Performance enhancement of an InGaN light-emitting diode with an AIGaN/InGaN superlattice electron-blocking layer

The efficiency enhancement of an InGaN light-emitting diode （LED） with an A1GaN/InGaN superlattice （SL） electron-blocking layer （EBL） is studied numerically, which involves the light-current performance curve, internal quan- tum efficiency electrostatic field band wavefunction, energy band diagram carrier concentration, electron current density, and radiative recombination rate. The simulation results indicate that the LED with an A1GaN/InGaN SL EBL has better optical performance than the LED with a conventional rectangular A1GaN EBL or a normal A1GaN/GaN SL EBL because of the appropriately modified energy band diagram, which is favorable ibr the injection of holes and confinement of elec- trons. Additionally, the efficiency droop of the LED with an AIGaN/InGaN SL EBL is markedly improved by reducing the polarization field in the active region.     

A GaN-AIGaN-InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

The advantages of a GaN-AlGaN-InGaN last quantum barrier （LQB） in an InGaN-based blue light-emitting diode are analyzed via numerical simulation. We found an improved light output power, lower current leakage, higher recombi- nation rate, and less efficiency droop compared with conventional GaN LQBs. These improvements in the electrical and optical characteristics are attributed mainly to the specially designed GaN-AlGaN-InGaN LQB, which enhances electron confinement and improves hole injection efficiency.     

Efficiency enhancement of an InGaN light-emitting diode with a p-AIGaN/GaN superlattice last quantum barrier

In this study, the efficiency droop of an InGaN light-emitting diode （LED） is reduced slgnlncanUy oy using a p-AlGaN/GaN superlattice last quantum barrier. The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency, which is revealed by investigating the light currents, internal quantum efficiencies, energy band diagrams, carrier concentrations, carrier current densities, and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device （APSYS）.     

Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer

The effects of V/Ill growth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated. The surface morphology, crystalline quality, strain states, and density of basal stacking faults were found to depend heavily upon the V/III ratio. With decreasing V/III ratio, the surface morphology and crystal quality first improved and then deteriorated, and the density of the basal-plane stacking faults also first decreased and then increased. The optimal V/III ratio growth condition for the best surface morphology and crystalline quality and the smallest basal-plane stacking fault density of a-GaN films are found. We also found that the formation of basal-plane stacking faults is an effective way to release strain.     

The influence of A1GaN/GaN superlattices as electron blocking layers on the performance of blue InGaN light-emitting diodes

P-A1GaN/P-GaN superlattices are investigated in blue InGaN light-emitting diodes as electron blocking layers. The simulation results show that efficiency droop is markedly improved due to two reasons： （i） enhanced hole concentration and hole carrier transport efficiency in A1GaN/GaN superlattices, and （ii） enhanced blocking of electron overflow between multiple quantum-wells and A1CaN/GaN superlattices.     

Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AIGaN hole blocking layer

Blue InGaN light-emitting diodes （LEDs） with a conventional electron blocking layer （EBL）, a common n-A1GaN hole blocking layer （HBL）, and an n-A1GaN HBL with gradual A1 composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency （IQE）. The results indicate that LEDs with an n-AIGaN HBL with gradual AI composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conven tional p-A1GaN EBL or a common n-A1GaN HBL. Meanwhile, the efficiency droop is alleviated when an n-A1GaN HBL with gradual A1 composition is used.     

Parameters-dependent nonlinear absorptions in InGaN/GaN MQW and GaN film

The optical nonlinearities of an InGaN/GaN multiple quantum well (MQW) and a GaN film were experimentally investigated by using femtosecond Z-scan method in this paper. It was observed that the InGaN/GaN MQW displays a nonlinear saturable absorption (SA) effect and the nonlinear absorption coefficient β was determined to be ; and the GaN film shows a reverse saturable absorption (RSA) effect and the β is . It is also found that the absorption cross sections and quantum confinement effect (QCE) give an influence on the SA of the InGaN/GaN MQW structure.     

