Chemical interactions in the layered system BC x N y /Ni(Cu)/Si, produced by CVD at high temperature

Layered samples Si(100)/C/Ni/BC(x)N(y) and Si(100)/C/Cu/BC(x)N(y) were produced by physical vapor deposition of a metal (Ni, Cu, resp.) and low-pressure chemical vapor deposition of the boron carbonitride on a Si(100) substrate. Between the Si and the Ni (Cu) and on the surface of the Ni (Cu) layer, thin carbon layers were deposited, as a diffusion barrier or as a protection against oxidation, respectively. Afterwards, the surface carbon layer was removed. As precursor, trimethylamine borane and, as an auxiliary gas, H(2) and NH(3) were used, respectively. The chemical compositions of the layers and of the interfaces in between were characterized by total-reflection X-ray fluorescence spectrometry combined with near-edge X-ray absorption fine-structure spectroscopy, X-ray photoelectron spectroscopy, and secondary ion mass spectrometry. The application of H(2) yielded the BC(x)N(y) compound whereas the use of NH(3) led to a mixture of h-BN and graphitic carbon. At the BC(x)N(y)/metal interface, metal borides could be identified. At the relatively high synthesis temperature of 700 °C, broad regions of Cu or Ni and Si were observed between the metal layer and the substrate Si.     

Effects of substrate on the melting behavior of Cd arachidate Langmuir–Blodgett films

Nineteen monolayered Cd arachidate films were deposited on float glass substrate coated with Si and Ni over-layers. Two layers have been chosen with very different surface free energies. Melting behavior of films were studied using variable temperature X-ray specular reflectivity and Fourier transform infrared spectroscopy measurements. In conformity with earlier studies, melting of the multilayer precede by a transition from distorted hexagonal to hexaticlike phase. However, the transition temperature to hexaticlike phase as well as the melting temperature depend significantly on the type of layer. Both the transition temperatures are higher for the multilayer deposited on Ni layer as compared to those for the film deposited on Si layer. These results can be understood in terms of different surface free energies of Ni and Si layers. Further, in case of Ni layer, transition to hexaticlike phase is relatively sharper. Even in the molten state there is a significant difference in the structure of the Cd arachidate film on two layers; packing density of molecules in molten state is lower in case of substrate with higher surface free energy. These results suggest that the surface free energy of substrate plays a significant role in melting behavior of Langmuir–Blodgett films.     

X-ray photoemission for probing charging/discharging dynamics

A novel technique is introduced for probing charging/discharging dynamics of dielectric materials in which X-ray photoemission data is recorded while the sample rod is subjected to +/-10.0 V square-wave pulses with varying frequencies in the range of 10(-3) to 10(3) Hz. For a clean silicon sample, the Si2p(Si(0)) peak appears at correspondingly -10.0 eV and +10.0 eV binding energy positions (20.0 eV difference) with no frequency dependence. However, the corresponding peak of the oxide (Si(4+)) appears with less than 20.0 eV difference and exhibits a strong frequency dependence due to charging of the oxide layer, which is faithfully reproduced by a theoretical model. In the simplest application of this technique, we show that the two O1s components can be assigned to SiO(x) and TiO(y) moeties by correlating their dynamical shifts to those of the Si2p and Ti2p peaks in a composite sample. Our pulsing technique turns the powerful X-ray photoemission into an even more powerful impedance spectrometer with an added advantage of chemical resolution and specificity.     

Water as buffer material for gold nanocluster growth

Water molecules adsorbed on SiO2/Si(100) at 140 K to form amorphous solid water (ASW) layers were utilized as a buffer for assisting the growth of gold nanoclusters. It was shown that the average height and diameter of the clusters deposited on the silicon oxide substrate following the buffer annealing/desorption increase as the buffer layer becomes thicker and as more gold is deposited. The clusters' height and diameter were determined by tapping mode AFM and high-resolution SEM imaging, respectively. Typical heights were between 0.5 and 4.5 nm, and the diameters were in the range of 3-9 nm for ASW layer thickness of 7-100 ML and gold deposition in the range of 0.2-1.2 A. The density of the clusters decreased from 65 x 10(10) to 8 x 10(10) cm (-2) in the same buffer layer thickness range. Significantly different morphology of the clusters is obtained when compared to those formed by direct deposition of gold on the silicon oxide surface and to those grown on top of Xe as buffer material.     

