Progress of pyrene-based organic semiconductor in organic field effect transistors

Thanks to the pure blue emitting, high planarity, electron rich and ease of chemical modification, pyrene has been thoroughly investigated for applications in organic electronics such as organic light emitting diodes (OLEDs), organic field effect transistors (OFETs), and organic solar cells (OSCs). Especially, great progresses have been made of pyrene-based organic semiconductors for OFETs in past decades. Due to the difference of molecular structure, pyrene-based organic semiconductors are divided into three categories, pyrene as terminal group, pyrene as center core and fused pyrene derivatives. This minireview gives a brief introduction of the structure-property relationship and application in OFETs about most of pyrene-based semiconducting materials since 2006, illustrating that pyrene is a good building block to construct semiconductors with superior transport property for OFETs. Finally, we provide a summary concerning the methodology to improve the transport property of the pyrene-based semiconducting materials as well as an outlook.     

Low-bandgap conjugated polymers based on benzodipyrrolidone with reliable unipolar electron mobility exceeding 1 cm~2 V~(-1) s~(-1)

The employment of an intrinsic quinoidal building block, benzodipyrrolidone(BDP), on constructing conjugated polymers(PBDP-2F and PBDP-2CN) with high electron mobility and unipolar transport characteristic in polyethylenimine ethoxylated(PEIE) modified organic field-effect transistors(OFETs) is reported. The intrinsic quinoidal characteristic and excellent coplanarity of BDP can lower the lowest unoccupied molecular orbital(LUMO) levels and improve ordered interchain packing of the resulting polymers in solid states, which are favorable for electron-injection and transport. By using PEIE as the interlayer to block the hole injection, unipolar n-type transport characteristics with high electron mobility of 0.58 and 1.01 cm~2 V~(-1) s~(-1) were achieved by the OFETs based on PBDP-2F and PBDP-2CN, respectively. More importantly, the extracted mobilities are highly reliable with the reliability factor of above 80%. To the best of our knowledge, PBDP-2CN is the very first quinoid-based conjugated polymer with reliable electron mobility exceeding 1 cm~2 V~(-1) s~(-1). This work represents a significant step in exploring intrinsic quinoidal CPs for application in n-channel OFETs and logic complementary circuits.     

Electron transport in solution-grown TIPS-pentacene single crystals: Effects of gate dielectrics and polar impurities

The n-channel behavior has been occasionally reported in the organic field-effect transistors (OFETs) that usually exhibit p-channel transport only. Reconfirmation and further examination of these unusual device performances should deepen the understanding on the electron transport in organic semiconductors. 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene), a widely examined p-channel material as Au is used for source-drain electrodes, has recently been reported to exhibit electron transport when grown from non-polar solvent on divinyltetramethyldisiloxanebis (benzocyclobutene) (BCB) dielectric, spurring the study on this unusual electron transport. This paper describes FET characteristics of solution-grown TIPS-pentacene single crystals on five polymer gate dielectrics including polystyrene (PS), poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP), poly(vinyl alcohol) (PVA) and poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)). In addition to the p-channel behavior, electron transport occurs in the crystals on PMMA, PS, thick PVA (40 nm) and a bilayer dielectric of PMMA on P(VDF-TrFE-CFE), while does not on PVP and thin PVA (2 nm). The two distinct FET characteristics are consistent with the previous reported trap effect of hydroxyl groups (in PVP and PVA) and reduced injection barrier by Na⁺ ions (as impurity in PVA). The highest electron mobility of 0.48 cm² V^-1 s^-1 has been achieved in the crystals on PMMA. Furthermore, the electron transport is greatly attenuated after the crystals are exposed to the vapor of a variety of polar solvents and the attenuated electron transport partially recovers if the crystals are heated, indicating the adverse effect of polar impurities on electron transport. By reconfirming the n-channel behavior in the OFETs based on TIPS-pentacene, this work has implications for the design of n-channel and ambipolar OFETs.     

