X波段极低噪声低温放大器

介绍了X波段极低噪声低温放大器的研制。在≤15K的环境温度下,X波段100MHz带宽内,实测放大器的等效噪声温度:≤8.8K;增益:>36dB;带内起伏:<0.4dB;输入反射损耗:<-22dB;输出反射损耗:<-20dB。它的研制成功,将可以替代进口产品满足X波段低温接收机的研制需要。     

X波段宽带极低噪声低温放大器

介绍了8～9GHz极低噪声低温放大器的研制。在≤15K的工作温度下,实测放大器的主要性能指标如下:等效噪声温度≤7.9K;增益>31dB,带内起伏≤1dB;输入反射损耗<-21dB;输出反射损耗<-23dB。它的研制成功,实现了深空探测、天文观测等X波段宽带低温接收机的核心器件国产化。     

低温放大器极低噪声温度测试技术研究

概述了低温低噪声放大器噪声温度两种测试的方法,一种是可变负载温度测试方法,另一种是低温衰减器测试方法。对可变负载温度测试方法和低温衰减器测试方法进行了误差分析。给出了各种方法测试实例,且与国外低温低噪声放大器噪声温度测试指标进行对比,误差很小。     

低温低噪声放大器测试平台的结构设计

本文介绍了低温低噪声放大器的应用情况,以及确保它正常工作所需的结构设计方面的一些问题。     

S波段低温低噪声放大器技术研究

介绍了低温低噪声放大器使用的HEMT(高迁移率晶体管)器件噪声模型的建立,对HEMT用S参数和噪声参数讲行仿直,获取适合的模型.给出了实例,放大器在低温10K工作,增益≥30dB,噪声温度≤4K.     

Ku波段低温低噪声放大器设计

本文采用插指电容新结构设计了一个Ku波段低温低噪声放大器(LNA),并通过优化的封装工艺制备了放大器样品,分析了隔离器对LNA性能的影响.在77K温度下测试结果表明,放大器增益约10dB,噪声系数小于2.0dB,反射系数小于-17dB.     

低温放大器组装技术分析研究

本文分析了低温放大器中温度应力影响和质量隐患,从芯片和印制板贴装、引线键合和盒体封装三个方面对低温放大器装配工艺进行了研究,给出了低温放大器组装工艺的关键工序,提出了组装工艺改善方法,对低温放大器的组装技术具有一定参考作用。     

S波段低温低噪声放大器

中介绍了S波段低温低噪声放大器的研制.在15K左右的环境温度下,300MHz带宽内,实测放大器的等效噪声温度≤4.6K,增益≥35dB,增益平坦度≤1.0clB,输入、输出回波损耗≤-20dB.它已经成功运用于射电天文等领域.     

S波段低温低噪声放大器的研制

介绍了基于ADS仿真的低噪声放大器的设计与制作方法;重点研究了LNA的直流偏置、稳定性分析、匹配设计、版图制作和调试;提出了源级负反馈和栅极加并联阻抗的方法来实现了电路全频段稳定和低温正常工作。采用ATF-34143制作了中心频率在2.25的低噪声放大器,在77K温度下,该放大器带内输入输出驻波比小于1.2,增益达到23dB,噪声系数为0.24dB。     

低温低噪声放大器的发展概况及其结构设计综述

介绍了低温低噪声放大器的研制历史、现状及应用情况 ,举例分析了在该类放大器的结构设计中需要解决的关键技术 ,对军事和民用装备的有关领域有参考作用。     

低温接收机关键技术标准研究与制定

介绍了低温接收机产品结构、功能和用途。研究了低温接收机产品标准体系,提炼出低温接收机设计、测试和试验关键技术系列标准,阐述了关键技术标准的主要研究与制定内容。通过低温接收机关键技术标准研究与制定,可提高低温接收机产品的标准化水平,促进产品研制和生产质量提升。     