Mechanism and regioselectivity for the reactions of propylene oxide with X(100)-2x1 surfaces (X = C, Si, Ge): a density functional cluster model investigation

We have performed density functional cluster model calculations to explore the mechanism and regioselectivity for the reactions of propylene oxide with X(100)-2x1 surfaces (X = C, Si, and Ge). The computations reveal the following: (i) the reactions on Si(100) and Ge(100) are barrierless and highly exothermic; (ii) the reactions on X(100) (X = Si and Ge) are initiated by the formation of a dative-bonded precursor state followed by regioselective cleavage of the C2-O bond (C2 directly connected to the methyl-substituent) in propylene oxide, giving rise to a five-membered ring surface species; and (iii) the reaction on C(100), although highly exothermic, requires a large activation energy and would be kinetically forbidden at room temperature.     

The interfacial properties of MgCl(2) thin films grown on Si(111)7 x 7

Photoelectron spectroscopy with synchrotron radiation and low energy electron diffraction (LEED) were used in order to study the MgCl(2)Si(111) system. At submonolayer coverage of MgCl(2), a new LEED pattern was observed corresponding to a (sqr rt 3 x sqr rt 3)R30 degrees overlayer superimposed on the underlying reconstructed Si(111)7 x 7. The surface species at this stage are mainly molecular MgCl(2) and MgCl(x) (x<2) or MgO(x)Cl(y) attached to the Si substrate through Cl bridges coexisting with monodentate SiCl. The interfacial interaction becomes more pronounced when the submonolayer coverage is obtained by annealing thicker MgCl(2) layers, whereby desorption of molecular MgCl(2) is observed leaving on the nonreconstructed silicon surface an approximately 0.2 ML thick MgCl(x) layer which again forms the (sqr rt 3 x sqr rt 3 )R30 degrees superstructure.     

Depletion at solid/liquid interfaces: flowing hexadecane on functionalized surfaces

We present a neutron reflectivity study on interfaces in contact with flowing hexadecane, which is known to exhibit surface slip on functionalized solid surfaces. The single crystalline silicon substrates were either chemically cleaned Si(100) or Si(100) coated by octadecyl-trichlorosilane (OTS), which resulted in different interfacial energies. The liquid was sheared in situ and changes in reflectivity profiles were compared to the static case. For the OTS surface, the temperature dependence was also recorded. For both types of interfaces, density depletion of the liquid at the interface was observed. In the case of the bare Si substrate, shear load altered the structure of the depletion layer, whereas for the OTS covered surface no effect of shear was observed. Possible links between the depletion layer and surface slip are discussed. The results show that, in contrast to water, for hexadecane the enhancement of the depletion layer with temperature and interfacial energy reduces the amount of slip. Thus a density depletion cannot be the origin of surface slip in this system.     

Grazing incidence X-ray photoemission spectroscopy of SiO2 on Si

We have applied grazing incidence X-ray photoemission spectroscopy to the determination of the thickness of SiO₂ layers on Si, as well as surface carbon that is present. The measurements take advantage of the different optical constants of the layers. X-rays incident on the surface at grazing angle undergo total external reflection, where the fields in each layer are subject to highly non-linear changes as a function of incidence angle. X-ray photoemission excited by these fields gives information on atomic species, chemical state, and layer thickness. Simultaneous fits are made to the photoemission spectra in each layer. The method is illustrated for a thermally grown oxide layer and a native oxide on Si.     

Energy density analysis of cluster size dependence of surface-molecule interactions: H2, C2H2, C2H4, and CO adsorption onto Si(100)-(2x1) surface

Adsorption of H2, C2H2, C2H4, and CO onto a Si(100)-(2x1) surface has been treated theoretically using Si(12n - 3)H(8n + 4) (n = 1-4) clusters. The energy density analysis (EDA) proposed by Nakai has been adopted to examine surface-molecule interactions for different cluster sizes. EDA results for the largest model cluster Si45H36 have shown that the adsorption-induced energy density variation in Si atoms decays with distance from the adsorption site. Analysis of this decay, which can be carried out using the EDA technique, is important because it enables verification of the reliability of the model cluster used. In the cases of H2, C2H2, C2H4, and CO adsorption onto the Si(100)-(2x1) surface, it is found that at least a Si21H20 cluster is necessary to treat the surface-molecule interaction with chemical accuracy.     