Bithiophene-imide-based polymeric semiconductors for field-effect transistors: synthesis, structure-property correlations, charge carrier polarity, and device stability

Developing new high-mobility polymeric semiconductors with good processability and excellent device environmental stability is essential for organic electronics. We report the synthesis, characterization, manipulation of charge carrier polarity, and device air stability of a new series of bithiophene-imide (BTI)-based polymers for organic field-effect transistors (OFETs). By increasing the conjugation length of the donor comonomer unit from monothiophene (P1) to bithiophene (P2) to tetrathiophene (P3), the electron transport capacity decreases while the hole transport capacity increases. Compared to the BTI homopolymer P(BTimR) having an electron mobility of 10(-2) cm(2) V(-1) s(-1), copolymer P1 is ambipolar with balanced hole and electron mobilities of ～10(-4) cm(2) V(-1) s(-1), while P2 and P3 exhibit hole mobilities of ～10(-3) and ～10(-2) cm(2) V(-1) s(-1), respectively. The influence of P(BTimR) homopolymer M(n) on film morphology and device performance was also investigated. The high M(n) batch P(BTimR)-H affords more crystalline film microstructures; hence, 3× increased electron mobility (0.038 cm(2) V(-1) s(-1)) over the low M(n) one P(BTimR)-L (0.011 cm(2) V(-1) s(-1)). In a top-gate/bottom-contact OFET architecture, P(BTimR)-H achieves a high electron mobility of 0.14 cm(2) V(-1) s(-1), only slightly lower than that of state-of-the-art n-type polymer semiconductors. However, the high-lying P(BTimR)-H LUMO results in minimal electron transport on exposure to ambient. Copolymer P3 exhibits a hole mobility approaching 0.1 cm(2) V(-1) s(-1) in top-gate OFETs, comparable to or slightly lower than current state-of-the-art p-type polymer semiconductors (0.1-0.6 cm(2) V(-1) s(-1)). Although BTI building block incorporation does not enable air-stable n-type OFET performance for P(BTimR) or P1, it significantly increases the OFET air stability for p-type P2 and P3. Bottom-gate/top-contact and top-gate/bottom-contact P2 and P3 OFETs exhibit excellent stability in the ambient. Thus, P2 and P3 OFET hole mobilities are almost unchanged after 200 days under ambient, which is attributed to their low-lying HOMOs (>0.2 eV lower than that of P3HT), induced by the strong BTI electron-withdrawing capacity. Complementary inverters were fabricated by inkjet patterning of P(BTimR)-H (n-type) and P3b (p-type).     

新型共轭聚合物的设计合成及其在场效应晶体管的应用

近年来,有机场效应晶体管(OFETs)由于在柔性器件和可穿戴电子学中的潜在应用受到了学术界和工业界的普遍关注,尤其是以聚合物半导体材料构筑的晶体管性能得到了快速的发展.如何设计合成用于OFETs的高性能聚合物半导体材料,一直是我们的追求目标.然而,分子结构对迁移率的影响仍缺少系统的比较.本文综述了近年来国内外新型聚合物材料的最新进展.我们按照材料的种类以及载流子的传输类型进行了分类,对高性能聚合物材料的发展过程、材料的设计思路以及相应的FETs性能进行了系统地归纳总结.通过研究分子及分子聚集态结构与器件性能之间的关系,希望为以后设计合成新型的高性能的聚合物材料提供有益的借鉴和指导.     

Electron-transporting oligothiophenes containing dicyanomethylene-substituted cyclopenta[b]thiophene: chemical tuning for air stability in OFETs

We have synthesized new electron-transporting oligothiophenes containing dicyanomethylene-substituted cyclopenta[b]thiophene as an active material for the fabrication of solution-processable n-type organic field-effect transistors (OFETs). The influence of the number of dicyanomethylene groups as well as the position of hexyl groups was investigated in detail by performing photophysical and electrochemical measurements. Results revealed that the optical energy gaps and the lowest unoccupied molecular orbital (LUMO) energy levels can be controlled by changing the number of dicyanomethylene groups. In contrast, the position of hexyl groups has little influence on molecular electronic properties. X-ray diffraction and atomic force microscopy measurements revealed that spin-coated thin films of the new compounds had a crystalline structure. OFETs based on these compounds were evaluated in vacuum and air-exposed conditions, and the electron mobility of up to 0.016 cm(2) V(-1) s(-1) was achieved. Furthermore, we demonstrated that the air stability of the OFETs depends on the LUMO energy level of the compounds.     