超导接收前端用制冷HEMT低噪放电控组件设计

超导接收前端以超导滤波器和高电子迁移率晶体管(HEMT)低温放大器构成核心微波电路,其HEMT放大器在低温下拥有极低的工作噪声,但对偏置供电的要求很高,只有在特定偏置下,系统才拥有最佳的工作稳定度、高增益和低噪声。本文针对多信道超导接收前端,设计了一种多通道、模块化,带程控通讯的超导接收前端用HEMT低噪放电控组件,为设备核心射频通道提供供电、切换和远程控制。其供电偏置可调、供电纹波≤3 mV,并提供多路TTL电平接口,支持RS485数据通讯控制,便于模块化安装,在超导接收前端分机中工作状况良好。     

Theory of noise in optical amplifiers

We show that the classical model of the amplifier noise can well describe the amplifier-noise characteristics and that the signalgain, the spontaneous emission factor, and the optical bandwidth are all the information necessary for analyzing the amplifier-noise characteristics. The accumulation of noise in the amplifier chain is also discussed in detail.     

一种低温接收机噪声分时注入的方法

提出一种低温接收机噪声分时注入方法,可以在线对接收机系统进行标定。可以有效地解决大气变化、地表噪声、链路增益变化等对系统定标照成的影响。该方案已应用在国内多台射电望远镜项目中,并获得较理想的效果。     

Model for noise processes in semiconductor laser amplifiers:

A model for the noise processes in a Fabry-Perot semiconductor laser amplifier is presented. This model is based on the application of perturbation techniques to the travelling-wave rate equations for the amplifier. The model includes the effects of end-facet reflections and the backwards-travelling wave into the amplifier. The noise power spectral densities for the intensity, electron density and phase noise are derived. The model can be applied to an arbitrary gain profile and does not require homogenization of the photon field over the length of the device.     

On the noise of high-transimpedance amplifiers for long-wavelength pulse OTDRs

Noise measurements on high-transimpedance amplifiers suitable for long-wavelength OTDRs give results higher than is predicted by normal noise models. Consequently, we have developed two useful techniques to measure independently the noise contribution of the JFET and the feedback resistor to the overall amplifier noise. p ]Our results show that the noise of the JFET is in accordance with an accurate theoretical model for such a device. In contrast, the noise from the feedback resistor is much higher than is predicted from the normal resistance-capacitance model for such a component. This increase results from the distributed nature of high-ohmic resistors. Our results indicate that both choice of resistor manufacturer and individual selection of a resistor from a specific manufacturer are warranted. By selecting a low-noise resistor we demonstrate a 500-M transimpedance amplifier with an input equivalent noise current of 13.8 pA. In comparison, the same amplifier with a noisy resistor had an input equivalent noise current of 23 pA. p ]We use our results to show that a reasonable value of the input equivalent noise current of a low-noise photodiode-amplifier combination is 20 pA.     

Phase noise measurement of high-power fiber amplifiers

We measure the phase fluctuation in a high-power fiber amplifier using a multi-dithering technique.Its fluctuation property is qualitatively analyzed by the power spectral density and integrated spectral density.Low frequency fluctuations caused by the environment are dominant in the phase fluctuations in an amplifier,whereas the high frequency components related to laser power affect the control bandwidth.The bandwidth requirement of the active phase-locking is calculated to be 300 Hz,670 Hz,1.6 kHz,and 3.9 kHz under the output power of 25,55,125,and 180 W,respectively.The approximately linear relationship between the control bandwidth and laser power needs to be further investigated.     

Temperature-dependent gain and noise in fiber Raman amplifiers

An experimental investigation of the temperature dependence of the gain and noise performance of a silica-fiber Raman amplifier is described. A decrease in the Raman scattering cross section in a fiber amplifier cooled from a temperature of 300 K to 77 K was measured and found to be in agreement with theoretical values. No difference between the Raman gain coefficients at these two temperatures was observed.