Tin oxide dependence of the CO2 reduction efficiency on tin electrodes and enhanced activity for tin/tin oxide thin-film catalysts

The importance of tin oxide (SnO(x)) to the efficiency of CO(2) reduction on Sn was evaluated by comparing the activity of Sn electrodes that had been subjected to different pre-electrolysis treatments. In aqueous NaHCO(3) solution saturated with CO(2), a Sn electrode with a native SnO(x) layer exhibited potential-dependent CO(2) reduction activity consistent with previously reported activity. In contrast, an electrode etched to expose fresh Sn(0) surface exhibited higher overall current densities but almost exclusive H(2) evolution over the entire 0.5 V range of potentials examined. Subsequently, a thin-film catalyst was prepared by simultaneous electrodeposition of Sn(0) and SnO(x) on a Ti electrode. This catalyst exhibited up to 8-fold higher partial current density and 4-fold higher faradaic efficiency for CO(2) reduction than a Sn electrode with a native SnO(x) layer. Our results implicate the participation of SnO(x) in the CO(2) reduction pathway on Sn electrodes and suggest that metal/metal oxide composite materials are promising catalysts for sustainable fuel synthesis.     

Quantum Characterization of Some Cluster-Based Materials

Three kinds of cluster-based materials are prepared by evaporation and inert gas condensation method. Their structures and properties are examined by transmission electron microscopy, Raman scattering, STM/STS, optical spectroscopy, etc. Some important results are obtained: (1) surface phonon modes of quasi-free Si clusters are observed when Si clusters softly land onto the mother skeleton of the porous silicon and/or through grazing angle collisions with the walls of the pores; (2) very sharp peaks of conductance resonances are obtained when the STM tip is right on the top of the Au cluster deposited on the H-terminated silicon crystal; and (3) large blue shifts and photoluminescence from violet to orange with main peaks in the blue range are observed from Ge cluster-based nanofilms at an excitation wavelength of 370 nm. Mechanisms are discussed including the quantum confinement effect of the Ge cluster cores, radiation transition from oxygen difficiency centers in the oxide surface layers, and exciton confinement in the interfacial layers between the crystalline cores and the oxide shells.     

Yolk-shell Si/C composites with multiple Si nanoparticles encapsulated into double carbon shells as lithium-ion battery anodes

The conceptual design of yolk-shell structured Si/C composites is considered to be an effective way to improve the recyclability and conductivity of Si-based anode materials. Herein, a new type of yolk-shell structured Si/C composite(denoted as TSC-PDA-B) has been intelligently designed by rational engineering and precise control. In the novel structure, the multiple Si nanoparticles with small size are successfully encapsulated into the porous carbon shells with double layers benefiting from the strong etching effect of HF. The TSC-PDA-B product prepared is evaluated as anode materials for lithium-ion batteries(LIBs).The TSC-PDA-B product exhibits an excellent lithium storage performance with a high initial capacity of 2108 mAh g~(-1) at a current density of 100 mA g~(-1) and superior cycling performance of 1113 mAh g~(-1) over 200 cycles. The enhancement of lithium storage performance may be attributed to the construction of hybrid structure including small Si nanoparticles, high surface area, and double carbon shells, which can not only increase electrical conductivity and intimate electrical contact with Si nanoparticles, but also provide built-in buffer voids for Si nanoparticles to expand freely without damaging the carbon layer.The present findings can provide some scientific insights into the design and the application of advanced Si-based anode materials in energy storage fields.     

Complex investigation of multilayer nanostructure of a‐Si/SiO1.9 by probe and spectroscopic analysis techniques. Visualization of the band structure. Studying of the band structure of the suboxide border layers

This article describes an integrated approach to the study of multilayer nanostructures of a‐Si/SiO_1.9 as a potential model to study the influence of the effects arising at the interface of Si/SiO₂ under the influence of ionizing radiation. The results of the functional layers of amorphous silicon and silicon dioxide surface topology investigation have been disclosed. The possibility of application of a band gap contrast in electron probe studies by means of electron energy filtering during the detection process has been demonstrated. Changes in valence band and band gap through depth of the a‐Si/SiO_1.9 nanostructure have been registered. As part of the study, density of states of the a‐Si/SiO_1.9 multilayer nanostructures and depth distribution of surface suboxide layers of native oxide of amorphous silicon have been reconstructed using the determination of an effective mean free path of the electrons by the TPP2M algorithm in conjunction with PARXPS and REELS measurements. Copyright © 2015 John Wiley & Sons, Ltd.     