Well-Balanced Ambipolar Charge Transport of Diketopyrrolepyrrole-Based Copolymers: Organic Field-Effect Transistors and High-Voltage Logic Applications

A poly (3,6-bis(thiophen-2-yl)−2,5-bis(2-decyltetradecyl)−2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione-co-(2,3-bis(phenyl)acrylonitrile)) (PDPADPP) copolymer, composed of diketopyrrolopyrrole (DPP) and a cyano (nitrile) group with a vinylene spacer linking two benzene rings, is synthesized via a palladium-catalyzed Suzuki coupling reaction. The electrical performance of PDPADPP in organic field-effect transistors (OFETs) and circuits is investigated. The OFETs based on PDPADPP exhibit typical ambipolar transport characteristics, with the as-cast OFETs demonstrating low field-effect hole and electron mobility values of 0.016 and 0.004 cm² V⁻¹ s⁻¹, respectively. However, after thermal annealing at 240 °C, the OFETs exhibit improved transport characteristics with highly balanced ambipolar transport, showing average hole and electron mobility values of 0.065 and 0.116 cm² V⁻¹ s⁻¹, respectively. To verify the application of the PDPADPP OFETs in high-voltage logic circuits, compact modeling using the industry-standard small-signal Berkeley short-channel IGFET model (BSIM) is performed, and the logic application characteristics are evaluated. The circuit simulation results demonstrate excellent logic application performance of the PDPADPP-based ambipolar transistor and illustrate that the device annealed at 240 °C exhibits ideal circuit characteristics.     

Monolayer organic field-effect transistors

Monolayer organic field-effect transistors(OFETs) are attracting worldwide interest in device physics and novel applications due to their ultrathin active layer for two-dimensional charge transport. The monolayer films are generally prepared by thermal evaporation, the Langmuir technique or self-assembly process, etc., but their electrical performance is relatively lower than corresponding thick films. From 2011, the performance of monolayer OFETs has been boosted by using the monolayer molecular crystals(MMCs) as active channels, which opened up a new era for monolayer OFETs. In this review, recent progress of monolayer OFETs, including the preparation of monolayer films, their OFET performance and applications are summarized.Finally, perspectives of monolayer OFETs in the near future are also discussed.     

Enhanced mobility and environmental stability in all organic field‐effect transistors: The role of high dipole moment solvent

Low‐operating voltage, high mobility, and stable organic field‐effect transistors (OFETs) using polymeric dielectrics such as pristine poly(4‐vinyl phenol) (PVP) and poly(methyl methacrylate) (PMMA), dissolved in solvents of high dipole moment, have been achieved. High dipole moment solvents such as propylene carbonate and dimethyl sulfoxide used for dissolving the polymer dielectric enhance the charge carrier mobilities by three orders of magnitude in pentacene OFETs compared with low dipole moment solvents. Fast switching circuits with patterned gate PVP‐based pentacene OFETs demonstrated a switching frequency of 75 kHz at input voltages of |5 V|. The frequency response of the OFETs is attributed to a high degree of dipolar‐order in dielectric films obtained from high‐polarity solvents and the resulting energetically ordered landscape for transport. Remarkably, these pentacene‐based OFETs exhibited high stability under bias stress and in air with negligible shifts in the threshold voltage. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2013 , 51, 1533–1542     

Enhanced Charge Transfer,Transport and Photovoltaic Efficiency in All‐Polymer Organic Solar Cells by Polymer Backbone Fluorination