An approach to evaluate the efficiency of y-ray detectors to determine the radioactivity in environmental samples

This work provides an approach to determine the efficiency of T-ray detectors with a good accuracy in order to determine the concentrations of either naturally occurring or artificially prepared radionuclides. This approach is based on the efficiency transfer formula （ET）, the effective solid angles, the self- absorptions of the source matrix, the attenuation by the source container and the detector housing materials on the detector efficiency. The experimental calibration process was done using radioactive （Cylindrical ＆ Marinelli） sources, in different dimensions, that contain aqueous 152Eu radionuclide. The comparison point to a fine agreement between the experimental measured and calculated efficiencies for the （NaI ＆ HPGe） detectors using volumetric radioactive sources.     

Optimum condition of efficiency functions for HPGe γ-ray detectors in the 121-1408 keV energy range

The optimum condition of three commonly used functions in the Genie 2000 γ spectra analysis software have been studied in the 121-1408 keV energy range. The three functions are applied for fitting the full-energy peak efficiency of the HPGe gamma-ray detector. A detailed procedure to obtain the optimum condition is described. The HPGe detector is calibrated at 11 cm by three radioactive sources of point form （^152Eu, ^137Cs, ^60Co） providing 11 energy peaks. After data processing, results shows that the three functions used in the Genie 2000 gamma spectra analysis software fit best at orders 3-5. Lastly the standard radioactive source 133Ba is chosen to validate the results. Differences between the standard activity of 133Ba and the result obtained from the fitting functions are below 1.5%. Therefore the optimum orders of the three functions used in the Genie 2000 3, spectra analysis software are 3-5 with the 11 energy peaks.     

Homogeneous interface-type resistance switching in Au/La0.67Ca0.33MnO3/SrTiO3/F:SnO2 heterojunction memories

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunetions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 x 10^4% by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.     

Calibration of RPC-based muon detector at BESⅢ

The calibration algorithm for RPC-based muon detector at BESIII has been developed. The calibration method, calibration error and algorithm performance are studied. The primary results of efficiency and noise at layer, module and strip levels have been calibrated with cosmic ray data. The calibration constants are available for simulation and reconstruction tuning. The results of Monte Carlo and data are also compared to check the validation and reliability of the algorithm.     

Measurement of the response function and the detection effciency of an organic liquid scintillator for neutrons between 1 and 30 MeV

The light output function of a φ50.8 mm×50.8 mm BC501A scintillation detector was measured in the neutron energy region of 1 to 30 MeV by fitting the pulse height （PH） spectra for neutrons with the simulations from the NRESP code at the edge range. Using the new light output function, the neutron detection effciency was determined with two Monte-Carlo codes, NEFF and SCINFUL. The calculated effciency was corrected by comparing the simulated PH spectra with the measured ones. The determined effciency was verified at the near threshold region and normalized with a Proton-Recoil-Telescope （PRT） at the 8-14 MeV energy region.     

MoO3/Ag/AI/ZnO intermediate layer for inverted tandem polymer solar cells

We report an MoO3/Ag/Al/ZnO intermediate layer connecting two identical bulk heterojunction subcells with a poly（3-hexylthiophene） and [6,6]-phenyl-C61-butyric acid methyl ester （P3HT and PCBM） active layer for inverted tan- dem polymer solar cells. The highly transparent intermediate layer with an optimized thickness realizes an Ohmic contact between the two subcells for effective charge extraction and recombination. A maximum power conversion efficiency of 3.76% is obtained for the tandem cell under 100 mW/cm2 illumination, which is larger than that of a single cell （3.15%）. The open-circuit voltage of the tandem cell （1.18 V） approaches double that of the single cell （0.61 V）.     

Josephson Effect in FS/I/N/I/FS Tunnel Junctions

The Bogoliubov de Gennes equation is applied to the study of coherence effects in the ferromagnetic superconductor/insulator/normal metal/insulator/ferromagnetic/superconductor （FS/I/N/I/FS） junction. We calculated the Josephson current in FS/I/N/I/FS as a function of exchange field in ferromagnetic superconductor, temperature, and normal metal thickness. It is found that the Josephson critical current in FS/I/N/I/FS exhibits oscillations as a function of the length of normal metal. The exchange field always suppresses the Josephson critical current Ip for a parallel configuration of the magnetic moments of two ferromagnetic superconductor （FS） electrodes. In the antiparallel configuration, the Josephson critical current IAv at the minimum values of oscillation increases with the exchange field for strong barrier strength and at low temperatures.     