Control of Alq3 wetting layer thickness via substrate surface functionalization

The effects of substrate surface energy and vapor deposition rate on the initial growth of porous columnar tris(8-hydroxyquinoline)aluminum (Alq3) nanostructures were investigated. Alq3 nanostructures thermally evaporated onto as-supplied Si substrates bearing an oxide were observed to form a solid wetting layer, likely caused by an interfacial energy mismatch between the substrate and Alq3. Wetting layer thickness control is important for potential optoelectronic applications. A dramatic decrease in wetting layer thickness was achieved by depositing Alq3 onto alkyltrichlorosilane-derivatized Si/oxide substrates. Similar effects were noted with increasing deposition rates. These two effects enable tailoring of the wetting layer thickness.     

Density–depth profiles of an As‐implanted Si wafer studied by repeated planar sputter etching and total reflection x‐ray fluorescence analysis

The implantation of a high dose of high‐energy ions into an Si wafer causes amorphization of the original monocrystalline structure within a near‐surface layer. The in‐depth distribution of both Si atoms of the wafer and As ions implanted at a dose of 1 × 10¹⁷ ions cm^?2 and an energy of 100 keV is studied. A novel method combining a repeated planar and broad sputter etching with differential weighing, surface analysis by total reflection x‐ray fluorescence and Tolansky interferometry is used for this investigation. Different depth profiles are recorded on the nanometre scale for the concentration defined as the mole ratio of As and Si, for the mass density of the implanted layer and for the number density of As and Si. The results generally correspond with measurements of Rutherford backscattering spectrometry and only deviate when the assumptions made for the mass density do not fit well. An appropriate approach to this quantity involves the number density of implanted ions but, furthermore, considers a variation of the number density of Si atoms during implantation, especially for a high dose and high‐energy implantation. The variation can be taken into account by a factor γ, where γ > 1 indicates compression and γ < 1 indicates extension of the original crystalline structure. For the above mentioned implantation, γ is measured separately for each sublayer to obtain accurate depth profiles. Copyright © 2003 John Wiley & Sons, Ltd.     

Surface analytical characterization of oxide-free Si(100) wafer surfaces

Summary Wet-chemical cleaning procedures of Si(100) wafers are surface analytically characterized and compared. Hydrophobic surfaces show considerably less native oxides in comparison to hydrophilic surfaces.The growth of the oxide is determined as a function of exposure to air by means of XPS measurements. The chemically shifted Si2p XPS signal is utilized for the quantification of the growth kinetics.One hour after cleaning no chemically shifted Si2p XPS peak is discernible on the hydrophobic surfaces. Assuming homogeneous oxide growth, the detection limit of native oxides is estimated to be below 0.05 nm using an emission angle of 18° with respect to the wafer surface. The calculation of the oxide thickness from the chemically shifted and nonchemically shifted Si2p XPS peak intensities is carried out according to Finster and Schulze [1]. For more than a day after cleaning no surface oxides can be identified on the hydrophobic surfaces. The oxide growth kinetics is logarithmic. The very slow oxidation rate cannot be attributed to fluorine residues since no fluorine is seen by XPS. We explain the slow oxidation rate by a homogeneous hydrogen saturated Si(100) wafer surface.

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Oberflächenanalytische Charakterisierung oxidfreier Si(100)-Waferoberflächen

     

Density functional theory study of the geometry, energetics, and reconstruction process of Si111 surfaces

We report the structures and energies from first principles density functional calculations of 12 different reconstructed (111) surfaces of silicon, including the 3x3 to 9x9 dimer-adatom-stacking fault (DAS) structures. These calculations used the Perdew-Burke-Ernzerhof generalized gradient approximation of density functional theory and Gaussian basis functions. We considered fully periodic slabs of various thicknesses. We find that the most stable surface is the DAS 7x7 structure, with a surface energy of 1.044 eV/1x1 cell (1310 dyn/cm). To analyze the origins of the stability of these systems and to predict energetics for more complex, less-ordered systems, we develop a model in which the surface energy is partitioned into contributions from seven different types of atom environments. This analysis is used to predict the surface energy of larger DAS structures (including their asymptotic behavior for very large unit cells) and to study the energetics of the sequential size change (SSC) model proposed by Shimada and Tochihara for the observed dynamical reconstruction of the Si(111) 1x1 structure. We obtain an energy barrier at the 2x2 cell size and confirm that the 7x7 regular stage of the SSC model (corresponding to the DAS 7x7 reconstruction) provides the highest energy reduction per unit cell with respect to the unreconstructed Si111 1x1 surface.     