We successfully designed and synthesized two BDT‐BT‐T (BDT=benzo[1,2‐b:4,5‐b']dithiophene, BT‐T=4,7‐dithien‐2‐yl‐2,1,3‐benzothiadiazole) based polymers as the electron donor for application in all‐polymer solar cells (all‐PSCs). By adopting N2200 as the electron acceptor, we systematically investigated the impact of fluorination on the charge transfer, transport, blend morphology and photovoltaic properties of the relevant all‐PSCs. A best power conversion efficiency (PCE) of 3.4% was obtained for fluorinated PT‐BT2F/N2200 (BT2F=difluorobenzo[c][1,2,5]thiadiazole) all‐PSCs in comparison with that of 2.7% in non‐fluorinated PT‐BT/N2200 (BT=benzothiadiazole) based device. Herein, all‐polymers blends adopting either non‐fluorinated PT‐BT or fluorinated PT‐BT2F exhibit similar morphology features. In depth optical spectrum measurements demonstrate that molecular fluorination can further enhance charge transfer between donor and acceptor polymer. Moreover, all‐polymer blends exhibit improved hole mobilities and more balanced carriers transport when adopting fluorinated donor polymer PT‐BT2F. Therefore, although the PCE is relatively low, our findings may become important in understanding how subtle changes in molecular structure impact relevant optoelectronic properties and further improve the performance of all‐PSCSs.     

Air-stable n-type organic field-effect transistors based on solution-processable, electronegative oligomers containing dicyanomethylene-substituted cyclopenta[b]thiophene

Solution-processable, electronegative, π-conjugated systems containing dicyanomethylene-substituted cyclopenta[b]thiophene were synthesized as potential active materials for air-stable n-type organic field-effect transistors (OFETs). Electrochemical measurements revealed that these compounds exhibited electrochemical stability and that the lowest unoccupied molecular orbital (LUMO) had an energy level less than -4.0 eV. Flash-photolysis time-resolved microwave conductivity (FP-TRMC) measurements were performed, and the value of intradomain electron mobility was determined to be as high as 0.1 cm(2) V(-1) s(-1) . The OFETs were fabricated by spin-coating thin films of the compounds as an active layer. The electron mobility of the OFETs was 3.5×10(-3) cm(2) V(-1) s(-1) in vacuum. Furthermore, electron mobility of the same order of magnitude and stable characteristics were obtained under air-exposed conditions. X-ray diffraction measurements of the spin-coated thin films revealed the difference of molecular arrangements depending on the inner conjugated units. Atomic force microscopy measurements of crystalline-structured films exhibited the formation of grains. The accomplishment of air-stability was attributed to the combined effect of the low-lying LUMO energy level and the molecular arrangements in the solid state, avoiding both the quenching of electron carriers and the intrusion of oxygen and/or moisture.     

十字交叉型π共轭分子3,6-二苯-1,2,4,5-(2′,2″-二苯基)-苯并二噁唑的电子结构和电荷传输性质的理论研究

采用密度泛函理论的B3LYP方法, 在6-31G(d)基组水平下研究了以三联苯和二苯基苯并噁唑构成的十字交叉型共轭分子3,6-二苯基-1,2,4,5-(2′,2″-二苯基)-苯并二噁唑的电子结构和电荷传输性质. 通过对分子的重组能和晶体中分子间电荷传输积分的计算得到该分子的空穴迁移率为0.31 cm²·V^-1·s^-1, 电子迁移率为0.11 cm²/(V·s). 计算结果表明, 空穴的传输主要是通过三联苯方向上两端苯环的“边对面”的相互作用以及分子中心π体系的错位重叠相互作用来实现的. 而电子的传输路径主要是通过苯并噁唑方向的π-π重叠相互作用来实现. 通过分析分子正负离子态的Mulliken电荷发现, 正电荷较多分布在三联苯方向上, 而负电荷较多分布在苯并噁唑方向上. 计算结果表明, 电子和空穴的传输分别在分子相互交叉的不同方向上, 有利于电子和空穴的平衡传输.     

