJ,峰值功率为115.7W;2μm Tm∶YAP固体激光器实验中,使用中心波长在795nm附近的半导体激光器作为泵浦源,采用10%透过率的输出镜获得了脉宽为1.4μs的最窄调Q脉冲;环形腔1.55μm掺铒全光纤激光器实验中,利用1.25m长的高掺铒光纤作为增益光纤,当泵浦功率为100mW时,输出功率为10mW,获得了脉冲宽度314ps的稳定被动连续锁模脉冲,脉冲重复频率为20MHz并验证了同次制备的石墨烯的宽带可饱和吸收特性.     

半导体微碟激光器设计原理与工艺制作

用经典量子电动力学理论初步研究了半导体碟型微腔激光器的设计原理，采用光刻、反应离子刻蚀和选择化学腐蚀等现代微加工技术制备出抽运阈值功率很低用品质因数很高的低温光抽运InGaAs/InGaAsP多量子阱微碟激光器。这种激光器制作工艺简单，对有效光子状态密度调制较大，是比较理想的半导体微腔激光器。     

Optically pumped InGaN/GaN MQW lift-off lasers grown on silicon substrates

Chemical etching and removal of the silicon substrate was used for the creation of optically pumped lift-off InGaN/GaN multiple quantum well (MQW) lasers from heterostructures grown on silicon substrate by MOVPE. Luminescence and laser properties of these heterostructures on silicon substrates as well as those of MQWs lifted-off from their substrate by chemical etching were investigated. The lowest value of the lasing threshold of the lift-off lasers at room temperature was about 205 kW/cm² for a laser wavelength of 463 nm and about 360 kW/cm² for a wavelength of 475 nm. It was shown theoretically that the reduction of internal losses, caused by the absence of absorption in the substrate (resulting from its removal) is most significant for the high order modes having lower values of mirror losses and can lead to a 50% reduction of the threshold (or material gain in InGaN necessary to achieve the threshold).     

Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures

The emissivity of unstrained quantum-dimensional InP/AlInAs nanostructures and their lasing properties in microdisk cavities prepared by wet etching have been studied. For as-prepared structures, it has been found that they radiate owing to quantum-dimensional InP islands 50–300 nm in diameter. At temperatures below 160 K, whispering gallery modes have been observed in the microdisks. Experimental data on the PL intensity for microcavity modes versus the pump power, which were obtained at liquid helium temperature, have made it possible to find the lasing threshold, 50 W/cm². The half-width of the laser line at above-threshold powers equals 0.06 nm, which corresponds to a Q factor of 15 000.     

Powerful solid-state transversely diode-pumped YAG: Nd lasers with improved radiation quality

YAG: Nd lasers with transverse diode pumping of a cylindrical active (lasing) element are developed and studied. Pumping is carried out with continuous-wave (cw) laser diode array modules. At pump powers of 500, 820, and 1400 W, the output powers of the lasers operating in the multimodal regime are, respectively, 150, 350, and 500 W. The optical efficiency exceeds 30%. In the case of an unstable resonator operating in the negative branch of the stability diagram, the laser power equals 320 W with a beam divergence only twice as large as the diffraction limit. The design of a YAG: Nd laser pumped with pulsed-periodic laser diode array modules is presented. The total pump energy is 5 J, and the width and repetition rate of pulses are, respectively, 250 μs and 100 Hz.     

Whispering gallery microcavity lasers

Whispering gallery mode (WGM) optical microresonators have attracted intense interests in the past decades. The combination of high quality factors (Q) and small mode volumes of modes in WGM resonators significantly enhances the light‐matter interactions, making them excellent cavities for achieving low threshold and narrow linewidth lasers. In this Review, the progress in WGM microcavity lasers is summarized, and the laser performance considering resonator geometries and materials as well as lasing mechanisms is discussed. Label‐free detection using WGM resonators has emerged as highly sensitive detection schemes. However, the resolution is mainly limited by the cavity Q factor which determines the mode linewidth. Microcavity lasers, due to their narrow laser spectral width, could greatly improve the detection resolution. Some recent developments in sensing using microcavity lasers are discussed.     