Structural and magnetic properties of Co1-xZnxFe2O4 nanoparticles

Co1-xZnxFe2O4 nanoparticles, prepared by the polyvinyl alcohol sol-gel method, have been investigated by x-ray diffraction and MSssbauer spectroscopy. These results are compared with those for the bulk material. The lattice parameters of CoZn ferrite nanoparticles are larger than those of the bulk material. Thermal scanning of MSssbauer measurement shows that the transition temperatures for nanoparticles are higher than those of the bulk material except for the sample CoFe2O4.     

Mechanism of Bragg Diffraction-Assisted Light Extraction in GaN-based Light-Emitting Diodes Based on a Self-Consistent Model

By introducing the distribution of the light energy density in GaN-based light-emitting diode （LED）, the LED model based on the incoherent regime and the light extraction efficiency are investigated. The energy density as a function of the angle of incidence is calculated to demonstrate the mechanism of the light extraction. The deviation between the tendencies of the transmissivity of the output layer and the extraction efficiency is also demonstrated.     

Design of a high-efficiency C-band backward wave oscillator

For practicability of the high power microwave source,a C-band backward wave oscillator（BWO） which has high conversion efficiency is designed.When the axial guiding magnetic field is 0.83 T,the electron energy and the beam current of the diode are respectively 80 keV and 2.1 kA,a microwave output power of 100 MW at 7.4 GHz microwave frequency with 65% conversion efficiency is achieved in simulation.     

Theoretical study on K, L, and M X-ray transition energies and rates of neptunium and its ions

The transition energies and electric dipole （El） transition rates of the K, L, and M lines in neutral Np have been theoretically determined from the MultiConfiguration Dirac-Fock （MCDF） method. In the calculations, the contributions from Breit interaction and quantum electrodynamics （QED） effects （vacuum polarization and self-energy）, as well as nu- clear finite mass and volume effects, are taken into account. The calculated transition energies and rates are found to be in good agreement with other experimental and theoretical results. The accuracy of the results is estimated and discussed. Furthermore, we calculated the transition energies of the same lines radiating from the decaying transitions of the K-, L-, and M-shell hole states of Np ions with the charge states Np1＋ to Np6＋ for the first time. We found that for a specific line, the corresponding transition energies relating to all the Np ions are almost the same; it means the outermost electrons have a very small influence on the inner-shell transition processes.     

Realization of quantum Fourier transform over ZN

Since the difficulty in preparing the equal superposition state of amplitude is 1/√N, we construct a quantile transform of quantum Fourier transform （QFT） over ZN based on the elementary transforms, such as Hadamard transform and Pauli transform. The QFT over Z_N can then be realized by the quantile transform, and used to further design its quantum circuit and analyze the requirements for the quantum register and quantum gates. However, the transform needs considerable quantum computational resources and it is difficult to construct a high-dimensional quantum register. Hence, we investigate the design of t-bit quantile transform, and introduce the definition of t-bit semiclassical QFT over Z_N. According to probability amplitude, we prove that the transform can be used to realize QFT over ZN and further design its quantum circuit. For this transform, the requirements for the quantum register, the one-qubit gate, and two-qubit gate reduce obviously when compared with those for the QFT over Z_N.     

Precipitation efficiency and its relationship to physical factors

The precipitation efficiency and its relationship to physical factors are examined by analyzing a two-dimensional cloud-resolving model simulation during TOGA COARE in this study. The basic physical factors include convective avail- able potential energy, water-vapor convergence, vertical wind shear, cloud ratio, sea surface temperature, air temperature, and precipitable water. Precipitation efficiencies do not show a close relationship to air temperature nor to sea surface tem- perature nor to precipitable water. The precipitation efficiency increases as the water-vapor convergence rate increases and vertical wind shear weakens, whereas it decreases as the convective available potential energy dissipates and anvil clouds develop.