Enhanced photovoltaic characterization and charge transport of TIO2 nanoparticles/nanotubes composite photoanode based on indigo carmine dye-sensitized solar cells

Dye-sensitized solar cells (DSSCs) have established themselves as an alternative to conventional solar cells owing to their remarkably high power conversion efficiency, longtime stability and low-cost production. DSSCs composed of a dyed oxide semiconductor photoanode, a redox electrolyte and a counter electrode. In these devices, conversion efficiency is achieved by ultra-fast injection of an electron from a photo excited dye into the conduction band of metal oxide followed by subsequent dye regeneration and holes transportation to the counter electrode. The energy conversion efficiency of DSSC is to be dependent on the morphology and structure of the dye adsorbed metal oxide photoanode. Worldwide considerable efforts of DSSCs have been invested in morphology control of photoanode film, synthesis of stable optical sensitizers and improved ionic conductivity electrolytes. In the present investigation, a new composite nano structured photoanodes were prepared using TiO₂ nano tubes (TNTs) with TiO₂ nano particles (TNPs). TNPs were synthesized by sol–gel method and TNTs were prepared through an alkali hydrothermal transformation. Working photoanodes were prepared using five pastes of TNTs concentrations of 0, 10, 50, 90, and 100 % with TNPs. The DSSCs were fabricated using Indigo carmine dye as photo sensitizer and PMII (1-propyl-3-methylimmidazolium iodide) ionic liquid as electrolyte. The counter electrode was prepared using Copper sulfide. The structure and morphology of TNPs and TNTs were characterized by X-ray diffraction and electron microscopes (TEM and SEM). The photocurrent efficiency is measured using a solar simulator (100 mW/cm²). The prepared composite TNTs/TNPs photoanode could significantly improve the efficiency of dye-sensitized solar cells owing to its synergic effects, i.e. effective dye adsorption mainly originated from TiO₂ nanoparticles and rapid electron transport in one-dimensional TiO₂ nanotubes. The results of the present investigation suggested that the DSSC based on 10 % TNTs/TNPs showed better photovoltaic performance than cell made pure TiO₂ nanoparticles. The highest energy-conversion efficiency of 2.80 % is achieved by composite TNTs (10 %)/TNPs film, which is 68 % higher than that pure TNPs film and far larger than that formed by bare TNTs film (94 %). The charge transport and charge recombination behaviors of DSSCs were investigated by electrochemical impedance spectra and the results showed that composite TNTs/TNPs film-based cell possessed the lowest transfer resistances and the longest electron lifetime. Hence, it could be concluded that the composite TNTs/TNPs photoanodes facilitate the charge transport and enhancing the efficiencies of DSSCs.     

Electronic structure and microscopic charge‐transport properties of a new‐type diketopyrrolopyrrole‐based material

Recently, diketopyrrolopyrrole (DPP)‐based materials have attracted much interest due to their promising performance as a subunit in organic field effect transistors. Using density functional theory and charge‐transport models, we investigated the electronic structure and microscopic charge transport properties of the cyanated bithiophene‐functionalized DPP molecule (compound 1 ). First, we analyzed in detail the partition of the total relaxation (polaron) energy into the contributions from each vibrational mode and the influence of bond‐parameter variations on the local electron–vibration coupling of compound 1 , which well explains the effects of different functional groups on internal reorganization energy (λ). Then, we investigated the structural and electronic properties of compound 1 in its isolated molecular state and in the solid state form, and further simulated the angular resolution anisotropic mobility for both electron‐ and hole‐transport using two different simulation methods: (i) the mobility orientation function proposed in our previous studies (method 1); and (ii) the master equation approach (method 2). The calculated electron‐transfer mobility (0.00003–0.784 cm² V^?1 s^?1 from method 1 and 0.02–2.26 cm² V^?1 s^?1 from method 2) matched reasonably with the experimentally reported value (0.07–0.55 cm² V^?1 s^?1). To the best of our knowledge, this is the first time that the transport parameters of compound 1 were calculated in the context of band model and hopping models, and both calculation results suggest that the intrinsic hole mobility is higher than the corresponding intrinsic electron mobility. Our calculation results here will be instructive to further explore the potential of other higher DPP‐containing quinoidal small molecules. © 2015 Wiley Periodicals, Inc.     