钛宝石泵浦的Yb:YAG晶体的激光性能

测量了Yb:YAG晶体的光谱特性,用Ar⁺离子泵浦钛宝石激光器作为泵浦源泵浦Yb:YAG晶体,采用平平腔设计,当输出耦合镜T_1.053μm=4.26%,泵浦功率为1410mW时,得到320mW1.053μm的高效CW激光输出,斜率效率为54%,外推阈值功率为203mW。     

Heterogeneous integration of InGaAsP microdisk laser on a silicon platform using optofluidic assembly

Heterogeneous integration of InGaAsP microdisk lasers on a silicon platform is demonstrated experimentally using an optofluidic assembly technique. The 200-nm-thick, 5- and 10-μm-diameter microdisk lasers are fabricated on InP and then released from the substrates. They are reassembled on a silicon platform using lateral-field optoelectronic tweezers (LOET). The assembled laser with 5-μm diameter exhibits a threshold pump power of 340 μW at room temperature under pulse condition. The heterogeneously-integrated InGaAsP-on-Si microdisk laser could provide the much needed optical source for CMOS-based silicon photonics. The small footprint and low power consumption make them attractive for optical interconnect applications. The optofluidic assembly technique enables efficient use of the III–V epitaxial materials in silicon photonic integrated circuits.     

Raman lasing and other nonlinear effects based on ultrahigh-Q CaF2 optical resonator

The calcium fluoride (CaF₂) whispering gallery mode crystalline resonator is an excellent platform for nonlinear optical applications because of the decreasing in threshold caused by ultrahigh quality (Q) factor. In this paper, we achieved the observation of Raman lasing, first-order Raman comb, and second-order Raman lasing in a CaF₂ disk resonator with a diameter of 4.96 mm and an ultrahigh-Q of 8.43× 10⁸ at 1550-nm wavelength. We also observed thermal effects in CaF₂ disk resonator, and the threshold of thermo-optical oscillation is approximately coincident with Raman lasing, since the intracavity power increases rapidly when the power reaches the threshold, and higher input pump power results in longer thermal drift and higher Raman emission power. With a further increase in pump power, the optical frequency combs range is from 1520 nm to 1650 nm, with a wavelength interval of 4× m FSR. It is a promising candidate for optical communication, biological environment monitoring, spectral analysis, and microwave signal sources.     

窄线宽1064 nm光纤激光泵浦高效率中红外3.8μm MgO:PPLN光参量振荡器

采用放大1064?nm掺镱光纤激光器作为泵浦源,实现了中红外3.8?μm?MgO:PPLN光参量振荡(OPO)激光输出.在泵浦源中,采用分布式反馈激光器(DFB)作为种子源来实现光纤激光窄线宽的调制,实现线宽2.5?nm到0.1?nm的压缩,最大平均输出功率可达40?W.进一步对不同泵浦线宽条件下中红外3.8?μm?M...     

10-W-level diode-pumped compact 2.78 microm ZBLAN fiber laser

We report on >9W transverse-fundamental-mode CW output near 3 mum from a 4m heavily erbium-doped ZBLAN double-clad fiber laser pumped by a collimated 100 W 975 nm laser diode array. The pump threshold of the fiber laser was about 1W, and the slope efficiency was 21.3%. The peak wavelength of free running was about 2708 nm at low pump power and moved to around 2785 nm at high pump power. Output of 9W was obtained when the launched pump power was 42.8W. The output, however, fluctuated intensively like a pulsed laser, and the operation broke down with optical damage of the pumping end facet when the pump was increased beyond 42.8 W. Therefore, alleviation of the operation fluctuation, heat management, and strengthening the pumping fiber are crucial considerations for the stable operation of 10-W-level mid-IR ZBLAN fiber lasers.