Molecular orientation and film morphology of pentacene on native silicon oxide surface

The growth morphology and mechanism of pentacene films on native Si oxide surface have been studied by using high-resolution electron energy loss spectroscopy (HREELS), X-ray diffraction (XRD), and atomic force microscopy (AFM). Despite the good agreement between our own and the reported XRD results, the previous XRD interpretation that the pentacene molecules are tilt-standing on the substrate cannot explain our HREELS data. The HREELS results show that a substantial portion of the first two layers of pentacene molecules are tilted-standing or randomly oriented, whereas the upper-layer molecules are mostly lying flat to the substrate. AFM reveals that the first two layers of molecules form a flat and smooth surface, but the upper layers show a rough terrace structure with a mean-square roughness equal to the average thickness (without counting the first two layers). This relationship is explained by a theoretical model which assumes the pentacene molecules to remain on a particular molecule layer after arrival. The observed film growth morphology may have significant implication on the performance of electronic devices based on pentacene thin films. A plausible explanation was proposed for the discrepancy between the HREELS-indicated and the XRD-derived molecular orientations.     

The in situ characterization and structuring of electrografted polyphenylene films on silicon surfaces. An AFM and XPS study

An atomic force microscope was used so as to structure by nanofriction films of polynitrophenylene electrografted on substrates of n-type silicon (100) with the native oxide on the top of the surface. AFM measurements of thin films thickness have been carried out in the electrolytic solution for different applied potentials during the electrografting. This investigation allows (i) to determine the relationship between the applied potential and the final thickness of electrografted polyphenylene films and (ii) to specify how the thin layers grow. XPS analysis confirmed the AFM observations on (i) the effective shaving of the grafted polymer chains under mechanical stress and (ii) the existence of a potential threshold for electrografting a polyphenylene film on silicon oxide surfaces. The presence of a residual film in the rubbed zone was attributed to stronger interactions between the first electrografted layer and the native oxide of silicon (through Si-C or/and Si-O-C bonds) than those insuring the cohesion of the multilayer (C-C and C-N bonds).     

Hafnium oxide and zirconium oxide atomic layer deposition: initial precursor and potential side-reaction product pathways with H/Si(100)-2 x 1

Hybrid density functional calculations have been carried out using cluster models of the H/Si(100)-2 x 1 surface to investigate the mechanistic details of the initial surface reactions occurring in the atomic layer deposition of hafnium and zirconium oxides (HfO2 and ZrO2). Reaction pathways involving the metal precursors ZrCl4, Zr(CH3)4, HfCl4, and Hf(CH3)4 have been examined. Pathways leading to the formation of a Zr-Si or Hf-Si linkage show a significant sensitivity to the identity of the leaving group, with chloride loss reactions being both kinetically and thermodynamically less favorable than reactions leading to the loss of a methyl group. The energetics of the Zr(CH3)4 and Hf(CH3)4 reactions are similar with an overall exothermicity of 0.3-0.4 eV and a classical barrier height of 1.1-1.2 eV. For the reaction between H2O and the H/Si(100)-2 x 1 surface, the activation energy and overall reaction enthalpy are 1.6 and -0.8 eV, respectively. Due to contamination, trace amounts of H2O may be encountered by metal precursors, leading to the formation of minor species that can lead to unanticipated side-reaction pathways. Such gas-phase reactions between the halogenated and alkylated metal precursors and H2O are exothermic with small or no reaction barriers, allowing for the possibility of metal precursor hydroxylation before the H/Si surface is encountered. Of the contaminant surface reaction pathways, the most kinetically favorable corresponds to the surface -OH deposition. Interestingly, for the hydroxylated metal precursors, a unique reaction pathway resulting in the direct formation of Si-O-Zr and Si-O-Hf linkages has been identified and found to be the most thermodynamically stable pathway available, being exothermic by approximately 1.0 eV.