A series of fluorenone-carbazole based regioisomers as bipolar host materials for efficient organic light emitting diodes

A series of fluorenone-carbazole based regioisomers (1–4) have been synthesized and applied as host materials for red OLEDs to investigate the effect of different connection configuration on the optoelectronic properties, charge transport capability and device performance. The optoelectronic properties, thermal stability, redox behaviors and charge transport characteristics of these four compounds were fully characterized. These four hosts demonstrated high thermal stability, bipolar charge transport properties and good EL performance. Although these four compounds demonstrated similar HOMO and LUMO energy levels, the twisted structure of 1 led to the smallest singlet-triplet energy gap, which could account in part for the observation of its better EL performance.     

Charge transport and electronic properties of N-heteroquinones: quadruple weak hydrogen bonds and strong π–π stacking interactions

The charge transport and photophysical properties of N-heteroquinones, which can function as n-type organic semiconductors in organic field-effect transistors (OFETs) with high electron mobility, were systematically investigated using hopping model, band theory, and time-dependent density functional theory (TDDFT). The calculated absorption spectra and electron mobility are in good agreement with experimental results. To the studied compounds, subtle structural modifications can greatly reduce the reorganization energy. There are two main kinds of intermolecular interaction forces of the studied compounds in the crystal, which result from intermolecular π–π and hydrogen bonds interactions, respectively. The results of hopping model show that the electron transport properties are mainly determined by pathways containing intermolecular π–π interactions, and hole transport properties are mainly determined by pathways containing intermolecular hydrogen bonds from the standpoint of transfer integral. Moreover, electronic transfer integral value increases with the enhancement of intermolecular overlap corresponding to the overlap extent of π–π packing. Hole transfer integral value decreases with decreasing the number of hydrogen bonds. This means that charge transport properties can be efficiently tuned by controlling the relative positions of the molecules and the number of hydrogen bonds. The analysis of band structure also supports the conclusion of hopping model.     

Carbazolebis(thiadiazole)-core based non-fused ring electron acceptors for efficient organic solar cells

Non-fused ring electron acceptors (NFREAs) have a broad application prospect in the commercialization of organic solar cells (OSCs) due to the advantages of simple synthesis and low cost. The selection of intermediate block cores of non-fused frameworks and the establishment of the relationship between molecular structure and device performance are crucial for the realization of high-performance OSCs. Herein, two A-D-A’-D-A type NFREAs namely CBTBO-4F and CBTBO-4Cl, constructed with a novel electron-deficient block unit N-(2-butyloctyl)-carbazole[3,4-c:5,6-c]bis[1,2,5]thiadiazole (CBT) and bridging unit 4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b:3,4-b']dithiophene (DTC) coupling with different terminals (IC-2F/2Cl), were designed and synthesized. The two NFREAs feature broad and strong photoresponse from 500 nm to 900 nm due to the strong intramolecular charge transfer characteristics. Compared with CBTBO-4F, CBTBO-4Cl shows better molecular planarity, stronger crystallinity, more ordered molecular stacking, larger van der Waals surface, lower energy level and better active layer morphology, contributing to much better charge separation and transport behaviors in its based devices. As a result, the CBTBO-4Cl based device obtains a higher power conversion efficiency of 10.18% with an open-circuit voltage of 0.80 V and a short-circuit current density of 21.20 mA/cm². These results not only demonstrate the great potential of CBT, a new building block of the benzothiazole family, in the construction of high-performance organic conjugated semiconductors, but also suggest that the terminal chlorination is an effective strategy to improve device performance.     

Synthesis,characterization, and organic field‐effect transistors study of conjugated D–A copolymers based on dialkylated naphtho[1,2‐b:5,6‐b′]dithiophene/naphtho[1,2‐b:5,6‐b′]difuran and benzodiathiazole/benzoxadiazole

In this report, four donor–acceptor copolymers, P(NDT3‐BT), P(NDT3‐BO), P(NDF3‐BT), and P(NDF3‐BO), using 5,10‐didodecyl‐naphtho[1,2‐b:5,6‐b′]dithiophene (NDT3) or 5,10‐didodecyl‐naphtho[1,2‐b:5,6‐b′]difuran (NDF3) as an electron‐rich unit and benzodiathiazole (BT) or benzoxadiazole (BO) as an electron‐deficient one, were designed, synthesized, and characterized. Detailed systematical investigation was developed for studying the effect of the S/O atoms on the optical, electrochemical, and morphological properties of the polymers, as well as the subsequent performance of the organic field‐effect transistors (OFETs) fabricated from these copolymers. It was found that, compared with NDF3‐based P(NDF3‐BT)/P(NDF3‐BO), by replacing NDF3 with stronger aromatic NDT3, the resultant P(NDT3‐BT)/P(NDT3‐BO) show smaller lamellar distance with an increased surface roughness in solid state, and relatively higher hole mobilities are obtained. The hole mobilities of the four polymers based on OFETs varied from 0.20 to 0.32 cm² V^?1 s^?1 depending on their molecular structures, giving some valuable insights for the further design and development of a new generation of semiconducting materials. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2014 , 52, 2465–2476     

基于氟代异靛蓝并[7,6-g]异靛蓝的共轭聚合物的合成及其半导体性质

采用Stille缩聚,合成了3个异靛蓝并[7,6-g]异靛蓝(DIID)和乙烯单元交替排列的共轭聚合物P0F、P2F和P4F,三者在DIID单元中分别含0、2和4个氟原子(F).3个聚合物均具有良好的平面性,前线分子轨道几乎在整个共轭骨架上离域.它们均具有宽的吸收光谱,吸收范围在400~1000 nm,光学带隙约为1.25 eV;随着氟原子数目的增加,聚合物的最高占有分子轨道(HOMO)和最低空分子轨道(LUMO)能级依次下降0.1~0.2 eV.以这3个聚合物作为活性层,制备了顶栅-底接触型有机场效应晶体管器件,随着氟原子数目的增加,聚合物的传输性质由双极传输变为n型传输.P0F和P2F是双极传输型聚合物,空穴迁移率(μ_h)分别达到0.11和0.30 cm~2 V~(-1) s~(-1),电子迁移率(me)分别达到0.22和1.19 cm~2 V~(-1) s~(-1).P4F是n型聚合物,me达到0.18 cm~2 V~(-1) s~(-1).     

Rational Design of Ambipolar Organic Semiconductors: Is Core Planarity Central to Ambipolarity in Thiophene–Naphthalene Semiconductors?

Herein, we report a new family of naphthaleneamidinemonoimide-fused oligothiophene semiconductors designed for facile charge transport in organic field-effect transistors (OFETs). These molecules have planar skeletons that induce high degrees of crystallinity and hence good charge-transport properties. By modulating the length of the oligothiophene fragment, the majority carrier charge transport can be switched from n-type to ambipolar behavior. The highest FET performance is achieved for solution-processed films of 10-[(2,2'-bithiophen)-5-yl]-2-octylbenzo[lmn]thieno[3',4':4,5]imidazo[2,1-b][3,8]phenanthroline-1,3,6(2H)-trione (NDI-3 Tp), with optimized film mobilities of 2×10(-2) and 0.7×10(-2) cm(2) V(-1) s(-1) for electrons and holes, respectively. Finally, these planar semiconductors are compared with their twisted-skeleton counterparts, which exhibit only n-type mobility, in order to understand the origin of the ambipolarity in this new series of molecular semiconductors.